The frequency distribution of the threshold voltage of bistable Cu2O switching devices

The frequency distribution of the threshold voltage of Ag Cu₂O Ag switching devices was experimentally established. With a few switching cycles (n ≲ 150) distribution can be interpreted by a numerical Gauss distribution. Only a single, from electrode to electrode uninterrupted, channel is optically provable. A numerical Gauss distribution is usually no longer observed with a large number of switching cycles. The entire frequency distribution, however, is composed of several partial collectives which can be individually considered as normal distributions. These contribute in differing degrees to the total frequency distribution. Several switching channels can be optically proved. The channels and the normally distributed partial collectives were allocated to one another.     

Phase lead determined growth of 〈100〉 — textured germanium crystallites in eutectic Ag?Ge alloys

Al Si type eutectics (Al Si, Ag Si, Ag Ge, Zn Ge) form 〈100〉 — textured eutectic dendrites of the semiconductor phase when a certain growth rate R and liquid temperature gradient G are held. The spacings of these eutectic dendrites λ follow the relationship: λ = (r_λ ≈︁ 0.2; g ≈︁ 0.5). The exponents of this relationship can be explained by the model of phase lead determined growth. This model is based on the consideration of the analogy to dendrite growth. The Al Si type eutectics have geometrically similar morphologies for determined G^x/R-relations (x = 1.25 in the case of Ag Ge) and the relation λ²R = const. is valid. In this paper the Ag Ge eutectic will be discussed in close detail.     

Investigation of the surface composition changes caused by Ar+-, N+2- and He+-Ion bombardment of Cu?Ni and Ag?Pd alloys using auger electron spectroscopy

The selectivity of the sputtering process of Cu Ni and Ag Pd alloys with different bulk compositions during Ar⁺-, N⁺₂- and He⁺-ion bombardment was studied by the help of Auger electron spectroscopy. It was found that for Cu Ni alloys a Ni-enrichment and for Ag Pd alloys a Pd enrichment takes place compared with bulk composition. The selectivity of the sputtering process decreases with decreasing sputtering ion mass. This result was explained in the case of Cu Ni alloys on the base of the dependence of elemental sputtering coefficients on the sputtering ion mass.     

Microstructure and spacings of directionally solidified metal-semiconductor eutectic alloys

Directionally solidified metal-semiconductor eutectic alloys, representing nonfacetted facetted eutectics, show a variety of microstructures caused by the great differences in semiconductor volume fraction (Zn Ge 7,8 %; Ge ZrGe₂ 98.6 %), the influence of growth rate and temperature gradient at the solid-liquid interface. The Al Si, Ag Si, Ag Ge, Zn Ge, Cu₃Si Si, NiGe Ge, CoGe₂ Ge, Mn₃Ge₂ Ge, FeGe₂ Ge, Mn₁₁Si₁₉ Si, Cu₃Ge Ge, Ge TiGe₂ and Ge ZrGe₂ eutectics habe been investigated. The following three models are applicable for the calculation of the spacings as a function of growth rate and temperature gradient at the solid-liquid interface to certain microstructures: diffusion-determined growth, branchinglimited growth and phase-lead-determined growth.     

Diamagnetism and some peculiarities of interatomic interactions in Cu2Sb

Results are reported for magnetic susceptibility measurements of high purity Cu₂Sb which characterize it as a diamagnetic. The observed anomalies of magnetic susceptibility, electrical resistivity and linear expansion coefficient in the neighbourhood of 370 K verify the existence of a phase transition of nonmagnetic origin in this temperature range. The analysis of the peculiarities of interatomic interaction in Cu₂Sb indicates the covalent character of the bonding. The value of the strength of the Cu Cu and Cu Sb bond is evaluated. It is shown that the Cu Cu bond in the Cu₂Sb compound is the most strong one.     

Growth of USb2 single crystals and their structural perfection

USb₂ single crystals were grown by three methods; I — Chemical vapour transport with iodine as transporting reagent, II — Crystallization from U Sb liquid solution, III — Crystallization from U Sb Sn liquid solution. The morphology of growth and results of X-ray topography examination of crystal surface are given.     

A difference between initial growth stages of the AlGaAs/GaAs and GaAs/AlGaAs heterostructures produced by contact replacement of solutions

The method of liquid epitaxial growth of GaAs/AlGaAs/GaAs heterostructures when the change of solutions occurs due to pushing off one melt by another is discussed. It has been shown theoretically and experimentally that the initial stages of film growth after the change of the binary Ga As melt on the ternary Al Ga As melt differ from that when the Ga As solution pushes off the Al Ga As liquid. The difference is caused by the inequality of the diffusion coefficients of As and Al in a multicomponent Al Ga As liquid (D_Al > D_As). As a result, the growth of an AlGaAs film begins immediately in the case when the Al Ga As solution pushes off the Ga As liquid but in the opposite case the dissolution of an underlying AlGaAs solid is unavoidable and depends little on degree of a saturation of the Ga As washing solution. These peculiarities must be taken into account in discussions of abruptness and other properties of LPE-grown AlGaAs/GaAs and GaAs/AlGaAs heterojunctions.     

Doping of GaAs with Donor Impurities Te and Sn during Liquid Phase Epitaxy from Mixed Gallium ? Bismuth Melts

The electrical properties of GaAs epilayers doped with donor impurities Te and Sn during LPE from mixed Ga  Bi melts in temperature intervals from 850 to 820 °C and from 700 to 630 °C were investigated. The analysis of incorporation of Te and Sn into crystallizing GaAs considering preliminary association of impurity and compound component atoms in the liquid agree satisfactory with experimental data providing the presence of additional concentration of nonequilibrium arsenic vacancies on the (111)B surface of growing layer, which is not conditioned by activity of compound components in the liquid. It is shown that the main factor, determining the incorporation of donor impurities Te and Sn into GaAs during epitaxy from mixed Ga  Bi solvents, is the change of Ga and As concentrations ratio in the liquid.     

Role of Silver on Superconducting Properties of BPSCCO (2223) System

The role of silver for the superconducting properties of the Bi Pb Sr Ca Cu O (2223) system have been investigated systematically. Samples with various concentrations of Ag were prepared by the matrix method. D.C. resistance results showed that T_c(0) varied between 100–109 K for various compositions of Ag. J_c measured at LNT from I–V data shows an increase with silver addition. J_c decreased from 90 Amp/cm² at zero field to 16 Amp/cm² at 100 Oe. The T_c(0) obtained form the susceptibility data agreed with those obtained from resistance measurements. X-ray diffraction results showed that the dominant phase in BPSCCO is the high-temperature (2223) phase and the same is improved in silver added BPSCCO samples. The scanning electron micrographs indicated that silver is precipated along the grain boundaries, separating the superconducting grains. These results have showed that silver addition does not destroy the superconductivity and at the same time enhances the critical current density.     

Bi2Te3 Crystals Heavily Doped with Germanium Atoms

Elemental Bi, Te, and Ge of 5N purity were used to prepare Bi₂Te₃(GeTe) single crystals with germanium content varying from 0 up to 2.3 × 10²¹ cm⁻³. The samples were characterized by reflectivity measurements in the plasma resonance frequency range and by measurements of the electrical conductivity. Germanium content in the samples was determined by means of energy dispersive analysis. The reflectivity spectra were interpreted on the basis of the Drude-Zener theory in the aim to obtain information on the concentration of the free carriers in the samples. It was found that Ge atoms in the Be₂Te₃ crystal lattice behave as acceptors. A comparison of the hole concentration with the amount of germanium built into the crystal lattice revealed that only about 1/100 of the total number of Ge atoms act as acceptors. This effect is explained by two different ways of incorporation of Ge atoms into the Bi₂Te₃ lattice, viz: the formation of substitutional Ge'_Bi defects acting as acceptors and the formation of seven-layer-lamellae of the Te Bi Te Ge Te Bi Te composition, which corresponds to the structure of GeBi₂Te₄.     

Dislocation density in InxGa1–xAs films grown on GaAs substrates with intermediate buffer layer InGaAsP of variable composition

In_xGa_1–xAs films with x = 0.03 and 0.05 were grown from an In Ga As P liquid phase. Because of high value of distribution coefficient of P we have heterojunction GaAs In_yGa_1–yP_zAs_1–x–In_xGa_1–xAs. The influence of Phosphorus atom fraction (X_p) in liquid phase on dislocation density in the top In_xGa_1–xAs layer was studied. It was found that dislocation density (N_d) as a function of X_p is a curve with some minima. The minima of N_d for substrates of (111) A and (111) B orientations are observed in the different intervals of X_p axis. — The width of N_d minimum is decreased if the substrate is misoriented from the (111) plane. — It was supposed that the clusters exist in the liquid phase. On the basis of this assumption one can explain the influence of substrate position over or under the melt on the film perfection. The diameter of these clusters is estimated to be about 500 Å.     

GaP?AlxGa1−xP heterostructure edge coupling waveguides for hybrid integrated optic devices

In this paper we present the performance of GaP Al_xGa_1−xP heterostructure waveguides for integrated optic hybrid devices. The waveguide layer is graded with a parabolic refractive index profile for the light emission of a DH GaAs semiconductor laser. The waveguide heterostructure performed allows to couple at it edge crossection semiconductor laser or photodetector as well as fix or solder them on the same substrate on which the heterostructure layers were deposited. The heterostructure layers were grown by liquid phase epitaxy and the heterostructure waveguide was performed by means of etching technics specially developed for this purpose. Both, the growth procedure, as well as the etching technics are described. The results achieved are shown in curves and photographs, taken on a scanning microscope.     

Transport Coefficients and Structural Principles of PbO?Ga2O3 Melt

More Precise knowledge of the growth mechanism of garnets in form of epitaxial layers or single crystals in high temperature solutions on the base of trivalent oxides Me₂O₃ in PbO B₂O₃ solvent is desirable. Data of physicochemical properties of the melts especially density, shear viscosity, and electrical conductivity and their dependence on the temperature are useful in endeavour to recognize the structural principles of oxidie melts. Therefore as a first step the binary system PbO Ga₂O₃ was investigated to understand the influence of the Ga component on a complete mixed garnet solution, for instance (Y, Sm)₃ (Fe, Ga)₅O₁₂ in PbO B₂O₃ solvent.     

Anomalous Up-and-Down Variation of Positron Lifetime Near Tc in High-temperature Superconductors

The temperature dependence of the positron lifetimes in the polycrystalline high T_c superconducting Y Ba Cu O and Bi Sr Ca Cu O and the non-superconducting Y Ba Cu O have been investigated by using the position lifetime technique. It is found from the experiments that there is an evident temperature dependence for the two kinds of superconducting samples but no temperature dependence for non-superconducting sample. It is important that the anomalous up-and-down variation of positron lifetime near T_c has been observed in the measured superconducting samples. We suggest that this strange temperature dependence of the positron lifetimes near T_C may result from some changes induced by the phase transition.     

Erholung und Rekristallisation des stabilen Austenits bei der Verformung durch Walzen

For the explanation of the processes which take place during a high-temperature thermomechanical treatment (HTTT) in the stable austenite hardness, grain structure and dislocation structure of a Fe 24Ni 0,5C alloy are examined in dependence of the degree and temperature of rolling deformation (ϵ = 13 to 52%; T_v = 830 and 1150°C). The observed structures can be represented by a recovery-recrystallization-diagram, that describes the influence of technological parameters on the recovery and the recrystallization of stable austenite.     

In-situ Observations on Cu-SiO2 and Stainless Steels

Specimens of Cu SiO₂ and of several high purity stainless steels have been observed during deformation in an HVEM. The behaviour of the Cu SiO₂ specimens is dominated by the free surfaces, even in the thickest regions which can be examined, but in the stainless steels it has been found that if the specimen is thicker than about 0.5 μm, bulk behaviour is observed. The formation of ϵ- and α-martensite has been directly observed and essentially identical observations of martensite formation have been made during cooling. It has been shown that ϵ-martensite is always formed in regions where appropriately, but usually irregularly spaced faults, are generated and detailed analyses of isolated and overlapping faults show that these faults contain close-packed planes of the appropriate eph spacing. α-martensite is formed in association with dislocation pile-ups.     

Study of Dislocation Distribution in NaCl?NaBr and NaCl?CaCl2 Crystals Grown from Melt

Dislocation distribution and content have been studied using etch pit method in the single crystals of mixed solids NaCl NaBr and NaCl CaCl₂. In both the solid solutions the dislocation content is higher as compared to that in pure crystals of NaCl and NaBr grown under similar conditions. In mixed crystals of NaCl NaBr the block structure of subgrain boundaries is not observed. The subgrain boundaries are highly fragmentary and the dislocations form arrays running randomly to short distances. In NaCl crystals doped with CaCl₂ dislocation loops and impurity-decorated dislocations are observed. The dislocation content is higher in impurity segregated regions. The impurity decorates both isolated dislocations and subgrain boundaries in calcium-doped crystals. The results are discussed.     

Resistance and Current Density Studies on Plasma Sprayed Coatings of Bi(Pb)?Ca?Sr?Cu?O Superconducting Materials

Plasma spraying is a potential technique for forming flexible tapes from brittle high T_c oxides. It is possible to obtain superconducting Bi(Pb) Ca Sr Cu O coating by suitable heat treatment schedule after spraying. In an effort to get maximum transport current densities (J_c) of the coating, the content of lead and sintering time have been optimised. A J_c value of 200 Amp/cm² is obtained in Bi_1.4Pb_0.6 · Ca₂Sr_1.9Cu₃O_y specimen coated on silver sprayed Fe[(Ag)/Fe] substrate. Remarkable improvement in J_c values up to 694 Amp/cm² is obtained in the same specimen coated on Ca₂Sr_1.9Cu₃O_y sprayed Fe[Ca₂Sr_1.9Cu₃O_y)/Fe] substrate. The observed decrease in J_c(B) curves with increase in magnetic field shows the presence of weak coupling between the grains.     

Electrical switching and thermal studies on bulk Ge-Te-Bi glasses

Bulk, melt quenched Ge₁₈Te_82-xBi_x glasses (1 ≤ x ≤ 4) have been found to exhibit memory type electrical switching behavior, which is in agreement with the lower thermal diffusivity values of Ge-Te-Bi samples. A linear variation in switching voltages (V_th) has been found in these samples with increase in thickness which is consistent with the memory type electrical switching. Also, the switching voltages have been found to decrease with an increase in temperature which happens due to the decrease in the activation energy for crystallization at higher temperatures. Further, V_th of Ge₁₈Te_82-xBi_x glasses have been found to decrease with the increase in Bi content, indicating that in the Ge-Te-Bi system, the resistivity of the additive has a stronger role to play in the composition dependence of V_th, in comparison with the network connectivity and rigidity factors. In addition, the composition dependence of crystallization activation energy has been found to show a decrease with an increase in Bi content, which is consistent with the observed decrease in the switching voltages. X-ray diffraction studies on thermally crystallized samples reveal the presence of hexagonal Te, GeTe, Bi₂Te₃ phases, suggesting that bismuth is not taking part in network formation to a greater extent, as reflected in the variation of switching voltages with the addition of Bi. SEM studies on switched and un-switched regions of Ge-Te-Bi samples indicate that there are morphological changes in the switched region, which can be attributed to the formation of the crystalline channel between two electrodes during switching.     

Hydrogen in Cu?Ti and Ni?Ti Metallic Glasses

The hydrogen solubility and its effect on the crystallization of Cu Ti and Ni Ti glasses were studied by differential scanning calorimetry, thermogravimetry, and X-ray diffraction. Dependence of the crystallization products of the hydrogenated Ti-based alloys on the hydrogen content was found. Whereas in Cu-Ti alloys hydrogenation leads to drastic decreasing in the thermal stability due to phase separation in the amorphous state and to formation of microcrystalline structure during crystallization, in Ni Ti system hydrogen produces hydrides with Ni as well with Ti, which after heat treatment decompose, and finally the same crystalline phases as in unhydrogenated alloy are formed. The isothermal crystallization kinetics of the maximum hydrogenated Cu₅₀Ti₅₀ amorphous alloy was also investigated to obtain additional information about this transformation leading to nano-crystalline material.