Anomalous Hall effect in ferromagnetic semiconductors in the hopping transport regime

We present a theory of the anomalous Hall effect in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of the anomalous Hall conductivity in this system can be attributed to a phase that a hole gains when hopping around closed-loop paths in the presence of spin-orbit interactions and background magnetization of the localized Mn moments. Mapping the problem to a random resistor network, we derive an analytic expression for the macroscopic anomalous Hall conductivity sigma(AH)(xy). We show that sigma(AH)(xy) is proportional to the first derivative of the density of states varrho(epsilon) and thus can be expected to change sign as a function of impurity band filling. We also show that sigma(AH)(xy) depends on temperature as the longitudinal conductivity sigma(xx) within logarithmic accuracy.     

Giant magnetoresistance in the variable-range hopping regime

We predict the universal power-law dependence of the localization length on the magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large negative magnetoresistance in the hopping regime. The reason for the universality is that the problem of the electron tunneling in a random media belongs to the same universality class as the directed polymer problem even in the case of wave functions of random sign. We present numerical simulations that prove this conjecture. We discuss the existing experiments that show anomalously large magnetoresistance. We also discuss the role of localized spins in real materials and the spin polarizing effect of the magnetic field.     

Spin dynamics in the regime of hopping conductivity

Spin dynamics in the impurity band of a semiconductor with the spin-split spectrum is considered. Due to the splitting, phonon-assisted hops from one impurity to another axe accompanied by rotation of the electron spin, which leads to spin relaxation. The system is strongly inhomogeneous because of exponential variation of hopping times. However, at very small coupling an electron diffuses over a distance exceeding the characteristic scale of the inhomogeneity during the time of spin relaxation, so one can introduce an averaged spin relaxation rate. At larger values of coupling, the system is effectively divided into two subsystems: one where relaxation is very fast and another where relaxation is rather slow. In this case, spin decays due to the escape of the electrons from one subsystem to another. As a result, the spin dynamics is nonexponential and hardly depends on spin-orbit coupling. The text was submitted by the authors in English.     

Orbital ac spin-Hall effect in the hopping regime

The Rashba and Dresselhaus spin-orbit interactions are both shown to yield the low temperature spin-Hall effect for strongly localized electrons coupled to phonons. A frequency-dependent electric field E(omega) generates a spin-polarization current, normal to E, due to interference of hopping paths. At zero temperature the corresponding spin-Hall conductivity is real and is proportional to omega2. At nonzero temperatures the coupling to the phonons yields an imaginary term proportional to omega. The interference also yields persistent spin currents at thermal equilibrium, at E=0. The contributions from the Dresselhaus and Rashba interactions to the interference oppose each other.     

Mesoscopic effects in the quantum Hall regime

We report results of a study of (integer) quantum Hall transitions in a single or multiple Landau levels for non-interacting electrons in disordered two-dimensional systems, obtained by projecting a tight-binding Hamiltonian to the corresponding magnetic subbands. In finite-size systems, we find that mesoscopic effects often dominate, leading to apparent non-universal scaling behavior in higher Landau levels. This is because localization length, which grows exponentially with Landau level index, exceeds the system sizes amenable to the numerical study at present. When band mixing between multiple Landau levels is present, mesoscopic effects cause a crossover from a sequence of quantum Hall transitions for weak disorder to classical behavior for strong disorder. This behavior may be of relevance to experimentally observed transitions between quantum Hall states and the insulating phase at low magnetic fields.     

Electronic correlation in the quantum Hall regime

Two‐dimensional interacting electron systems become strongly correlated if the electrons are subject to a perpendicular high magnetic field. After introducing the physics of the quantum Hall regime the incompressible many‐particle ground state and its excitations are studied in detail at fractional filling factors for spin‐polarized electrons. The spin degree of freedom whose importance was shown in recent experiments is considered by studying the thermodynamics at filling factor one and near one.     

Electron localization in the quantum Hall regime

The theory of the insulating state discriminates between insulators and metals by means of a localization tensor, which is finite in insulators and divergent in metals. In absence of time-reversal symmetry, this same tensor acquires an off-diagonal imaginary part, proportional to the dc transverse conductivity, leading to quantization of the latter in two-dimensional systems. I provide evidence that electron localization--in the above sense--is the common cause for both vanishing of the dc longitudinal conductivity and quantization of the transverse one in quantum Hall fluids.     

Inhomogeneous Hall-geometry sample in the quantum Hall regime

A generalization of the known theory describing the Hall channels with integer filling factors in inhomogeneous 2D electronic samples to the case of a stationary nonequilibrium state (with a nonzero Hall voltage V _H across the 2D system) is proposed. For the central strip located near the extremum of the electron density, the theory predicts a change in its width and a shift of the whole strip from the equilibrium position as functions of V _H . The theoretical results are used to interpret recent experiments on measuring the local electric fields along the Hall samples both in equilibrium conditions and in the presence of transport in the quantum Hall regime.     

Conductivity peaks broadening in the quantum Hall regime

We argue that it is the hopping transport that is responsible for broadening of the σ_xx peaks. Explicit expressions for the width Δν of a peak as a function of the temperature T, current J and frequency ω are found. It is shown that Δν grows with T as (T/T₁)^κ, where κ is the inverse localization-length exponent. The current J is shown to act like the effective temperature T_eff(J) ∝ J^1/2 if . Broadening of the ohmic ac-conductivity peaks with frequency ω is found to be determined by the effective temperature      

Nonstandard temperature dependence of the impurity-band hopping Hall mobility

A nonstandard temperature dependence of the impurity-band hopping Hall mobility at low temperatures is derived for a model with a rectangular form of the density of uncorrelated levels, using the Generalized Stochastic Liouville Equation Model in a way reminding of the Holstein and Friedman approach.     

Coherent ultrafast dynamics in the quantum Hall effect regime

We review recent investigations of the femtosecond non-linear optical response of the two-dimensional electron gas (2DEG) in the quantum Hall effect regime. We find that the time and frequency profile of the four-wave-mixing non-linear optical spectrum is strongly influenced by Coulomb correlations between the photoexcited electron-hole pairs and the 2DEG collective excitations. We discuss experimental and theoretical results showing non-Markovian memory effects in the polarization dephasing, and an optically induced time-dependent coupling between the two lowest Landau level magnetoexcitons.