Microstructure and microwave permeability of FeCo thin films with Co underlayer

Microstructure, static magnetic properties and microwave permeability of sputtered FeCo films were examined. Fe₆₀Co₄₀ films (100 nm in thickness) deposited on glass substrates exhibited in-plane isotropy and a large coercivity of 161.1 Oe. When same thickness films were deposited on 2.5 nm Co underlayer, well-defined in-plane anisotropy was formed with an anisotropy field of 65 Oe. The sample had a static initial permeability of about 285, maximum imaginary permeability of 1255 and ferromagnetic resonance frequency of 2.71 GHz. Cross-sectional TEM image revealed that the Co underlayer had induced a columnar grain structure with grain diameter of 10 nm in the FeCo films. In comparison, FeCo films without Co underlayer showed larger grains of 70 nm in diameter with fewer distinct vertical grain boundaries. In addition, the Co underlayer changed the preferred orientation of the FeCo from (1 0 0) to (1 1 0). The improvement in soft magnetic properties and microwave behavior originates from the modification of the film microstructure, which can be well understood by the random anisotropy theory.     

TiN underlayer and overlayer for TbFeCo perpendicular magnetic recording media

TiN thin film is prepared by DC reactive sputtering in Ar+N₂ atmosphere and its suitability as underlayer and overlayer for TbFeCo perpendicular recording media as well as its effect on the magnetic properties of the latter have been studied. Only 5 nm TiN overlayer and 20 nm under layer can successfully protect the TbFeCo film from oxidation. Initially the coercivity is increased sharply from about 2 to 6 kOe for an increase of underlayer thickness to 60 nm then the increasing rate of coercivity becomes very slow. The saturation magnetization remains almost constant with the underlayer thickness. The remanent squareness ratio remains constant at 1.0 with the underlayer thickness up to 60 nm then decreases.     

Effects of Cr underlayer and Pt buffer layer on the interfacial structure and magnetic characteristics of sputtered FePt films

This work develops a new method for growing L1₀ FePt(0 0 1) thin film on a Pt/Cr bilayer using an amorphous glass substrate. Semi-coherent epitaxial growth was initiated from the Cr(0 0 2) underlayer, continued through the Pt(0 0 1) buffer layer, and extended into the L1₀ FePt(0 0 1) magnetic layer. The squareness of the L1₀ FePt film in the presence of both a Cr underlayer and a Pt buffer layer was close to unity as the magnetic field was applied perpendicular to the film plane. The single L1₀ FePt(1 1 1) orientation was observed in the absence of a Cr underlayer. When a Cr underlayer is inserted, the preferred orientation switched from L1₀ FePt(1 1 1) to L1₀ FePt(0 0 1) and the magnetic film exhibited perpendicular magnetic anisotropy. However, in the absence of an Pt intermediate layer, the Cr atoms diffused directly into the FePt magnetic layer and prevented the formation of the L1₀ FePt(0 0 1) preferred orientation. When a Pt buffer layer was introduced between the FePt and Cr underlayer, the L1₀ FePt(0 0 1) peak appeared. The thickness of the Pt buffer layer also substantially affected the magnetic properties and atomic arrangement at the FePt/Pt and Pt/Cr interfaces.     

Looking back at perpendicular magnetic recording R&D in NEC

This paper reports perpendicular magnetic recording (PMR) circumstances and the results based on the reference published by NEC. The PMR flexible disks using Co-Cr-Ta films were investigated. Pass wear durability of Co-Cr-Ta film strongly depends on the base film surface roughness and Young's modulus values of Co-Cr-Ta films. Pass wear durability, more than 10 million passes, was confirmed under a high temperature (60 °C) and a high humidity (80% RH) condition, as well as a low temperature (5 °C) condition. The read/write characteristics for double-layered PMR media were examined by using a combination of a single-pole-type (SPT) write head and a magnetoresistive (MR) read head, and a conventional merged ring type inductive (ID) write head/MR read head. By differential equalization of the reproduced voltage, the bit error rate less than 10⁻⁶ at 3 Gb/in.² was obtained for the SPT/MR head combination. The antenna effect for PMR realization was analyzed using the merged ring type ID/MR head. In order to increase the magnetic circuit resistance from the ID head pole to the soft underlayer, we developed the sendust (FeAlSi) soft underlayer with low magnetic permeability. We confirmed that the recorded signal has better stability under the ID/MR head-loaded condition than the SPT head-loaded condition. These results show that there are the head and media solutions to realize PMR. We had confidence that we could use the basic structure of the commercial ID/MR head for the PMR head.     

Self-assembled strontium ferrite dot array on Au underlayer

Strontium ferrite (SrM) thin films were deposited on thermally oxidized silicon wafer with Au underlayer. Gold underlayers were prepared at various substrate temperatures by using a magnetron sputtering system. C-axis oriented SrM perpendicular films and preferred (1 1 1) orientation of underlayer have confirmed by X-ray diffraction patterns. The intensity of (1 1 1) diffraction line for Au and that of (0 0 l) diffraction line for strontium ferrite decrease with increase in substrate temperature (T_u) The maximum coercivity and remanent squareness ratio in perpendicular direction, at T_u of 500 °C, are 5.4 kOe and 0.68, respectively. The strength of the intergranular interaction of SrM magnetic particles is described by the parameter Δm. The SrM/Au films prepared at T_u above 100 °C have smaller Δm peak values than that for SrM/Au films prepared at T_u of room temperature. This behavior is related to low magnetostatic coupling between the magnetic particles separated by the non-magnetic amorphous phase.     

Improvement of magnetic properties and read/write characteristics in SmCo5 perpendicular thin films

An SmCo₅ alloy is a promising candidate for ultra-high density magnetic recording media because of its strong uniaxial magnetocrystalline anisotropy, whose constant, K_u, is more than 1.1×10⁸ erg/cm³. Recently, we successfully obtained high perpendicular magnetic anisotropy for a sputter-deposited SmCo₅ thin film by introducing a Cu/Ti dual underlayer. However, it is necessary to improve magnetic properties and read/write (R/W) characteristics for applying SmCo₅ thin films to perpendicular magnetic recording media. In this study, we focused on reduction of magnetic domain size and change of a magnetization reversal process of SmCo₅ perpendicular magnetic thin films by introducing carbon (C) atoms into the constituent Cu underlayer. The magnetic domain size became small and the ratio of coercivity (H_c) against magnetic anisotropy (H_k) which is an index of the magnetization reversal process was increased by adding C atoms. We also evaluated the R/W characteristics of SmCo₅ double-layered media including C atoms. The medium noise was decreased and signal-to-noise ratio increased by introducing the C. The addition of C into the Cu underlayer is effective for changing the magnetization reversal process, reducing medium noise and increasing SNR.     

Textured growth of CoFe for soft underlayers in CoCrPt:SiO2 perpendicular magnetic recording media

CoFe alloy thin films were studied with the intention of potential use as a soft underlayer (SUL) for Co-based perpendicular recording media. The effect of composition and the effects of seedlayers on the formation of crystalline phase and crystallographic texture and the magnetic properties were investigated. Films deposited on Ta/Pd seedlayer were found to have a good FCC(1 1 1) texture than those deposited on glass substrates or on Ta seedlayers. The magnetic properties were also better when deposited on Ta/Pd seedlayers. On these seedlayers, Fe concentration of 15 at% was found to be suitable for the formation of FCC phase. Disks were prepared with CoFe SULs. The noise of CoFe SUL is one of the challenges to be solved.     

Sm–Co films for high-density magnetic recording media

In this experiment, Cr–Cu thin film was used as an underlayer for Sm–Co film. The magnetic properties and crystal structure of Sm–Co films prepared onto this kind of underlayer have been studied. Grain size and surface roughness have been reduced with the introduce of Cr. The Cr addition into the Cu underlayer also improves the c-axis orientation of Sm–Co films. As a result, films with squareness ratio as high as 0.95 and perpendicular coercivity as high as 12.3 kOe have been prepared.     

Effect of Co underlayer on soft magnetic properties and microstructure of FeCo thin films

High saturation magnetization soft magnetic FeCo (=Fe₆₅Co₃₅) films were prepared using a thin Co underlayer. The FeCo/Co films exhibited a well-defined in-plane uniaxial anisotropy with easy axis coercivity (H_ce) of 10 Oe and hard axis coercivity (H_ch) of 3 Oe, and a half reduction of H_c with H_ce=4.8 Oe and H_ch=1.0 Oe was obtained when the composition was adjusted to 25 at% Co. The effective permeability of the films remains flat around 250 to 800 MHz. The saturation magnetostriction was 5.2×10⁻⁵ and the intrinsic stress was 0.8 GPa in FeCo single layer, both were slightly reduced by Co underlayer. The Co underlayer changed the preferred orientation of the FeCo films from (2 0 0) to (1 1 0) but more significantly, reduced the average grain size from ∼74 to ∼8.2 nm. It also reduced the surface roughness from 2.351 to 0.751 nm. The initial stage and interface diffusion properties were examined by TEM and XPS.     

Strongly in-plane magnetized FePt thin film on ultrathin Fe underlayer

The effect of ultrathin Fe underlayer on the strong in-plane magnetization of FePt magnetic thin film was investigated. This FePt thin film could be attained using the ultrathin Fe underlayer with 1 nm thickness. The in-plane coercivity of FePt film with 20 nm thickness grown on ultrathin Fe underlayer was high up to 7400 Oe. However, its out-of-plane coercivity was extremely low to 350 Oe compared to those of FePt thin films in other conventional studies. This result indicates that FePt thin film was strongly in-plane magnetized by ultrathin Fe underlayer. The strong ordering phase transformation kinetics and the high texturing to in-plane direction of the FePt thin film by ultrathin Fe underlayer were confirmed by Kinetics Monte Carlo (KMC) simulation and XRD measurement result, respectively. It is also supposed that they are associated with the reduction of an interface free energy between the film and the substrate with an introduction of ultrathin underlayer.     

Soft magnetic properties of FeCo films with Co underlayer

Bilayered Fe₆₅Co₃₅ (=FeCo)/Co films were prepared by facing targets sputtering with 4πM_s∼24 kg. The soft magnetic properties of FeCo films were induced by a Co underlayer. H_c decreased rapidly when the Co underlayer was 2 nm or more. The films showed well-defined in-plane uniaxial anisotropy with the typical values of H_ce=10 Oe and H_ch=3 Oe, respectively. High frequency characteristics of the films show the films can work at 0.8 GHz with real permeability as high as 250.     

Effects of the Hf content on the microstructure and magnetic properties of Co-Hf-Ta thin films

Effects of the Hf content in Co-Hf-Ta thin films on the microstructure and magnetic properties were investigated in this study. It was found that appropriate Hf addition can effectively refine the Co grain size. Co grain sizes sharply decreased from 50 nm down to 2.3 nm with increasing the Hf content from 1.02 at.% to 2.81 at.%, leading to the reduced magneto-crystalline anisotropy. The Co-Hf-Ta thin films with small Co grains reveal low anisotropy field, low coercivity, and high resistivity. By optimizing the Hf content, the film with Hf concentration of 2.81 at.% exhibits excellent soft magnetic properties: high saturation magnetization (4πM_S ∼ 13.6 kG), and low coercivity (H_C ∼ 0.6 Oe). The effective permeability of the film reaches 800 and remains constant up to 1 GHz.     

Magnetic properties of strontium hexaferrite films prepared by pulsed laser deposition

The magnetic properties of strontium hexaferrite (SrFe₁₂O₁₉) films fabricated by pulsed laser deposition on the Si(100) substrate with Pt(111) underlayer have been studied as a function of film thickness (50–700 nm). X-ray diffraction patterns confirm that the films have c-axis perpendicular orientation. The coercivities in perpendicular direction are higher than those for in-plane direction which indicates the films have perpendicular magnetic anisotropy. The coercivity was found to decrease with increasing of thickness, due to the increasing of the grain size and relaxation in lattice strain. The 200 nm thick film exhibits hexagonal shape grains of 150 nm and optimum magnetic properties of M_s=298 emu/cm³ and H_c=2540 Oe.     

Investigation of induced parallel magnetic anisotropy at low deposition temperature in Ba-hexaferrites thin films

In this paper we present the effect of low substrate temperature on structural, morphological, magnetic and optical properties of Ba-hexaferrite thin films. Films were deposited on single crystal Silicon (1 0 0) substrate employing the Pulsed Laser Deposition (PLD) technique. The structural, morphological, magnetic and optical properties are found to be strongly dependent on substrate temperature. The low substrate temperatures (room temperature to 200 °C) restrict the formation of larger grains. For the higher substrate temperature i.e., 400 °C, the grain size of the deposited thin film are much larger. The film grown at low substrate temperature do not show any anisotropy. As the substrate temperature is increased, the easy axis of the films alinged itself in the direction parallel to the film plane whereas the hard axis remained in the perpendicular direction. The higher substrate temperature caused the uniaxial magnetic anisotropy, which is very important in magnetic recording devices. The saturation magnetization and optical band gap energy values of 62 emu/cc and 1.75 eV, respectively, were achieved for the film of thickness 500 nm deposited at 400 °C. Higher values of coercivity, squareness and films thickness are associated with the growth of larger grains at higher substrate temperature.     

Perpendicular magnetic recording technology at 230 Gbit/in

A perpendicular recording system that allows areal densities beyond 200 Gbit/in² has been designed and tested to investigate the major challenges in perpendicular magnetic recording. The integrated write/read head has a trailing shield to improve the write head field gradient and a conventional CIP–GMR reader. The medium is a low-noise CoPtCr-based oxide medium with a CoTaZr soft underlayer. On track byte error rates at ∼ 50 Mb/s are better than 10⁻⁴ at ∼1000 kbpi. Using a 15% off-track criterion at 10⁻² byte error rate, track densities between 200–240 ktpi are realized, yielding areal densities of 210–233 Gbit/in². High-resolution magnetic force microscopy (hrMFM) has been employed to investigate the write characteristics of these heads with improved cross-track resolution. Using a quantitative analysis method, many parameters, such as transition curvature and transition width, are estimated from the hrMFM image. Significant transition curvature is found, which increases the width of the read head response to a transition, T₅₀, by 2–3 nm.These results give insights into the recording physics of perpendicular recording and in particular point out improvements required for achieving even higher areal densities.     

Amorphous Ni-Al underlayer-accelerated L10 ordering transition of FePt thin films

In the present study, we succeeded in accelerating the L1₀ ordering transition of FePt thin films by employing amorphous Ni-Al as underlayers. The coercivity H_c = 5 kOe and ordering parameter S = 0.67 of FePt thin films deposited on a Ni-Al underlayer with a thickness of ∼5 nm after 380 °C annealing for 30 min are significantly higher than those H_c = 0.4 kOe and S = 0.35 of the films without the Ni-Al underlayer. The L1₀ ordering process of and the coercivity of FePt thin films can be significantly tuned by varying the thickness of the Ni-Al underlayer.     

Preparation of strontium hexaferrite film by pulsed laser deposition with in situ heating and post annealing

Strontium hexaferrite (SrFe₁₂O₁₉) films have been fabricated by pulsed laser deposition on Si(1 0 0) substrate with Pt(1 1 1) underlayer through in situ and post annealing heat treatments. C-axis perpendicular oriented SrFe₁₂O₁₉ films have been confirmed by X-ray diffraction patterns for both of the in situ heated and post annealed films. The cluster-like single domain structures are recognized by magnetic force microscopy. Higher coercivity in perpendicular direction than that for the in-plane direction shows that the films have perpendicular magnetic anisotropy. High perpendicular coercivity, around 3.8 kOe, has been achieved after post annealing at 500 °C. Higher coercivity of the post annealed SrFe₁₂O₁₉ films was found to be related to nanosized grain of about 50–80 nm.     

A new TiW seed layer for SmCo5 films with perpendicular magnetic anisotropy

A new seed layer TiW is proposed for SmCo₅ films with perpendicular magnetic anisotropy. The influence of a TiW seed layer on the microstructure and the surface morphology of Cu underlayer are studied. The grain size and surface roughness dependence of Cu underlayer on the thickness and the annealing of the TiW seed layer are also investigated. The improvement in the perpendicular magnetic properties of SmCo₅ film from the TiW seed layer is approved. The results show that a 5 nm Ti₃W₇ seed layer improves the microstructure and surface morphology of Cu underlayer, and significantly improves the perpendicular magnetic properties of SmCo₅ film. The diffusion barrier and a high melting point of the TiW seed layer are regarded as the physical mechanism of the improvement for SmCo₅ film with perpendicular magnetic anisotropy.     

As-grown preparation of FePt-ordered alloy thin films from Pt/Fe bi-layered structure

A novel method to fabricate FePt-ordered alloy thin films with (0 0 1) preferential orientation from Pt/Fe bi-layered films has been developed. It is able to omit post-annealing with a furnace, and the whole process can be conducted in a chamber without exposing samples to air. In this method, the inter-diffusion and the hetero-epitaxial relation between Fe and Pt are key factors to attain an FePt-ordered alloy thin film with (0 0 1) preferential orientation. An FePt-ordered alloy thin film with (0 0 1) preferential orientation fabricated from Pt[3 nm]/Fe[3 nm] bi-layer employing this method exhibited a relatively large coercivity of 5.6 kOe and high squareness ratio of 0.94 on perpendicular magnetization property. This novel method has a potential to fabricate FePt-based perpendicular magnetic recording media more easily than several conventional methods.     

Thin film stress measurement by instrumented optical fibre displacement sensor

Residual stress can adversely affect the mechanical, electronic, optical and magnetic properties of thin films. This work describes a simple stress measurement instrument based on the bending beam method together with a sensitive non-contact fibre optical displacement sensor. The fibre optical displacement sensor is interfaced to a computer and a Labview programme enables film stress to be determined from changes in the radius of curvature of the film-substrate system. The stress measurement instrument was tested for two different kinds of thin film, hard amorphous carbon nitride (CN) and soft copper (Cu) films on silicon substrates deposited by RF magnetron sputtering. Residual stress developed in 500 nm thick CN thin films deposited at substrate temperatures in the range 50-550 °C was examined and it was found that stress in CN films decreased from 0.83 to 0.44 GPa compressive with increase of substrate temperature. Residual stress was found to be tensile (121 MPa) for Cu films of thickness 1500 nm deposited at room temperature.