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1.
Diwaker 《Molecular physics》2013,111(18):2257-2267
We have proposed a general method for finding an exact analytical solution for the multi-channel scattering problem in the presence of a delta function coupling. Our solution is quite general and is valid for any set of potentials, if the uncoupled diabatic potential has an exact solution. We have also discussed a few examples, where our method can easily be applied.  相似文献   

2.
We have proposed a general method for finding the exact analytical solution for the multi-channel curve crossing problem in the presence of delta function couplings. We have analysed the case where a potential energy curve couples to a continuum (in energy) of the potential energy curves.  相似文献   

3.
We derive the analytical form of the Green's function of 2-dimensional electrons with lateral confinement in a perpendicular magnetic field. The confinement potentials considered are infinite barriers at radius R (quantum dot) and at r and R (quantum ring).  相似文献   

4.
利用全量子理论研究了高斯型耦合Tavis-Cummings模型中一个原子的熵压缩,运用数值计算方法讨论了原子垂直于腔轴的运动速度、光场强度以及两原子的初态对单个原子熵压缩的影响. 结果表明,原子的熵压缩时间由原子的运动速度决定,压缩程度由光场强度决定,压缩时间和压缩程度还决定于原子的初始状态.  相似文献   

5.
利用全量子理论研究了高斯型耦合Tavis-Cummings模型中一个原子的熵压缩,运用数值计算方法讨论了原子垂直于腔轴的运动速度、光场强度以及两原子的初态对单个原子熵压缩的影响.结果表明,原子的熵压缩时间由原子的运动速度决定,压缩程度由光场强度决定,压缩时间和压缩程度还决定于原子的初始状态.  相似文献   

6.
白继元  贺泽龙  李立  韩桂华  张彬林  姜平晖  樊玉环 《物理学报》2015,64(20):207304-207304
设计一个两端线型双量子点分子Aharonov-Bohm (A-B)干涉仪. 采用非平衡格林函数技术, 理论研究无含时外场作用下的体系电导和引入含时外场作用下的体系平均电流. 在不考虑含时外场时, 调节点间耦合强度或磁通可以诱导电导共振峰劈裂. 控制穿过A-B干涉仪磁通的有无, 实现了共振峰电导数值在0与1之间的数字转换, 为制造量子开关提供了一个新的物理方案. 同时借助磁通和Rashba自旋轨道相互作用, 获得了自旋过滤. 当体系引入含时外场时, 平均电流曲线展示了旁带效应. 改变含时外场的振幅, 实现了体系平均电流的大小与位置的有效控制, 而调节含时外场的频率, 则可以实现平均电流峰与谷之间的可逆转换. 通过调节磁通与Rashba自旋轨道相互作用, 与自旋相关的平均电流亦得到有效控制. 研究结果为开发利用耦合多量子点链嵌入A-B 干涉仪体系电输运性质提供了新的认知. 上述结果可望对未来的量子器件设计与量子计算发挥重要的指导作用.  相似文献   

7.
We have investigated the current for the system of vibrating quantum dot irradiated with a rotating magnetic field and an oscillating magnetic field by nonequilibrium Green's function. The rotating magnetic field rotates with the angular frequency ωr around the z-axis with the tilt angle ?, and the time-oscillating magnetic field is located in the z-axis with the angular frequency ω. Different behaviors have been shown in the presence of electron-phonon interaction (EPI) which plays a significant role in the transport. The current displays asymmetric behavior as the source-drain bias eV=0, novel side peaks or shoulders can be found due to the phonon absorption and emission procedure, and the negative differential resistance becomes stronger as the parameter g increases. Furthermore, the strong EPI also destroys the quasiperiodic oscillations of current in the region μ0B1>2.5Δ. The electron transport properties are also significantly influenced by the linewidth function Γ.  相似文献   

8.
9.
We analyze the effects of on-site electronic coulomb repulsion U on the optical absorption and density of states of a graphene like structure with two different sublattice on-site energies in the context of Hubbard model. Mean field approximation has been implemented in order to find excitation spectrum of electronic system. Antiferromagnetic long range ordering has been considered as the ground state of model Hamiltonian. We find that the band gap in both optical conductivity and density of states decreases with strength of coulombic interaction. The absorption spectra of the graphene like structure as a nanoscale system exhibit the prominent peaks, mainly owing to the divergent density of states and excitonic effects.  相似文献   

10.
陈晓彬  段文晖 《物理学报》2015,64(18):186302-186302
低维材料不断涌现的新奇性质吸引着科学研究者的目光. 除了电子的量子输运行为之外, 人们也陆续发现和确认了热输运中显著的量子行为, 如 热导低温量子化、声子子带、尺寸效应、瓶颈效应等. 这些小尺度体系的热输运性质可以很好地用非平衡格林函数来描述. 本文首先介绍了量子热输运的特性、声子非平衡格林函数方法及其在低维纳米材料中的研究进展; 其次回顾了近年来在 一系列低维材料中发现的热-自旋输运现象. 这些自旋热学现象展现了全新的热电转换机制, 有助于设计新型的热电转换器件, 同时也给出了用热产生自旋流的新途径; 最后介绍了线性响应理论以及在此理论框架下结合声子、电子非平衡格林函数方法进行的一些有益的探索. 量子热输运的研究对热效应基础研究以及声子学器件、能量转换器件的发展有着不可替代的重要作用.  相似文献   

11.
We theoretically study the thermoelectric transport properties through a triple quantum dots (QDs) device with the central QD coupled to a ferromagnetic lead, a superconducting one, and two side QDs with spin-dependent interdot tunneling coupling. The thermoelectric coefficients are calculated in the linear response regime by means of nonequilibrium Green's function method. The thermopower is determined by the single-electron tunneling processes at the edge of superconducting gap. Near the outside of the gap edge the thermopower is enhanced while thermal conductance is suppressed, as a result, the charge figure of merit can be greatly improved as the gap appropriately increases. In the same way, charge figure of merit also can be greatly improved near the outside of the gap edge by adjusting interdot tunneling coupling and asymmetry coupling of the side QDs to central QD. Moreover, the appropriate increase of the interdot tunneling splitting and spin polarization of ferromagnetic lead not only can improve charge thermopower and charge figure of merit, but also can enhance spin thermopower and spin figure of merit. Especially, the interdot tunneling splitting scheme provides a method of controlling charge (spin) figure merit by external magnetic field.  相似文献   

12.
Thermal and electron transport through organic molecules attached to three-dimensional gold electrodes in two different configurations, namely para and meta with thiol-terminated junctions is studied theoretically in the linear response regime using Green's function formalism. We used thiol-terminated(–SH bond) benzene units and found a positive thermopower because the highest occupied molecular orbital(HOMO) is near the Fermi energy level. We investigated the influence of molecular length and molecular junction geometry on the thermoelectric properties. Our results show that the thermoelectric properties are highly sensitive to the coupling geometry and the molecular length. In addition, we observed that the interference effects and increasing molecular length can increase the thermoelectric efficiency of device in a specific configuration.  相似文献   

13.
The current response for the parameter change of a mesoscopic system is a practical issue for future's circuit design. Nowadays most considered cases are various types of bias modulation, while the effect of change of conductor Hamiltonian is seldom addressed. In this paper, we investigate the response of ballistic transport induced by a sudden change of the conductor Hamiltonian. We formulize the terminal current in language of non-equilibrium Green's function. Our method is applied to one-dimensional tight-binding chains and we find that the terminal current has a delay to the Hamiltonian change. The amount of delay is not determined by the velocity of incident electrons in the bias window, but depends on the tight-binding hopping energy γ. The delay of current response at the detecting point away from where the Hamiltonian changes is Cγ?1, where C is a constant independent of the system.  相似文献   

14.
This paper reports our investigations on an exactly solvable network model of solids. General properties of diatomic lattices, in particular the dispersion relations for the energy levels, the structure of the energy bands and the density of states for bulk, surface and thin films are compared with the corresponding properties of the monatomic lattices which we have previously reported. For a thin film of finite thickness, we present a simple but informative method of analyzing Van Hove singularities in the density of states. Effects due to the inclusion of second neighbor interactions are also studied. Calculations are exact and the method has apparent advantages over other methods of discussing similar problems.  相似文献   

15.
《Current Applied Physics》2015,15(10):1205-1215
Calculations of renormalized perpendicular conductivity within Kubo formula employing single particle temperature dependent Green's function formalism for bilayer graphene has been attempted. On the basis of numerical analysis, perpendicular conductivity as a function of temperature, interlayer coupling, onsite Coulomb interaction and carrier concentration per site has been analyzed for both AA- and AB-stacked bilayer graphene. It is found that perpendicular conductivity increases with interlayer coupling and also with temperature at low temperatures while at higher temperatures, there is saturation in perpendicular conductivity. Influences of onsite Coulomb interaction and carrier concentration per site on perpendicular conductivity is just opposite to each other while onsite Coulomb energy suppresses the rate of increase of σ/σ⊥0 with temperature, on the other hand increase in carrier density per site enhance this rate significantly. Finally, theoretically obtained results on temperature dependent perpendicular conductivity are viewed in terms of electronic transport data as well as recent theoretical works available in bilayer graphene.  相似文献   

16.
张亚普  达新宇  祝杨坤  赵蒙 《物理学报》2014,63(23):234101-234101
电磁脉冲武器能够通过"前、后门"耦合效应对箱体内部电子元器件及电路板造成损伤,从而对电气电子设备的安全性构成严重威胁,因此,开展箱体电磁屏蔽效能的分析研究具有重要意义.推导了任意入射波条件下电大开孔箱体屏蔽系数的解析解,并在此基础上对箱体屏蔽效能进行了分析研究.首先通过矢量分解,得出任意入射平面波的坐标分量;再基于Cohn模型,获得了电大开孔的等效电偶、磁偶极子;然后通过镜像原理,计算出总的赫兹电矢量位、磁矢量位;最终求得电大开孔箱体内部任意观测点的电场解析解,用于箱体屏蔽系数计算.设计了5组验证性实验,仿真结果表明:该解析算法相对CST的均方误差为11.565 d B,绝对误差为8.015 d B,相关系数为0.921,从而验证了该算法的准确性;解析算法仿真的平均耗时为0.183 s,仅占CST耗时的1/7530,从而验证了该算法的高效性.  相似文献   

17.
18.
The field induced reorientation of the magnetization of ferromagnetic (or antiferromagnetic) structure is treated within the framework of many-body Green's function theory by considering all components of the magnetization. The mean field theory is used to calculate the nearest neighbour and the next-neighbour super-exchange J1(Cr–Cr) and J2(Cr–(Zn(Cd)–Se)–Cr), respectively, for the Zn1–x Cd x Cr2Se4 in the range 0 < x < 1. The intraplanar and the interplanar interactions are deduced. The high temperature series expansions (HTSEs) are derived for the magnetic susceptibility and the two-spin correlation functions for a Heisenberg ferromagnetic model on the B-spinel lattice. The calculations are developed in the framework of the random phase approximation (RPA). The magnetic phase diagram is deduced. A spin glass phase is predicted for intermediate range of concentration. The obtained results are comparable with those obtained by magnetic measurements. The critical exponents associated with the magnetic susceptibility (γ) and the correlation lengths (ν) have been deduced. The obtained values are comparable to those of 3D Heisenberg model.  相似文献   

19.
With the help of the nonequilibrium Green's function technique, we theoretically analyze the thermospin property through a typical T-shaped spin valve with spin-flip scattering in the linear regime. The influences of spin-flip coefficient of interdot λ, spin-flip coefficient of intradot η and interdot hopping coefficient t+δσΔt on thermospin property are discussed. As interdot hopping coefficient t is equal to energy level ε, the spectrum of Gs shows Fano-like effect with ε variation. Antiresonance position of Gs is almost unchanged and its width becomes narrower with ε increasing. Spin thermopower Ss is close to the maximum of the peak and charge thermopower Sc is equal to zero for t=ε. As a result, the pure spin thermopower Ss can be obtained, which means that a pure spin current may be produced by a temperature gradient in our system. It is found that spin figure of merit ZTs can reach a considerable value by adjusting key parameters of the system, such as Δt, β, α, ?. The typical T-shaped spin valve can be treated as a stable thermospin battery which allows to convert the heat energy to spin voltage, thus produces the pure spin current in the device.  相似文献   

20.
李长生  马磊  郭杰荣 《中国物理 B》2017,26(9):97301-097301
We adopt a self-consistent real space Kerker method to prevent the divergence from charge sloshing in the simulating transistors with realistic discrete dopants in the source and drain regions. The method achieves efficient convergence by avoiding unrealistic long range charge sloshing but keeping effects from short range charge sloshing. Numerical results show that discrete dopants in the source and drain regions could have a bigger influence on the electrical variability than the usual continuous doping without considering charge sloshing. Few discrete dopants and the narrow geometry create a situation with short range Coulomb screening and oscillations of charge density in real space. The dopants induced quasilocalized defect modes in the source region experience short range oscillations in order to reach the drain end of the device.The charging of the defect modes and the oscillations of the charge density are identified by the simulation of the electron density.  相似文献   

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