Amorphization of diamond by low temperature133Xe ion implantation

The structure of the amorphous layer in¹³³Xe implanted diamond is investigated by Mössbauer spectroscopy. Very different Debye Waller factors are measured after room temperature and liquid nitrogen temperature implantation.     

Synthesis of silicon dioxide layers by high dose ion implantation

Single crystal <100> silicon was implanted with molecular oxygen with energies ranging from 80 to 240 keV in a non-channeling direction. Rutherford backscattering (RBS) analysis was used to obtain the oxygen/silicon atomic ratio depth profiles and the thickness of the buried oxide layer, for doses ranging from 10¹⁶ to 1. 5 × 10¹⁸ O₂+/cm². This work links the early low energy work and the more recent higher energy work, and generally excellent agreement has been obtained. The minimum energy for formation of buried silicon dioxide has been identified as 160 keV per oxygen molecule and corresponding oxygen dose of 6 × 10¹⁷ O₂+/cm₂.     

Formation of heavily doped n-type layers in GaAs by multiple ion implantation

Rare earth doping of CaF₂ produces material which gives strong thermoluminescence signals. In an attempt to separate the influence of impurity and intrinsic defects CaF₂ has been implanted with ions of Ce, Dy, Mn, Ca and F. Comparisons are made with chemically doped samples and the effect of thermal treatments have been made in all cases. The cerium and dysprosium ions influence both the shallow charge trapping levels, which determine the temperature of the glow peaks, and the recombination sites which control the photon spectra.

After implantation the strong TL signals show emission at wavelengths near 360 nm for Ce, 480 nm for Dy and for Mn.

Re-excitation of the trapping levels reveals selective emission for some defects, restructuring of less stable defects and major changes in defect concentrations with thermal treatment. The effects of the impurity and intrinsic defects on the spectra are discussed. One major observation is that addition of cerium to “pure” samples does not enhance the TL sensitivity, whereas Dy and Mn both show new glow peaks. In the case of Dy it is thought that the charge trap and the luminescent site are directly linked within one complex defect.     

Formation of hydrogen impurity States in silicon and insulators at low implantation energies

The formation of hydrogenlike muonium (Mu) has been studied as a function of implantation energy in intrinsic Si, thin films of condensed van der Waals gases (N2, Ne, Ar, Xe), fused and crystalline quartz, and sapphire. By varying the initial energy of positive muons (mu+) between 1 and 30 keV the number of electron-hole pairs generated in the ionization track of the mu+ can be tuned between a few and several thousand. The results show the strong suppression of the formation of those Mu states that depend on the availability of excess electrons. This indicates that the role of H-impurity states in determining electric properties of semiconductors and insulators depends on the way in which atomic H is introduced into the material.     

Melting of metallic hydrogen at high pressures

The Lindemann equation was used to calculate the melting of metallic hydrogen. It is shown that, after transition from the molecular dielectric phase to the atomic metallic phase, hydrogen becomes a quantum liquid because of the atomic zero-point vibrations. The phase diagram of hydrogen is unique in that the molecular phase is the only solid phase of hydrogen.     

Melting line of hydrogen at high pressures

The insulator to metal transition in solid hydrogen was predicted over 70 years ago but the demonstration of this transition remains a scientific challenge. In this regard, a peak in the temperature versus pressure melting line of hydrogen may be a possible precursor for metallization. However, previous measurements of the fusion curve of hydrogen have been limited in pressure and temperature by diffusion of hydrogen into the gasket or diamonds. To overcome this limitation we have used an innovative technique of pulsed laser heating of the sample and find a peak in the melting line at P=64.7+/-4 GPa and T=1055+/-20 K.     

Direct fabrication and IV characterization of sub-surface conductive channels in diamond with MeV ion implantation

In the present work we report about the investigation of the conduction mechanism of sp² carbon micro-channels in single crystal diamond. The structures are fabricated with a technique which employs a MeV focused ion-beam to damage diamond in conjunction with variable thickness masks. This process changes significantly the structural properties of the target material, because the ion nuclear energy loss induces carbon conversion from sp³ to sp² state mainly at the end of range of the ions (few micrometers). Furthermore, placing a mask with increasing thickness on the sample it is possible to modulate the channels depth at their endpoints, allowing their electrical connection with the surface. A single-crystal HPHT diamond sample was implanted with 1.8 MeV He⁺ ions at room temperature, the implantation fluence was set in the range 2.1×10¹⁶-6.3×10¹⁷ ions cm^-2, determining the formation of micro-channels with a graded level of damage extending down to a depth of about 3 μm. After deposition of metallic contacts at the channels’ endpoints, the electrical characterization was performed measuring the I-V curves at variable temperatures in the 80-690 K range. The Variable Range Hopping model was used to fit the experimental data in the ohmic regime, allowing the estimation of characteristic parameters such as the density of localized states at the Fermi level. A value of 5.5×10¹⁷ states cm^-3 eV^-1 was obtained, in satisfactory agreement with values previously reported in literature. The power-law dependence between current and voltage is consistent with the space charge limited mechanism at moderate electric fields.     

Dipole polarizability of hydrogen atom at high pressures

Dipole polarizability of hydrogen atom at high pressures is investigated using the model of a trapped atom inside a spherical box with impenetrable surface. Both upper and lower bounds for the polarizability are obtained using accurate variational wavefunctions proposed recently. Buckingham polarizabilities calculated from the 1s state wavefunction are shown to be in good agreement with those calculated from the exact values of rⁿ for cage radii less than 2.5.     

Preparing buried Si3N4 layers by high-intensity ion implantation and rapid thermal annealing

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 53, No. 4, pp. 628–632, October 1990.     

Passivation of laser induced defects in silicon by low energy hydrogen ion implantation

It is well established that the pulsed-laser annealing of as-implanted Si introduces electrically active defects. The aim of this paper is to show that these defects can be neutralized by low-energy hydrogen ion implantation. The techniques used for the sample characterization are current-voltage measurements and capacitance transient spectroscopy.     

Formation of transition metal hydrides at high pressures

Silane (SiH₄) is found to (partially) decompose at pressures above 50 GPa at room temperature into pure Si and H₂. The released hydrogen reacts with surrounding metals in the diamond anvil cell to form metal hydrides. A formation of rhenium hydride is observed after the decomposition of silane and reaction of hydrogen with Re gasket. From the data of a previous experimental report [M.I. Eremets, I.A. Trojan, S.A. Medvedev, J.S. Tse, Y. Yao, Science 319 (2008) 1506], the claimed high-pressure metallic and superconducting phase of silane is identified as platinum hydride, that forms after the decomposition of silane. These observations show the importance of taking into account possible chemical reactions that are often neglected in high-pressure experiments.     

Thermodynamics of ice at high pressures and low temperatures

A new equation of state of ice Ih recently proposed by Feistel and Wagner [J. Phys. Chem. Ref. Data 35 (2006) 1021-1047] is used to study the phenomena related to the equilibrium isentropic compression of an ice-water mixture and dynamic loading of solid ice. New results are presented concerning the properties of the new equation of state, equilibrium solid-liquid phase transitions and Hugoniots of low-temperature (100 K) and temperate (263 K) shock-compressed ice.     

Superconductivity in metastable Pd-alloys produced by ion implantation at low temperatures

Superconductivity was observed in Pd after implantation of H, D, B and C at liquid He-temperatures. The results support the assumption of a large electron-phonon coupling by partially unscreened protons and deuterons.     

Electrical conductivity and thermal EMF of CsI at high pressures

Abstract

The pressure dependence of thermal EMF and the resistivity-temperature dependence of CsI has been measured at pressures 20-50 GPa. In CsI non-monotonous change of resistivity, thermal EMF and activation energy of charge carriers has been observed at pressures above 40 GPa. The sign of thermal EMF corresponds to the electron conductivity. At pressures below 47 GPa the resistivity-temperature dependence is of the type characteristic of non-degenerate semiconductors, at pressure above 49 GPa it is characteristic of degenerate semiconductors (or metals). The observed properties are connected probably with the continuous distortion of B2 to an hcp-like phase.     

Formation of Cu nanoparticles in GaAs using MeV ion implantation followed by thermal annealing

Analytical electron microscopy, high-resolution X-ray diffraction and combined Rutherford backscattering spectrometry and channeling experiments have been used to investigate the radiation damage and the effect of post-implantation annealing on the microstructure of GaAs(100) single crystals implanted with 1.00 MeV Cu⁺ ions to a dose of ≈ 3×10¹⁶ cm^-2 at room temperature. The experiments reveal the formation of a thick and continuous amorphous layer in the as-implanted state. Annealing up to 600 °C for 60 min does not result in the complete recovery of the lattice order. The residual disorder in GaAs has been found to be mostly microtwins and stacking fault bundles. The redistribution of implanted atoms during annealing results in the formation of nano-sized Cu particles in the GaAs matrix. The X-ray diffraction result shows a cube-on-cube orientation of the Cu particles with the GaAs lattice. The depth distribution and size of the Cu particles have been determined from the experimental data. A tentative explanation for these results is presented. Received: 15 February 1999 / Accepted: 18 February 1999 / Published online: 28 April 1999     

Formation of copper silicides by high dose metal vapor vacuum arc ion implantation

Si(1 1 1) was implanted by copper ions with different doses and copper distribution in silicon matrix was obtained. The as-implanted samples were annealed at 300 and 540 °C, respectively. Formation of copper silicides in as-implanted and annealed samples were studied. Thermodynamics and kinetics of the reaction were found to be different from reaction at copper–silicon interface that was applied in conventional studies of copper–silicon interaction. The defects in silicon induced by implantation and formation of copper silicides were recognized by Si(2 2 2) X-ray diffraction (XRD).     

On the electronic structures of some conductive one-dimensional metal-glyoximes at high pressures

Bis(dimethylglyoximato)Pt(II)(PtDMG)₂) and its related complexes exhibit a remarkable decrease in electrical resistance at high pressures. The least resistivity and the activation energy observed for Pt(DMG)₂ are 10^?1 Ω-cm and 5 × 10^?3 eV, respectively. These low values are tentatively attributed to the effect of hyperconjugation to methyl substituent on the electric polarizability in the ligand.     

Anomalous compressibility and metallization of deuterium and hydrogen at high pressures

The high compressibilities recorded in experiments on liquid-deuterium compression and the significant scatter of experimentally measured densities in the region of anomalous compressibilities are explained by the manifestations of an unusual dielectric-metal phase transition: from a dense molecular gas to a liquid-metal atomic gas. This transition has previously been described by us and called the dissociative phase transition (DPT). The dissociative equilibrium curves, the isotherms, the DPT binodal, and the Hugoniot adiabat have been calculated. The DPT has been shown to be a transition of a new, non-van der Waals type.     

高温高压下稠密氢的离解与电离

应用自恰变分自由能模型描述了在化学平衡下,H2,H,H ,e构成地混合物在天体物理和高压实验中遇到情形下的各种相互作用及压力与温度效应引起地离解和电离现象.目前的模型预测了在压力电离区存在一热力学不稳定状态,当温度Tc=15.5 kK,压力Pc=58.3 GPa和密度ρc=0.3226 g/cm3时发生等离子体相变,此理论预测结果与各种模型计算结果进行了比较分析.