（英）沉积参数对射频磁控溅射制备的碲锌镉薄膜的影响

采用Cd096Zn0.04Te靶,利用射频磁控溅射制备碲锌镉薄膜,通过改变基片温度、溅射功率和工作气压,制得不同的碲锌镉薄膜.将制备的碲锌镉薄膜放置在高纯空气气氛中,在473 K温度下退火.利用台阶仪、分光光度计、XRD和SEM测试设备表征,结果表明,通过退火和改变沉积参数,可以制备出禁带宽度在1.45～2.02eV之间调节的碲锌镉薄膜.     

射频磁控溅射沉积AZO透明导电膜研究

采用射频磁控溅射技术在玻璃衬底上沉积了AZO透明导电薄膜,应用灰关联-田口实验法设计了L9(34)混合直交表,研究了制程工艺对薄膜沉积速率、电阻率、光穿透率、结晶性的影响。结果表明沉积薄膜的最佳制程参数为射频功率120 W、溅射压强2 Pa、靶材-基板距离8.5 cm、薄膜沉积时间90 min;实验显示最佳制程参数下所得透明导电薄膜沉积速率为8.04 nm/min,电阻率为2.6×10–3.cm,可见光穿透率维持在84%左右。     

Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering

ZnO films and ZnO:Cu diluted magnetic semiconductor films were prepared by radio frequency magnetron sputtering on Si (111) substrates, with targets of ZnO and Zn0.99Cu0.01 O, respectively. The plasma emission spectra were analyzed by using a grating monochromator during sputtering. The X-ray photoelectron spectroscopy measurements indicate the existence of Zni defect in the films, and the valence state of Cu is 1. The X-ray diffraction measurements indicate that the thin films have a hexagonal wurtzite structure and have a preferred orientation along the c-axis. The vibrating sample magnetometer measurements indicate that the sample is ferromagnetic at room temperature, and the origin of the magnetic behavior of the samples is discussed.     

射频磁控溅射制备的ZnMgO薄膜结构和光学性能

采用射频磁控溅射法,在石英衬底上制备了Zn1-xMgxO(x=0.00～0.16)薄膜。利用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见分光光度计和光致发光(PL)光谱等分析了薄膜的结构、形貌和光学特性。结果表明:当x≤0.10时薄膜保持六角纤锌矿结构,而x=0.16时已出现MgO立方相;所有薄膜晶粒大小均匀,在100～150 nm之间;透光率在80%以上;薄膜带隙Eg与Mg含量呈线性关系;薄膜PL谱由较弱的紫外发光峰和较强的可见发光带组成,随Mg含量的增加紫外发光峰蓝移。     

射频磁控溅射法制备ZnO:Cu薄膜的磁性研究

ZnO films and ZnO：Cu diluted magnetic semiconductor films were prepared by radio frequency mag-netron sputtering on Si （111） substrates, with targets of ZnO and Zn0.99Cu0.01O, respectively. The plasma emission spectra were analyzed by using a grating monochromator during sputtering. The X-ray photoelectron spectroscopy measurements indicate the existence of Zni defect in the films, and the valence state of Cu is 1＋. The X-ray diffraction measurements indicate that the thin films have a hexagonal wurtzite structure and have a preferred orientation along the c-axis. The vibrating sample magnetometer measurements indicate that the sample is ferromagnetic at room temperature, and the origin of the magnetic behavior of the samples is discussed.     

Studies of yttrium oxide films prepared by RF magnetron sputtering

Films of yttrium oxide (Y₂O₃) were deposited on Si substrates from a Y₂O₃ target by RF magnetron sputtering. MIS capacitors in the form of Al and Y₂O₃ (400 Å)-Si were then fabricated. The leakage current density was about 10^-6 A/cm² at 1.3×10⁶ V/cm, and the breakdown field of the films was about 2.75×10⁶ V/cm. The dielectric constant of the sputtered Y₂O₃ was found to be about 12-12.7     

Electronic properties of zinc oxide thin films prepared by RF magnetron sputtering for varistor applications

ZnO thin films for varistor applications have been prepared by RF magnetron sputtering at a power of 0-1 kW using an argon pressure of 05 Pa. The films were polycrystalline with mean grain size typically 13 nm, and were preferentially oriented in the [002] direction. Optical absorption studies revealed a fundamental absorption edge at a wavelength of approximately 360 nm with a direct bandgap of 3.36 eV. van der Pauw measurements showed a decrease in resistivity from approximately 12ωm at thickness 50 nm to 0-5 ωm at thickness greater than 500 nm. Below 350 K the resistivity was essentially constant, while at higher temperatures an activation energy of approximately 0-2eV was observed, which was attributed to the effects of oxygen vacancies.     

Effects of discharge power on the structural and optical properties of TGZO thin films prepared by RF magnetron sputtering technique

The transparent semiconductors of Ti and Ga-incorporated ZnO (TGZO) thin films were prepared by radio frequency (RF) magnetron sputtering onto glass substrates. The effects of discharge power on the physical properties of thin films are studied. Experimental results show that all nanocrystalline TGZO thin films possess preferential orientation along the (002) plane. The discharge power significantly affects the crystal structure and optical properties of thin films. When the discharge power is 200 W, the TGZO thin film has the optimal crystalline quality and optical properties, with the narrowest full width at half-maximum (FWHM) of 1.76´10-3 rad, the largest average grain size of 82.4 nm and the highest average transmittance of 84.3% in the visible range. The optical gaps of thin films are estimated by the Tauc’s relation and observed to increase firstly and then decrease with the increase of the discharge power. In addition, the optical parameters, including refractive index, extinction coefficient, dielectric function and dissipation factor of the thin films, are determined by optical characterization methods. The dispersion behavior of the refractive index is also analyzed using the Sellmeier’s dispersion model.     

Thermal conductivity of AlN thin films deposited by RF magnetron sputtering

Aluminum nitride (AlN) film, which is being investigated as a possible passivation layer in inkjet printheads, was deposited on a Si (1 0 0) substrate at 400 °C by radio frequency (RF) magnetron sputtering using an AlN ceramic target. Dependence on various reactive gas compositions (Ar, Ar:H₂, Ar:N₂) during sputtering was investigated to determine thermal conductivity. The crystallinity, grain size, and Al–N bonding changes by the gas compositions were examined and are discussed in relation to thermal conductivity. Using an Ar and 4% H₂, the deposited AlN films were crystalline with larger grains. Using a higher nitrogen concentration of 10%, a near amorphous phase, finer morphology, and an enhanced Al–N bonding ratio were achieved. A high thermal conductivity of 134 W/mk, which is nine times higher than that of the conventional Si₃N₄ passivation film, was obtained with a 10% N₂ reactive gas mixture. A high Al–N bonding ratio in AlN film is considered the most important factor for higher thermal conductivity.     

直流磁控溅射制备非晶硅薄膜的研究

非晶硅薄膜（a-Si）是目前重要的光敏材料,在很多领域得到广泛应用。直流磁控溅射具有工艺简单．沉积温度低等优点,是制备薄膜的一种重要技术。采用直流磁控溅射工艺在玻璃基板上沉积薄膜,并对样品进行了退火处理。研究了沉积速率与溅射功率的关系。结果表明薄膜的沉积速率与溅射功率近似有线性关系。利用X射线衍射（XRD）对薄膜进行了分析鉴定,结果表明溅射的薄膜是非晶硅薄膜。利用扫描电子显微镜（SEM）对非晶硅薄膜的表面形貌进行了观察和分析,与X射线衍射测试的结果一致。所以．利用直流磁控溅射工艺能在常温下能快速制备出良好的非晶硅薄膜。     

直流磁控溅射制备非晶硅薄膜的研究

非晶硅薄膜(a-Si)是目前重要的光敏材料,在很多领域得到广泛应用.直流磁控溅射具有工艺简单,沉积温度低等优点,是制备薄膜的一种重要技术.采用直流磁控溅射工艺在玻璃基板上沉积薄膜,并对样品进行了退火处理.研究了沉积速率与溅射功率的关系.结果表明薄膜的沉积速率与溅射功率近似有线性关系.利用X射线衍射(XRD)对薄膜进行了分析鉴定,结果表明溅射的薄膜是非晶硅薄膜.利用扫描电子显微镜(SEM)对非晶硅薄膜的表面形貌进行了观察和分析,与X射线衍射测试的结果一致.所以,利用直流磁控溅射工艺能在常温下能快速制备出良好的非晶硅薄膜.     

磁控溅射Fe-N薄膜的微结构研究

采用薄膜技术制备的磁头具有较高的灵敏度 ,同时还可有效地缩小磁头尺寸 ,提高磁记录密度。良好的磁头材料要有较高的饱和磁化强度和较低的矫顽力。Ｆｅ Ｎ薄膜具有较好的磁学性能及比纯Ｆｅ高的耐腐蚀性和耐磨损性 ,因而近年来得到了广泛的研究。但研究者们大都致力于Ｆｅ Ｎ薄膜的制备及性能的研究[1,2 ] ,对其微观结构的研究则较少。本文利用透射电镜研究了Ｆｅ Ｎ薄膜的微观结构 ,为进一步优化性能提供依据。采用反应射频磁控溅射沉积技术合成Ｆｅ Ｎ薄膜。Ｆｅ靶纯度为 99 99%。 (10 0 )单晶Ｓｉ片作为衬底 ,表面有一氧化层存在。沉积…     

Characteristics of ZnO thin films prepared by radio frequency magnetron sputtering

We investigated in this study structural and nanomechanical properties of zinc oxide (ZnO) thin films deposited onto Langasite substrates at 200 °C through radio frequency magnetron sputtering with an radio frequency power at 200 W in an O₂/Ar gas mixture for different deposition time at 1, 2, and 3 h. Surface morphologies and crystalline structural characteristics were examined using X-ray diffraction, scanning electron microscopy, and atomic force microscopy. The deposited film featured a polycrystalline nature, with (1 0 0), (0 0 2), and (1 0 1) peaks of hexagonal zinc oxide at 31.75°, 34.35°, and 36.31°. As the deposition time increased, the ZnO film became predominantly oriented along the c-axis (0 0 2) and the surface roughness decreased. Through Berkovich nanoindentation following a continuous stiffness measurement technique, the hardness and Young’s modulus of ZnO thin films increased as the deposition time increased, with the best results being obtained for the deposition time of 3 h. In addition, surface acoustic wave properties of ZnO thin films were also presented.     

射频磁控溅射法制备Cu_2ZnSnS_4薄膜

利用射频磁控溅射法在玻璃基片上制备了Cu2ZnSnS4(CZTS)薄膜,薄膜在室温下生长,再在Ar气氛中快速退火。通过X射线衍射、X射线电子能谱、原子力显微镜和吸收谱研究了退火温度对薄膜结构、组分、形貌和禁带宽度的影响。结果表明,所制备样品为Cu2ZnSnS4多晶薄膜,具有较强的沿(112)晶面择优取向生长的特点,薄膜组分均为富S贫Cu,样品表面形貌比较均匀。退火温度为350,400,450和500℃的薄膜样品的禁带宽度分别是1.49,1.53,1.51和1.46 eV。     

射频磁控溅射制备钛酸锶钡薄膜的研究进展

综述了射频磁控溅射制备钛酸锶钡(BST)薄膜的国内外研究动态,详细阐述了溅射工艺参数(电极、溅射气压、氧分压、温度)对BST薄膜微结构和电性能的影响,提出了射频磁控溅射制备BST薄膜中亟待解决的问题。     

Study on the structural, electrical and optical properties of Al-F co-doped ZnO thin films prepared by RF magnetron sputtering

Al and F co-doped ZnO(ZnO:(Al,F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different F doping contents.The structural,electrical and optical properties of the deposited films are sensitive to the F doping content.The X-ray analysis shows that the films are c-axis orientated along the(002) plane with the grain size ranging from 9 nm to 13 nm.Micrographs obtained by the scanning electron microscope(SEM) show a uniform surface.The best films obtained have a resistivity of 2.16×10-3Ω·cm,while the high optical transmission is 92.0% at the F content of 2.46 wt.%.     

Thermal-sensitive BST thin film capacitors for dielectric bolometer prepared by RF magnetron sputtering

We have been developing a monolithic microbolometer technology for uncooled infrared focal plane arrays (Uncooled IRFPAs) along the route from fabricating pixels of thin-film dielectric bolometers on micromachined silicon substrates. In the paper, the thermal-sensitive barium strontium titanate (BST) thin film capacitors for that objective prepared by Radio-Frequency Magnetron sputtering have been investigated focusing on the condition of fabrication of BST thin films. Capacitor-Temperature properties of the thermal-sensitive BST thin film capacitors have been measured with impedance analyzer. According to the Capacitor-temperature curves, these indicated that the temperature coefficient of dielectric constant (TCD) within the ambient temperature region highly depended on the Radio-Frequency Magnetron sputtering condition of fabrication of BST thin films. BST thin film capacitors with TCD-value more than 21%/K have been prepared on the optimized condition. That is a good base for preparation of dielectric bolometer mode of uncooled IRFPAs.     

DC磁控溅射制备的TiNx薄膜组分及性能分析

利用DC磁控溅射法在p-Si(111)衬底上制备了TiNx薄膜.利用X射线能谱仪(EDX)、X射线衍射(XRD)、紫外/可见分光光度计、四探针电阻率测试仪等分析了薄膜的组分、结构和光电特性.结果表明,薄膜中N/Ti原子比接近于1;衬底温度对薄膜的择优取向影响显著,240℃附近是TiNx薄膜结晶择优取向由(111)向(200)转变的临界点;薄膜在近红外波段平均反射率随衬底温度的升高,先增大后减小;薄膜的电阻率随着衬底温度的升高而显著降低.     

Properties of V–Ce mixed-oxide thin films deposited by RF magnetron sputtering

Thin films of vanadium cerium mixed oxides are good counter-electrodes for electrochromic devices because of their passive optical behavior and very good charge capacity. We deposited thin films of V–Ce mixed oxides on glass substrates by RF magnetron sputtering under argon at room temperature using different power settings. The targets were pressed into pellets of a powder mixture of V₂O₅ and CeO₂ at molar ratios of 2:1, 1:1, and 1:2. For a molar ratio of 2:1, the resulting crystalline film comprised an orthorhombic CeVO₃ phase and the average grain size was 89 nm. For molar ratios of 1:1 and 1:2, the resulting films were completely amorphous in nature. Scanning electron microscopy images and energy-dispersive X-ray spectroscopy data confirmed these results. The optical properties of the films were studied using UV-Vis-NIR spectrophotometry. The transmittance and indirect allowed bandgap for the films increased with the RF power, corresponding to a blue shift of the UV cutoff. The average transmittance increased from 60.9% to 85.3% as the amount of CeO₂ in the target material increased. The optical bandgap also increased from 1.94 to 2.34 eV with increasing CeO₂ content for films prepared at 200 W. Photoacoustic amplitude (PA) spectra were recorded in the range 300–1000 nm. The optical bandgap was calculated from wavelength-dependent normalized PA data and values were in good agreement with those obtained from UV-Vis-NIR data. The thermal diffusivity calculated for the films increased with deposition power. For thin films deposited at 200 W, values of 53.556×10⁻⁸, 1.069×10⁻⁸, and 0.2198×10⁻⁸ m²/s were obtained for 2:1, 1:1, and 1:2 V₂O₅/CeO₂, respectively.     

直流磁控溅射法制备非晶态氧化钒薄膜光学特性研究

研究了直流反应磁控溅射工艺中衬底温度对氧化钒(V2O5)薄膜性能的影响,利用X射线光电子能谱(XPS)、扫描电子显微镜(SEM)、X射线衍射(XRD)和紫外-可见光分光光度计(UV1700)分别对薄膜进行了表征.实验结果表明,除了组分和晶态,薄膜的形貌和光学性能受衬底温度的影响很大.随着衬底温度的升高,膜表面变得粗糙,膜厚减小.光学特性测试表明,当衬底温度从160℃升高到320 ℃,光学带隙从2.39 eV下降到2.18 eV.