C 60掺杂酞菁铜的光电特性及其SERS研究

研究了C60 掺杂酞菁铜 (CuPc)双层光导体的光电特性 ,实验结果表明C60 掺杂后 ,可提高其光电性能。对C60 掺杂酞菁铜的表面增强拉曼光谱 (SERS)研究显示 ,C60 与酞菁铜之间生成了电荷转移较小、结构比较松散的分子间电荷转移复合物。     

自组装ITO/双层磷脂膜的制备及其光电行为研究

在ITO(Indium-tin-oxide)导电玻璃电极上制备上自组装双层磷脂膜和经C60修饰的双层磷脂膜,研究了这种自组装双层磷脂膜的光电行为,考察了偏压、溶液中的给体和受体的浓度对自组装膜光电流强度的影响,讨论了C60分子对光电子跨膜传递过程的促进作用。     

两亲性卟啉-紫精化合物LB膜的结构及光电性质研究

本文制备了两亲性卟啉-紫精化合物的LB膜材料, 用π-A等温曲线、吸收光谱、小角和低角X射线衍射以及扫描隧道电镜(STM)等方法研究了LB膜的结构。结果表明, LB膜内分子排列是二维有序的超晶格结构, 卟啉环在基片上的排列呈"站立"状态。单个分子占有面积为1.15nm^2, 单层高度为2.35nm, 相邻裂间的距离为1.07nm。这种规则有序的两亲性卟啉-紫精化合物呈现出良好的光量子收率和光电响应特性。     

功能性超薄有序分子沉积膜的制备及其结构研究

1991年G.Decher等首次探讨了阴阳离子与聚电解质交替沉积制备有机超薄膜的方法。我们在完善成膜技术和发展成膜基质的基础上,详细研究了其成膜过程与膜的结构,并定义这种新的自组装超薄有序膜为分子沉积膜——MD膜。MD膜是利用阴阳离子的静电吸附反应特性,通过相反离子体系的交替分子沉积制备的层状有序自组装多层超薄膜。需要指出的是,分子沉积既是有机超薄膜的制备技术,本身又是一种自组装超薄有序膜。MD膜制备工艺简单,热稳定性和长期稳定性好,不受基体形状与面积限制。     

酞菁铜阴阳离子分子沉积(MD)膜润湿性研究

酞菁及其衍生物等大环平面分子具有良好的化学稳定性和优异的光电性能 [1,2 ] ,利用酞菁进行模拟生物光合作用的研究 ,以期实现新的光电转换技术 ,近年来已引起人们的广泛重视[3～ 5] .分子沉积(MD)超薄膜[6～ 8] 是以阴阳离子间静电相互作用为成膜驱动力 ,通过相反离子体系的单层交替沉积制备的层状有序超薄膜 .分子沉积技术广泛应用在固体表面改性和生物传感技术等领域 ,沉积分子的物理化学性质是影响其应用的主要因素 .本文通过紫外 -可见光谱跟踪了酞菁铜阴阳离子 MD膜的均匀沉积 ,并根据酞菁 MD膜表面接触角的变化 ,探讨分子端基的…     

BiVO4膜电极的制备及其光电化学性能

以自制的BiVO4纳米粉制备膜电极, 采用电化学方法较系统地研究了退火温度和膜厚对BiVO4膜电极的光电化学行为和电子输运与复合的影响. 结果表明: 退火温度和膜厚对BiVO4膜电极的光电特性有显著的影响. 膜厚为6.75 μm时, BiVO4膜电极具有最佳的光电化学特性. 退火温度低于500 °C时, 膜电极的光电活性随着温度的升高而增强, 至500 °C时达到最大值; 此后膜电极内的体相缺陷明显增加, 导致其光电活性逐渐降低. BiVO4膜电极有良好的可见光光电转换效率, 并利用其单色光转换效率曲线计算得到BiVO4的带隙为2.36eV, 采用莫特-肖特基电化学法测得其平带电位为-0.7 V (vs Ag/AgCl). 上述结果为BiVO4光催化体系的优化提供了重要的参考.     

Al-C60-Al分子结电子输运特性的第一性原理计算

利用基于密度泛函理论的格林函数方法, 计算了Al-C60-Al分子结的电子输运特性. 考虑了C60分子在铝电极表面的原子结构弛豫, 计算结果表明共振传导是Al-C60-Al分子结电子输运的主要特征, 在费米能级附近的电导约为1.14G0 (G0=2e2/h). 投影态密度(PDOS)分析表明, Al-C60-Al分子结的电子输运主要通过C60分子的最低空分子轨道(LUMO)和次低空分子轨道(LUMO+1)进行. 讨论了C60分子和铝电极之间距离的变化对其电子输运特性的影响.     

含C60球两亲分子有序聚集体研究

综合评述了C60两亲分子有序聚集体的形成、结构及聚集体演变规律,介绍了含C60球两亲分子有序聚集体结构的冷冻刻蚀电子显微镜和电子显微镜、小角度中子散射、小角度X光散射、激光光散射以及聚集体结构模型的研究结果.     

螺吡喃类化合物纳米有序组装体系的结构与光致变色研究

利用LB技术制备纳米有序螺吡喃类化合物光信息储存超分子膜,着重研究了螺吡喃类化合物在不同亚相和pH值时的成膜条件和结构之间的关系,并对膜的稳定性,光致变色特性和抗疲劳能力做了较详细的研究。得到一种粒度均匀,分辨率在微米量级的超分子膜,并提出了作为三维贮储光记忆材料时一种写入和非破坏性读出的方法。     

Si(111)-7×7表面上C60多层膜的生长及其纳米摩擦学性质

在超高真空(UHV)条件下,用分子束外延(MBE)方法,通过对生长过程中蒸发速率和衬底温度等参数的控制,可以避免C60分子在Si(111)-7×7重构表面多层生长时团聚岛的形成,得到了逐层生长的C60多层膜.同时利用超高真空扫描隧道显微镜(UHV-STM)对这种多层膜结构进行了观察并对这种现象产生的机理做了分析,测定了不同层数C60薄膜的黏附力和摩擦力曲线,发现分子层数对薄膜的摩擦性质有显著影响,随着沉积层数的增加,样品的摩擦力明显降低,摩擦系数也有降低的趋势.由于分子层数的增加导致C60分子转动程度增强,本文得出结论,摩擦力的降低是由C60分子的转动引起的,C60分子在这里充当了“纳米滚动轴承”,即C60分子的转动为微观结构提供了能量耗散通道.     

长链香豆素LB膜对n-Si/Ni液结上的光致电荷转移的影响

本文研究了由硬脂酸香豆素制得的LB膜对n-Si/Ni电极性能的修饰作用.该LB膜沉积方式是Z型的,成膜之后吸收蓝移(由343nm移至325nm).在60mW·cm^-2溴钨灯光照下,n-Si/Ni/3LB/Fe(CN) /Pt电池的光电转换效率增大了一倍,稳定性亦有明显改善.交流阻抗测量表明,光照使n-Si/Ni/3LB电极的电解电阻大大减小,实验结果表明,硬脂酸香豆素LB膜对n-Si/Ni电极上的光致电荷传递过程的修饰作用是良好的.     

Formation of porous silicon by metal particle enhanced chemical etching in HF solution and its application for efficient solar cells

Porous Si was formed on n-Si wafers, modified with fine Pt particles, by simply immersing the wafers in a HF solution without a bias or an oxidizing agent. The Pt particles were deposited onto n-Si wafers by electrodeposition or electroless displacement deposition. SEM images show that many pores, ranging between 0.1 and 0.8 μm in diameter and covered with a luminescent nanoporous layer, were formed only on the Pt-modified area of the n-Si surface by immersion in 7.3 M HF solution for 24 h. The weight loss of Pt-electrodeposited n-Si wafer was 0.46 mg cm⁻², corresponding to ca. 2 μm in thickness. The weight loss and the structure of porous Si changed with the etching conditions, such as concentration of dissolved oxygen in the HF solution, distribution density of metal particles, and different kinds of metal particles. A photoelectrochemical solar cell equipped with a Pt-particle-modified porous n-Si electrode gave 13.3 mW cm⁻² of maximum output power, which corresponds to a 13% conversion efficiency and is higher than that for the Pt-particle-modified flat n-Si electrode.     

Surface structures, photovoltages, and stability of n-Si(111) electrodes surface modified with metal nanodots and various organic groups

The surface structures, photovoltages, and stability of n-Si(111) electrodes surface-modified with Pt nanodots and organic groups were studied in an I-/I3- redox electrolyte, using alkyls of varied chain length and those having a double bond and ester at the terminal as the organic groups. The n-Si was first modified with the organic groups, and then Pt was electrodeposited on it. Linear sweep voltammetry revealed that, for the modification with alkyls, the overvoltage for the Pt deposition became significantly larger with increasing alkyl chain length, though this does not necessarily hold for the modification with alkyls having a double bond and ester. Scanning electron microscopic inspection showed that the Pt particle density decreased and the particle size increased, with increasing alkyl chain length. The photovoltaic characteristics and stability for the n-Si electrodes modified with the organic groups were much improved by the Pt nanodot coating, though they became somewhat inferior with increasing alkyl chain length. On the basis of these results, it is concluded that surface alkylation at high coverage together with coating with small Pt nanodots gives efficient and stable n-Si electrodes.     

聚苯胺类/n-Si(111)单晶硅复合电极:制备与光电性质

在过氧化月桂酰作用下,于n-Si(111)型单晶硅表面上分别嫁接苯胺及烷基取代苯胺,进而实现晶体硅表面上聚苯胺和烷基取代聚苯胺的原位聚合,制备得到了系列聚苯胺(或烷基取代聚苯胺)/n-Si(111)单晶硅复合电极。此外,对上述合成电极表面苯胺链进行磺化,得到系列磺酸基化的单晶硅复合电极。电化学研究结果显示,聚苯胺直接嫁接于晶体硅表面所得到的复合电极光电转化效率最高,苯胺聚合链通过碳碳双键桥连于单晶硅表面所得到复合电极的光电转化效率高于通过碳碳单键桥连得到的复合电极,但其光电转化效率低于苯胺聚合链直接桥连于晶体硅表面而得到的复合电极。另外发现,苯环磺酸基化有利于提高复合电极的光电转化效率。     

聚马来酸偶氮萘己单酯LB膜对n—Si（100）的光敏化作用

合成了聚马来酸{6-[4-(1-偶氮)-萘氧]己基}单酯功能化合物,并在不同基底(CaF_2,n-Si(100))上沉积其LB膜,利用UV-Vis和IR光谱对膜性质和结构进行了表征.对膜修饰表面的硅片表面光电压谱测试发现,它对单晶硅具有很强的敏化作用.对界面电子过程也进行了初步讨论.     

聚苯胺类/n-Si(111)单晶硅复合电极:制备与光电性质

在过氧化月桂酰作用下,于n-Si(111)型单晶硅表面上分别嫁接苯胺及烷基取代苯胺,进而实现晶体硅表面上聚苯胺和烷基取代聚苯胺的原位聚合,制备得到了系列聚苯胺(或烷基取代聚苯胺)/n-Si(111)单晶硅复合电极。此外,对上述合成电极表面苯胺链进行磺化,得到系列磺酸基化的单晶硅复合电极。电化学研究结果显示,聚苯胺直接嫁接于晶体硅表面所得到的复合电极光电转化效率最高,苯胺聚合链通过碳碳双键桥连于单晶硅表面所得到复合电极的光电转化效率高于通过碳碳单键桥连得到的复合电极,但其光电转化效率低于苯胺聚合链直接桥连于晶体硅表面而得到的复合电极。另外发现,苯环磺酸基化有利于提高复合电极的光电转化效率。     

碱性水溶液中甲醛在硅电极表面的电化学行为及其对硅化学刻蚀的影响

研究了KOH水溶液中氧化剂甲醛在p-Si和n-Si(100)单晶半导体电极表面的电化学行为及其对硅化学刻蚀表面形貌的影响．实验结果表明,甲醛不仅影响p-和n-型半导体电极在碱性溶液中的阳极氧化峰电流,而且在负电位区能在Si(100)电极上发生还原．在光照条件下,p-Si(100)电极上也观测到了HCHO的电化学还原及光电流倍增效应．甲醛在硅电极表面的电化学还原反应分两步进行,反应终产物为甲醇．此外,HCHO能有效抑制碱性溶液中Si表面“金字塔”型表面粗糙颗粒的形成。     

n-GaAs(100)、Si(111)表面修饰卟啉分子的光致界面电荷转移特性的研究

利用表面光电压谱研究了四碘化四-(4-三甲胺苯基)卟啉(TTMAPPIH₂)修饰n-GaAS(100)和n-Si(111)半导体表面的光致界面电荷转移特性,结果表明,n-GaAs(100)表面修饰TTMAPPIH₂分子的光致界面电荷转移效率远比n-Si(111)表面修饰的高,并且发现在该卟啉分子的非吸收区也有明显的光致界面电荷转移现象,而与n-Si(111)间则没有这种转移特性。用电化学测量和UV光谱确定了TTMAPPIH₂相对于n-GaAs(100)、n-si(111)的能级位置关系,对TTMAPPIH₂分子与n-GaAs(100)和n-Si(111)间的不同光致界面电荷转移特性进行了解释。     

The performance of chitosan layer in Au/n-Si sandwich structures as a barrier modifier

This study focused on the structural, optical and electrical features of chitosan organic layer obtained by spin coating technique both on glass and n-Si substrates. XRD results indicated that chitosan has polycrystalline orthorhombic nature. While optical transmittance spectrum of the chitosan organic layer exhibited an increasing tendency in the visible range, band gap energy value was calculated as 4.23 eV for chitosan by UV–Vis spectrometer. Electrical performance of organic chitosan layer in a Schottky device was studied by fabricating of Au/n-Si and Au/chitosan/n-Si devices. The suitability of Au/chitosan/n-Si sandwich devices in optoelectronic applications were tested under dark and illumination conditions. The Au/chitosan/n-Si sandwich device exhibits good photodiode characteristics. Furthermore, the effect of X-ray radiation doses on the electrical properties of the Au/chitosan/n-Si sandwich device was also investigated. In order to get information about electrical characteristics as a function of X-ray radiation doses, Au/chitosan/n-Si sandwich device was exposed to X-ray radiation in same exposure time and various doses. The results highlighted that the performance of the device with chitosan organic interface layer deteriorated with increasing radiation dose. In addition, the transportation mechanism of chitosan based Schottky device was discussed in details.     

Electrochemical and photoelectrochemical deposition and oxidation of cadmium atom layers on the surface of <Emphasis Type="Italic">n</Emphasis>-Si/Te and <Emphasis Type="Italic">n</Emphasis>-Si/CdTe heterostructures

The underpotential deposition and oxidation of cadmium atom layers on n-Si/Te and n-Si/CdTe heterostructures were studied. This process on the indicated electrodes is markedly irreversible. This conclusion is based on the finding that the oxidation of cadmium adatoms on surface tellurium atoms (on elemental cadmium and in the telluride structure) is possible only upon illumination of the electrode. Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 45, No. 1, pp. 27–31, January-February, 2009.