Structure and local-equilibrium thermodynamics of the c(2x2) reconstruction of rutile TiO2 (100)

We resolve the structure of a c(2x2) reconstruction of the rutile TiO2 (100) surface using a combination of transmission electron diffraction, direct methods analysis, and density functional theory. The surface structure contains an ordered array of subsurface oxygen vacancies and is in local thermodynamic equilibrium with bulk TiO2, but not the with oxygen gas-phase environment. The transition into a bulklike (1x1) reconstruction offers insights into the time-dependent local thermodynamics of TiO2 surface reconstruction under global nonequilibrium conditions.     

Phase Manipulation between c(4 x 2) and p(2 x 2) on the Si(100) surface at 4.2 K

Phase manipulation between c(4x2) and p(2x2) on the Si(100) surface has been demonstrated at 4.2 K for the first time using a low-temperature scanning tunneling microscope. We have discovered that it is possible to change the c(4x2) surface into the p(2x2) surface, artificially, through a flip-flop motion of the buckling dimers by using a sample bias voltage control. Also, scanning at a negative bias voltage or applying a pulse voltage can restore the c(4x2) surface. The STM images as a function of bias voltage and tunneling current reveal the interesting dynamics of the buckling dimers on the long debated surface. Our results will show that energetic tunneling electrons are most likely responsible for the observed phase transition from c(4x2) to p(2x2).     

c(2 x 2)CO ON Ni(100): Photoemission orientation determination

Angular resolved photoemission studies of c(2 x 2)CO adsorbed on Ni(100) show that the molecule is bound to the surface with the molecular axis normal to the surface. The uncertainty of this determination is approximately 15°, which is consistent with the expected angular broadening due to vibrational modes. This is in distinct contrast to a bend of 34° proposed to explain LEED data on this system.     

Dynamics of exciton formation at the Si(100) c(4 x 2) surface

Carrier recombination at the Si(100) c(4 x 2) surface and the underlying surface electronic structure is unraveled by a combination of two-photon photoemission and many-body perturbation theory: An electron excited to the silicon conduction band by a femtosecond infrared laser pulse scatters within 220 ps to the unoccupied surface band, needs 1.5 ps to jump to the band bottom via emission of optical phonons, and finally relaxes within 5 ps with an excited hole in the occupied surface band to form an exciton living for nanoseconds.