配体链长对PbS量子点薄膜/Al肖特基结整流特性的影响

利用热注入法合成带有油酸配体的PbS量子点, 用短链乙醇胺替代长链油酸做为PbS量 子点的配体。 对比了由两种材料制得的量子点薄膜与Al形成的肖特基结的J-V特性,采用热 电子发射理论对其J-V特 性进行分析,结果发现,接有短链乙醇胺的PbS量子点薄膜具有更优的整流特 性,理想因子n为3.8,明显低 于采用油酸配体的PbS量子点(n=4.6)。 研究表明,短链配体有利于提高PbS薄膜表面的均匀性并形成较好的肖 特基接触;短链置换过程提高了量子点薄膜与Al电极的接触势垒高度,使肖特基结反向 漏电流降低。     

PbS胶体量子点稳定性研究进展

PbS胶体量子点由于其制备简单、成本低廉,在近红外波段通过调节尺寸就能改变带隙,在太阳能电池、红外探测、LED、生物成像等多个领域均有广泛的应用,但稳定性限制了其大规模推广.本文总结了影响PbS胶体量子点稳定性的机理,从制备、结构、保存、使用等多个环节探讨提高其稳定性的具体措施.提出进一步改进PbS胶体量子点稳定性的具...     

PbS量子点同质P-N结光电探测器

PbS胶体量子点因其带隙可调、可溶液加工、吸收系数高等优异特性而广泛应用于光电探测器领域。然而基于光电二极管结构的PbS量子点光电探测器通常会使用不同的材料来制备N型层,从而增加了器件设计和工艺的复杂性,不利于这类光电探测器未来在面阵成像芯片中的应用。为简化制备工艺,提出了一种PbS量子点同质P-N结光电探测器,仅通过一种工艺过程实现了器件P型层和N型层的制备。经测试,探测器对不同入射光强度的探测表现出了良好的线性响应;在0.5 V反向偏压作用下,器件在700 nm处的响应度为0.11 A/W,比探测率为3.41×1011 Jones,展现出了其对弱光探测的优异能力。结果表明文中提出的PbS量子点同质PN结光电探测器有助于推动其在面阵成像领域中的发展。     

含PbS量子点串联双隧道结I—V特性仿真

对形成单电子器件的典型串联双隧道结结构模型,通过求解含时薛定谔方程,计算了PbS量子点自组装体系的隧穿电流与偏压的关系。给出了含PbS量子点串联双隧道结在室温下的I-V特性仿真数据,结果与实验符合得较好。     

PbS量子点的化学溶液法制备技术

在Zhang制备PbS量子点技术的基础上,作者对其技术进行了改进,通过引入溶剂和反应添加剂,在室温,常压下合成了PbS量子点.由于该改进技术可通过选择不同种类的溶剂、不同种类的添加剂、不同的反应物浓度以及不同的反应时间,来控制PbS量子点的尺寸及表面形貌,这为化学溶液法室温制备PbS量子点带来了极强的可控性.这种廉价实用的室温、常压量子点制备技术在量子点红外探测器、生物标签,有机/无机复合材料等材料与器件等领域有潜在的应用价值.     

PbS量子点电致发光器件中的光子晶体结构设计

将PbS量子点电致发光器件的发光层引入二维光子晶体结构,利用光子晶体的光子带隙效应提高器件的发光效率。采用平面波展开法计算了以空气为背景,由圆形或方形介质柱所构成的不同晶格排列的光子晶格的能带图,获得光子晶体结构参数对完全带隙的影响规律。结果显示:采用方形介质柱以蜂窝方式排列的光子晶体在填充率f=0.283时具有较宽的完全带隙△ω=0.134 6(2πc/a)。利用有限元法模拟了晶格常数a=476 nm,方形介质柱边长l=167 nm时,波长为1 124 nm的光在该光子晶体中传播的光场分布图。计算得到具有该光子晶体结构的PbS量子点电致发光器件的发光效率可达57.9%。     

利用PbS量子点波长转换膜实现近红外电致发光

采用聚合物poly(N-vinylcarbazole) (PVK)掺 杂小分子蓝色荧光材料 N,N′-bis(naphthalen-1-y)-N,N′-bis(phenyl) benzidine (NPB)作为蓝色发光层, 将PbS量子点与环氧树脂的混合 物涂覆在ITO导电玻璃背面作为波长转换膜,制备了结构为PbS QDs/Glass/ITO/PVK:NPB /Al的近红外波 长转换有机电致发光器件(OLED)。蓝色发光层中,NPB发出峰值位于445nm的蓝光。通过控制前驱体S/Pb比例调节PbS量 子点的粒径,正向电场下获得900～1600nm范 围可调节峰值的近红外光发射。经过优化波长转换膜中PbS量 子点比例,增强了波长转换膜对蓝光的吸收,当PbS量子点比例为10%左右时器件发射强 度最高。     

基于PbS量子点的可调谐高能量锁模光纤激光器

基于低维纳米材料的飞秒光纤激光器在光学开关、光纤传感和光通信领域中发挥着重要的作用。然而,低损伤阈值限制了其在高能量激光领域的实际应用。为了解决这一问题,实验中基于PbS量子点饱和吸收体,在近零色散区研究掺铒光纤激光器的飞秒脉冲输出特性,脉冲中心波长为1 568.6 nm,光谱的3 dB带宽为11.4 nm,脉冲半高全宽为361 fs。利用多模光纤中的非线性多模干涉效应实现带宽可调的光谱滤波效应,调节偏振相关“基模”引起的群时间延迟量调控腔内总色散量,升高泵浦驱动电流达到饱和吸收体的反饱和吸收特性区域,实现从展宽脉冲到高能量耗散孤子共振脉冲的切换。由于局部的非同步色散波与孤子之间的相消干涉效应,导致耗散孤子共振脉冲光谱出现了dip型边带和Kelly边带不对称地分布在光谱两边的现象。通过调谐腔内脉冲的偏振状态和泵浦功率,高能量脉冲的半高全宽可以在7.7～23 ns之间调谐。当泵浦驱动电流达到800 mA时,腔内激光脉冲能量为34.8 nJ,其损伤阈值大于60 mJ/cm²。该工作为实现高效、高能量飞秒光纤激光提供了新的解决方案。     

量子点场效应晶体管单光子探测器的设计与特性分析

量子信息技术的发展对单光子探测器提出了更高的性能要求,新型的量子点单光子探测器具有很好的性能和发展潜力。研究了一种基于量子点场效应晶体管(QDFET)的单光子探测器,介绍了QDFET的光电导增益原理,对QDFET进行了材料选择和结构设计,并重点对QDFET的量子化光电导和增益的噪声平衡进行了实验分析,结果表明QDFET单光子探测在灵敏度、光子响应、光子分辨等方面具备很好的特性。     

Influence of post-synthesis annealing on PbS quantum dot solar cells

Colloidal quantum dots (CQDs) are attractive materials for optoelectronic applications due to their low-cost, facile processing and size-dependent band-gap tunability. Solution-processed organic, inorganic and hybrid ligand-exchange techniques have been widely applied in QDs-based solar cells (QDSCs) to improve the power conversion efficiency (PCE). Till now, however, few have been reported to date the influence of post-synthesis annealing on the electrical characteristics of the PbS QDSCs. To reduce the influence of diffusion length, in this work, we present the thermal annealing treatment effect on the device performance of a typical heterojunction solar cell ITO/ZnO/PbS/Au with a relatively thinner active layer. By changing the annealing temperatures during the post-synthesis processes, we found its PCE increase from 3.26% to 4.52% after annealing at 140 °C, showing a 38.6% enhancement due to a dramatic enhancement of short circuit-current density (J_SC) but a slight decrement of open-circuit voltage (V_OC), and also, the mechanisms underneath for the enhanced performance are discussed in details.     

Size dependence saturation and absorption of PbS quantum dots

The saturation intensity for lead sulfide quantum dots in a titanium dioxide-glycerol matrix (PbS/TiO₂-glycerol) on a glass substrate has been studied as a function of quantum cluster concentration and cluster size. The saturation intensity in these materials is strongly dependent on the size of the semiconductor nanocrystals, their concentration, or the sample thickness. The samples are reflective at a certain range of the incoming intensity of the optical field and become transparent over a threshold intensity beyond which the output and input intensities are linearly related. The system studied involves very dilute distribution of PbS QD of dimension∼10 nm embedded in a matrix of TiO₂-glycerol. Since the distribution is relatively constant in each deposited layer, the total number of QDs in a given area is proportional to the thickness. We found that the threshold of power separating absorption-bleaching, Pth is linearly related to the thickness, with values of Pth ∼few mW/cm², more than 2-3 orders of magnitude below that of QDs with dimension∼1 μm, representing a typical solid.     

Size-dependent polymer/CuInS2 solar cells with tunable synthesis of CuInS2 quantum dots

This paper reports the size-dependent performance in polymer/CuInS₂ solar cells with tunable synthesis of chalcopyrite CuInS₂ quantum dots (QDs) by the solvothermal method. The CuInS₂ QDs of 3.2–5.4 nm in size are fine tuned by the reaction time in the solvothermal process with the slow supply of In³⁺ ions during the crystallization, and the band gaps increased with QDs sizes decreasing according to the results from the characterization of sizes, morphologies, component elements, valence states and band gaps of CuInS₂ QDs. We fabricated MEH-PPV/CuInS₂ solar cells, and the photoactive layer of device displayed size-dependent light-harvesting, charge separation and transport ability. Moreover, the solar cells exhibit size-dependent short circuit current (J_sc) and open circuit voltage (V_oc), with higher performance in both J_sc and V_oc for smaller CuInS₂ QDs, resulting in the maximum power conversion efficiency of ca. 0.12% under the monochromic illumination at 470 nm; CuInS₂ QDs actually serve as an effective electron acceptor material for the MEH-PPV/CuInS₂ solar cells with the wide spectral response extending from 300 to 900 nm.     

Fabrication and analysis of multijunction solar cells with a quantum dot (In)GaAs junction

InAs quantum dots (QDs) have been incorporated to bandgap engineer the (In)GaAs junction of (In)GaAs/Ge double‐junction solar cells and InGaP/(In)GaAs/Ge triple‐junction solar cells on 4‐in. wafers. One sun AM0 current–voltage measurement shows consistent performance across the wafer. Quantum efficiency analysis shows similar aforementioned bandgap performance of baseline and QD solar cells, whereas integrated sub‐band gap current of 10 InAs QD layers shows a gain of 0.20 mA/cm². Comparing QD double‐junction solar cells and QD triple‐junction solar cells to baseline structures shows that the (In)GaAs junction has a V_oc loss of 50 mV and the InGaP 70 mV. Transmission electron microscopy imaging does not reveal defective material and shows a buried QD density of 10¹¹ cm⁻², which is consistent with the density of QDs measured on the surface of a test structure. Although slightly lower in efficiency, the QD solar cells have uniform performance across 4‐in. wafers. Copyright © 2013 John Wiley & Sons, Ltd.     

酞菁染料ZnPc和Q-PbS复合敏化纳米晶ZnO薄膜电极的研究

利用溶胶-凝胶旋涂镀膜法结合热处理工艺在FTO玻璃上制备了ZnO薄膜,并通过X射线衍射(XRD)、扫描电子镜(SEM)对其晶相及表面形貌进行了表征;以酞菁染料ZnPc和窄禁带半导体PbS量子点(Q-PbS)为敏化剂,分别制备了FTO/ZnO/ZnPc电极、FTO/ZnO/Q-PbS电极和FTOZnO/Q-PbS/ZnPc电极,结果表明,ZnPc和Q-PbS对ZnO纳米颗粒膜产生了良好的敏化作用,且两者的复合敏化效果最好;制备了FTO/ZnO/Q-PbS/ZnPc为光阳极的染料敏化太阳能电池(DSSC),在模拟太阳光下,电池的开路电压为304mV,短路电流为1.42mA,光电转换效率为0.696%,填充因子为0.348。     

ZnSe quantum dots sensitized electrospun ZnO nanofibers as an efficient photoanode for improved performance of QDSSC

In the present study, zinc selenide (ZnSe) quantum dots (QDs) with an average size of ~2.6 nm were prepared by hot injection method and used as a sensitizer onto the electrospun ZnO nanofibers using 3-mercaptapropionic acid as a linker agent. The optical absorption, photoluminescence and time-resolved photoluminescence (TRPL) studies for ZnSe sensitized ZnO NFs were performed to give insight about the improvement in optical properties. The performances of fabricated QDSSCs was examined in detail using cobalt sulfide (CoS) as a counter electrode and polysulfide redox couple (S²⁻/S_x²⁻) as an electrolyte. The ZnSe QDs sensitized ZnO nanofibers showed an appreciable improvement in short circuit current density (6.60 mA/cm²) with a maximum power conversion efficiency of 1.24% under 1 sun illumination of 100 mW/cm². This enhancement is mainly due to better light harvesting ability of ZnSe QDs and ZnO NFs, and lower recombination of photoinjected electrons with the polysulfide electrolyte. The improvement in power conversion efficiency (PCE) and reduction in back electrons recombination are supported by photovoltaic and electrochemical impedance studies. Finally, stability test was carried out over a span of 30 days (720 h) under one sun illumination to know about the practical applicability of the resultant QDSSC.     

Preparation of SnS quantum dots for solar cells application by an in-situ solution chemical reaction process

SnS quantum dots (QDs) with size of 8 nm were synthesized by an in-situ room temperature solution chemical reaction process. Stannous chloride, as Sn precursor, was coated on the TiO₂ photo-anodes to form a solid precursor film. Ammonium sulfide was dissolved into ethanol to form anionic reaction solution. SnS quantum dots were generated by immersing the Sn-coated TiO₂ photo-anodes into the anionic solution. The structure, morphology and optical absorption properties of the SnS/TiO₂ photoanodes were investigated by means of XRD, SEM, TEM and UV–vis measurements. The photovoltaic properties of the SnS QDs sensitized TiO₂ solar cells were optimized by changing the number of deposition cycles of the SnS QDs. It turns out that the SnS/TiO₂ solar cell with 20 deposition cycles exhibited the best photovoltaic performance with an open-circuit voltage V_oc of 510 mV, a short-circuit current density Jsc of 2.41 mA, a fill factor FF of 0.49 and a power conversion efficiency η of 0.61% under AM 1.5 illumination. This result is interpreted in terms of minimization of the charge transfer resistance. The performance will drop for further deposition because the charge transfer resistance will increase due to QDs agglomeration.     

Cation‐Exchange Synthesis of Highly Monodisperse PbS Quantum Dots from ZnS Nanorods for Efficient Infrared Solar Cells

Infrared solar cells that utilize low‐bandgap colloidal quantum dots (QDs) are promising devices to enhance the utilization of solar energy by expanding the harvested photons of common photovoltaics into the infrared region. However, the present synthesis of PbS QDs cannot produce highly efficient infrared solar cells. Here, a general synthesis is developed for low‐bandgap PbS QDs (0.65–1 eV) via cation exchange from ZnS nanorods (NRs). First, ZnS NRs are converted to superlattices with segregated PbS domains within each rod. Then, sulfur precursors are released via the dissolution of the ZnS NRs during the cation exchange, which promotes size focusing of PbS QDs. PbS QDs synthesized through this new method have the advantages of high monodispersity, ease‐of‐size control, in situ passivation of chloride, high stability, and a “clean” surface. Infrared solar cells based on these PbS QDs with different bandgaps are fabricated, using conventional ligand exchange and device structure. All of the devices produced in this manner show excellent performance, showcasing the high quality of the PbS QDs. The highest performance of infrared solar cells is achieved using ≈0.95 eV PbS QDs, exhibiting an efficiency of 10.0% under AM 1.5 solar illumination, a perovskite‐filtered efficiency of 4.2%, and a silicon‐filtered efficiency of 1.1%.     

Application research of CdS: Eu3+ quantum dots-sensitized TiO2 nanotube solar cells

Trivalent Eu³⁺-doped CdS quantum dot (CdS: Eu³⁺ QD)-sensitized TiO₂ nanotube arrays (TNTAs) solar cells are prepared by using the direct adsorption method. The influences of sensitization time, sensitization temperature, and Eu³⁺ ion concentrations are investigated systematically. The photo-current of the CdS: Eu³⁺ QDs/TiO₂ nanotubes appear at the main absorption region of 320–480 nm, and the maximum incident photon to the current conversion efficiency (IPCE) value is 21% at 430 nm when the sensitization condition is 4% doping Eu³⁺ concentration, 60 °C sensitization temperature, 8 h sensitization time. Compared with the un-doped CdS QD-sensitized TNTAs, the conversion efficiency and IPCE of CdS: Eu³⁺ QDs/TNTAs are two times and three times than that of un-doped CdS QDs sensitized TNTAs. This scenario exhibits the potential applications of rare earth elements in QD-sensitized solar cells.