Spezifische Wärmen von HoCl3 · 6H2O und ErCl3 · 6H2O im Temperaturbereich zwischen 1,2 °K und 230 °K

Zeitschrift für Physik A Hadrons and nuclei - Die spezifischen Wärmenc Ho undc Er von HoCl3 · 6 H2O und ErCl3 · 6 H2O werden im Temperaturbereich zwischen 1,2 ΩK und 230...     

Electrical conductivity of slightly reduced rutile between 2° and 370°K

Abstract

The electrical resistivity and the Hall coefficient of slightly reduced rutile crystals were measured in the temperature range between about 2 °K and 370 °K. The time of reduction treatments between 900 °C and 1300 °C was usually as long as 300 hrs, which assures the homogeneous reduction of crystals, The conduction mechanisms in three temperature ranges, i. e. 1. 9～3°K, 3～100°K and 100～250°K, were discussed in terms of lattice defects evidenced by ESR studies.     

The 220°K defect in electron irradiated p-Type Germanium

Lattice defects introduced in p-type nondegenerate germanium by 1.5 MeV electron irradiation at liquid nitrogen temperature was investigated by means of electrical resistivity and Hall coefficient measurements. The annealing behavior of two kinds of defects, which anneal at about 220 °K, was investigated in detail. Each of them has an electron trap. Making use of trap-filling and emptying processes, the 220 °K defects are separated from other defects.     

Paramagnetische Relaxation von CeCl3·7H2O im Temperaturbereich von 1,1 bis 4,2°K

The paramagnetic relaxation of a single crystal of CeCl₃·7H₂O has been studied by the dispersion-absorption-method at temperatures between 1,1 and 4,2°K. Alternating magnetic fields with frequencies between 5 and 2660 Hz and parallel magnetic fields up to 4000 Oe have been used. The spin lattice relaxation time has been determined as a function of temperature. At two special rangesH ₁ andH ₄ of the magnetic field a second, temperature-independent dispersion-absorption region has been observed besides the temperature-dependent spin-lattice relaxation (double relaxation). At two other special magnetic fieldsH ₂ andH ₃ the anomalous field dependence of the high frequency adiabatic susceptibility suggests a second dispersion-absorption-region ocurring at frequencies, which we cannot attain experimentally. In all cases cross relaxation processes are combined with the spin lattice relaxation.     

+35°YLiNbO_3单晶的生长

LiNbO_3(简称LN)晶体是60年代发展起来的新材料。它是铁电体,具有压电、电光、声光等多种效应,且易于用提拉法在c轴方向生长出大块单晶,故应用颇为广泛。由于其压电性,它在超声领域中也占有重要地位。尤其LN+35°Y切板,具有机电耦合系数较高、频率常数较高、介电常数较低以及高温性能好等多种优点。很适宜于作高频和高温超声检测器的压电元件。因此,常希望采用此种晶体切板。     

A detailed model for the conductivity of magnetite below 119°K

The question of charge transport through the Fe₃O₄ lattice in the ordered state is reexamined. It is shown that only a fairly complicated defect can transfer charge. The implications of this model are compared with the experimental data.     

电化学发光淬灭法测定维生素K3

研究了维生素K3(VK3)对中性介质中鲁米诺-碘化钾电化学发光的淬灭作用,建立了一种对维生素K3测定的灵敏、简便、快速的新方法,该方法测定维生素K3的线性范围为3.2×10-9—5.1×10-6mol/L。     

Study on sensitivities of Love-wave immunosensors based on SiO2/36°YX-LiTaO3 and ZnO/36°YX-LiTaO3 structures

Love-wave immunosensors based on SiO₂/36°YX-LiTaO₃ or ZnO/36°YX-LiTaO₃ structures coated by special sensitive films have been fabricated and studied experimentally. A theoretical model using the partial wave theory of elastic waves propagating in three-layer structures covered by liquid loads is built up to calculate the sensitivities. To determine the elastic constants of the guiding layers, the phase velocities of the corresponding Love-wave devices are measured by a network analyzer, and the theoretical fitting of the experimental data are carried out. Then the relationships between the sensitivities of the Love-wave immunosensors and normalized thicknesses of the guiding layers are obtained, and there are optimized thicknesses of the guiding layers for getting maximum sensitivities. The experimental measurements and numerical calculations of the sensitivities of the Love-wave immunosensors show that both results are essentially consistent with each other.     

80—500°K间InSb的电导率、霍尔效应及磁阻效应

文中报导了80—500°K间n型及p型InSb的电导率、霍尔系数及磁阻效应的测量,所用样品的杂质含量(补偿后)为4×10¹³—7×10¹⁷cm^-3。由结果的分析得出InSb的本征载流子浓度、禁带宽度及电子迁移率等数值,讨论了电子的散射机构以及强磁场下磁阻与磁场强度成一次方正比关系的可能原因。