Development of high-throughput, high-damage-threshold beam separator for 13 nm high-order harmonics

We demonstrate a high-throughput, high-damage-threshold beam separator for wavelengths shorter than 30 nm, which uses a 10 nm thick niobium nitrogen film prepared on a Si substrate, set at the Brewster angle relative to the pump wavelength. The film was deposited by rf reactive magnetron sputtering on a Si substrate. The beam separator has an attenuation ratio of 0.01 and a damage-threshold intensity of at least 0.8 TW/cm2 for a 26 fs pump pulse. The measured reflectivity of the beam separator exceeded 70% in a wavelength range of 13-18 nm. This broadband beam separator may be used to eliminate energetic laser pulses from longitudinally pumped x ray lasers as well as from high-order harmonics.     

13.9 nm马赫贞德干涉仪用软X射线分束镜研究

 介绍了13.9 nm马赫贞德干涉仪用软X射线分束镜的设计、制备与性能检测。基于分束镜反射率和透过率乘积最大的评价标准，设计了13.9 nm软X射线激光干涉实验用多层膜分束镜。采用磁控溅射方法在有效面积为10 mm×10 mm、厚度为100 nm的Si3N4基底上镀制了Mo/Si多层膜，制成了多层膜分束镜。利用X射线掠入射衍射的方法测量了Mo/Si多层膜的周期。用扩束He-Ne激光束进行的投影成像方法定性分析了分束镜的面形精度，利用光学轮廓仪完成了分束镜面形精确测量。利用北京同步辐射装置测量了分束镜反射率和透射率，在13.9 nm处，分束镜反射率和透过率乘积达4%。使用多层膜分束镜构建了软X射线马赫贞德干涉仪，并应用于13.9 nm软X射线激光干涉实验中，获得了清晰的含有C8H8等离子体电子密度信息的动态干涉条纹。     

High-order harmonics from solid targets as a probe for high-density plasmas

The interaction of 100-fs Ti:sapphire laser pulses with thin foil targets was experimentally investigated at intensities exceeding 10(18) W/cm(2). High harmonics were observed in transmission through an overdense plasma in the direction of the incident beam. From the cutoff frequency of the harmonics an electron density of 1 x 10(24) cm(-3) is inferred, indicating a compression of the plasma by the ponderomotive force of the laser pulse.     

软X射线多层膜分束镜的研制

介绍了软件Ｘ射线多层膜分束镜的制备,采用蚀基底法和氯化钠脱膜分离法制备且获得了大面积的Ｍｏ／Ｓｉ多层膜分束镜。     

TEM and HREM of diamond crystals grown on Si tips: structure and results of ion-beam-treatment

Diamond single crystals were grown on the silicon whiskers by a hot filament chemical vapor deposition technique at the filament temperature about 2100 degrees C and the temperature of support 800 degrees C. Specimens were examined by SEM, TEM, HRTEM and SAED. When the filament temperature was about 1900 degrees C globular polycrystalline diamond particles were grown. At a support temperature more then 800 degrees C SiC nanoparticles were formed. To investigate the ion etching process of the silicon tip/diamond system, tips were treated with an Ar(+) beam with energy up to 30 kV. The results depend on fluence: at 4 x 10(18)ion/cm(2) diamonds and partially Si tips were destroyed, amorphous layer was formed (sometimes with nanometric size fragments of diamond); at 1 x 10(18)ion/cm(2) sharpened diamonds (radius of curvature about 20 nm) covered with amorphous layer (radius about 80 nm) probably with nanoclusters of diamond were observed; at 4.4 x 10(17) ion/cm(2) there was no visible tip sharpening but formation of amorphous thick layer occurred. The emission characteristics of Si tips covered with diamond were improved due to ion treatment. Since such tips in our case were covered with amorphous layer containing nanometric size fragments of diamond, we suppose this layer is responsible for electron emission improvement.     

13.9nm软X射线激光用大面积多层膜分束镜研制

 基于分束镜反射率和透射率的乘积为衡量标准的原则,设计了13.9nm软X射线激光干涉测量所需的多层膜分束镜，用磁控溅射法在有效面积达10mm×10mm，厚100nm的氮化硅窗口上镀制Mo/Si多层膜,实现了分束镜制作。用表面轮廓仪实测分束镜面形精度达到nm量级，同步辐射反射率计测试表明,分束镜的反射率和透射率乘积约4%。     

Modification of the amorphous carbon films by the ns-laser irradiation

The effect of a nanosecond laser irradiation of thin (60 and 145 nm) amorphous, diamond-like carbon films deposited on Si substrate by an ion beam deposition (IBD) from pure acetylene and acetylene/hydrogen (1:2) gas mixture was analyzed in this work. The films were irradiated with the infrared (IR) and ultraviolet (UV) radiation of the nanosecond Nd:YAG lasers working at the first (1.16 eV) and the third (3.48 eV) harmonics, using a multi-shot regime. The IR laser irradiation stimulated a minor increase in the fraction of sp² bonds, causing a slight decrease in the hardness of the films and initiated SiC formation. Irradiation with the UV laser caused the formation of carbides and increased hydrogenization of the Si substrate and the fraction of sp² sites. Spalliation and ablation were observed at a higher energy density and with a large number of laser pulses per spot.     

硅光子晶体TE模式光下路分束器设计

设计了基于自准直效应的硅光子晶体TE模式13和12光下路分束器。13光下路分束器由4个分束镜组成,而12下路分束器由3个分束镜和1个反射镜组成。利用多光束干涉原理推导出光下路分束器各个出口的透射谱理论公式。通过选择合适的分束镜,可以得到不同分束比例的光下路分束器。对于13光下路分束器,设计了1∶1∶1和1∶2∶3两种分束比例;对于12光下路分束器,设计了1∶1和1∶2两种分束比例。再利用时域有限差分软件数值模拟了透射谱,其结果与理论设计一致。当下路波长为1550 nm时,13和12两种光下路分束器的大小均约为10 m 10 m,自由光谱区为36 nm,覆盖了整个光通信C波段。     

Study of Si and C adatoms and SiC clusters on the silicon surface by the molecular dynamics method

Individual Si and C adatoms, as well as SiC clusters, on a Si surface are simulated by the molecular dynamics method in the course of investigation of the initial stages of formation of a SiC layer on silicon with the help of molecular beam epitaxy. The potential energy surfaces for Si and C adatoms on the (2 × 1) reconstructed Si(001) surface and on the nonreconstructed Si(111) surface, as well as on the Si(111) surface with a SiC cluster, are calculated and analyzed. The values of migration barriers for adatoms on these surfaces are calculated. The effect of the SiC cluster on deformation of the surface region of Si(111) and on the migration of adatoms is investigated. The deep minima observed on the potential energy surfaces immediately above a cluster and at its boundaries can trap diffusing adatoms. The distributions of stresses and strains in the silicon lattice under a cluster on the surface are studied and described.     

Rb（5PJ）＋Rb（5PJ）→Rb（5JS）＋Rb（nl=5D，7S）碰撞能量合并

研究了Rb(5PJ)+Rb(5PJ)→Rb(nlJ')+Rb(5S)碰撞能量合并过程,利用单模半导体激光器分别共振激发Rb原子的5P1/2或5P3/2态,利用另一与泵浦激光束反向平行的单模激光束作为吸收线探测激发态原子密度及其空间分布,吸收线分别调至5P1/2→5D3/2和5P3/2→7S1/2跃迁.由激发态原子密度和谱线荧光比得到碰撞能量合并过程的截面,对5P3/2激发,碰撞转移得到5D5/2,5D3/2和7S1/2的截面分别是(1.32士0.59)×10-14,(1.18士0.53)×10-14和(3.21士1.44)×10-15cm2;对5P1/2激发,碰撞转移到5D5/2和5D3/2的截面分别是(6.57士2.96)×10-15和(5.90士2.66)×10-15cm2.与其他的实验结果进行了比较.     

ATLEED研究6H-SiC(0001)-(3×3)R30°重构表面

低能电子衍射(LEED)对6H-SiC(0001)-(3×3)R30°表面的研究结果表明,该表面有1/3单层的Si原子吸附在T4空位上与第一个SiC复合层中的三个Si原子键接,它们之间的垂直距离为0.171nm.通过对该表面10个非等价垂直入射衍射束的自动张量低能电子衍射(ATLEED)计算,得到“最佳结构”由于表面SiC复合层堆积顺序不同而产生的三种表面终止状态(surface termination)的混合比例为S1∶S2∶S3=15∶15∶70,理论计算与实验I-V曲线比较得到可靠性因子RVHT=0.165,RP=0.142,表明表面生长符合能量最小化的台阶生长机制.     

Focusing of a tabletop soft-x-ray laser beam and laser ablation

We focused the beam of a high-repetition-rate capillary-discharge tabletop laser operating at a wavelength of 46.9 nm, using a spherical Si/Sc multilayer mirror. The energy densities significantly exceeded the thresholds for the ablation of metals. Single-shot laser ablation patterns were used in combination with ray-tracing computations to characterize the focused beam. The radiation intensity within the 2-mum -diameter central region of the focal spot was estimated to be approximately 10(11)W/cm(2), with a corresponding energy density of ~100 J/cm(2).     

Ni/4H-SiC 肖特基势垒磁场下输运性质的分析

采用高真空电子束蒸发的方法将镍 (Ni)淀积在 4H SiC(0 0 0 1)面上 ,制备出良好的Ni/4H SiC肖特基接触 .研究了Ni/4H SiC肖特基势垒在强磁场和低温下的I -V特性 ,并以热电子发射理论为基础 ,结合弛豫近似玻尔兹曼方程对Ni/4H SiC肖特基势垒在磁场下的输运性质进行了分析和计算 ,发现电流的变化与磁场的平方和电压成线性关系 ,和温度成反比关系 ,与实验结果基本符合     

Formation of epitaxial SiC nanocrystals

Epitaxial 3C-SiC grains are formed at 1190 °C in the top region of silicon, when Si wafers coated by SiO₂ are annealed in CO atmosphere. The formed SiC grains are 40-50 nm high and 100 nm wide in cross-section and contain only few defects. Main advantage of the method is that the final structure is free of voids.The above method is further developed for the generation of SiC nanocrystals, embedded in SiO₂ on Si, and aligned parallel with the interface. The nanometer-sized SiC grains were grown into SiO₂ close to the Si/SiO₂ interface by a two-step annealing of oxide covered Si: first in a CO, than in a pure O₂ atmosphere. The first (carbonization) step created epitaxial SiC crystallites grown into the Si surface, while the second (oxidation) step moved the interface beyond them. Conventional and high resolution cross-sectional electron microscopy showed pyramidal Si protrusions at the Si/SiO₂ interface under the grains. The size of the grains, as well as their distance from the Si/SiO₂ interface (peak of pyramids) can be controlled by the annealing process parameters. The process can be repeated and SiC nanocrystals (oriented in the same way) can be produced in a multilevel structure.     

用三角形闪耀光栅实现分束器

用闪耀光栅实现了光栅分束器。给出了该分束器衍射光强分布的解析表达,讨论了影响分束性能的各种因素,并把复杂的优化设计问题转变为简单的求条件极值问题,使编程简单,计算速度快。数值模拟表明,当分别扇出2束和4束光时,衍射效率可分别达到92.50%和95.75%,扇出光束能量均匀,各级衍射效率的方差分别在10-5和10-6的数量级。与其它分束器进行了比较。     

Fabrication of pellicle beam splitters for optical bus application

The optical bus architecture for on-board applications requires a number of optical splitters with precise split ratios to route part of the input signal. Since hollow metal waveguide provides well collimated beams with very small gap loss, it opens the possibility of inserting discrete optical beam splitters (taps). The optical tap requires low excess loss, polarization insensitivity, temperature stability, minimized walk-off of the propagating beam, and cost effective manufacturing. By benefiting from the mature interference coating technology for polarization insensitivity and temperature stability, we design a pellicle beam splitter based on a static microelec tro-mechanical system (MEMS) and develop processes to fabricate pellicle splitters using wafer level bonding of silicon and glass substrates, with subsequent thinning to 20 μm. With the approaches described in this paper, we have demonstrated optical beam splitters with excess loss of less than 0.17 dB that operate at a data rate of 10 Gb/s showing a clean eye diagram while providing controlled split ratio and polarization insensitivity. We have demonstrated a high yielding MEMS based silicon processing platform which has the potential to provide a cost effective manufacturing solution for optical beam splitters.     

Synthesis of nano-sized SiC precipitates in Si by simultaneous dual-beam implantation of C+ and Si+ ions

Nanometer-sized SiC precipitates were synthesized in situ in Si by simultaneous implantation of two ion beams of C⁺ and Si⁺ ions. The results of simultaneous dual-beam implantation are compared with those of sequential dual-beam ion implantation and of single-beam C⁺ ion implantation. Remarkable differences are observed regarding the content and the crystal quality of SiC precipitates as well as the defect structure of the Si substrate. The SiC precipitation during dual-beam synthesis is found to depend on the ion energy of the second beam and on the implantation mode, simultaneous or sequential. For suitable implantation conditions, simultaneous dual-beam synthesis can improve the in situ SiC formation in comparison to the single-beam synthesis. A higher density of SiC precipitates with better crystal quality was observed, whereas their size was not changed. The second ion beam enables a shift in the dynamic equilibrium of constructive and destructive processes for SiC formation. A model is proposed assuming that SiC precipitation preferentially proceeds in regions with vacancy defects. The implantation process itself creates vacancy-dominated and also interstitial-dominated regions. The balance of the local point-defect composition is shifted under the second ion beam. In this way, the conditions for SiC precipitation can be modified. Received: 18 February 2002 / Accepted: 17 May 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +49-351/260-3411, E-mail: koegler@fz-rossendorf.de     

Polarization-independent self-collimating bends and beam splitters in photonic crystals

Polarization independent bends and beam splitters for transverse electric (TE) and transverse magnetic (TM) polarizations have been demonstrated in two-dimensional (2D) photonic crystals (PhCs). In virtuel of equi-frequency contour analysis and finite-difference time-domain calculations, self-collimation behaviors for TE- and TM-polarizations are achieved at the same frequency. Simulation results show a 90-degree bend with 90% efficiency and beam splitters with about 96% total efficiency for both TE- and TMpolarizations, where the light is self-guided by the self-collimation effect. Such bends and beam splitters are expected to play important roles in optical devices where polarization insensitivity is needed.     

Harmonic emission from the rear side of thin overdense foils irradiated with intense ultrashort laser pulses

The harmonic emission from thin solid carbon and aluminum foils, irradiated by 150 fs long frequency-doubled Ti:sapphire laser pulses at lambda=395 nm and peak intensities of a few 10(18) W/cm(2), has been studied. In addition to the harmonics emitted from the front side in the specular direction, we observe harmonics up to the 10th order, including the fundamental from the rear side in the direction of the incident beam, while the foil is still strongly overdense. The experimental observations are well reproduced by particle-in-cell simulations. They reveal that strong coupling between the laser-irradiated side and the rear side occurs via the nonlocal electron current driven by the laser light.     

Hyperfine polarization and its normal gradient coefficient of (87)Rb atoms in the vicinity (approximately 10(-5) cm) of coated and uncoated Pyrex glass surfaces

We have made regionally specific measurement of the hyperfine polarization of 87Rb atoms in the vicinity ( approximately 10(-5) cm) of coated and uncoated Pyrex glass surfaces. We find that the polarization near an uncoated surface decreases rapidly with decreasing distance from the surface whereas for a silicone-coated surface the polarization is independent of the distance from the surface. We have also determined the normal gradient coefficient micro (S.I) of the hyperfine polarization in uncoated cells. In a representative uncoated cell, at a Rb density 7.35 x 10(13) cm(-3) and a pump beam intensity 1.3 W/cm(2), we find micro(S.I)=24+/-7 microm(-1).