绿色长余辉材料MgAl_2O_4∶Mn~(2+)的合成及其发光特性

采用高温固相法在1350℃下合成了Mn2+掺杂的MgAl2O4发光材料,利用X射线衍射对所合成样品的结构进行了表征。用209nm的紫外灯照射样品后,观察到来自Mn2+的4T1-6A1跃迁的绿色长余辉发光。发光的激发光谱表明:Mn2+-3d组态内存在一系列强的激发峰,分别在279,361,386,427,451nm,同时还有209nm处的Mn-O电荷迁移带,激发该吸收带会产生很强的绿色余辉。测量了余辉的衰减曲线及热释光谱,分析了Mn2+掺杂浓度对样品余辉性质的影响,给出了余辉产生的可能模型。     

微波吸收法研究ZnO光电子衰减过程

微波吸收无接触测量技术可以用于半导体粉体材料、微晶材料等研究光生载流子衰减过程。本文采用微波吸收法在室温下分别测量了ZnO纳米材料和微晶材料的光电子衰减过程。发现在紫外激光短脉冲激发下,两种材料的导带光电子寿命有很大的差异,ZnO微晶粉体材料的光电子寿命为50ns,而ZnO纳米材料的光电子寿命仅为10ns。分析认为纳米ZnO的光电子寿命缩短是由于纳米ZnO晶体的表面积远远大于体材料的表面积,纳米材料的表面形成了大量的缺陷能级,加速了光电子的表面复合,缩短了光电子的寿命。纳米材料内部缺陷增多和量子限域效应同样会缩短光电子的寿命。     

Untersuchungen zum photokapazitiven Effekt von Phosphoren

Capacitance and loss angle of several phosphors are measured as a function of exciting irradiation intensity at different temperatures and different frequencies. Furthermore, the decay of the photocapacitive effect after shutting off the radiation is observed. Criteria are developed for deciding whether the photocapacitive effect is due to conduction band electrons (photoconductive effect of first kind), to impurity band electrons (photoconductive effect of second kind), or to polarization of filled traps (photodielectric effect). These are based on the decay behavior at low temperature (fast, slow, slow, respectively) and the dispersion at low frequencies (strong, strong, weak, respectively). It is shown that even for the photoconductive effect of first kind the interplay of conduction band and shallow traps is essential but that, nevertheless, conductivity data can be obtained from capacitance measurements.     

The angular distribution of electrons emitted from traps in MIM systems

Experimental results give evidence that the angular distribution of electrons emitted from sandwich cathodes at low temperatures is mostly formed by electrons which were absorbed by traps in the dielectric forbidden band during the transfer through the dielectric layer and then again liberated. For this reason the thermal as well as the field-assisted excitation is analyzed in detail in this paper. In both cases angular distributions (in case of the thermal excitation only in the numerical way) and approximate expressions for the height and the half-width of these distributions are obtained. The derived expressions contain cathode parameters (temperature, voltage used, mean free path and depth of traps) and they are usable for evaluation of these parameters from experimental characteristics.     

Transient behavior of the strong violet electroluminescence of Ge-implanted SiO2 layers

Si-based light emitters will be a key element of future optoelectronics. One of the most promising approaches is Ge implantation into thin SiO₂ films on crystalline Si. This system exhibits a strong violet electroluminescence with a power efficiency up to 0.5% [18], but the mechanism of electrical excitation is not yet fully understood. In this paper the electrical excitation of the luminescence centers is investigated by means of electrical and electroluminescence transient measurements. It is found that the most probable way to excite luminescence centers is the impact excitation by hot electrons. Whereas the injection is explained by trap-assisted tunneling of electrons from the substrate into the oxide, the electrons will be transported via traps or in the SiO₂ conduction band. Furthermore, the electroluminescence rise and decay time is estimated to be of the order of 100 μs. Received: 26 September 2001 / Published online: 29 November 2001     

Tunneling recombination luminescence under excitation of PbWO4:Mo crystals in the defect-related absorption region

Time-resolved emission and excitation spectra and luminescence decay kinetics were studied at 150-300 K for the green emission of PbWO₄:Mo crystals. It was found that the slow (μs-ms) decay component observed under excitation in the defect-related absorption region (around 3.8-3.9 eV) arises from the G(II) emission which appears at the tunneling recombination of optically created electron and hole centers. The study of the emission decay kinetics at different temperatures and excitation intensities allowed concluding that both the monomolecular and the bimolecular tunneling recombination process can be stimulated in the mentioned energy range. The monomolecular process takes place in the isolated spatially correlated pairs of electron and hole centers produced without release of electrons into the conduction band. The bimolecular process takes place in the pairs of randomly distributed centers created at the trapping of free electrons from the conduction band. The formation of electron centers under irradiation in the defect-related absorption region was investigated by the electron spin resonance (ESR) and thermally stimulated luminescence (TSL) methods. The possibility of various photo-thermally stimulated defects creation processes, which take place with and without release of free electrons into the conduction band, was confirmed.     

Stimulation von ZnS-Phosphoren mit langwelligem Infrarot

Stimulation experiments with ZnS phosphors, using IR wavelengths from 2 to 15μ, were performed at the temperature of liquid helium. For this purpose a cryostat was constructed which allowed to keep the samples and the screening device at the temperature of liquid helium. Moreover glow curves after different decay times at 6 °K were taken. After excitation of ZnS phosphors a strong release of carriers from relatively deep traps is taking place although the phosphor is kept at the temperature of liquid helium. This emptying of traps is accompanied by a luminous recombination of the released electrons with the activator levels producing an intense afterglow which can be observed over a long time. This phenomenon cannot be explained by thermal release of trapped electrons into the conduction band, followed by recombination with the activator levels because of the depth of the emptied traps. The rate of thermal carrier release was calculated to be about 10^?29 sec^?1 for 0,05 eV deep traps, but the observed rate was of the order of 10^?4 sec^?1. An emptying of traps by IR-stimulation can be excluded because the phosphor was surrounded by a concentric screening device kept at 4.2 °K. The effect can be explained by luminous tunneling of trapped electrons to the activator levels. An estimate of the tunneling rate gives a value agreeing with the experimental results. If such a “tunnel afterglow” does exist a spectral shift to longer wavelengths compared to the usual fluorescence and phosphorescence is to be expected. This could be actually observed. Additional experiments included IR-stimulated emission after various decay times, glow curves taken after such stimulation, and studies of the influence of temperature. The results rule out the possibility that the carriers were released from the traps by IR light. Apparently, IR radiation affects the potential barrier between the traps and the activators so that the rate of recombination by tunneling increases.     

PbWO4闪烁晶体的发光动力学模型

在对PbWO₄闪烁晶体的光谱特性、发光衰减及其温度依赖以及热释光的研究基础上,并结合理论计算,提出了PbWO₄晶体发光的动力学模型,给出了PbWO₄晶体的基本能带结构及激子发光中心能态、陷阱能级在能隙中的位置。用此模型可以完整说明PbWO₄的发光过程,特别是导致室温下发光效率低的原因。最后还对其主发射成分蓝、绿发光中心的起源作了简要讨论。     

Evidence of localized luminescence centers in porous silicon

The mechanism by which porous silicon luminesces when excited by UV radiation is still unknown. As opposed to de-localized models, proposed by other researchers, in which conduction band carriers are believed to recombine with traps during luminescence, we show evidence for and argue ha favour of a localized structure in which, on excitation, electrons are promoted to higher energy levels within a luminescence center but are not given up to the conduction band. Luminescence occurs when they relax to a lower level in the center.     

ZnO:Zn荧光材料的光电子时间分辨谱和荧光光谱

采用微波吸收法,测量了ZnO及ZnO：Zn荧光粉末材料受到超短激光脉冲激发后其导带电子的衰减过程,并测量了室温下荧光材料的吸收光谱和发射光谱。发现ZnO材料的光电子寿命为64ns,而ZnO：Zn荧光材料的的光电子寿命为401ns。分析认为ZnO：Zn寿命的延长是由于材料中缺陷结构的增加导致电子在导带上的弛豫时间变长。     

Electron heating through a set of random levels in the conduction band of insulators induced by femtosecond laser pulses

We develop a theory describing the heating of electrons in crystalline insulators irradiated by high-intensity laser pulses. In agreement with photoelectron yield versus intensity measurements, we assume that electrons are excited into the conduction band from defect layers and traps. The electron dynamics due to direct inter-branch transitions within the conduction band is simulated by solving of time-dependant Schr?dinger equation. The set of levels for this equation is supposed to be random with a distribution function equal to the density of states in the conduction band. The influence of different parameters on the electron heating efficiency is studied. The theory is applied for diamond; the theoretical spectrum is in qualitative agreement with the experimental observations.     

微波吸收法研究Mn,Cu掺杂对ZnS:Mn,Cu光生载流子复合过程的影响

采用微波吸收法，测量了ZnS:Mn,Cu粉末材料受到超短脉冲激光激发后，其光生电子和浅束缚态电子的衰减过程.发现Mn,Cu的浓度对导带电子的寿命有明显的影响，提高掺杂浓度会使光生电子的寿命大大缩短，还研究了掺杂浓度对光致发光强度的影响. 关键词： 发光材料 硫化锌 光电子 微波吸收技术     

Shallow hole traps in ZnS: Cu,Al phosphors

Localized shallow trapping levels for minority carries, i.e., holes, in ZnS: Cu, Al phosphors are studied by the Dishman method, i.e. by measuring the temperature dependence of the ratio of the quantum efficiency for the green luminescence by the host excitation to that by the direct copper acceptor excitation over the temperature range from 4.2 K to room temperature. The ratio shows increases in three temperature ranges of 20–53 K, 58–100 K and 180–260 K. These increases are attributed to the release of holes to the valence band from three kinds of traps. Analyzing results, the depths of these traps are determined as 35, 68 and 306 mev.     

SrS:Eu与SrS:Eu,Sm中电子陷阱与光存储研究

对SrS:Eu和SrS:Eu,Sm激发初始阶段的荧光上升过程和余辉进行了研究,并进一步考证其中 电子陷阱的属性.通过两种样品和两个阶段的比较,对陷阱数量和深度的变化、量子效率以 及电子俘获和释放、复合过程进行了分析,发现Sm离子并不影响陷阱的数量.利用吸收光谱 方法研究了SrS:Eu,Sm中电子由陷阱能级向导带的跃迁.通过陷阱饱和-倒空吸收谱差,即激 励吸收谱及其强度随Eu,Sm浓度的变化,探讨了掺杂浓度对陷阱浓度和光存储饱和量的影响. 结果表明Sm离子的作用是使陷阱能级加深从而能稳定地储存电子.通过激励吸收谱峰值强度 可确切地比较光存储材料在这方面的性能,并与光激励谱的测量方法作了对照. 关键词： 电子陷阱 光存储 电子俘获 光激励发光     

Excitation spectra of donor-acceptor pair photoluminescence in ZnTe

Photoluminescence excitation spectra of donor-acceptor pairs have been observed in phosphorus doped ZnTe. Binding energies of the donor and the acceptor is estimated from the spectra. Emission spectra measured under below-band-gap excitation showed sharp bands superimposed with a broad emission band. The result indicates the existence of two decay processes under the below-band-gap excitation: (1) recombination of an electron and a hole trapped on a given D-A pair, and (2) recombination of D-A pairs with various distances for which bound electrons are formed via conduction band.     

An algorithm for unified analysis on the thermoluminescence glow curve

An algorithm was developed to integrally handle excitation by radiation, relaxation and luminescence by thermal or optical stimulation in thermoluminescence (TL) and optically stimulated luminescence (OSL) processes. This algorithm reflects the mutual interaction between traps through a conduction band. Electrons and holes are created by radiation in the beginning, and these electrons move to the trap through the conduction band. These holes move to the recombination center through a valence band. The ratio of the electrons allocated to each trap differs with the recombination probability and these values also relevant to the process of luminescence. Accordingly, the glow curve can be interpreted by taking the rate of electron–hole pairs created by ionizing radiation as a unique initial condition. This method differs from the conventional method of interpreting the measured glow curve with the initial electron concentration allocated to each trap at the end of irradiation. A program using the Visual Studio's C# subsystem was made to realize such a developed algorithm. To verify this algorithm it was applied to LiF:Mg,Cu,Si. The TL glow curve was deconvoluted with a model of five traps, one deep trap and one recombination center (RC).     

Electron-acceptor luminescence from a non-Maxwellian distribution of photoexcited electrons in GaAs

Distribution functions are calculated for photoexcited electrons in GaAs, under conditions of continuous, monochromatic excitation. The lattice temperature is taken to be 1.2 K and the excitation intensity such that the density of photoexcited carriers is insufficient for the distribution to be affected by intercarrier scattering. A Boltzmann equation approach is used to take account of the effects of, injection of electrons into the conduction band, at an energy below the threshold for longitudinal optical phonon emission, scattering by acoustic phonons, via the deformation potential and piezoelectric interactions, and recombination. The equation is solved numerically using an iterative technique and the distribution functions are found to differ significantly from a Maxwellian form. Emission spectra due to conduction band to neutral acceptor transitions are derived from the computed distribution functions and are compared with recent experimental results.     

Zum Lumineszenz-Abklingverhalten von ZnS/Cu

The decay characteristics of ZnS/(10^?4) Cu have been investigated by ion pulse excitation. The excitation density could be varied by using ions of different masses. The decay is exponential. The decay times depend on the ion pulse duration and on the penetration depth of the used ions. The green emission shows two different decay times. The intensity of the slower component of the green emission could be altered by excitation with UV-light before decay measurement. In the case of the slower component of the green emission we suppose an interaction between the excited states of the luminescence centres and energetically deep electron traps.     

The relationship between thermal activation energy,infrared stimulated luminescence and anomalous fading of K-feldspars

A strong dependence of thermal activation energy (TAE) on infrared (IR) stimulation time for the infrared stimulated luminescence (IRSL) signal was observed for K-feldspar grains extracted from several sediments and granites from China. A TAE value as low as ～0.1 eV was observed at the beginning of IR stimulation and increased to ～0.45 eV after 90 s. For a trap depth of ～2 eV below the conduction band for the IRSL traps, the TAE value of ～0.45 eV is consistent with the energy gap between the excited states (～0.5 eV below the conduction band) and conduction band. This phenomenon is explained as the result of the coexistence of thermally assisted recombination via conduction band or band-tail states hopping and athermal tunnelling recombination of electrons from the excited states under IR stimulation, leading to the observation of a higher anomalous fading rate in the initial part of the IRSL decay curve.