Positron annihilation in diamond,silicon and silicon carbide

Recent positron lifetime and doppler broadening results on silicon, diamond and silicon carbide are presented in this contribution. In as-grown Czochralski Si ingols vacancies are found to be retained after growth at concentrations typically around 3×10¹⁶/cm³. 10 MeV eleciron irradiation of variously doped Si wafers shows that only high doping concentrations well in excess of the interstitial oxygen concentration causes an increase in the amount of monovacancies retained.In porous silicon very long-lived positronium lifetimes in the range 40–90 ns are found. Polycrystalline diamond films contain various types of vacancy agglomerates but these are found to be inhomogeneously distributed from crystallite to crystallite. Electron irradiation of silicon carbide results in two vacancy-related lifetimes which are interpreted as resulting from carbon and silicon vacancies.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Positron and deuteron depth profiling in helium-3-implanted electrum-like alloy

In spite of previous extensive studies, the helium behavior in metals still remains an issue in microelectronics as well as in nuclear technology. A gold-silver solid solution (Au₆₀Ag₄₀: synthetic gold-rich electrum) was chosen as a relevant model to study helium irradiation of heavy metals. After helium-3 ion implantation at an energy ranging from 4.2 to 5.6 MeV, nuclear reaction analysis (NRA) based on the ³He(d,p)⁴He reaction, was performed in order to study the thermal diffusion of helium atoms. At room temperature, NRA data reveal that a single Gaussian can fit the He-distribution, which remains unchanged after annealing at temperatures below 0.45 of the melting point. Slow positron implantation spectroscopy, used to monitor the fluence dependence of induced defects unveils a positron saturation trapping, which occurs for He contents of the order of 50-100 appm, whereas concentrations larger than 500 appm seem to favor an increase in the S-parameter of Doppler broadening. Moreover, at high temperature, NRA results clearly show that helium long range diffusion occurs, though, without following a simple Fick law.     

On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon

14 cm^-3 in FZ-Si was obtained. Received: 2 June 1998 / Accepted: 20 November 1998 / Published online: 24 February 1999     

Positron annihilation studies on the migration of deformation induced vacancies in stainless steel AISI 316 L

Positron lifetime measurements were carried out at room temperature before and after isochronous annealing of cylindrical, machined fatigue specimens and of round slabs of austenitic stainless steel AISI 316 L deformed in compression. Annealing experiments are evaluated in terms of vacancy migration and sinking to grain boundaries and dislocations. The model assumes spherical grains with a homogeneous initial distribution of vacancies. A vacancy migration enthalpy of H^M _V=(0.9±0.15) eV was found. It is concluded that positron trapping at dislocation lines does not significantly contribute to positron lifetime measurements at room temperature and that single vacancies are the dominating positron traps. Positron annihilation depth profiling on cross-sectional areas prepared from machined specimens using a positron microprobe with 10 μm spatial resolution shows that machining of cylindrical specimens creates vacancies up to 5 mm below the surface. Received: 11 August 2000 / Accepted: 13 November 2000 / Published online: 28 February 2001     

Positron lifetimes for neutron-irradiated C60

The neutron-irradiation effects on C₆₀ fullerite powder were studied by positron lifetime spectroscopy. Below 0.5 ns, a single lifetime of 382±1 ps was found for the unirradiated annealed sample and two components were resolved after neutron irradiation with a dose of 2×10¹⁶ n/cm². Possible origins of these components are briefly discussed.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Positron-lifetime study of vacancy annealing in neutron-irradiated GaAs

Positron-lifetime measurements have been used to study the annealing of vacancies in neutron-irradiated GaAs. The vacancies which are interpreted as defects in the Ga sublattice disappear in a single annealing stage (at 500°C in GaAs doped with Si or Zn, and at 600°C in Cr-doped GaAs).     

Color centers in neutron-irradiated Y3Al5O12, CAF2 and LiF single crystals

The thermal annealing behavior of the Y₃Al₅O₁₂, CaF₂ and LiF single crystals bombarded at Algiers with reactor neutrons has been monitored by optical absorption spectroscopy. The irradiation was performed at about 315 K. On heating samples after irradiation, the optical absorption bands decrease and disappear completely at 873 and 523 K in the case of Y₃Al₅O₁₂ and CaF₂, respectively. Activation energies of 1.2±0.02 and 0.9±0.2 eV are estimated for Y₃Al₅O₁₂ and CaF₂, respectively. On the other hand, the LiF crystal shows a complex annealing behavior. Here, the optical absorption spectrum presents different shapes after each annealing temperature. Four steps are distinguished and discussed on heating samples from 300 to 673 K. Above 673 K, the absorption drops by about 50%; it completely disappears at 773 K.     

Positrons and electron-irradiation induced defects in the layered semiconductor InSe

The positron annihilation characteristics of the layered semiconductor InSe have been investigated. No evidence for low temperature positron trapping is found in as-grown and heavily deformed InSe. The temperature dependence of the S-parameter in these sample exhibits an increase rate in good agreement with the linear expansion coefficient along the c-axis. The positron lifetime spectra of electron-irradiated 0.01% Sn-doped InSe show a long-lifetime component of 336 ps which is tentatively attributed to positrons trapped at isolated In vacancies. Isochronal annealing experiments performed on these samples show that the recovery of the positron lifetime measured at 77K is accomplished in two stages. The first, starting after annealing at 150K, could be induced by the formation of complexes (V_In-Sn_In). The second stage, observed at temperatures T375K, is attributed to the dissociation of these complexes and subsequent annealing of the In vacancies.     

Status of an R&D project of a positron gun at “Horia Hulubei” NIPNE Bucharest

A new positron gun (PG) will enable high sensitivity measurements in applications of positron annihilation spectroscopy in Romania. Some data concerning the design of a modular system for focussing, transport and acceleration of mono-energetic positrons in the range 0.8-50 keV have been obtained and experimenting on moderators and CDBS was performed. We present a short overview of the present status of the project and preliminary results from Coincidence Doppler Broadening Spectroscopy with a ²²NaCl source, on Al samples. The entire positron gun system will be designed as a high-vacuum dedicated extension operating with two options: a 50 mCi ²²NaCl source and in-line with the NIPNE cyclotron or a new intense compact cyclotron.     

Damage depth-profiling of Au+ and O+-irradiated amorphous PEEK by monoenergetic positron beams

+ and O⁺ ions was exposed to positron beams to measure the positron annihilation Doppler broadening as a function of the positron energy. As in the previous case of O⁺-irradiated semicrystalline PEEK, the annihilation lines recorded at relatively low positron energies became broader with increasing irradiation dose. The thickness of the damaged layer estimated from the positron data was compared with the mean depth of the implanted ions calculated by the TRIM code. For the Au⁺-irradiated samples, some discrepancy was observed between the two quantities. Received: 6 March 1996/Accepted: 19 November 1996     

Slow positron annihilation studies of vacancy-type defects in the near-surface region of Cu and Nb before and after wear

Received: 22 June 1998 / Accepted: 9 November 1998     

Hydrogen-related donor in silicon crystals grown in a hydrogen atmosphere

Neutron transmutation doped (NTD) silicon crystals grown in a hydrogen atmosphere have been investigated by infrared absorption spectroscopy at a low temperature (10 K). An effective-mass-like donor state HD^0/+ has been found at 110.8 meV below the conduction band bottom after rapid thermal annealing (RTA). The HD^0/+ formation mechanism after NTD and RTA is briefly discussed, and tentatively attributed to H atoms present in the vicinity of some residual irradiation defects, like a complex of a H atom and a H-saturated vacancy.     

Determination of defects in 6H-SiC single crystals irradiated with 20 MeV Au ions

In this paper, the determination of the defects induced by 20 MeV Au irradiations in hexagonal silicon carbide single crystals is discussed. The evolution of the irradiation-induced defects as a function of the ion fluence has been studied as a function of depth below the surface using 0.5-25 keV positron beam based Doppler annihilation-ray broadening spectrometry. Results show the detection of two different kinds of defects, depending on the ion fluence.     

Positron annihilation in solid,liquid and undercooled melts of Co80Pd20

Positron annihilation measurements have been performed in solid, liquid and undercooled Co₈₀Pd₂₀ alloy using electromagnetic levitation as containerless processing method. The formation enthalpy for a single vacancy is H_1v = (1.7 ± 0.1) eV. In the melt, the thermal expansion continues linear in the undercooled phase and is larger than that of the solid alloy. The mean free volume in the liquid phase is slightly larger than the volume of a single vacancy. At the Curie temperatures of both solid and liquid phase, the S-parameter indicates no effect on the atomic structure. Different H₂ concentrations in the processing gas atmosphere have no detectable influence on the data.     

Hydrogen indium vacancy complex VInH4 in n-type InP studied by positron-lifetime

Positron-lifetime experiments have been carried out on two undoped n-type liquid encapsulated Czochralski (LEC)-grown InP samples with different stoichiometric compositions in the temperature range 10-300 K. For temperatures below 120 K for P-rich InP and 100 K for In-rich InP, the positron average lifetime began to increase rapidly and then leveled off, which was associated with the charge state change of hydrogen indium vacancy complexes from (V_InH₄)⁺ to (V_InH₄)⁰. This phenomenon was more obvious in P-rich samples that have a higher concentration of V_InH₄. The transformation temperature of approximately 120 K suggests that the complex V_InH₄ is a donor defect and that the ionization energy is about 0.01 eV. The ionization of neutral V_InH₄ accounted for the decrease of the positron average lifetime when the sample was illuminated with a photon energy of 1.32 eV at 70 K. These results provide evidence for hydrogen complex defects in undoped LEC InP.     

On the formation of defect clusters in neutron-irradiated Si

The formation of radiation-induced defect clusters in neutron-irradiated silicon have been studied by solving the semilinear parabolic reaction-diffusion coupled equations. It is found that most of primary displacement defects (interstitial and vacancy) would be annihilated by direct I–V recombination in an extremely short time, and a lot of divacancies would be formed meantime. In particular, the production of 4-vacancy defects is independent of the concentration of sinks and impurities in the sample, and of the energy of recoil particles. The threshold energy of vacancy cluster formation has also been investigated. The results are discussed and compared with experiment observations.     

Positron annihilation in vacancies at grain boundaries in metals

The behavior of vacancies in selected coherent grain boundaries (GBs) in Fe and Ni is studied by means of molecular dynamics simulations. Corresponding positron lifetimes are calculated using the atomic superposition method. There is a difference between the vacancy behavior in Fe and Ni in dependence on temperature. In Ni, vacancies at GBs appear to diminish substantially their free volume (and lifetime) with the increasing temperature, which can be attributed to ‘vacancy delocalization’. Contrary, GB vacancies remain stable up to apparently higher temperatures in Fe.     

Useful vacancies: Positron beam interrogation of fluorine-vacancy complexes in semiconductor device structures

The formation, migration and agglomeration in silicon of fluorine-vacancy complexes have been monitored by single-detector Doppler broadening spectroscopy. After electronics engineers found that fluorine ion implantation effectively eliminated the transient-enhanced diffusion of dopants in the creation of ultra-shallow junctions, a vital step in the further miniaturization of device structures, positron beams have played a pivotal role in providing an insight into the mechanisms underlying this phenomenon, being able to detect FV complexes in implanted and annealed samples. Secondary Ion Mass Spectrometry has provided complementary information on fluorine concentrations so that the nature of the F_mV_n complexes can be further assessed. New results on Si and SiGe structures are presented.     

Spatial stability of a homogeneous system of voids under cascade damage

We consider the microstructural evolution of a system consisting of voids and sessile interstitial clusters continuously produced by irradiation. The stability of the evolution is rigorously analyzed, assuming spatial homogeneity as represented by a mean-field formulation. It is found that, in fully annealed pure metals with a sufficiently low void growth rate, the development of a spatially homogeneous microstructure is unstable. In fact, heterogeneous development already takes place during the void nucleation stage. The characteristic scale of the developing heterogeneity and its temperature dependence are obtained from the analysis, and are found to be consistent with experimental observations. Received: 21 March 2001 / Accepted: 30 May 2001 / Published online: 30 August 2001     

Depth-dependent positronium formation in γ-irradiated polymers after 30-month aging

Depth-dependent positronium (Ps) formation and annihilation study of Co-60 γ-irradiated polyethylene and polytetrafluorethylene were performed. After 30-month aging, no free radicals effect on Ps formation was detected for the studied polymers. Efficient trapping of back-diffusion positrons was observed in heavily irradiated samples, where Ps formation probability near polymer surface and in the bulk turns to be equivalent to each other. Results shown that positron annihilation Doppler broadening in polytetrafluorethylene is prevailingly influenced by high momentum electrons of fluorine atoms instead of Ps intensity.