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1.
The microstructure and magnetic properties have been investigated systematically for Sn1−xMnxO2 polycrystalline powder samples with x=0.02-0.08 synthesized by a solid-state reaction method. X-ray diffraction revealed that all samples are pure rutile-type tetragonal phase and the cell parameters a and c decrease monotonously with the increase in Mn content, which indicated that Mn ions substitute into the lattice of SnO2. Magnetic measurements revealed that all samples exhibit room temperature ferromagnetism. Furthermore, magnetic investigations demonstrate that magnetic properties strongly depend on doping content, x. The average magnetic moment per Mn atom decreases with increase in the Mn content, because antiferromagnetic super-exchange interaction takes place within the neighbor Mn3+ ions through O2− ions for the samples with higher Mn doping. Our results indicate that the ferromagnetic property is intrinsic to the SnO2 system and is not a result of any secondary magnetic phase or cluster formation.  相似文献   

2.
In this paper, we have investigated Mn-doped SnO2 powder samples prepared by solid-state reaction method. X-ray diffraction showed a single phase polycrystalline rutile structure. The atomic content of Mn ranged from ∼0.8 to 5 at%. Room temperature M-H loops showed a ferromagnetic behavior for all samples. The ferromagnetic Sn0.987Mn0.013O2 showed a coercivity Hc=545 Oe, which is among the highest reported for dilute magnetic semiconductors. The magnetic moment per Mn atom was estimated to be about 2.54 μB of the Sn0.9921Mn0.0079O2 sample. The average magnetic moment per Mn atom sharply decreases with increasing Mn content, while the effective fraction of the Mn ions contributing to the magnetization decreases. The magnetic properties of the Sn1−xMnxO2 are discussed based on the competition between the antiferromagnetic superexchange coupling and the F-center exchange coupling mechanism, in which both oxygen vacancies and magnetic ions are involved.  相似文献   

3.
Mn-doped ZnO samples having composition Zn1−xMnxO (x=0.02, 0.04 and 0.05) were synthesized by solid state reaction technique with varying concentration of Mn from 0.02 to 0.05. Evidence of room temperature ferromagnetism was observed only in the composition Zn0.98Mn0.02O sintered at 500 °C. Our XRD pattern confirms the presence of Mn3O4 impurity phase in all the Zn1−xMnxO samples with the exception of Zn0.98Mn0.02O. We emphasize that the appearance of Mn3O4 phase in the system forbids the exchange type of interaction between the Mn ions and suppresses the ferromagnetism in all the Mn over-doped Zn1−xMnxO (x>0.02) system. SEM microstructure study also supports the interruption of exchange type of interaction inside the system with the increase in Mn concentration in the sample. Interestingly, for this particular composition, Zn0.98Mn0.02O sintered at 500 °C, glassy ferromagnetism type of transition is observed at low temperature. This type of transition is attributed to the formation of the oxides of Mn clusters at low temperature.  相似文献   

4.
用溶剂热合成法在160oC制备出Zn1-xMnxO纳米棒和Zn1-2xMnxLixO纳米颗粒. XRD和拉曼测试结果表明Mn离子已很好地掺入ZnO母体中. M-H图中未观察到磁回滞,ESR谱中的精细结构说明掺杂的Mn离子间没有铁磁相互作用. 共掺Li仅仅改变了产物的形貌,并不能改变其磁学性质.  相似文献   

5.
Zn1−xNixO (x=0-0.25) hierarchical microspheres were synthesized via a solvothermal process in ethylene glycol. The magnetic microspheres were characterized by X-ray powder diffraction, field-emission scanning electron microscopy, energy-dispersive X-ray spectra, X-ray photoelectron spectroscopy, room-temperature photoluminescence spectra, and vibrating sample magnetometer. The as-prepared samples take on a well-defined spherical architecture following the processes of spontaneous aggregation and localized Ostwald ripening. Dependence of the magnetization and morphology on Ni2+ content was observed. Magnetic hysteresis loops reveal that the Ni-doped ZnO microspheres exhibit ferromagnetic loops at room temperature.  相似文献   

6.
ZnCoO稀磁半导体的室温磁性   总被引:1,自引:0,他引:1       下载免费PDF全文
采用固相反应法,将ZnO和Co2O3粉末按不同的成分配比混合,制备了稀磁半导体Zn1-xCoxO (x=0.02,0.06,0.10)材料.并使用H2气氛退火技术对样品进行了处理,得到了具有室温铁磁性的掺Co氧化锌稀磁半导体.利用全自动X射线衍射仪、X射线光电子能谱仪、高分辨透射电子显微镜和超导量子干涉器件磁强计对样品的结构、晶粒的尺寸、微观形貌以及磁性等进行了测量和标度. 关键词: 稀磁半导体 氧化锌 掺杂 固相反应法  相似文献   

7.
Structural and magnetic properties were studied in powder form of Sn1−xCrxO2 with x=0.01, 0.02, 0.03, 0.04 and 0.05 in nominal composition. The structural parameters were obtained at room temperature by the Rietveld refinement of the x-ray powder diffraction profiles. Samples of x=0 to 0.04 are tetragonal phase with a space group P42/mnm. The lattice parameters indicate three-step changes with increasing Cr content. The distortion of the metal-oxygen octahedral unit occurs. The substitution of Cr ions on the Sn sites shortens the lattice parameters and the octahedral unit becomes elongated with a displacement of an apical oxygen from x=0 to x=0.02. The incorporation of Cr over x=0.02 leads to the recovery of the length of lattice parameters together with a relaxation of the octahedral unit. This result indicates a possible interstitial occupation of Cr ions from x=0.03 to x=0.04. The Cr doping reaches a saturation limit at x=0.05 with a trace of the excess Cr oxides in the x-ray study. A room temperature ferromagnetism appears in the sample with x=0.01 and becomes remarkable in one with x=0.02. The magnetization decreases with increasing the Cr doping with the amount x>0.02. Thus, the appearance of ferromagnetism highly correlated with the oxygen displacements at the apical position of the octahedral in the Sn1−xCrxO2 system at room temperature. The critical oxygen displacement in the elongated octahedral at around x=0.02 may encourage the vacancy of the apical oxygen and eventually leads to appearance of a ferromagnetism based on an F-center exchange with a micro- and/or nano-structural transition. The observed ferromagnetism is highly correlated with the averaged structural change appeared in the x-ray powder diffraction.  相似文献   

8.
Nanocrystalline Zn1−xMnxO(x=0−0.1) powders are prepared by polymeric precursor method and their structural and magnetic properties carefully studied. X-ray diffraction studies and Raman spectroscopy reveal that Mn2+ ions have substituted the Zn2+ ion without changing the würtzite structure of pristine ZnO up to Mn concentrations x≤0.05. The presence of a secondary phase, related to the solubility of Mn in ZnO is evident for higher Mn-doping concentrations. The negative value obtained for the Curie–Weiss temperature indicates that the interactions between the Mn ions are predominantly antiferromagnetic. Thus, no bulk ferromagnetism is evident in any of the studied samples.  相似文献   

9.
We have investigated the structural, electronic and magnetic properties of the diluted magnetic semiconductor (DMS) Cd1−xMnxTe (for x=0.75 and 1.0) in the zinc blende (B3) phase by employing the ab-initio method. Calculations were performed by using the full potential linearized augmented plane wave plus local orbitals (FP-L/APW+lo) method within the frame work of spin-polarized density functional theory (SP-DFT). The electronic exchange-correlation energy is described by generalized gradient approximation (GGA). We have calculated the lattice parameters, bulk modulii and the first pressure derivatives of the bulk modulii, spin-polarized band structures, and total and local densities of states. We estimated the spin-exchange splitting energies Δx(d) and Δx(pd) produced by the Mn3d states, and we found that the effective potential for the minority spin is more attractive than that of the majority spin. We determine the s-d exchange constant N0α (conduction band) and p-d exchange constant N0β (valence band) and these somewhat agree with a typical magneto-optical experiment. The value of calculated magnetic moment per Mn impurity atom is found to be 4.08 μB for Cd0.25Mn0.75Te and 4.09 μB for Cd0.0Mn1.0Te. Moreover, we found that p-d hybridization reduces the local magnetic moment of Mn from its free space charge value of 5.0 μB and produces small local magnetic moments on the nonmagnetic Cd and Te sites.  相似文献   

10.
We investigated the nanotribological properties of Zn1−xMnxO epilayers (0 ≤ x ≤ 0.16) grown by molecular beam epitaxy (MBE) on sapphire substrates. The surface roughness and friction coefficient (μ) were analyzed by means of atomic force microscopy (AFM) and hysitron triboscope nanoindenter techniques.The nanoscratch system gave the μ value of the films ranging from 0.17 to 0.07 and the penetration depth value ranging 294-200 nm when the Mn content was increased from x = 0 to 0.16. The results strongly indicate that the scratch wear depth under constant load shows that higher Mn content leads to Zn1−xMnxO epilayers with higher shear resistance, which enhances the Mn-O bond. These findings reveal that the role of Mn content on the growth of Zn1−xMnxO epilayers can be identified by their nanotribological behavior.  相似文献   

11.
In this paper, we report theoretical investigations of structural, electronic and magnetic properties of ordered dilute ferromagnetic semiconductors Cd1−xFexS with x=0.25, 0.5 and 0.75 in zinc blende (B3) phase using all-electron full-potential linear muffin tin orbital (FP-LMTO) calculations within the density functional theory and the generalized gradient approximation. The analysis of band structures, density of states, total energy, exchange interactions and magnetic moments reveals that both the alloys may exhibit a half-metallic ferromagnetism character. The value of calculated magnetic moment per Fe impurity atom is found to be 4 μB. Moreover, we found that p-d hybridization reduces the local magnetic moment of Fe from its free space charge value of 4 μB and produces small local magnetic moments on Cd and S sites.  相似文献   

12.
Crystal Zn1−xMnxO magnetic semiconductors have been obtained by using a hydrothermal method for the first time at temperature of 703 K with substituent fraction ranging from x=0 to 0.04. X-ray diffraction and optical absorption measurements provide evidence for the locating at Zn site of Mn ion in ZnO crystals. The non-monotonic variation of band gap indicates the short-ranged interactions of sp-d electrons. However, no evidence of ferromagnetism is found in these systems down to T=2 K. The magnetization is found to be contributed from both free spins and spins associated with antiferromagnetic clusters. The antiferromagnetism is confirmed by fitting a Curie-Weiss function.  相似文献   

13.
X-ray photoelectron (XPS) studies of core-levels in Sn1−xMnxTe (x < 0.1) semimagnetic semiconductors have been performed. The spectra were acquired under UHV conditions from the clean (as-cleaved or in-situ scraped) crystal surface. The single-phase NaCl structure of the alloys studied was verified by X-ray diffraction (XRD). The structure of Sn 3d and Te 3d core-levels in SnMnTe was found fully consistent with that of SnTe. Remarkable qualitative similarity of the Mn 2p spectrum of Sn1−xMnxTe (x = 0.09) with the case of zinc-blende MnTe [R.J. Iwanowski, M.H. Heinonen, E. Janik, Chem. Phys. Lett. 387 (2004) 110] has been shown: (1) the same binding energies (BEs) of the main contributions to the Mn 2p3/2 line, related to Mn2+ state of the bulk MnTe bond; (2) occurrence of low BE component in the Mn 2p spectrum, indicative of clean-surface species containing reduced-valence Mn ions (i.e. Mnq+, where 0 < q < 2); (3) strong satellites of the 2p3/2 (Mn2+ related) parent lines. In SnMnTe, the highest intensity ratio of the satellite to main peak (ever reported for Mn 2p photoelectron spectrum) was revealed; this was interpreted in terms of the so-called charge-transfer model.  相似文献   

14.
BiFeO3/Zn1−xMnxO (x = 0-0.08) bilayered thin films were deposited on the SrRuO3/Pt/TiO2/SiO2/Si(1 0 0) substrates by radio frequency sputtering. A highly (1 1 0) orientation was induced for BiFeO3/Zn1−xMnxO. BiFeO3/Zn1−xMnxO thin films demonstrate diode-like and resistive hysteresis behavior. A remanent polarization in the range of 2Pr ∼ 121.0-130.6 μC/cm2 was measured for BiFeO3/Zn1−xMnxO. BiFeO3/Zn1−xMnxO (x = 0.04) bilayer exhibits a highest Ms value of 15.2 emu/cm3, owing to the presence of the magnetic Zn0.96Mn0.04O layer with an enhanced Ms value.  相似文献   

15.
In this work, GaMnAs alloy materials were deposited on 7059 Corning glass and GaAs (1 0 0) substrates via RF magnetron sputtering technique. A concentration of Mn about 0.28 was obtained by Energy Dispersive X-ray spectroscopy. The substrate temperature was changed from 440 to 520 °C and layer thicknesses between 172 and 514 nm were obtained. Characterization by atomic force microscopy and X-ray diffraction were performed to determinate surface morphology and crystal structure, respectively. From transmittance spectral measurements we were able to determine optical constants: band gap energy (Eg), absorption coefficient (α), and refraction index (n). A correlation between morphological properties and substrate type was also studied. Diluted magnetic semiconductors like GaMnAs are considered among promising materials for the development of new spin-electronic devices.  相似文献   

16.
We report on the ferromagnetic characteristics of Zn1−xMnxO films (x=0.1-0.3) prepared by the sol-gel method on silicon substrates using transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), X-ray diffractometry (XRD) and superconducting quantum interference device (SQUID) magnetometry at various temperatures. Magnetic measurement show that the Curie temperature (TC) and the coercive field (HC) were ∼39 K and ∼2100 Oe for the film of x=0.2, respectively. EDS and TEM measurements indicate that Mn content at the interface is significantly higher than that at the center of the Zn0.8Mn0.2O film showing the ratio, Zn:Mn:O≅1:12:15. This experimental evidence suggests that ferromagnetic precipitates containing manganese oxide may be responsible for the observed ferromagnetic behavior of the film.  相似文献   

17.
This Letter reports on structural and photoluminescence properties of Zn1 − xMnxO nanocrystalline powders, which were synthesized by using oxalate precursor decomposition method. From the XRD features, we have noticed that all samples exhibit wurtzite crystal structure. The origin of photoluminescence properties of Mn doped and undoped ZnO have been discussed.  相似文献   

18.
(In1−xFex)2O3 (x = 0.02, 0.05, 0.2) powders were prepared by a solid state reaction method and a vacuum annealing process. A systematic study was done on the structural and magnetic properties of (In1−xFex)2O3 powders as a function of Fe concentration and annealing temperature. The X-ray diffraction and high-resolution transmission electron microscopy results confirmed that there were not any Fe or Fe oxide secondary phases in vacuum-annealed (In1−xFex)2O3 samples and the Fe element was incorporated into the indium oxide lattice by substituting the position of indium atoms. The X-ray photoelectron spectroscopy revealed that both Fe2+ and Fe3+ ions existed in the samples. Magnetic measurements indicated that all samples were ferromagnetic with the magnetic moment of 0.49-1.73 μB/Fe and the Curie temperature around 783 K. The appearance of ferromagnetism was attributed to the ferromagnetic coupling of Fe2+ and Fe3+ ions via an electron trapped in a bridging oxygen vacancy.  相似文献   

19.
The electronic structure of polycrystalline ferromagnetic Zn1−xCoxO (0.05≤x≤0.15) and the oxidation state of Co in it, have been investigated. The Co-doped polycrystalline samples are synthesized by a combustion method and are ferromagnetic at room temperature. XPS and optical absorption studies show evidence for Co2+ ions in the tetrahedral symmetry, indicating substitution of Co2+ in the ZnO lattice. However, powder XRD and electron diffraction data show the presence of Co metal in the samples. This give evidence to the fact that some Co2+ ion are incorporated in the ZnO lattice which gives changes in the electronic structure whereas ferromagnetism comes from the Co metal impurities present in the samples.  相似文献   

20.
We report on the analysis of optical transmittance spectra and the resulting ferromagnetic characteristics of sputtered Zn1−xCoxO films. Zn1−xCoxO films were prepared on (0001)-oriented Al2O3 substrates by the radio-frequency (rf) magnetron co-sputtering method. The XRD results showed that the crystallinity of films was properly maintained up to x=0.30 and no second phase peaks were detected up to x=0.40. The transmittance spectra showed both the increase of the absorption band intensity and the red shift of the absorption peak as well as the band edge with increasing x. We have proved experimentally that these changes depend on Co concentration. These optical properties suggest that sp-d exchange interactions and typical d-d transitions become activated with increasing x, which leads to the enhancement of ferromagnetic properties in Zn1−xCoxO films as shown in the AGM results. Therefore, it is concluded that the ferromagnetism derives from the substitution of Co2+ for Zn2+ without changing the wurtzite structure.  相似文献   

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