Mn2+掺杂ZnSe量子点的制备及表征

利用水相合成法,以Zn(Ac)2、NaBH4、Na2SeO3、Na2S、Mn(Ac)2为原料,N-乙酰-L-半胱氨酸为稳定剂,合成了Mn2+掺杂的ZnSe∶Mn量子点。研究了稳定剂与量子点(Zn2+)配比、Mn2+离子掺杂浓度、老化温度以及老化时间对ZnSe∶Mn量子点发光性能的影响,并对所得量子点固体粉末进行了XRD与IR表征与分析。结果表明该方法是一种简便、快捷且环境友好的合成方法。     

掺锰五磷酸铈、铽晶体的生长及其光谱

用蒸发溶液法从磷酸溶液中首次生长出一系列Ce_xTb_(1-x)P_5O_(14):Mn晶体。它们属于单斜晶系,空间群P2_1/c。计算了晶格常数,用EPR结果确定在晶体中锰离子呈二价。测定了Ce_xTb_(1-x)P_5O_(14):Mn晶体的光谱,说明在晶体中存在着Ce~(3+)到Tb~(3+)和Mn~(2+)的能量转移。Mn~(2+)和Tb~(3+)的发射峰重叠,并使Tb~(3+)的发射峰增强。     

化学发光法在环保中的应用 Ⅱ.矿泉水及污水中Mn(Ⅱ)的测定

与Cr~(3+)离子类似,痕量Mn~(2+)离子对发光剂鲁米诺(Luminol)在碱性介质中的氧化反应也有催化作用。该反应过程中会发出具有一定波长的光,发光强度与Mn~(2+)离子的含量成比例关系。这一过程可表示为: 所用的氧化剂一般是H_2O_2。通常采用比色法、沉淀法或原子吸收法测定Mn(Ⅱ),这些方法不仅需要烦琐的前处理,而且灵敏度低,重现性差。本文根据上述原理,利用自行设计的注入式发光分析仪,建立了微量Mn(Ⅱ)的化学发光测定法,取得较好的结果.方法简便快     

ZnSe: Fe2+中的动态Jahn-Teller效应和远红外光谱的研究

推导了3d4/3d6离子基态 5D在立方晶体场、自旋-轨道耦合和动态Jahn-Teller效应作用下的哈密顿矩阵,并用对角化该哈密顿矩阵的方法研究了Fe2+在ZnSe中的远红外光谱,理论计算与实验符合得好.研究表明,在ZnSe∶ Fe2+中,比晶体场理论分析多出的分裂谱线是Fe2+与ZnSe晶格间的动态Jahn-Teller效应引起的.还预测了其它Jahn-Teller效应分裂谱.所推导的哈密顿矩阵对研究3d4/3d6离子在立方晶体中的精细光谱、电子顺磁共振谱和动态Jahn-Teller分裂都是有用的.     

Cu（Ⅱ）—A沸石的表征

用ESR表征了几种Cu(Ⅱ)-A沸石中Cu~(2+)离子物种,发现在铜含量较高(5.20wt%)的样品中,偶极-偶合的Cu~(2+)离子对占压倒优势,而孤立的Cu~(2+)离子则很少.样品还原后的ESR结果表明,偶极-偶合的Cu~(2+)离子对至少存在着两种不同类型的物种.结合ESR、XPS和XRD方法,研究了Cu(Ⅱ)-A沸石中共存阳离了Mn~(2+)的效应,并讨论了Cu~(2+)和Mn~(2+)两种离子间的氧化还原反应.     

Mn:ZnSe/ZnS核-壳结构纳米晶的无膦法制备和光学性质

以溶于十八烯的Se作为Se前驱体,在无膦条件下制备得到了具有较高量子产率的Mn:ZnSe纳米晶.为了进一步提高纳米晶的稳定性和发光强度,运用外延生长的方法进行ZnS壳层包覆并得到了具有核-壳结构的Mn:ZnSe/ZnS纳米晶.X射线衍射、透射电子显微镜及吸收和荧光光谱测试结果表明,该方法合成的Mn:ZnSe纳米晶以及核-壳结构Mn:ZnSe/ZnS纳米晶均为闪锌矿结构,具有良好的单分散性,包覆ZnS外壳层后量子产率可达到60%以上.此外,对ZnS壳层厚度和Mn2+的掺杂量对Mn:ZnSe/ZnS纳米晶发光强度的影响及发光机制也进行了初步讨论.     

Eu~(2+)、Mn~(2+)、Sr~(2+)掺杂BaMgAl_(10)O_(17)的燃烧法合成及光致发光性能（英文）

在600℃温度下,采用液相燃烧法合成了Sr~(2+)、Eu~(2+)和Mn~(2+)三掺的Ba Mg All0O17(BAM)蓝绿荧光粉。用XRD、SEM和荧光光谱仪分别分析和表征该荧光粉的物相、形貌和光致发光性能。结果表明,液相燃烧法合成BAM的温度明显低于传统的高温固相合成法;合成的纳米棒均匀、无团聚现象;荧光光谱仪分析表明Eu~(2+)、Mn~(2+)离子间存在能量传递,且Sr~(2+)能有效提高BAM的发光强度,约为固相法制备荧光强度的1.8倍。BAM:0.1Eu~(2+),0.04Mn~(2+),0.05Sr~(2+)色坐标为(0.146,0.250),属于蓝绿光。     

K3ZrF7:Mn4+红色荧光粉的溶剂热合成及发光性质

用溶剂热法制备了K_3ZrF_7,并利用离子交换法对其进行Mn~(4+)掺杂,获得了发光强度较高的红色荧光粉。分别用X射线衍射仪(XRD)和扫描电子显微镜(SEM)对材料的结构和形貌进行了表征。考察了掺杂浓度(物质的量分数)对材料发光强度的影响。通过对比2种锰掺杂材料的发光行为,发现在掺杂浓度相同的条件下,K_3ZrF_7∶Mn~(4+)的发光强度是K_2ZrF_6∶Mn~(4+)的10倍多。通过对二者晶体结构和掺杂离子配位环境进行分析,从晶体场理论的角度解释了发光强度差异机制。     

掺锰五磷酸铈晶体的生长及锰离子的价态

用蒸发溶液法从磷酸溶液中生长出不同掺锰量的五磷酸铈晶体。在合适的生长条件下可获得优质的光学晶体。用电子顺磁共振确定晶体中锰离子为二价。CeP_5O_(14)-Mn(II)的激发光谱和发射光谱表明,Ce~(3+)-Mn~(2+)间存在着能量转移。     

Mn~(2+)掺杂NaBiF_4∶Yb/Er体系的可调控上转换发光

采用溶剂热法制备了不同Mn~(2+)掺杂量的NaBiF_4∶Yb/Er/Mn上转换发光体系,研究了其形貌、晶相、上转换发光性能随Mn~(2+)掺杂量的变化,并探讨了该体系的能量传递机理.实验结果表明,Mn~(2+)的掺杂不会引起NaBiF_4从六方相转变为立方相,但会增大其尺寸;同时在NaBiF_4体系中,Mn~(2+)可以与Er~(3+)进行能量传递,使红光发射得到增强,并且随着Mn~(2+)浓度的增加,红/绿光发射强度比也会随之增大.此外,还考察了NaBiF_4∶Yb/Er/Mn体系的变温发射光谱,发现当温度升高时,红/绿光强度比以及520 nm绿光与540 nm绿光发射强度比都总体上呈增大趋势.     

不同形貌ZnSe的制备及光电化学性能

采用水热法制备了ZnSe纳米棒和微球, 用XRD, TGA-DTA和SEM等技术对其进行了表征, 提出了解释ZnSe微球的形成新机理. 研究结果表明, 纳米棒直径为50~100 nm, 棒长约为200~300 nm, ZnSe微球直径为3~10 μm.; 纳米棒在反应温度为240 ℃时具有闪锌矿和纤维锌矿型混晶结构, 微球在反应温度为210 ℃时具有闪锌矿结构; 将ZnSe纳米棒和微球均匀地涂在导电玻璃的导电面上, 于380 ℃煅烧40 min后制成膜电极, 并进行了光电化学研究, 纳米棒膜结构电极最高单色光的光电转换效率(IPCE)可达到9.09%.     

ZnSe纳米片晶的可控合成

以乙二胺四乙酸(EDTA)为稳定剂、丁胺(BA)为结构导向模板, 采用水热合成方法制备了尺寸和晶型可控的ZnSe纳米片晶; 利用XRD, TEM, SEM以及紫外-可见漫反射等手段对所得的产物进了表征, 结果表明, 通过改变水热温度和BA用量, 可以实现ZnSe纳米片晶的大小和物相的调控, 并初步分析了其形成过程.     

溶剂热法合成ZnSe纳米球

以乙酸锌和Se粉为原料,环己酮为溶剂,于180 ℃反应24 h制得黄色纳米球ZnSe,其结构和性能经XRD,SEM及TEM表征.     

Water-based route to colloidal Mn-doped ZnSe and core/shell ZnSe/ZnS quantum dots

Relatively monodisperse and highly luminescent Mn(2+)-doped zinc blende ZnSe nanocrystals were synthesized in aqueous solution at 100 °C using the nucleation-doping strategy. The effects of the experimental conditions and of the ligand on the synthesis of nanocrystals were investigated systematically. It was found that there were significant effects of molar ratio of precursors and heating time on the optical properties of ZnSe:Mn nanocrystals. Using 3-mercaptopropionic acid as capping ligand afforded 3.1 nm wide ZnSe:Mn quantum dots (QDs) with very low surface defect density and which exhibited the Mn(2+)-related orange luminescence. The post-preparative introduction of a ZnS shell at the surface of the Mn(2+)-doped ZnSe QDs improved their photoluminescence properties, resulting in stronger emission. A 2.5-fold increase in photoluminescence quantum yield (from 3.5 to 9%) and of Mn(2+) ion emission lifetime (from 0.62 to 1.39 ms) have been observed after surface passivation. The size and the structure of these QDs were also corroborated by using transmission electron microscopy, energy dispersive spectroscopy, and X-ray powder diffraction.     

Photoluminescence brightening via electrochemical trap passivation in ZnSe and Mn(2+)-doped ZnSe quantum dots

Spectroelectrochemical experiments on wide-gap semiconductor nanocrystals (ZnSe and Mn(2+)-doped ZnSe) have allowed the influence of trap electrochemistry on nanocrystal photoluminescence to be examined in the absence of semiconductor band filling. Large photoluminescence electrobrightening is observed in both materials upon application of a reducing potential and is reversed upon return to the equilibrium potential. Electrobrightening is correlated with the transfer of electrons into nanocrystal films, implicating reductive passivation of midgap surface electron traps. Analysis indicates that the electrobrightening magnitude is determined by competition between electron trapping and photoluminescence (ZnSe) or energy transfer (Mn(2+)-doped ZnSe) dynamics within the excitonic excited state, and that electron trapping is extremely fast (k(trap) ≈ 10(11) s(-1)). These results shed new light on the complex surface chemistries of semiconductor nanocrystals.     

Thermodesorptive analysis of GaAs and ZnSe surfaces

This paper concerns thermodesorption analysis of the interaction of ammonia, hydrogen, carbon dioxide and a mixture of H(2) + CO(2) with GaAs and ZnSe surfaces, to determine the strength and concentration of acid surface centres. The mechanism of interaction of the gases and surfaces has been examined. This work was aimed at differentiating between the strengths of acid centres on GaAs and ZnSe semiconductor surfaces to obtain more information about the quantity of hydrogen and carbon dioxide adsorbed, their energy characteristics, the presence or absence of dissociation, and the nature of the CO(2) hydration.(1).     

Magnetic and luminescent properties of chromium-doped ZnSe crystals

Magnetic and photoluminescent properties of ZnSe:Cr crystals were studied within 5–300 K temperature range. It was shown that, at chromium concentrations below 0.05 at. %, Cr ions form point substitutional defects, which exhibit ferromagnetic properties. As a result, the emission caused by radiative recombination of the chromium-bound excitons appears and the chromium intrashell emission intensity increases. At concentration of the doping impurity higher than 0.05 at. %, chromium starts to form homonuclear pairs, which are antiferromagnetic and also lead to the concentration quenching of the chromium emission bands in ZnSe:Cr crystals photoluminescent spectra.     

First-principles study on doping of tetragonal ZnSe monolayers

Doping is a very important and effective method to be used to modulate the properties of two-dimensional (2D) materials. In this work, the electronic and magnetic properties of ultrathin tetragonal ZnSe monolayer doped by twenty different kinds of atoms neighboring Zn/Se were systemically investigated using first-principles calculations. Substitution at the Zn/Se sites was found to be easy if the monolayer was grown under Zn-/Se-poor conditions. Among non-metal dopants, only F atom is thermodynamically favored to replace Se atom, while a number of metal atoms (i.e. Ca, Sc, Ti, and Mn) are able to substitute Zn atom. It is suggested by theoretical calculations that pristine ZnSe monolayer inclines as an n-type semiconductor by certain doping. Our results open a new avenue for the modulation of the novel tetragonal ZnSe monolayer for a wealth of potential optoelectronic applications.