K_2H(IO_3)_2Cl单晶的喇曼光谱研究

本文报道了水溶液生长的K_2H(IO_3)_2Cl单晶室温下喇曼光谱,有几条谱线的喇曼散射效率很高,说明该晶体可能作为喇曼频移器的材料,谱图中包含有氢键(O一H—O)的特征振动频率,在90°散射几何配置y(xx)z和z(yy)x下,观测到的A_1(TO+LO)表示的谱图明显地不相同,晶体易遭受到光损伤。     

BaTiO3和Ce:BaTiO3晶体极性声子和电磁激元的喇曼散射研究

从声子-电磁激元频率色散关系的普遍公式出发,推导出了单轴晶体的Merten方程和电磁激元的频率色散关系。测量了BaTiO₃和Ce:BaTiO₃晶体的简正模和斜声子的喇曼散射谱,并根据Merten方程,拟合出了斜声子的方向色散曲线;记录了A₁类电磁激元在不同波矢值下的喇曼谱,观察到其频率色散现象.根据以上结果,对A₁(TO)模喇曼谱中两个宽的非对称峰的归属和BaTiO₃晶体的结构相变机制进行了讨论;计算出了这两种晶体的受夹介电常数;分析了掺Ce对BaTiO₃晶体结构的影响。 关键词：     

LiNbO3:MgO晶体的喇曼光谱研究

首次获得了LiNbO₃:MgO晶体的喇曼光谱。与纯LiNbO₃晶体的喇曼光谱相比较,A₁(TO)模和E(TO)模的谱线数目、频率和相对强度均基本不变,线宽略有增加。这说明,LiNbO₃晶体较强的A₁(TO)和E(TO)振动模的喇曼光谱主要是由氧八面体(NbO₆)特征基团所贡献的。 关键词：     

单轴晶体喇曼光谱的x轴和y轴的非等效性

本文表明,单轴晶体的喇曼光谱,对于非极性模和A(z)(或B(z))模,在各种几何配置下,x轴和y轴都是等效的。极性模E(x)和E(y),对于四角和六角晶系,x轴和y轴大部分是等效的;而对于三角晶系,只有少部分是等效的。 关键词：     

InGaN薄膜的紫外共振喇曼散射

利用325nm紫外光激发,对不同组分的In_xGa_1-xN薄膜的喇曼散射谱进行了研究.在光子能量大于带隙的情况下,观察到显著增强的二阶A₁(LO)声子散射峰.二阶LO声子峰都从一阶LO声子的二倍处向高能方向移动,移动量随样品In组分的增加而增大,认为是带内Frhlich相互作用决定的多共振效应引起的.分析了一阶LO声子散射频率和峰型与In组分的关系.在喇曼谱中观察到样品存在相分离现象,并与X射线衍射的实验结果进行 关键词： xGa_1-xN合金')" href="#">In_xGa_1-xN合金 紫外共振喇曼散射 二阶声子 相分离     

c向静电场作用下α-LiIO3单晶的喇曼谱“串线”和谱线强度改变的机理

在c向静电场作用下,α-LiIO₃单晶的喇曼谱发生“串线”,并且谱线强度改变。本文分析了这一现象的起因:由于离子输运引起的空间电荷涨落使α-LiIO₃单晶的极化率张量和喇曼张量主轴方向发生涨落。前者产生o←→e光散射,散射光再发生一次喇曼散射,造成喇曼谱“串线”和谱线强度的改变;后者直接造成喇曼诺“串线”和谱线强度的变化。前者的贡献远大于后者。 关键词：     

六方相InGaN外延膜的显微Raman散射

用X射线衍射(XRD)技术和显微Raman散射方法对金属有机化学气相沉积(MOCVD)法生长的六方相In_xGa_1-xN薄膜样品进行了研究，观察到了相分离现象和LO声子-等离子耦合模(LPP⁺)，讨论了In_xGa_1-xN的A₁(LO)模被屏蔽的主要物理机制.同时，对Raman谱中E₂和A₁(TO)声子模进行了分析和讨论.在In_xGa_1-xN样品的低温Raman谱中还观察到单电子跃迁产生的Raman散射信号. 关键词： Raman散射 X射线衍射 相分离 应力 LO声子-等离子耦合     

KTiOPO4晶体纵横模劈裂的喇曼谱

在室温下测量了ＫＴｉＯＰＯ₄单晶的偏振喇曼散射谱，应用９０°散射及背散射得到了各模的峰位值，其中Ｂ₁（ＬＯ）模、Ｂ₂（ＬＯ）模的喇曼谱测量尚未见报道过。根据ＬＯ－ＴＯ劈裂的实验结果，计算出该晶体极化模的有效电荷、振子强度及沿对称轴方向的静态介电常数。 关键词：     

三元合金Ga0.52In0.48P的喇曼散射谱

采用室温下微区Raman散射方法,观测到了GaInP2的LO双模行为和禁戒的TO模,由于晶格有序导致晶体对称性从Td降低为C3v,从而使禁戒的TO模变为Raman活性。在所有的样品中都观测到了由晶格无序激活的DALA模。在有序样品中,除观测到二级Raman散射峰LO1＋LO2以外,还观测到了由超晶格效应所导致的FLA折叠模和LO模的分裂。对LO模峰谷b/a的分析表明,随着晶格有序度的增加,b/a值减小。这是因为：一方面主要是由于禁戒的TO模变为Raman活性所引起的,另一方面,还可能有LO1模和LO2模分裂的贡献。在实验上,可以用b/a值或FLA的强度来表示样品的有序度。     

三元合金Ga_(0.52)In_(0.48)P的喇曼散射谱

采用室温下微区Raman散射方法 ,观测到了GaInP2 的LO双模行为和禁戒的TO模 ,由于晶格有序导致晶体对称性从Td 降低为C3v,从而使禁戒的TO模变为Raman活性。在所有的样品中都观测到了由晶格无序激活的DALA模。在有序样品中 ,除观测到了二级Raman散射峰LO1+LO2 以外 ,还观测到了由超晶格效应所导致的FLA折叠模和LO模的分裂。对LO模峰谷比b/a的分析表明 ,随着晶格有序度的增加 ,b/a值减小。这是因为 :一方面主要是由于禁戒的TO模变为Raman活性所引起的 ,另一方面 ,还可能有LO1模和LO2 模分裂的贡献。在实验上 ,可以用b/a值或FLA的强度来表示样品的有序度。     

Raman analysis of amorphous silicon ruthenium thin films embedded with nanocrystals

We report the Raman analysis of both as‐deposited and annealed amorphous silicon ruthenium thin films embedded with nanocrystals. In the Raman spectra of as‐deposited films, variations of TO peak indicate a short‐range disorder of a‐Si network with an increase of Ru concentration. The substitutional Ru atoms lower the concentration of Si―Si bonds and suppress the intensity of TO peak, but have less effect on TA, LA and LO peaks. In the Raman spectra of annealed films, characteristic parameters confirm the upgrade of a‐Si network at a low annealing temperature and the emergence of both ruthenium silicide and silicon nanocrystals at 700 °C. Although ruthenium silicide nanocrystals present no Raman peaks in the Raman spectra of as‐deposited samples, the non‐linear variations of intensity ratios I_{LA + LO}/I_TO and I_TA/I_TO still suggest their existence, and these nanocrystals are subsequently verified by high‐resolution transmission electron microscopy. Copyright © 2015 John Wiley & Sons, Ltd.     

Resonant Raman studies of surface composition and structural ordering in laser-irradiated Hg1-xCdxTe

1-x Cd_xTe for x=0.165 and x=0.18. The annealing was performed in air with a Nd:YAG laser tuned to the first harmonic. A pulse duration of 72 ns and irradiation energy densities of 270 and 400 mJ/cm² were used. Information on both the structural ordering and the alloy composition in irradiated Hg_1-xCd_xTe was obtained by resonance Raman spectroscopy with laser photon energies of between 2.41 and 2.54 eV. The presented Raman spectra from annealed samples indicate structural disorder and a decrease in the degree of alloying as a result of Hg outdiffusion and segregation caused by laser-induced nonequilibrium melting and solidification. Moreover, a shift of the maximum resonant enhancement for the TO₂, LO₂, A, and LO₁&TO₁ modes in the case of a Hg_0.82Cd_0.18Te sample, annealed by 400 mJ/cm² laser pulse, to higher photon energy points to an increase in the composition from x=0.18 to x?0.3. Received: 14 July 1997/Accepted: 10 October 1997     

Localized optical phonons in GaAs/AlAs superlattices grown on (311)A and (311)B surfaces

A study is reported of optical vibrational modes in [311]-grown GaAs/AlAs superlattices. An analysis of the TO and LO localized modes observed in IR reflectance spectra showed that the difference between the TO and LO mode frequencies in superlattices grown on (311)A and (311)B surfaces is due to the different localization lengths of these modes. The dispersion of transverse optical phonons in GaAs derived from IR reflectance spectra is in a good agreement with Raman scattering data. Fiz. Tverd. Tela (St. Petersburg) 40, 550–552 (March 1998)     

Theory of resonant forbidden Raman scattering in semiconductors

The Raman tensors for the electric field-induced and wavevector dependent scattering from LO phonons in semiconductors have been calculated near critical points using a perturbation treatment. The resulting expressions have analytic closed forms such that the dependence of the forbidden scattering intensity on the incident photon energy and the applied d.c. electric field can be evaluated from available energy band parameters. The forbidden LO scattering intensity of GaAs in the back scattering configuration has been numerically calculated near the e₁ and E₁ gaps as functions of the incident photon energy and the dc electric field. The result shows strong interference between the two scattering processes. The allowed TO and LO Raman scattering intensities of GaAs were also calculated at a wavelength of 1.06 μm from the SHG and Faust-Henry coefficients, and compared with the forbidden LO intensity.     

Splitting of transverse optical phonon modes localized in GaAs quantum wires on a faceted (311)A surface

The energy splitting of fundamental localized transverse optical (TO1) phonon modes in GaAs/AlAs superlattices and quantum wires grown by molecular-beam epitaxy on a faceted (311)A GaAs surface is observed by Raman spectroscopy. The form of the Raman scattering tensor makes it possible to observe the TO_x and TO_y modes separately, using different scattering geometries the y and x axes are the directions of displacement of the atoms and are directed parallel and transverse to the facets on the (311)A surface). Enhancement of the splitting of the TO1_x and TO1_y modes is observed as the average thickness of the GaAs layers is decreased from 21 to 8.5 Å. The splitting is probably due to the effect of the corrugation of the GaAs/AlAs (311)A hetero-interface on the properties of localized phonon modes. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 1, 45–48 (10 July 1997)     

Spectroscopy of phonon and vibronic states of YbAl3(BO3)4 single crystal

The polarized Raman and reflection spectra of a single crystal YbAl₃(BO₃)₄ at room temperature were studied. Raman active vibrational modes A ₁, E _TO, and E _LO are identified. In the Raman spectrum, we detected an intense line at a frequency of 1018 cm⁻¹, which refers to internal vibrations of the BO₃ group and is known to be promising for use in amplifiers based on stimulated Raman scattering. From the simulation of reflection spectra by the method of dispersion analysis the frequencies of A ₂ vibrational modes were determined. Intense bands observed in the low-temperature transmission spectra in the range of f-f transitions in the Yb³⁺ ion are attributed to electron-phonon transitions. The Raman lines are compared with electron-phonon lines in the transmission spectrum.     

Raman and infrared reflection spectroscopy in black phosphorus

The symmetry and energies of all optically active phonon modes in black phosphorous are determined by polarized Raman scattering and infrared reflection spectroscopy at room temperature. The obtained energies are; 365 and 470 cm^-1 for A_g modes, 197 for B_lg, 442 for B_2g, 223 and 440 for B_3g, 136 (TO) and 138 (LO) for B_lu, and 468 (TO) and 470 (LO) for B_2u, respectively. The small TO-LO splitting is related to the charge transfer between phosphorus atoms induced by the atomic displacement.     

Optical phonons in nanosize GaAs and AlAs clusters in an InAs matrix

A Raman scattering method is used to investigate structures containing nanosize GaAs and AlAs clusters, which were grown by molecular-beam epitaxy on InAs substrates by the mechanism of self-organized growth under mechanical stress. A large shift of the phonon lines of GaAs and AlAs clusters with respect to the phonon frequencies in the bulk materials (36 and 24 cm⁻¹ for GaAs LO and TO phonons and 55 and 28 cm⁻¹ for AlAs LO and TO phonons, respectively) is observed in the spectra. This fact is explained by the presence of strong mechanical stresses in the GaAs and AlAs clusters. A comparison of the experimental data with the computed strain dependences of the phonon frequencies shows that the GaAs and AlAs clusters are pseudomorphic, i.e., they do not contain dislocations, which lead to relaxation of the mechanical stresses. In the interval between the InAs TO and LO phonon frequencies, the Raman scattering spectra contain features associated with interfacial phonons. The position of these features also attests to the formation of three-dimensional GaAs and AlAs islands and are described well by a continuum dielectric model. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 7, 463–467 (10 October 1999)     

气相外延GaN的拉曼散射

测量了在蓝宝石衬底上气相外延生长GaN的拉曼散射谱.除观察到已被确认的两个E2,一个A1(TO)和一个E1(TO)声于振动以外,在734±3cm-1处观察到一个散射峰且从实验上确认其为GaN的纵向光学声子模E1(LO).而且发现其强度与外延层晶体质量密切相关.A1(TO)和高频E2散射峰相对强度变化显示不同生长条件引起的外延层质量的变化.