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The Ba/Si(111) surface, previously known as a 3 x 1 phase, is found to have a 3 x 2 periodicity and a semiconducting band gap. The substrate reconstructs into the honeycomb chain-channel (HCC) structure with Ba atoms in the channel, as in the alkali-metal-induced Si(111)-(3 x 1). However, the metal coverage is determined to be 1/6 monolayers, half the alkali-metal coverage. We propose that the structure and the metal coverage determined for the Ba adsorbate is universal for other alkaline-earth-metal adsorbates. With the alkali-metal-induced 3 x 1 case, our results lead to a rule that one donated electron per 3 x 1 surface unit is necessary to stabilize the HCC reconstruction of Si.  相似文献   

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We study the two lowest-energy isomers of the Ge(111)-(2 x 1) surface, by a state-of-the-art first-principles calculation of their optical spectra, including the electron-hole interaction effects. A comparison of our results with the available experimental data suggests that, at difference with the silicon case, the stablest isomer differs from the standard "buckled Pandey chains" reconstruction. This conclusion is supported by accurate total-energy results.  相似文献   

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An expression for calculating the effective diffusion length from the measured values of the height and density of nanowhiskers is derived in terms of the diffusion growth model. From experimental data for GaAs nanowhisker MBE growth, the diffusion lengths of Ga adatoms on the GaAs(111) and AlAs(111) surfaces are evaluated. Under typical growth conditions, the value of the Ga diffusion length is found to be about several hundreds of nanometers.  相似文献   

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The Halperin (m,m',n) bilayer quantum Hall states are studied on thin cylinders. In this limit, charge-density-wave patterns emerge that are characteristic of the underlying quantum Hall state. The general patterns are worked out from a variant of the plasma analogy. Torus degeneracies are recovered, and for some important special cases a connection to well-known spin chain physics is made. By including interlayer tunneling, we also work out the critical behavior of a possible phase transition between the (331) state and the non-Abelian Moore-Read state in the thin cylinder limit.  相似文献   

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Surface states in Si(111)2×1 and Ge(111)2×1 are detected by the method of the change of external reflectivity, both at energies below and above the gap. Optical transitions at 2.6 eV in Si and at 1.8 eV and 3.1 eV in Ge, as well as the already known transitions below the gap are observed.  相似文献   

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The growth of ultrathin films of Y2O3(111) on Pt(111) has been studied using scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS), and low energy electron diffraction (LEED). The films were grown by physical vapor deposition of yttrium in a 10? 6 Torr oxygen atmosphere. Continuous Y2O3(111) films were obtained by post-growth annealing at 700 °C. LEED and STM indicate an ordered film with a bulk-truncated Y2O3(111)–1 × 1 structure exposed. Furthermore, despite the lattices of the substrate and the oxide film being incommensurate, the two lattices exhibit a strict in-plane orientation relationship with the [11?0] directions of the two cubic lattices aligning parallel to each other. XPS measurements suggest hydroxyls to be easily formed at the Y2O3 surface at room temperature even under ultra high vacuum conditions. The hydrogen desorbs from the yttria surface above ~ 200 °C.  相似文献   

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本文利用密度泛函理论研究了AlnCum(n=2-6,m=1-3)团簇的几何结构、稳定性和电子结构.结合能、解离能以及最高占据轨道(HOMO)和最低未占据轨道(LUMO)之间的能隙的分析表明8和20价电子的Al2Cu2和Al6Cu2团簇具有较强的稳定性.通过对团簇的分子轨道和能级结构进行分析,结果表明8和20价电子的Al2Cu2和Al6Cu2团簇的分子轨道与凝胶模型预测的一致,可构成闭合壳层,表现出特别的稳定性.Cu原子定域的3d轨道位于团簇的分子轨道之间,但并未影响团簇分子轨道的分布.  相似文献   

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The “dangling-bond” surface state dispersion curves, E(k), have been calculated for the (2 × 1) and (1× 1) (111) surfaces of Ge, Si, and diamond, for (1 × 1) GaAs, and for (2 × 1) Ge on Si. The calculations employ the sp3s1 empirical tight-binding model of Vogl et al. and the atomic relaxation of Feder et al. The surface state band gaps are in good agreement with optical-absorption and electron-energy-loss measurements for Ge and Si. For the assumed epitaxial geometry, Ge on Si is predicted to shift the dangling-bond states downward by ≈0.1 to 0.4 eV.  相似文献   

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The YbSi interface has been investigated in the sub-monolayer regime employing Ion Scattering Spectroscopy (ISS), Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED). Three different structures, YbSi(111) 2x1, YbSi(111) 5x1, and YbSi(111) 3x1, have been established by heat treatments of the interfaces. The structures consist of a stable overlayer of Yb atoms on the Si(111) surfaces. The distance of the Yb atoms to the uppermost layer of Si atoms has been estimated by comparing the YbSi ISS intensity ratio with the predictions of a model based on classical scattering theory and a Thomas-Fermi-Moliére potential. The height of the Yb atoms relative to the substrate toplayer was found to be 1.9 ± 0.3→.  相似文献   

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