共查询到20条相似文献,搜索用时 11 毫秒
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Humberto César Chaves Fernandes Eduardo Armorim Martins de Souza Idalmir de Souza Queiroz Jr 《International Journal of Infrared and Millimeter Waves》1995,16(1):185-200
In this study, the effect of the metallization thickness in finlines on semiconcuctor substrate is researched. The propagation parameters are computed to measure the inluence of the metallization. The theory and numerical results are presented to the propagation constant and characteristic impedance of the bilateral and unilateral finlines. The full wave analysis of the transverse transmission line — TTL method is used to determine the electromagnetic fields of the structure in Fourier transform domain — FTD. Applying the suitable boundary conditions, the moment method and expanding the fields in a set of suitable bases functions, a homogeneous matrix system is obtained and the propagation constant is computed. The characteristic impedance is obtained using the relation of the voltage in the slot and the transmitted power by the structure.Computational programs are developed to obtain numerical results to the propagation parameters composed by the propagation constant and characteristic impedance.This work received financial support by CAPES and CNPq. 相似文献
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采用混合S参数法研究了入射波和集总电源共同激励下微带线的终端响应,对于微带线上的传输线模式波和天线模式波的计算采用了Galerkin积分方法,避免了采用广义函数束方法(GPOF)从仿真结果中提取信号的过程,从而简化了计算步骤,减少了计算时间。通过与电磁仿真软件HFSS仿真结果的比较,验证了该方法的正确性。并采用混合S参数方法计算了不同微带线参数对耦合效应的影响,研究表明,当微带线长度变长,宽度变宽,介质基板厚度变厚,介质基板相对介电常数变大时,耦合效应变强,其中耦合效应受长度影响最大。 相似文献
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Giuliano F. Bastista Oliveira José Elesbão C. Neto Humberto C. Chaves Fernandes 《International Journal of Infrared and Millimeter Waves》2003,24(7):1159-1169
For the microstrip patch resonator, as a planar antenna of a microstrip, a set of equations that represents the electromagnetic fields in the x and z direction as function of the electric field in the y direction are obtained applying the TTL method. This method is very suitable at microwave and antenna applications, and gives accurate complex resonant frequency, which contributes definitively to obtain higher precision antenna parameters. For each type of array is calculated the array factor, considering the excitation, phase and the relative displacement between the elements as well as the dimensions and number of elements. 相似文献
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理论研究了平面电磁波通过n型重掺GaAs薄膜的透射谱.当GaAs薄膜两表面刻上亚波长的周期性沟槽结构时,透射谱在中红外波段出现了异常的透射增强现象.把这一现象归因于表面等离子体模式和波导模式的耦合.通过优化结构参数可以得到最大的透射效率.此外,发现随着掺杂浓度的升高,透射谱线中的透射峰逐渐向高频方向移动,最优化后透射峰值随掺杂浓度的升高而逐渐降低.这是由于掺杂浓度的改变,导致了不同的等离子体频率和电子碰撞频率,从而影响了激发模式和薄膜对电磁波的吸收.
关键词:
表面等离子体
掺杂半导体
增强透射
掺杂调制 相似文献
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Using the tight-binding model and the generalised Green’s function formalism, the effect of quantum interference on the electron transport through the benzene molecule in a semiconductor/benzene/semiconductor junction is numerically investigated. We show how the quantum interference sources, different contact positions and local gate can control the transmission characteristics of the electrode/molecule/electrode junction. We also study the occurrence of antiresonant states in the transmission probability function using a simple graphical scheme for different geometries of the contacts between the benzene molecule and semiconductor (silicon and titanium dioxide) electrodes. 相似文献
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以弱色散特性的扇形金属-介质夹持杆螺旋线慢波结构的Ka波段行波管作为研究对象,进行了互作用特性仿真研究。采用螺距跳变和磁场跳变技术进一步提高了该行波管在工作频带的输出功率和电子效率,并解决了电子注散焦问题。设计结果表明:当工作电压为9 kV、工作电流为210 mA时,行波管在24~40 GHz整个频带内,各频点的增益在37.7~48.7 dB之间,电子效率在15.18%~19.42%之间,输出功率大于286 W。此结果较之均匀周期的设计结果,电子效率增幅在4.19%以上,输出功率增长率在4.3%以上,尤其在26~37 GHz范围内,电子效率增幅达到了11.8%以上,输出功率增长率达11.9%。 相似文献
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WU Zhengmao XIA Guangqiong WU Lan CHEN Jianguo LU Yucun 《Chinese Journal of Lasers》1994,3(6):495-499
Effect of antireflection coatings on the peak wavelength of output spectrum from end facet of a semiconductor laser¥WUZhengma... 相似文献
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设计了一台层叠Blumlein线型脉冲功率源。该脉冲源以平板型Blumlein线为储能器件,使用4个GaAs光导开关作为脉冲形成开关,通过4级Blumlein线层叠结构以获得更高输出电压。分别使用10 mm及3 mm间隙光导开关进行实验,比较了PSpice电路仿真与实验结果。实验测试显示,10 mm开关充电23.5 kV时上升沿较大,可能的原因是偏置电场较低时开关导通时间较长。测试了不同工作电压下功率源的输出电压,结果显示:在10 mm间隙开关条件下,充电23.5 kV时,负载上得到了53 kV的高压脉冲输出;3 mm开关充电13.9 kV时输出电压39.4 kV,输出效率70%。实验结果表明, 随着工作场强的提高,电压输出效率呈现先下降后上升最终趋于饱和的趋势。 相似文献
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目前,针对空间电磁场作用有耗介质层上传输线的电磁耦合,仍缺乏有效的数值分析方法.因此,本文提出一种高效的时域混合算法,很好地解决了有耗介质层上传输线电磁耦合建模难的问题.首先,对经典传输线方程进行改进,推导了适用于有耗介质层上多导体传输线电磁耦合分析的修正传输线方程.然后,结合时域有限差分方法和相应插值技术,求解修正传输线方程,获得多导线及其端接负载上的电压和电流响应,并实现空间电磁场辐射与多导线瞬态响应的同步计算.最后,通过相应计算实例的数值模拟,与CST软件的仿真结果进行对比,验证了时域混合算法的正确性和高效性. 相似文献
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研究了半导体材料对激光的吸收机制。运用一维热传导方程以及载流子耦合扩散方程研究了激光与半导体材料相互作用的热输运、自由载流子输运过程。分析了半导体材料的热学损伤、力学损伤,以及光电探测器的击穿损伤机制。应用数值模拟的方法对Nd:YAG脉冲激光(1.06μm)辐照下感兴趣的半导体材料PbS内部瞬时温度场分布进行了模拟。 相似文献
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A full numerical calculation of the Franz--Keldysh effect on magnetoexcitons in a bulk semiconductor 下载免费PDF全文
We have performed a full numerical calculation of the Franz--Keldysh (FK)
effect on magnetoexcitons in a bulk GaAs semiconductor. By employing an
initial value method in combination with the application of a perfect matched
layer, the numerical effort and storage size are dramatically reduced due to
a significant reduction in both computed domain and number of base
functions. In the absence of an electric field, the higher magnetoexcitonic
peaks show distinct Fano lineshape due to the degeneracy with continuum states
of the lower Landau levels. The magnetoexcitons that belong to the zeroth
Landau level remain in bound states and lead to Lorentzian lineshape, because they
are not degenerated with continuum states. In the presence of an electric
field, the FK effect on each magnetoexcitonic resonance can be identified for
high magnetic fields. However, for low magnetic fields, the FK oscillations
dominate the spectrum structure in the vicinity of the bandgap edge and the
magnetoexcitonic resonances dominate the spectrum structure of higher
energies.
In the moderate electric fields, the interplay of FK effect and
magnetoexcitonic resonance leads to a complex and rich structure in the
absorption spectrum. 相似文献
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采用钒掺杂半绝缘4H-SiC衬底,利用磁控溅射在硅衬底上制备了Ni/Au金属电极,并封装加工成同面型横向电极结构SiC光导开关,研究了不同激光触发能量对光导开关光电响应及导通电阻的影响。用波长532 nm的激光作为触发源,当激光触发能量从26.7 mJ增加到43.9 mJ时,光导开关的导通电阻从295 降低到197 。利用复合理论推导出激光触发时导带中载流子浓度随时间的变化规律,并利用MATLAB模拟计算了不同触发能量下开关的导通电阻,得到了与实验较一致的结果。在此基础上,提出了降低开关导通电阻的两种途径。 相似文献
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应用行波理论,建立了一个终端含N沟道金属氧化物半导体(N-channel metal oxide semiconductor, NMOS)反相器的传输线系统的非线性离散映射模型.对该模型进行仿真发现, 反射系数的变化可能导致系统出现时空分岔和时空混沌等复杂的时空行为, 并且初始分布对系统达到稳态后的时空行为有很大影响,零初始分布对应的时空图样比较规则, 而非零的初值分布则会导致沿线电压出现复杂的时空图样,分析表明这些时空复杂行为的产生 源于系统中传输线的无穷维本质和NMOS反相器的非线性伏安特性. 相似文献