Magnon-mediated binding between holes in an antiferromagnet

The long-range forces between holes in an antiferromagnet are due to magnon exchange. The one-magnon exchange potential between two holes is proportional to cos(2 ϕ)/r ² where r is the distance vector of the holes and ϕ is the angle between r and an axis of the square crystal lattice. One-magnon exchange leads to bound states of holes with antiparallel spins resembling d-wave symmetry.     

Thermal conductivity of crystalline fullerite C60 in the simple cubic phase

The behavior of the thermal conductivity k(T) of bulk faceted fullerite C₆₀ crystals is investigated at temperatures T=8–220 K. The samples are prepared by the gas-transport method from pure C₆₀, containing less than 0.01% impurities. It is found that as the temperature decreases, the thermal conductivity of the crystal increases, reaches a maximum at T=15–20 K, and drops by a factor of ∼2, proportional to the change in the specific heat, on cooling to 8 K. The effective phonon mean free path λ _p, estimated from the thermal conductivity and known from the published values of the specific heat of fullerite, is comparable to the lattice constant of the crystal λ _p∼d=1.4 nm at temperatures T>200 K and reaches values λ_p∼50d at T<15 K, i.e., the maximum phonon ranges are limited by scattering on defects in the volume of the sample in the simple cubic phase. In the range T=25−75 K the observed temperature dependence k(T) can be described by the expression k(T)∼exp(Θ/bT), characteristic for the behavior of the thermal conductivity of perfect nonconducting crystals at temperatures below the Debye temperature Θ (Θ=80 K in fullerite), where umklapp phonon-phonon scattering processes predominate in the volume of the sample. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 8, 651–656 (25 April 1997)     

Anomalous behavior of the interlayer resistance of a BSCCO-2212 crystal in a parallel magnetic field

The electrical resistance across the Cu-O layers of a BSCCO-2212 single crystal is investigated in the range of angles 0°⩽φ⩽90° between the magnetic field H⩽15 T and the ab plane. It is found that the temperature dependence R(T) at the transition into the mixed state is much sharper for φ≃0° than for 1°≲φ≲90°, where R is determined by the perpendicular component of the magnetic field and is described by the Arrhenius law R∼exp(−U/T). For H∥ ab hysteretic jumps in R(T, H), which vanish as the current increases, are observed at fields in the range 5.5⩽H⩽11 T. This effect can be attributed to a commensurate phase transition in a lattice of Josephson vortices. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 2, 123–128 (25 January 1996)     

Low-frequency lattice dynamics in Ba1−x KxBiO3 oxides according to 39K NMR data

The spin-lattice relaxation times T ₁ in Ba_1−x K_xBiO₃ (x=0.3, 0.4, 0.5) were measured in the normal temperature range (20–300 K).A substantial contribution to the spin-lattice relaxation rate from dynamic local distortions of the crystal lattice near potassium atoms is found. The activation energy of this process increases with decreasing potassium concentration, and the frequency of lattice excitations decreases. The nature of the low-frequency lattice dynamics is discussed. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 5, 344–349 (10 September 1999)     

Excess 1/f noise in systems with an exponentially wide spectrum of resistances and dual universality of the percolation-like noise exponent

The excess 1/f noise in a random lattice with bond resistances r∼exp(−λx), where x is a random variable and λ≪1, is studied theoretically. It is shown that if the correlation function {δr ²}∼r r ^θ+2, then the relative spectral density of the noise in the system is expressed as C _e∼λ^m exp(−λ(1−p _c)), where p _c is the percolation threshold and m=νd (ν is the critical exponent of the correlation length and d is the dimensionality of the problem). It is hypothesized that the exponent m possesses a dual universality: It is independent of 1) the geometry of the lattice and 2) the θ-mechanism responsible for the generation of the local noise. Numerical modeling in a three-dimensional lattice gives m=52.3 for θ=1 and θ=0, in agreement with the hypothesis. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 8, 614–618 (25 April 1996)     

Effect of thermal expansion on the elastic moduli and Debye temperature of paramagnetic lutetium

The temperature dependence of the Young’s modulus E of paramagnetic lutetium has been studied. It has been shown that an important reason for the dependence E(T) is thermal expansion of the crystal lattice, which also leads to a change in the Debye temperature Θ. The effect of this factor is also revealed in the thermodynamic properties of metals. In particular, we have shown that there is another contribution to variation of the total specific heat of lutetium, associated with the Θ(T) dependence and comparable with the electronic contribution. Fiz. Tverd. Tela (St. Petersburg) 40, 1581–1584 (September 1998)     

Shape of the magnetic resonance line in a thin film on the surface of an anisotropic superconductor

The shape of the EPR line in a thin (=λ/2, where λ is the London penetration depth of the magnetic field in the superconductor) paramagnetic film deposited on the surface of an anisotropic superconductor is calculated in an oblique magnetic field with allowance for the inhomogeneity of the local magnetic field of the Abrikosov vortex lattice. It is shown that, as the tilt angle of the external magnetic field is varied, the shape of the EPR line changes noticeably. This fact can give additional information about the superconductor parameters (the symmetry type of the vortex lattice and the anisotropy parameter of the superconductor). Fiz. Tverd. Tela (St. Petersburg) 41, 386–388 (March 1999)     

Fermi surface of doped lithium

The Korringa-Kohn-Rostoker method with Green’s function averaged over the atomic configurations in a complex Ising lattice and a muffin-tin potential was used to calculate the electronic-band structure in lithium containing vacancies and s, p, and d impurities. It is shown that substantial changes in the profile of the Fermi surface do not lead to necking, as was postulated previously, but cause splitting of the electronic states at the face of the Brillouin zone. This is attributed to the reduced symmetry of the crystal lattice with impurity excitation of the electronic-subsystem. Fiz. Tverd. Tela (St. Petersburg) 40, 1185–1186 (July 1998)     

Model of isostructural dynamical phase transition in anharmonic crystal with possible relevance to SrTiO3

A new type of phase transition is discussed which corresponds to a pairing of phonons of different lattice modes due to their anharmonic attraction in a crystal. It is shown that the main features of the isostructural phase transition observed in SrTiO₃ at T≃37 K can be explained qualitatively by the phonon pairing phenomenon. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 6, 399–404 (25 March 1998)     

Physical properties of n-CdGeAs2 single crystals prepared by low-temperature crystallization

The first results obtained in studies of the temperature dependences of electrical conductivity and Hall constant of n-CdGeAs₂ single crystals prepared by low-temperature crystallization are reported. It has been established that the method developed permits growing single crystals with a free-electron concentration ⋍(1−2)×10¹⁸ cm⁻³ and a Hall mobility ⋍10000 cm²/(Vs) at T=300 K. It is shown that the temperature dependence of Hall mobility exhibits a behavior characteristic of electron scattering by lattice vibrations, whereas below 150 K a deviation from this law is observed to occur evidencing an increasing contribution of static lattice defects to scattering. The Hall mobility in the crystals prepared was found to reach ⋍36000 cm²/(Vs) at 77 K. Photosensitive heterojunctions based on n-CdGeAs₂ single crystals were prepared. The spectral response of the photosensitivity of these structures is analyzed. It is concluded that this method is promising for preparation of perfect CdGeAs₂ crystals. Fiz. Tverd. Tela (St. Petersburg) 41, 1190–1193 (July 1999)     

Features of magnetic phase transitions in iron-manganese arsenides of the type Fe a−x MnxAs (a≈1.6)

This paper discusses how temperature/pressure processing affects the cascade of magnetic phase transitions in the alloy Fe_0.5Mn_1.1As with a C38 tetragonal crystal lattice. It shows that after various temperature/pressure treatment regimes (quenching of the sample from 800 °C under pressures of 30–60 kbar) no transition to the low-temperature phase is observed, as a result of which the ferrimagnetic phase extends to liquid-nitrogen temperatures. These results are analyzed on the basis of a qualitative model that takes into account the competition of ferromagnetic and antiferromagnetic interactions within and between nonequivalent crystallographic subsystems. Fiz. Tverd. Tela (St. Petersburg) 39, 889–893 (May 1997)     

Vortex lattice transitions in YNi2B2C

We have performed extensive small-angle neutron scattering (SANS) diffraction studies of the vortex lattice in single crystal YNi₂B₂C for B‖c. High-resolution SANS, combined with a field-oscillation vortex lattice preparation technique, allows us to separate Bragg scattered intensities from two orthogonal domains and accurately determine the unit cell angle, β. The data suggest that upon increasing field there is a finite transition width where both low- and high-field distorted hexagonal vortex lattice phases, mutually rotated by 45°, coexist. The smooth variation of diffracted intensity from each phase through the transition corresponds to a redistribution of populations between the two types of domains.     

Unified picture of the distribution of electric field gradients at Cu, O, and Tm sites in ReBa2Cu3O7−δ

An abundant set of published experimental NMR/NQR data on electric field gradients in ReBa₂Cu₃O_7−δ high temperature conductors, where Re=Y and Tm, is used as a test for the singlet-correlated band theory. Because of the unusual spectral weight (“capacity”) of this band, it has been possible to match the number of holes per lattice site to photoemission data on the energy spectrum and the location of the Fermi level. In the framework of a unified picture of the distribution of holes (charges) it has been possible for the first time to explain satisfactorily the observed electric field gradients at the Cu(1), Cu(2), O(1), O(2), O(3), and O(4) sites, as well as NMR and inelastic neutron scattering data on the crystal electric field at the Tm ions. Zh. éksp. Teor. Fiz. 111, 144–157 (January 1997)     

Phonons in red HgI2

A critical analysis of existing experimental and theoretical information on the lattice dynamics of the layered crystal α-HgI₂ is performed. It is shown that a satisfactory understanding of the character of the interatomic interaction and characteristic features of the phonon spectrum of this material can be obtained in a simple phenomenological model with eight parameters, assuming that E _g/B_1g degeneracy of the 29 cm⁻¹ Raman line is of a two-phonon nature. Fiz. Tverd. Tela (St. Petersburg) 40, 537–541 (March 1998)     

Inelastic scattering of phonons by quadrupole defects with internal degrees of freedom

We solve the quantum mechanical problem of the inelastic scattering of phonons by a quadrupole defect in a crystal lattice for the case of solid parahydrogen whose matrix contains pair complexes of H₂ orthomolecules. By employing the pseudospin approximation for the operator of the energy of quadrupole-quadrupole interaction of the molecules in an orthopair we derive an effective Hamiltonian that describes the interaction of phonons with a pair quadrupole orthodefect in the lattice. We set up the scattering matrix and calculate the effective phonon relaxation time τ(ω, T) as a function of the frequency ω and the crystal temperature T. We also find that a pair quadrupole defect, which has a complicated system of levels, can be replaced by an effective two-level system with temperature-dependent parameters. The fact that a pair quadrupole orthocluster has internal degrees of freedom results in a resonant scattering peak near a certain critical temperature T ₀. Our estimates for H₂ yield T ₀≃ 6–7 K. Finally, we discuss the contribution of this mechanism to the low-temperature thermal conductivity of solid hydrogen. Zh. éksp. Teor. Fiz. 114, 555–569 (August 1998)     

Effect of the degree of ordering of structural vacancies on the fine structure of the valence-band top in cubic boron nitride

The electronic energy structure of the defect system of c-BN_x with ZnS-type structure is calculated in the multiple-scattering theory by the local coherent potential method. The cluster version of the MT approximation is used to calculate the crystal potential. The effect of the relaxation of the crystal lattice on the electronic structure of nonstoichiometric boron nitride c-BN_0.75 is studied and a comparison is made with the electronic energy structure of c-BN in the same approximation. Fiz. Tverd. Tela (St. Petersburg) 39, 1064–1065 (June 1997)     

Determining orientation relationships for the <Emphasis Type="Italic">B</Emphasis>2 → <Emphasis Type="Italic">B</Emphasis>19′ transformation in single crystal titanium nickelide according to the texture of <Emphasis Type="Italic">B</Emphasis>19′ martensite

A precision method for determining orientation relationships upon the B2 → B19′ transformation in titanium nickelide has been developed. The method is based on analyzing the martensite texture formed in the initial high-temperature B2 phase of a single crystal having a high degree of perfection. The orientation relationships between the B19′ lattice and the initial B2 lattice of the TiNi single crystal were established from the B19′ martensite texture formed in single crystals of titanium nickelide upon the B2 → B19′ transformation and from measurements of the lattice parameters. Crystal mechanism of B19′ martensite was proposed which included the shear in the (21-1) B2 plane in the direction [−11-1] B2 by 10°. Such a shear system is typical of the bcc crystals at deformation by twinning. Absolute shear values are in a ratio of 1:4 for B2 → B19′ transformation and for twinning, respectively. Martensite deformation at an invariant lattice is accompanied by small rotations of martensite crystals (±1.6°), that increases the quantity of martensite orientations from 12 to 24.     

Raman scattering in a near-surface n-GaAs layer implanted with boron ions

Structure in the Raman scattering spectra of near-surface n-GaAs layers (n=2×10¹⁸ cm⁻³) implanted with 100 keV B⁺ ions in the dose range 3.1×10¹¹–1.2×10¹⁴ cm⁻² is investigated. The qualitative and quantitative data on the carrier density and mobility and on the degree of amorphization of the crystal lattice and the parameters of the nanocrystalline phase as a result of ion implantation are obtained using a method proposed for analyzing room-temperature Raman spectra. Fiz. Tverd. Tela (St. Petersburg) 41, 1495–1498 (August 1999)     

Influence of quantum fluctuations on the Néel temperature of a dilute two-dimensional anisotropic antiferromagnet

A quantum Monte Carlo procedure is used to calculate the energy, sublattice magnetization, Néel temperature, and the slopes of the S=[1/T _N(x=0)]dT _N(x)/dx curves as functions of the hole concentration and the exchange anisotropy Δ=1−J _x,y/J _z in the Heisenberg model with anisotropic negative interactions between nearest neighbors in a square lattice with dilution among the lattice sites. The slope diverges in the limit Δ→0: S∼ln(6.5/Δ). Fiz. Tverd. Tela (St. Petersburg) 39, 898–900 (May 1997)     

Determining the lattice parameter and the single-electron model potential of the compound CdS by means of the soft x-ray absorption spectra

The method of determining the structure parameters of multiatomic systems, using the spectra of soft x rays (XANES) proposed earlier, is extended to the case of nonmetallic crystal bodies. This method is used to determine the lattice parameter and the empirical muffin-tin potential from the positions of maxima of single-electron origin in the sulfur K spectrum in the compound CdS. Fiz. Tverd. Tela (St. Petersburg) 40, 2168–2171 (December 1998)