Double scattering effect and its application in Si<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>x</Subscript> solid solution diagnosis

The effect of double scattering of Ar⁺ ions from the surface of C, Al, Si, Ti, Ge, and In targets is studied by the method of slow scattered ion spectroscopy. Based on this effect, a technique to estimate the cluster phase of germanium atoms in the Si_1−x Ge_x solid solution with a small (5–10%) content of germanium is suggested.     

Inelastic energy losses in single and double collisions of keV-energy Ar<Superscript>+</Superscript> ions with Be,C, Al,Si, Ge,and in targets

Inelastic energy losses Q in scattering of Ar⁺ ions with an initial energy of E ₀ = 5 keV from Be, C, Al, Si, Ge, and In targets are determined using low-energy ion scattering spectroscopy. In spite of the fact that Ar⁺ ion beams are used in the overwhelming majority of applied studies devoted to analysis of the elemental composition and structure of materials for modern electronics, information on inelastic losses for these bombarding particles is scarce. It is shown that the knowledge of the value of Q makes it possible to correctly interpret the energy spectra of particles emitted during ion bombardment of the surface.     

Auger neutralization of He ions at an Al(100) surface using isotope effect

He atoms and ions of the isotopes 3He and 4He are scattered with keV energies under a grazing angle of incidence from a flat and clean Al(100) surface. For the two isotopes we investigate Auger neutralization of incident He+ and He2+ ions via fractions of surviving ions. Pronounced effects for the different isotopes are observed which can be attributed to different time scales concerning the neutralization process of He ions in front of a metal surface. From the analysis of the data obtained for singly and doubly charged ions we find evidence that charge fractions for scattering of He+ ions from an Al surface result predominantly from a direct (Auger) electron capture event.     

Reflection of narrow light beams by a scattering medium

A calculation is made of the doubly back scattered radiation from the intersection volume and the close-range volume. A comparison of the results for singly and doubly scattered radiation with experimental data enables the limits of applicability of the equations to be determined. It is shown that for scattering coefficients in fog of < 0.06 m^–1 the scattered radiation field is caused by single scattering but when increases to 0.6 m^–1 only the doubly scattered radiation from the intersection and close-range volumes need be considered.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 95–100, April, 1974.     

High fluence laser ablation of aluminum targets: Time-of-flight mass analysis of plasmas produced at wavelengths 532 and 355 nm

We report on Time-of-Flight Mass Spectrometry (TOFMS) analysis of plasmas produced in laser ablation of Al targets. We used both the second (532 nm) and third (355 nm) harmonic of a Nd: YAG laser system, carrying out the investigation in a regime of relatively high laser fluence (up to 70 J/cm²), where the production of ionized species in the plume is maximized. We present TOF mass spectra of ions in the laser-produced plasma, and a detailed analysis of the relative abundance of different charged species as a function of the laser fluence. The presence of single, doubly and triply ionized Al atoms has been observed and the fluence threshold for their production is reported. We also studied the total ion and electron yield at different laser fluences, its saturation above specific energy densities, and singly ionized cluster-ions produced in the laser plasma.     

The measurement of energy spectra of neutral particles in low energy ion scattering

An apparatus is described for low energy (0.1–10 keV) ion scattering (LEIS) experiments. A time of flight (TOF) spectrometer is incorporated in the system to be able to measure the energy of particles in the neutral state after scattering. The energy resolution ΔE/E of the TOF spectrometer is discussed and found to be 0.5% (FWHM). This is sufficient for our scattering experiments. An electrostatic analyzer (ESA) is used to measure the energy of scattered ions [ΔE/E=0.5% (FWHM)]. Experiments show that in general the ion dose needed to obtain a TOF spectrum (2×10¹⁰ ions/cm²) is much smaller than the dose needed for an ESA-spectrum (6×10¹³ ions/cm²). The ion spectra measured with the TOF spectrometer, by subtracting the neutral yield from the total yield, as well as with the ESA are found to agree quite well. This provides a way to calibrate the TOF spectrometer. The determination of the ion fraction of scattered particles is discussed [10 keV⁴⁰Ar⁺ on Cu(100), scattering angle 30°]. It is shown that the TOF spectrometer is able to measure light recoil particles (e.g. hydrogen) from a heavy substrate. In the analysing system is, in addition to the TOF spectrometer, also incorporated a stripping cell to measure the energy of neutral scattered particles. An energy spectrum of neutral scattered particles measured with both methods is shown.     

Influence of the chemisorption state on the charge distribution of low energy Si scattered from I adatoms

The ion fractions of 5 keV Si⁺ ions singly scattered from iodine adatoms adsorbed on Al(1 0 0), Si(1 1 1) and pre-oxidized Si(1 1 1) were measured with time-of-flight spectroscopy. A considerable ion yield was observed, which did not change significantly with exit angle or I coverage. The mechanism of ion formation is assigned to valence electron resonant charge transfer (RCT) assisted by promotion of the Si ionization level. The yields are smaller than those of Si scattered from Cs adatoms, however, which suggests that electron tunneling from the occupied chemisorption states of the I adatom provides an additional neutralization channel.     

The energy spectra of secondary ions emitted during ion bombardment

Secondary ion energy spectra have been measured for singly charged ions emitted from targets irradiated with 43 keV A⁺ ions. Targets studied include the 3d transition metals (Sc, Ti, V, Cr, Fe, Ni) Cu and Zn, Zr, Al and Si and the compounds SiO₂, Al₂O₃, NaCl, KCl. Energy spectra were measured in the energy range 1–600 eV. In several cases a peak in the energy spectrum in the region around 200 eV has been found. This is in addition to the usual low energy peaks in the region of 5–10 eV. In many cases the low energy peak was observed to decay steadily with irradiation time or to increase with oxygen pressure. In the case of the cleanest Zn spectrum, only the high energy peak can be detected. The data are discussed in relation to current models of secondary ion emission. We conclude that, in general, elemental metal targets which are clean are characterised by the high energy peak in the secondary ion energy spectrum. The slower ions emitted have been neutralised by electron exchange processes. The low energy peaks in unclean, partially clean, oxide coated or compound targets (NaCl, KCl) arise because the neutralisation of the slower ions is either not as efficient or is not possible. The secondary ion emission model of Blaise and Slodzian could account for the emission of ions from most targets.     

Features of the electron exchange under grazing scattering of H− ions from a thin aluminum disk

The electron exchange under grazing scattering of a negative hydrogen ion from a thin Al disk is analyzed via the wave packet propagation method that does not use the perturbation theory. The probability of H^? ion fraction formation is calculated as a function of the ion velocity component (v_‖) parallel to the surface. It is shown that the yield of negative hydrogen ions has a bell-like dependence on the value of v_‖ under grazing scattering from a thin disk. The negative ion yield under grazing scattering from a disk is very close to the H^? ion yield under scattering from a film. The maximum of the probability of H^? fraction formation calculated for a thin disk is shifted to smaller values of v_‖ with respect to the maximum of the probability of H^? formation for a thin film.     

Interaction of low energy (5–10 keV) argon atoms and ions with a Cu(100) surface; Ion fraction,ionization and neutralization

The ion fractions η⁺ of low energy (5–10 keV) argon particles scattered from a Cu(100) surface, are measured with a time of flight spectrometer. Neutral as well as charged projectiles are used. The scattering angle θ is 30°. The results for different angles of incidence ψ and crystal directions are reported. For scattering in the 〈100〉 direction, with a ψ-value of 15° and a primary energy E₀ of 5 and 10 keV, the ion fractions for the quasi single scattering peak, η⁺_QS, are 1.5 and 6.1% respectively. When E₀ is between 5 and 10 keV a reionization process with a constant reionization probability occurs during the violent interaction. This process, but also neutralization along the outgoing trajectory, determines η⁺_QS. With ions as projectiles, an energy difference of about 16 eV is observed between the quasi single scattering peaks in the spectra of all scattered particles and of ions only. The ion fraction for the quasi double scattering peak, η⁺_QD. depends largely upon E₀, indicating that the efficiency of the reionization process increases with E₀. A qualitative discussion of the data is given, using the reionization process and the interatomic neutralization processes along the trajectory of the scattered particles.     

Characteristics of laser-produced Ge ion fluxes used for modification of semiconductor materials

This paper describes the laser generation of Ge ion fluxes and their application to the modification of semiconductor materials by ion implantation. The Ge ions were produced by ablating solid targets using the PALS high-power iodine laser system at the PALS Research Centre in Prague, operating at its third harmonic frequency (438 nm wavelength) and producing 0.4 ns pulses with energy up to 0.25 kJ (intensity≤10¹⁵ W/cm²). The goal of these investigations was optimisation of the implantation of low and medium energy laser-generated Ge ion fluxes and they were carried out as part of the project PALS000929. Recently, a new repetitive pulse laser system at IPPLM in Warsaw, with a wavelength of 1.06 μm, energy of ～0.8 J in a 3.5 ns-pulse, repetition rate of up to 10 Hz, and intensity on target of up to 10¹¹ W/cm², has also been employed to produce Ge ions by irradiating solid targets. The laser-generated ions were investigated with diagnostics based on the time-of-flight method: various ion collectors and an electrostatic ion-energy analyzer. The Ge ion fluxes were implanted into Si and SiO₂ substrates located at distances of 10–30 cm from the target. The SiO₂ films were prepared on single crystal Si substrates and were implanted with Ge ions with different properties. The properties of the Ge-implanted layers, in particular, the depth distributions of implanted Ge ions, were characterised using Rutherford backscattering and other material surface diagnostic methods.     

Secondary ion and Auger electron emissions from Ar+-ion-sputtered FeAl alloys

Some FeAl alloys, and pure Al and Fe samples, are sputtered in ultrahigh vacuum with Ar⁺ ions between 4 and 15 keV. As previously observed with CuAl alloys, the intensity of the principal Al Auger peak at 63.5 eV is a parabolic function of the Al concentration. Symmetric collisions Al → Al are thus much more efficient for Auger emission from pure aluminium than asymmetric collisions Ar → Al, the proportion of which among effective collisions hardly reaches 20% at 15 keV. Whatever the initial ion energy, the intensities of singly charged atomic secondary ions Al⁺ and Fe⁺, normalized to pure metals, are equal to the atomic concentration of the corresponding elements, whereas the normalized intensities of the multiply charged ions Al²⁺ and Al³⁺ are roughly equal to the square of Al concentration. These results agree with the occurence of two mechanisms in intrinsic ion emission: an electronic excitation process during the separation of the outgoing particle from the target (singly charged ions) and a collisional process from the symmetric collisions Al → Al only, with multiple Auger de-excitation outside the target (multicharged ions of light elements).     

Correlation between the energy of the ion scattered from the metal surface and its melting heat

A physical experiment and computer simulation of scattering of low-energy Cs⁺ ions from the surfaces of heavy and light metals are discussed. The presented experimental and calculated data confirm the influence of the interatomic bond of a target on the scattered ion energy. Correlation between the scattered ion energy and the melting heat of a scattering target is established.     

Argon (10 keV) scattered from structures,induced by bombarding a Cu(100) surface; ionization and neutralization

The ion fractions, η⁺, of 10 keV argon particles, scattered from a damaged copper surface, are measured with a time of flight spectrometer. The damage was introduced by bombardment with argon ions. The scattering angle was 30°. The results for different angles of incidence, ψ, are reported. For Ψ < 10° the ion fraction is relatively high (～27% for Ψ = 4°) and decreases as Ψ increases. For Ψ = 15° the value of η⁺ is 7%, whereas for 21° < Ψ < 27° the value of η⁺ appears to be constant (～14%). An explanation is given by assuming interatomic ionization as well as neutralization processes along the trajectory of the scattered particles. The number of step-atoms, induced by ion bombardment, is estimated to be about 2 × 10¹⁴/cm².     

Absolute scattering cross-section measurements by a ratio technique

Calculations and measurements are presented which show that absolute scattering cross sections (“Rayleigh ratios”) can be determined by measuring the ratio of the depolarized intensity of doubly scattered light to the polarized intensity of singly scattered light. This technique should be useful in determining the susceptibilities of fluids and the molecular weights of macromolecules.     

Low energy alkali ion scattering investigation of Au nanoclusters grown on silicon oxide surfaces

The atomic and electronic structures of Au nanostructures grown by deposition onto various silicon oxide surfaces were probed with low energy alkali ion scattering. Charge state-resolved time-of-flight spectra of scattered 2 keV ³⁹K⁺ ions were collected from Au deposited onto an untreated Si wafer with a native oxide, a thermally grown oxide surface, and atomically-clean Si(111). It is shown that nanoclusters form on both oxides, but not on the clean Si. A quantitative analysis of the ion scattering spectra indicates that the nanoclusters are initially flat, two-dimensional structures that start to develop a second layer at about 0.5 Å of deposited Au and then form three-dimensional islands. The neutral fraction of scattered 2 keV ³⁹K⁺ ions decreases with deposition indicating changes in the quantum state occupancy with cluster size. The shapes of the clusters differ on the native and thermal oxides, leading to shape-dependent neutralization.     

Experimental investigation on field evaporation of singly and doubly charged rhodium

Field ion mass spectrometry and field ion appearance spectroscopy are used to analyze field evaporation processes of singly and doubly charged rhodium ions. Field strengths were ranged between 17 and 41 V/nm at tip temperatures between 600 and 100 K. The appearance energies of doubly charged species were found to increase with increasing field strengths from 29.5 ± 0.4 to 32.0 ± 0.2 eV, those of the singly charged species from 11.2 ± 0.1 to 12.4 ± 0.1 eV. Activation energies as determined from measured temperature dependences of the ion counting rates are equal for both kinds of ionic species and decrease from 1.5 to 0.05 eV with increasing field strengths. The observed field dependences cannot be predicted from the image hump model of field evaporation. Evaporation of Rh¹⁺is better understood using the charge exchange model. Generation of Rh²⁺ is described by the postionization of Rh¹⁺ within the frame of a simple potential energy model from which the average interaction energy of rhodium surface atoms with their nearest neighbours may be derived.     

Studying the decay of thorium-229 isomer by means of conversion spectroscopy

The design and expected characteristics of an experimental setup for generating a beam of singly, doubly, and triply charged ions of ^229mTh isomer are considered. The scheme of ion transport, the preparation of the thin source, and the means of registering low-energy conversion electrons are described.     

Two-dimensional observation of N2+ and N+ scattering patterns from Cu(001)

Low-energy (<1 keV) N₂⁺ and N⁺ ion scattering from the Cu(001) surface was directly observed by using a two-dimensional detection system. The two-dimensional pattern of the scattered ions changed when the primary ion energy was increased from 200 to 600 eV. The scattering peak shifted toward the [110] azimuth, to which the incident plane was not parallel, above 600 eV. The difference of ion-survival probabilities between N₂⁺ and N⁺ was discussed from the full width at half maximum of the angular distribution of scattered ions.     

Imaging the internal electronic structure of a surface adsorbate with low energy ions

Time-of-flight spectra were collected for 2.5 keV 7Li+ backscattered from Fe surfaces covered with submonolayers of iodine. Li singly scattered from the adatoms has a consistently larger neutral fraction than for scattering from the substrate, implying a region of positive charge atop the iodine. The neutral fraction decreases for off-normal exit angles, indicating a nonuniform charge distribution around the polarizable adsorbates. This demonstrates that ion scattering can image the internal electronic structure of an adatom and provides an explanation for anomalous work function changes.