Energy band and band-gap properties of deformed single-walled silicon nanotubes

The fantastic physical properties of single-walled silicon nanotubes (SWSiNTs) under mechanical strain make them promising materials for fabricating nanoscale electronic devices or transducers. Here we investigate the energy band and band-gap properties of the SWSiNTs calculated from the tight-binding model approximation. The results show that the band-gap properties are very sensitive to the deformation degree and the helicity of the SWSiNTs. The results can be employed to guide the design of nanoelectronic devices based on silicon nanotubes.     

Transport properties of boron-doped single-walled silicon carbide nanotubes

The doped boron (B) atom in silicon carbide nanotube (SiCNT) can substitute carbon or silicon atom, forming two different structures. The transport properties of both B-doped SiCNT structures are investigated by the method combined non-equilibrium Green’s function with density functional theory (DFT). As the bias ranging from 0.8 to 1.0 V, the negative differential resistance (NDR) effect occurs, which is derived from the great difficulty for electrons tunneling from one electrode to another with the increasing of localization of molecular orbital. The high similar transport properties of both B-doped SiCNT indicate that boron is a suitable impurity for fabricating nano-scale SiCNT electronic devices.     

Intrinsic electrical properties of individual single-walled carbon nanotubes with small band gaps

Individual single-walled carbon nanotubes (SWNT) exhibiting small band gaps on the order of 10 meV are observed for the first time in electron transport measurements. Transport through the valence or conduction band of a small-gap semiconducting SWNT (SGS-SWNT) can be tuned by a nearby gate voltage. Intrinsic electrical properties of the Ohmically contacted SGS-SWNT are elucidated. An SGS-SWNT exhibits metal- or semiconductorlike characteristics depending on the Fermi level position in the band structure.     

Growth of single-walled carbon nanotubes on silicon nanowires

Single-walled carbon nanotubes (SWNTs) have been grown on silicon nanowires (SiNWs) by ethanol chemical vapor deposition (CVD) with Co catalysts. We have found that a surface SiO_x layer of SiNWs is necessary for the formation of active Co catalysts. In fact, the yield of the SWNT/SiNW heterojunctions gradually decreases as the thickness of the surface SiO_x layer decreases. Since thin SiNWs are transparent to an electron beam, the Co nanoparticles on SiNWs can be easily observed as well as SWNTs by TEM. Therefore, the relationship between the diameters of each SWNT and its catalyst nanoparticle has been investigated. The diameters of SWNTs are equal to or slightly smaller than those of the catalyst nanoparticles.     

Growth of single-walled carbon nanotubes on porous silicon

Porous silicon is an important and versatile material in the semiconductor industry, and can be achieved by electrochemically etching silicon wafers. Employing porous silicon as substrates, this article presents a new approach to grow single-walled carbon nanotubes on wafers for device applications. Free from support materials, this method is a clean one. At the same time it is feasible and robust, as porous silicon is remarkably superior to polished surface in facilitating the nucleation of catalyst. The superiority of porous silicon over polished surface is attributed to their different dewetting manners.     

Energy and electronic properties of non-carbon nanotubes based on silicon dioxide

The geometric, energy, and electronic characteristics of new non-carbon nanotubes based on silicon dioxide are investigated in the framework of the local electron density functional formalism. Nanotubes are classified according to the type of rolling-up of the SiO₂ sheet. It is shown that, among the entire set of considered nanotubes with different symmetries, the (6, 0) nanotubes are energetically more favorable. The densities of states for nanotubes are calculated. It is established that all nanotubes are dielectrics with a wide band gap. The band gap varies over a wide range with a change in the longitudinal strain of the nanotube.     

Bright band gap photoluminescence from unprocessed single-walled carbon nanotubes

Unprocessed single-walled carbon nanotubes suspended in air at room temperature emit bright, sharply peaked band gap photoluminescence. This is in contrast with measurements taken from nanotubes lying on the flat surface for which no luminescence was detected. Each individual nanotube has a luminescence peak of similar linewidth ( approximately 13 meV), with different species emitting at various different wavelengths spanning at least 1.0 to 1.6 microm. A strong enhancement of photoluminescence intensity is observed when the excitation wavelength is resonant with the second Van Hove singularity, unambiguously confirming the origin of the photoluminescence.     

On the electronic band structure of zigzag-type single-walled carbon nanotubes

The electronic band structure of a zigzag-type carbon nanotube has been computed by using the tight-binding approximation method in the framework of SSH Model Hamiltonian modified by the inclusion of two Lagrange multipliers instead of one. This modification yielded an electronic band structure consistent with the experimental reports that an infinite (3,0) zigzag-type single-walled carbon nanotubes displays a metallic behaviour.     

Structural and vibrational properties of deformed carbon nanotubes

The fantastic variation of the physical properties of carbon nanotubes (CNTs) and their bundles under mechanical strain and hydrostatic pressure makes them promising materials for fabricating nanoscale electromechanical coupling devices or transducers. In this paper, we review the recent progress in this field, with much emphasis on our first-principles numerical studies on the structural and vibrational properties of the deformed CNTs under uniaxial and torsional strains, and hydrostatic pressure. The nonresonant Raman spectra of the deformed CNTs are also introduced, which are calculated by the first-principles calculations and the empirical bond polarizability model.      

锯齿型单壁碳纳米管能隙的第一性原理研究

本文采用基于广义梯度近似(GGA)的第一性原理方法,对锯齿型单壁碳纳米管(7,0)、(8,0)、(9,0)、(12,0)的能带结构和能隙进行理论计算.结果表明,各孤立管能隙值跟紧束缚(TB)近似所推出的结论有很大的出入,但跟实验观测结果比较接近.本文对引起这一差异的原因做了初步探讨.     

Electrical properties of plastically deformed silicon crystals

The influence of the nature of the interaction of deformation and impurity defects on the scattering of majority carriers is investigated in silicon single crystals. Fiz. Tverd. Tela (St. Petersburg) 40, 1816–1817 (October 1998)     

Diffusion properties of plastically deformed silicon crystals

The effect of dislocations generated by electroplastic strain on the electric-field-driven transport of impurity atoms of indium in single crystals of P-silicon is investigated experimentally. It is shown that when electrodiffusion of indium and strain are induced simultaneously, the impurity ions are preferentially dragged towards the anode. Fiz. Tverd. Tela (St. Petersburg) 41, 1028–1029 (June 1999)     

Electronic transport properties of metallic single-walled carbon nanotubes

We have calculated the differential conductance of metallic carbon nanotubes by the scatter matrix methon.It is found that the differential conductance of metallic nanotube-based devices oscillates as a function of the bias voltage between the two leads and the gate voltage.Oscillation period T is directly proportional to the reciprocal of nanotube length.In addition,we found that electronic transport properties are sensitive to variation of the length of the nanotube.     

Theoretical investigations of magnetic properties of ferromagnetic single-walled nanotubes

The magnetic behaviors of ferromagnetic single-walled nanotubes are systematically investigated by use of the many-body Green's function method of quantum statistical theory. The spontaneous magnetization, absolute value of ferromagnetic energy, area of hysteresis loop and coercivity increase with diameter of the tubes and spin quantum number, and decrease with temperature. Curie temperature increases with diameter and spin quantum number. As the diameter of the tube tends to infinity, all the numerical results approach to those of a two-dimensional monolayer. The dependences of initial susceptibility on temperature and diameter below and above Curie point are contrary. The calculated results are compared with experimental results where possible, and are qualitatively in agreement with the latter. The Curie temperature is determined by the tube diameter and independent of rolling helicities.     

Magnetism of single-walled silicon carbide nanotubes doped by boron,nitrogen and oxygen

We calculated, using spin polarized density functional theory, the electronic properties of zigzag (10,0) and armchair (6,6) semiconductor silicon carbide nanotubes (SiCNTs) doped once at the time with boron, nitrogen, and oxygen. We have looked at the two possible scenarios where the guest atom X (B, N, O), replaces the silicon X_Si, or the carbon atom X_C, in the unit cell. We found that in the case of one atom B @ SiCNT replacing a carbon atom position annotated by B_C exhibits a magnetic moment of 1 μ_B/cell in both zigzag and armchair nanotubes. Also, B replacing Si, (B_Si), induce a magnetic moment of 0.46 μ_B/cell in the zigzag (10,0) but no magnetic moment in armchair (6,6). For N substitution; (N_C) and (N_Si) each case induce a magnetic moment of 1 μ_B/cell in armchair (6,6), while N_Si give rise to 0.75 μ_B/cell in zigzag (10,0) and no magnetic moment for N_C. In contrast the case of O_C and O_Si did not produce any net magnetic moment in both zigzag and armchair geometries.     

Nonlinear optical properties and phase-relaxation processes in single-walled carbon nanotubes

We have investigated third-order nonlinear optical properties of bundled and isolated semiconducting single-walled carbon nanotubes (SWNTs) by means of Z-scan method, pump-probe method, and two-beam time-resolved degenerate four-wave mixing (DFWM) method. The figures of merit Im χ⁽³⁾/α in both bundled and isolated SWNTs samples were found to be enhanced with increasing tube diameter. The measured Im χ⁽³⁾/α value in the bundled SWNTs was an order of magnitude smaller than that in the isolated SWNTs. Both population relaxation time T₁ and phase-relaxation time T₂ for bundled samples were smaller than those in the isolated samples. These experimental results can be explained by an increase in nonradiative recombination rate and phase-relaxation rate in the bundled sample. The phase-relaxation time T₂ is considered to have a significant role in the enhancement of Im χ⁽³⁾/α.     

Nonlinear optical and optical limiting properties of individual single-walled carbon nanotubes

A large number of individual single-walled carbon nanotubes (SWNTs) were obtained by dilution of nanotube dispersions in N-methyl-2-pyrrolidone (NMP). Up to 70% individual SWNTs are contained in the NMP dispersions with concentrations of less than 4.0×10^-3 mg/mL. The nonlinear optical and optical limiting properties of SWNT dispersions were studied by using the Z-scan technique at 532 nm. As the concentration of SWNTs is increased, the nonlinear extinction (NLE) and optical limiting effects improve significantly, while the limiting thresholds decrease gradually. The individual SWNTs show similar NLE effect to zinc phthalocyanine nanoparticles, while also exhibiting larger NLE coefficients than Mo₆S_4.5I_4.5 nanowires.     

A comparison between the mechanical and thermal properties of single-walled carbon nanotubes and boron nitride nanotubes

Carbon nanotubes (CNTs) are semimetallic while boron nitride nanotubes (BNNTs) are wide band gap insulators. Despite the discrepancy in their electrical properties, a comparison between the mechanical and thermal properties of CNTs and BNNTs has a significant research value for their potential applications. In this work, molecular dynamics simulations are performed to systematically investigate the mechanical and thermal properties of CNTs and BNNTs. The calculated Young’s modulus is about 1.1 TPa for CNTs and 0.72 TPa for BNNTs under axial compressions. The critical bucking strain and maximum stress are inversely proportional to both diameter and length-diameter ratio and CNTs are identified axially stiffer than BNNTs. Thermal conductivities of (10, 0) CNTs and (10, 0) BNNTs follow similar trends with respect to length and temperature and are lower than that of their two-dimensional counterparts, graphene nanoribbons (GNRs) and BN nanoribbons (BNNRs), respectively. As the temperature falls below 200 K (130 K) the thermal conductivity of BNNTs (BNNRs) is larger than that of CNTs (GNRs), while at higher temperature it is lower than the latter. In addition, thermal conductivities of a (10, 0) CNT and a (10, 0) BNNT are further studied and analyzed under various axial compressive strains. Low-frequency phonons which mainly come from flexure modes are believed to make dominant contribution to the thermal conductivity of CNTs and BNNTs.     

BN管状团簇到单壁纳米管的几何结构和电子性质

利用密度泛函理论(DFT),对氮化硼(BN)管状团簇的几何结构、稳定性和电子性质进行了研究.选取合适的BN结构单元作为结构生长基元,采用逐层生长的方式计算得到有限长度、不同截面尺寸的稳定管状团簇.结构中B-N交替排列,结构组成中的四元环和六元环数目均符合一般表达式.计算结果表明,通过适当组装管状团簇以及碳原子掺杂,可以制备出带隙可调的单壁氮化硼纳米管.