Dislocation etching in V3Si

Dislocations in as-grown and in plastically deformed V₃Si single crystals have been studied by chemical etching. In as-grown crystals dislocations are partly arranged in small-angle boundaries parallel to {001}, {011}, and {112} planes. The total dislocation density amounted to (10⁵−10⁶) cm⁻². After plastic deformation at elevated temperatures indications for slip and climb processes were observed. The dislocation density increased to 10⁷ cm⁻².     

TEM-Untersuchungen von Gitterfehlern in ZnSiP2-Einkristallen

Results are dealt with concerning TEM investigations of lattice defects in ZnSiP₂ single crystals. After the crystal growth dislocations or stacking faults were found in a few cases only. More frequently twins were present in the microstructure. The crystallographic elements of twinning are {112} 〈111〉. After plastic deformation by bending at 900 °C local dislocation arrangements with high defect density (N_v ≈ 10⁶…︁ 10⁷ cm⁻²) were observed. By means of the diffraction contrast one Burgers vector b = 1/2 〈111〉 could be identified. In some cases the crystals also contained wide deformation stacking faults, which were limited by partial dislocations. The density of twins was not increased under the conditions of deformation reported here. As it can be concluded from investigations of Oettel et al. and from the results of the twin analysis, slip and generation of stacking faults take place on {112}-planes in ZnSiP₂ crystals. Crystallographic considerations on both processes are dealt with.     

Zum Nachweis von Versetzungen in β-Kupferphthalocyanin-Einkristallen

An etching technique was developed to investigate dislocations in β-copper phthalocyanine single crystals. Considering the expected content of dislocations and the etch pit symmetry the symmetric etch pits are correlated to [010]-edge dislocations on {201 }- and {001}-lattice planes with (001)- and (201 )-slip planes. Asymmetric etch pits on {001}- and {201 }-planes are connected with [010]-edge dislocations related to (100)- and (101 )-slip planes. The dislocation density on growth planes and cleavage planes is commonly lower than 100 cm⁻². [010]-screw dislocations are not observed, but their existence could not be excluded.     

Defect Structure of Strained Heteroepitaxial In(1—x)Al(x)P Layers Deposited by MOVPE on (001) GaAs Substrates

Weak-beam, large angle convergent beam electron diffraction and high resolution transmission electron microscope experiments have revealed, that after strain relaxation due to plastic deformation dislocation networks can be observed in In_(1—x)Al_(x)P heteroepitaxial layers grown on (001) GaAs substrates under compressive stress. The 60° slip dislocations are mostly dissociated into partials of Shockley type whereas in the particular case of layers grown under tension twins are predominantly formed by successive nucleation and slip of 90° Shockley partials on adjacent {111} glide planes lying inclined to the (001) surface. When a few 90° Shockley partials pile up during extension of twins, then planar incoherent twin boundaries with {112} coincidence planes have been formed during strain relaxation. Due to the space group symmetry ((InAl)P belongs to the space group F4-3m) there is a striking asymmetry in defect formation, i.e. defect nucleation and slip on the planes (111) and (1-1-1) slip of the [1-10] zone are preferred to nucleation and slip on the {111} planes of the [110] zone. Apparently, the occupacy of the atomic sites in the dislocation core with either group-III or group-V atoms is responsible for this behaviour. The nature of the defects implies that their spontaneous nucleation should have taken place at the growing surface. Under tensile strain the 90° Shockley partial is nucleated first and the 30° one trails. Under compressive strain this sequence is reversed. It is evident, for dissociated dislocations lying at the interface always the 30° partial, i.e. the partial with less mobility or with higher friction force, is detained near or directly in the interface. Thus, in layers grown under tension the stacking fault associated with the dissociated 60° dislocation lies inside the GaAs substrate. For layers grown under compression it is located inside the ternary layer.     

Stacking faults in semi‐polar 6H‐SiC single crystals

6H‐SiC single crystals have been successfully grown on (1015) plane seed by sublimation method. High density stacking faults (SFs) were observed by transmission synchrotron radiation X‐ray topography. Based on the invisibility criteria of stacking faults, the displacement vectors of most SFs were determined to be the type of 1/6[1120]. Laser scanning confocal microscopy (LSCM) was used to observe the etching morphology of (0115) wafer. The etching steps of SFs were found and their density decreased from 3.6×10³ cm^‐1 to 2.0×10² cm^‐1 along the <0001> projection direction. The inclination angles of the SFs etching step plane to (10‐15) plane were measured by line scanning of LSCM. It was found that the inclination angles decreased from 20° to 10° along the <0001> projection direction. Different etching characteristics of SFs along radial direction of 6H‐SiC (1015) wafer should be attributed to different displacement vectors and different stacking fault energies for these stacking faults. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of Stressed State Type on Work Hardening and Evolution of Dislocation Structure in Magnesium Single Crystals

The type of stressed state (compression, simple shear) is shown to effect the parameters of a work hardening curve for Mg single crystals under basic slip. The electron-microscopic results for the dislocation structure are indicative of the fact that work hardening at stage A of the work hardening curve is connected with the basis-basis dislocation interaction, while the to-B-stage transition and a rapid growth of strain stress are due to the interaction between basic dislocations and “forest” dislocations in the {101 0} {112 0} systems, the latter dislocations arising from the stress relaxation in the primary slip system.     

On the delay of thermally activated motion of pyramidal dislocations in zinc

The effect of shear stress and temperature on the delay time, t_i, of thermally activated motion of dislocations in the {112 2} 〈112 3〉 slip system in Zn single crystals is studied. The delay is associated with a higher density of crystal defects at the initial path of dislocation motion.     

Macroscopic localization of plastic flow in zinc single crystals oriented for basal slip

The patterns of plastic-flow localization in hcp Zn single crystals oriented for slip in the {0001} 〈2110〉 systems are investigated. The main spatial and temporal regularities of the flow localization are established for all portions of the three-stage curve of such crystals. The relationship between the type of localization patterns and the regularities of strain-hardening of single crystals is traced for each stage. The role of the kinking in the formation of the observed macroscopic-flow distributions is estimated.     

Growth‐Sector Boundaries and Growth‐Rate Dispersion in Potassium Alum Crystals

Crystals of potassium alum, pure and slightly doped with Cr³⁺, were grown from aqueous solution by slow temperature lowering. In addition, short re‐dissolution periods were introduced in order to provoke growth defects and changes of growth rates. Crystal slices of about 1 mm thickness were studied by conventional LANG X‐ray diffraction topography using MoKα radiation. For Cr‐doped crystals, boundaries between {100}, {100} and {111} growth sectors appear by pronounced dynamical X‐ray topographic contrast similar to that of stacking faults. Re‐dissolution experiments provoke the formation of inclusions on {100} faces, followed by an increase of the {100} growth rate by the factor of about six, relative to the neighboured {111} faces. X‐ray topographs show that this increase is correlated with the formation of dislocations, which interestingly have pure‐edge character. During further growth these dislocations penetrate the {100}‐{111} growth sector boundary and vanish from the {100} face, which slows down and finally adopts its former growth rate before re‐dissolution.     

The geometry of fractures caused by cleavage of α-Al2O3 single crystals

The possibibity of the existence of cleavage in α-Al₂O₃ single crystals has been estimated by elementary structural considerations and has been shown that the {101 } and {112 0} planes are the more probable cleavage planes. The values of the fracture surface energy measured by Wiederhorn and the estimates of the surface energy made by Hartman confirm this conclusion. In crystals with small numbers of blocks and dislocations and low residual stress we really found a perfect cleavage along the {101 1} and {112 0} planes. Therefore the existence of the cleavage is defined by the crystal imperfection. It has been shown in what way the orientation of crystals can be visually determined from the direction of cleavage steps.     

Evidence of slip in calcium fluoride single crystals

Natural single crystals of calcium fluoride have been cleaved along (111) planes and the cleavage faces have been etched in 0.2 N nitric acid solution. Etching produces rows of equally spaced etch pits running in <110>directions. One-to-one correspondence of glide bands has been established on the matched faces and on the three different flakes of the same crystal. This is further confirmed by studying the rosette structure produced on a (111) cleavage plane by indenting that plane itself. The active slip planes are found to be {110}. The implications are discussed.     

Dislocations and dislocation reduction in space grown GaSb

The behaviour of dislocations in GaSb crystals grown in space both from a stoichiometric melt (floating zone method, FZ) and a Bi solution (floating solution zone, FSZ) respectively, is studied. Predominantly straight 60° dislocations with Burgers vectors of the type b = a/2 <110> in (111) glide planes are identified. In the 20 mm long FZ single crystal the linear growing out of the dislocations is observed which reduces the dislocation density in the centre of the crystal to values below 300 cm^–2. The Bi incorporation in the FSZ crystal results in a misfit between seed and grown crystal and in a network of misfit dislocations at the interface. Thermocapillary convection during growth as well as the surface tension may be the reasons for the presence of curved dislocations and the higher dislocation density within a 1 – 2 mm border region at the edges of both of the crystals. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Evaporation Model of NaCl Cleavage Faces around Edge Dislocations in Vacuum

It is shown in the present paper that the evaporation of edge dislocations in the form of circular steps takes place in NaCl crystals by the evaporation of these steps in a high vacuum and in a temperature region of 350–500°C. The distances of steps are regular. This regularity is explained by means of a suggested model. This model explains also the change in the evaporation rate depending upon the density of dislocations. This explanation is based on the existence of an effective charge at the emergence point of the edge dislocations a/2 〈110〉. {110} with the surface planes {100}. This charge interacts with another one formed on the faults of steps. As a result of this interaction a modulation is observed of the formation of a new step in the emergence point. This means that the same is observed in the case of step distances too.     

TEM Investigation of Dislocations in RNi2B2C (R = Y,Tb, Ho,Er, Y0.6Tb0.4, Er0.8Tb0.2)

To evaluate the influence of different rare earth metals on dislocation type and stacking fault occurrence in RNi2B2C compounds samples with R = Y, Tb, Ho, Er, Y_0.6Tb_0.4 and Er_0.8Tb_0.2 were investigated. As a result of the TEM analysis the parameter decisive for the lattice defects in these compounds is not the type of components but the annealing treatment of the samples. In well homogenized material the dominant Burgers vector of perfect dislocations was <100] and stacking faults are hardly found. In inhomogeneous samples the dominant Burgers vector was <110] and the perfect dislocations often lie in the planes of the numerous stacking faults. In both types of materials the experimental results hint at the existence of two different slip systems.     

AFM study of the surface morphology of the {100} cleavage planes of L‐arginine phosphate monohydrate single crystals

Surface morphology of the {100} cleavage planes of L‐arginine phosphate monohydrate single crystals grown from aqueous solutions is described and discussed. Different from the previous studies, dislocations are not frequently detected and most of them don't have hollow cores on the emergence points. Various step patterns are also described. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Microplasticity of CsI crystals

The study of the mechanisms of plastic deformation of CsI crystals has found the participation of not only the main {110} 〈100〉 slip system but also of the secondary one {110} 〈110〉. Besides that, production and motion of point defects (or small prismatic loops) take place. The gliding on secondary slip system and the deformation accounted for by the generation and motion of point defects is facilitated at low temperatures and high deformation rates. The character of the motion and multiplication of dislocations in the main slip system is investigated. From the temperature and stress dependence of the mobility of isolated dislocations quantitative data on the thermally activated motion of edge dislocations on the main slip system have been obtained. It is shown that, as in the case of other alkali halides, the thermally activated motion of edge dislocations in CsI crystals on {110} 〈100〉 system is limited by their interaction with local obstacles.     

Frequency resolved photoconductivity of bulk CdS single crystals

Photoconductivity measurements in CdS single crystal showed that a.c. photoconductivity decays as ω^−s, with s value - {1 + α} for ω > 1/τ and - {1–α} for ω < 1/τ. At low frequency values, recombination might be controlled by monomolecular behaviour. As the frequency increases bimolecular behaviour, in shallow states, dominates. Direct recombination is found to be weak dependent on both the intensity and applied voltage. However when band tail recombination is dominant (at higher frequencies), strong dependence is observed.     

Precipitation of intermetallic phase in Zn‐Ti alloy single crystals

Pure and 0.14 at.%Ti alloyed Zn single crystals have been grown by the Bridgman technique. The alloyed crystal exhibits a sheet‐like precipitation structure parallel to the basal plane of the hexagonal solid solution Zn‐Ti matrix. The tetragonal precipitates are intermetallic compounds of Zn₁₆Ti composition. They are needle‐shaped with the needle axis peferentially aligned along the <a> axis. The approximate orientation relationship between precipitate and matrix is (0001)<11$\bar 2$ 0>_Matrix||(010)[001]_Zn16Ti. To study the influence of alloying on the mechanical properties, the critical resolved shear stress for basal slip has been measured in compression at different temperatures and strain rates. It is shown that the critical resolved shear stress can be very well explained by theories of solid solution and precipitation hardening. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Deformation Modes and Structure Evolution in Laser‐Shock‐Loaded Molybdenum Single Crystals of High Purity

This paper reports on the microstructural changes occurring within molybdenum single crystals after shock treatment with an excimer laser‐system in a confined ablation mode with different number of impacts. Using different complementary investigation methods (optical microscopy, scanning electron microscopy and transmission electron microscopy) it is found that slip and twinning are active modes of deformation during the shock‐induced plastic deformation. After laser treatment with a single laser pulse slip bands on {112} planes containing several microscopic twins are the dominating microstructural feature, whereas further laser‐shock‐processing leads to the formation of a homogeneous arrangement of screw dislocations, tangles and loops. Deformation modes and microstructure in laser shocked samples prove to be quite similar to those of explosive shocked specimens although the laser‐induced peak pressure is about an order of magnitude lower than that during explosive loading.It is shown that the laser shock‐induced hardening increases with increasing number of impacts in the range from 1 to 6 impacts. This shock‐induced strengthening is correlated with the overall dislocation density.     

Work‐hardening characteristics of Zn‐Ti alloy single crystals

Shear stress – shear strain curves of 0.14 at.%Ti alloyed Zn single crystals were measured in compression at different temperatures and shear strain rates. The work‐hardening coefficient for basal slip increases with decreasing temperature and increasing shear strain rate. The work‐hardening characteristics are compared with those reported for Zn single crystals with different constituents and purities. It is discussed with respect to the interaction of dislocations with dislocations, vacancies, vacancy agglomerates and solute atoms. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)