Investigation of energy band gap and optical properties of cubic CdS epilayers

High quality cubic CdS epilayers were grown on GaAs (1 0 0) substrates by the hot-wall epitaxy method. The crystal structure of the grown epilayers was confirmed to be the cubic structure by X-ray diffraction patterns. The optical properties of the epilayers were investigated in a wide photon energy range between 2.0 and 8.5 eV using spectroscopic ellipsometry (SE) and were studied in the transmittance spectra at a wavelength range of 400-700 nm at room temperature. The data obtained by SE were analyzed to find the critical points of the pseudodielectric function spectra, 〈?(E)〉 = 〈?₁(E)〉 + i〈?₂(E)〉, such as E₀, E₁, E₂, E^′₀, and E^′₁ structures. In addition, the optical properties related to the pseudodielectric function of CdS, such as the absorption coefficient α(E), were investigated. All the critical point structures were observed, for the first time, at 300 K by ellipsometric measurements for the cubic CdS epilayers. Also, the energy band gap was determined by the transmittance spectra of the free-standing film, and the results were compared with the E₀ structure obtained by SE measurement.     

Spectroscopic properties of Yb ions in La2(WO4)3 crystal

Yb³⁺-doped La₂(WO₄)₃ single crystals were grown by the Czochralski technique. Absorption and fluorescence spectra of the crystal were recorded at the room temperature. The stimulated emission cross-sections of Yb³⁺ ions were calculated using the reciprocity method and Fuchtbauer-Ladenburg formula, respectively. The fluorescence decay curves of ²F_5/2 manifold of Yb³⁺ ions were recorded at room temperature for both crystal and powder samples. The effect of radiation trapping on the spectroscopic properties is discussed. Comparison with other Yb³⁺-doped laser crystals is made. The results show that Yb³⁺:La₂(WO₄)₃ crystal is a promising laser material.     

Photoluminescence properties of the ZnO-CdO-TeO2 system doped with the Tband Yb ions

ZnO-CdO-TeO₂ was employed as a host of Tb³⁺ and Yb³⁺ ions. The matrix doped with Tb³⁺ presents a crystalline/amorphous structure, while the same matrix shows an amorphous structure when it is doped with Yb³⁺. Optical absorption spectra, measured by using photoacoustic (PA) spectroscopy, allowed to determine the band gap, which is localized in the range 3.47-3.60 eV. Both kinds of ions Tb³⁺ and Yb³⁺ in the ZnO-CdO-TeO₂ matrix show emissions that are characteristic of such ions. For Tb³⁺ the signals were allocated in 548, 586, 622 nm, respectively, while for Yb³⁺ only one signal was registered at 1000 nm.     

Fast photovoltaic characteristic of silver nano-cluster doped ZnO thin films induced by 1.064 μm pulsed laser

Fast photovoltaic characteristic was found from silver nano-cluster doped ZnO thin films when it was irradiated by 1.064 μm infrared laser. Its arising time is about 1 ns with an open-circuit photovoltage of ∼2 ns full width at half-maximum. A transient photovoltaic signal of ∼80 mV occurred with a full width at half-maximum of about 2 ns was observed under the illumination of a 4 mJ pulsed laser in duration of 25 ps. This fast photovoltaic response perhaps relate to the non-uniform distribution of the silver clusters along direction perpendicular to ZnO surface.     

Optical properties of Tm-doped GaSe single crystals

Optical properties of Tm-doped GaSe single crystals were investigated by measurements of optical absorption and photoluminescence. The single crystals were grown by the Bridgman technique. The X-ray diffraction analysis revealed that the single crystals were in the ε-type GaSe phase. The optical absorption spectra showed a sharp absorption peak at 582 nm near the band edge, which is due to direct free exciton. The temperature dependence of the energy of the exciton absorption peak was well fitted by the Varshni relation. In the photoluminescence spectrum at 10 K, we observed a very weak emission peak at 586 nm, a relatively strong emission peak centered at 613 nm, and several sharp and narrow emission peaks in the 790-840 nm region. The two emission peaks at 586 and 613 nm were associated with intrinsic emission lines due to direct free exciton and indirect bound exciton. The emission peaks in the 790-840 nm region, which were related to extrinsic emission, were assigned as due to the ³F₄→³H₆ transition of Tm³⁺ ions with a low symmetry of D₃ in the host lattice.     

Influence of size effect and sputtering conditions on the crystallinity and optical properties of ZnO thin films

The effects of the thickness variation, substrate type and annealing on the crystallinity parameters, luminescent and optical properties of the zinc oxide (ZnO) thin films were reported. The thin films were deposited on the glass and the amorphous quartz substrates by the standard RF-magnetron sputtering method using ZnO targets in the argon atmosphere. It has been found that the films deposited on the glass substrate manifest a clear size effect. Both the structural and the optical parameters show clearly minima on their thickness dependences. It has been shown that annealing of the comparatively thick ZnO films leads to increase of the crystallite sizes that are followed by a considerable rise of the cathodoluminescence intensity. The corresponding model of the crystallite growth is proposed.     

Infrared optical properties of Ba(Zr0.20Ti0.80)O3 and Ba(Zr0.30Ti0.70)O3 thin films prepared by sol-gel method

Ba(Zr_xTi_1−x)O₃ (BZT) (x = 0.20 and 0.30) thin films are deposited on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrate by sol-gel method. X-ray diffraction patterns show that the thin films have a good crystallinity. Optical properties of the films in the wavelength range of 2.5-12 μm are studied by infrared spectroscopic ellipsometry (IRSE). The optical constants of the BZT thin films are determined by fitting the IRSE data using a classical dispersion formula. As the wavelength increases, the refractive index decreases, while the extinction coefficients increase. The effective static ionic charges are derived, which are smaller than that in a purely ionic material for the BZT thin films.     

Long-lasting afterglow in Tb-doped SiO2-Ga2O3-CaO-Na2O glasses and its sensitization by Yb

Long-lasting afterglow due to Tb³⁺ ions has been observed in a Tb³⁺-doped SiO₂-Ga₂O₃-CaO-Na₂O glass, where a 4s empty orbital of Ga³⁺ probably works as an electron-trapping center. The sensitization effect of Yb³⁺ on the afterglow has been noticed.     

Energy transfer and upconversion luminescence in Tm/Yb co-doped lanthanum-zinc-lead-tellurite glasses

A series of Tm³⁺/Yb³⁺ co-doped lanthanum-zinc-lead-tellurite (TPZL) glasses pumped by a 980 nm laser diode (LD) were demonstrated to obtain a high efficiency of infrared-to-visible upconversion. Effects of PbO content on the thermal stability, structure and upconversion properties of Tm³⁺/Yb³⁺ co-doped TPZL glasses had been investigated. The efficient visible upconversion fluorescences corresponding to the ¹G₄→³H₆, ¹G₄→³F₄ and ³H₄→³H₆ transitions of Tm³⁺ were observed under 980 nm excitation. The upconversion intensities of blue, red and near infrared emissions in Tm³⁺/Yb³⁺ co-doped TPZL glasses were obviously enhanced with increasing PbO content. The dependence of upconversion intensities on excitation power and the possible upconversion mechanisms had been evaluated by a proper rate equation model. Population density in different levels and coefficients of the energy transfer rate C_Di (i=2, 4, 6) between Tm³⁺ and Yb³⁺ were estimated by fitting the simulated curves to the measured ones. The obtained three energy transfer coefficients C_D2, C_D4, and C_D6 were determined to be 5.7×10⁻¹⁷, 1.3×10⁻¹⁶ and 8.6×10⁻¹⁷ cm³/s, respectively.     

A numerical parameter study of chiral metamaterial based on complementary U-shaped structure in infrared region

In this paper, the optical properties of the chiral metamaterial (CMM) with complementary U-shaped structure assembly have been investigated numerically in infrared frequencies. Here, we systematically study the dependence of CMM's optical properties to the structural parameters. The giant optical activity, circular dichroism (CD), and high negative refraction can be obtained by properly selecting the parameters, respectively. CMMs will also lead to many applications in photonic devices due to their strong polarization effect and CD effect.     

D3→FJ emission in terbium-doped sol-gel glasses

In silicate sol-gel glass doped with trivalent terbium, the intensity of violet and blue fluorescence from the ⁵D₃ level is highly dependent on terbium concentration, on the presence of Al³⁺ co-dopant, and on annealing conditions. Evidence is presented that aluminum co-doping prevents rare earth clusters from forming, and also modifies the coupling of rare earth ions to the local environment. ⁵D₃ emission is observed in glasses annealed at 750 °C, and increases in intensity with increasing annealing time and with higher temperature. This behavior is shown to be due to the removal of residual hydroxyl ions.     

Spectroscopy of infrared transitions of Pr ions in Ga-Ge-Sb-Se glasses

Electronic transitions of Pr³⁺ ions in Ga-Ge-Sb-Se glasses corresponding to emissions in the infrared region were studied by means of absorption and emission spectroscopies and fluorescence lifetimes measurements. Transition probabilities, radiative lifetimes, branching ratios, and quantum efficiencies of most of the emission transitions including the infrared ones occurring around 1.3, 1.7, and 2.4 μm were estimated based on a standard Judd-Ofelt analysis.     

Effect of gamma doses on the optical parameters of Se76Te15Sb9 thin films

The effect of γ-radiation dose on the optical spectra and optical energy gap (E_opt.) of Se₇₆Te₁₅Sb₉ thin films was studied. The dependence of the absorption coefficient (α) on the photon energy (hν) was determined as a function of radiation dose. The films show indirect allowed interband transition that is influenced by the radiation dose. Both the optical energy gap and the absorption coefficient were found to be dose dependent. The indirect optical energy gap was found to decrease from 1.257 to 0.664 eV with increasing the radiation dose from 10 to 250 krad, respectively. The results can be discussed on the basis of γ-irradiation-induced defects in the film. The width of the tail of localized states in the band gap (E_e) was evaluated using the Urbach edge method. The refractive index (n) was determined from the analysis of the transmittance and reflectance data. Analysis of the refractive index yields the values of high frequency dielectric constant (ε_∞) and the carrier concentration (N/m^*). The dependence of refractive index on the radiation dose has also been discussed. Other optical parameters such as real and imaginary parts of the dielectric constant (ε₁, ε₂) and the extinction coefficient (k) have been evaluated. It was found that the spectral absorption coefficient is expected to a suitable control parameter of γ-irradiation-sensitive elements of dosimetric systems for high energy ionizing radiation (0.06-1.33 MeV).     

Decay pathway and high-temperature luminescence of Eu in Ca2Gd8Si6O26

The temperature-dependent luminescence of Eu:Ca₂Gd₈Si₆O₂₆ and its decay pathways are investigated in order to assess the utility of the material as a thermometric phosphor. Non-radiative decays are found to compete with radiative processes even at room temperature. A decay pathway involving decay through charge-transfer states is proposed based on the decay profiles of emissions from ⁵D₁ and ⁵D₀ levels and on the temperature sensitivity of the spectra as observed after excitation by several wavelengths. The implications of this on solid-state lighting are also discussed.     

Brillouin light scattering study of the magnetic hysteresis loop in Fe-Ni/Si(100) film with induced magnetic anisotropy

The magnetic hysteresis of Fe₅₇Ni₄₃/Si(100) with magnetic anisotropy induced by an external field has been studied by Brillouin light scattering (BLS). The results are compared with those of the magneto-optic-Kerr-effect (MOKE) measurement and the vibrating sample magnetometer (VSM). The BLS results show that the sample film has strong in-plane anisotropy. The angle between the magnetization and a 4.6 G applied magnetic field H reaches a maximum value of 45° when H lies along the hard axis. The coercivity and magnetic anisotropy field for the film obtained by the BLS are compared with the values obtained by the VSM and MOKE measurement.     

Structural and optical properties of a-Si1−xCx:H films synthesized by dc magnetron sputtering technique

Hydrogenated amorphous SiC films (a-Si_1−xC_x:H) were prepared by dc magnetron sputtering technique on p-type Si(1 0 0) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H-SiC). The deposited a-Si_1−xC_x:H film was realized under a mixture of argon and hydrogen gases. The a-Si_1−xC_x:H films have been investigated by scanning electronic microscopy equipped with an EDS system (SEM-EDS), X-ray diffraction (XRD), secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), UV-vis-IR spectrophotometry, and photoluminescence (PL). XRD results showed that the deposited film was amorphous with a structure as a-Si_0.80C_0.20:H corresponding to 20 at.% carbon. The photoluminescence response of the samples was observed in the visible range at room temperature with two peaks centred at 463 nm (2.68 eV) and 542 nm (2.29 eV). In addition, the dependence of photoluminescence behaviour on film thickness for a certain carbon composition in hydrogenated amorphous SiC films (a-Si_1−xC_x:H) has been investigated.     

Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers

In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39%, the characteristic temperatures in 290-330 K and 330-350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.     

Investigation of porous silicon carbide as a new material for environmental and optoelectronic applications

In this paper, we present an experimental study on the chemical and electrochemical etching of silicon carbide (SiC) in different HF-based solutions and its application in different fields, such as optoelectronics (photodiode) and environment (gas sensors). The thin SiC films have been grown by pulsed laser deposition method. Different oxidant reagents have been explored. It has been shown that the morphology of the surface evolves with the etching conditions (oxidant, concentration, temperature, etc.). A new chemical polishing solution of polycrystalline 6H-SiC based on HF:Na₂O₂ solution has been developed. Moreover, an electrochemical etching method has been carried out to form a porous SiC layer on both polycrystalline and thin SiC films. The PL results show that the porous polycrystalline 6H-SiC and porous thin SiC films exhibited an intense blue luminescence and a green-blue luminescence centred at 2.82 eV (430 nm) and 2.20 eV (560 nm), respectively. Different device structures based on both prepared samples have been investigated as photodiode and gas sensors.