Metal-assisted SIMS and cluster ion bombardment for ion yield enhancement

In addition to structural information, a detailed knowledge of the local chemical environment proves to be of ever greater importance, for example for the development of new types of materials as well as for specific modifications of surfaces and interfaces in multiple fields of materials science or various biomedical and chemical applications. But the ongoing miniaturization and therefore reduction of the amount of material available for analysis constitute a challenge to the detection limits of analytical methods. In the case of time-of-flight secondary ion mass spectrometry (TOF-SIMS), several methods of secondary ion yield enhancement have been proposed. This paper focuses on the investigation of the effects of two of these methods, metal-assisted SIMS and polyatomic primary ion bombardment. For this purpose, thicker layers of polystyrene (PS), both pristine and metallized with different amounts of gold, were analyzed using monoatomic (Ar⁺, Ga⁺, Xe⁺, Bi⁺) and polyatomic (SF₅⁺, Bi₃⁺, C₆₀⁺) primary ions. It was found that polyatomic ions generally induce a significant increase of the secondary ion yield. On the other hand, with gold deposition, a yield enhancement can only be detected for monoatomic ion bombardment.     

Simulation of radiation damage in materials under high fluence ion bombardment

The results of analytical estimations and computer simulation of a radiation damage level dpa are presented and discussed taking into account the material sputtering under ion bombardment. It is shown that the calculations of a stationary level of radiation damage are necessary for the interpretation of regularities of a radiation damage in materials under high fluence ion bombardment.     

Secondary ion emission under the bombardment of Si by multiply charged Si q+ ions

The spectra of secondary ion emission under the bombardment of a B-doped Si target by multiply charged Si ^q+ ions (q = 1?C5) have been studied in the energy range of 1 to 10 keV per unit of charge. A multifold increase in the yield of secondary cluster Sk _n ⁺ ions, multiply charged Si ^q/+ ion (q = 1?C3), and H⁺, C⁺, B⁺, Si₂N⁺, Si₂O⁺ is observed as the charge of the multiply charged ions increases. The increase in the yield of secondary ions with increasing charge of the multiply charged-ion charge is most significant for ions with relatively high ionization potentials.     

On the nature of ion bombardment-induced phase transformations in films of transition metals

Abstract

Electron diffraction studies have been made of polycrystalline Ni films irradiated with well separated beams of ions of different nature, namely ions of inert (He⁺, Ne⁺, Ar⁺, Kr⁺, Xe⁺) and reactive (N⁺ and O⁺) gases. The Ni films were prepared under vacuum conditions (P? 3·10^?6Pa during evaporation) preventing an appreciable contamination of the films with impurities. The samples were irradiated at T? 300 K with ion beams of energies from 10 to 100 keV in the dose range between 5·10¹⁶ cm^?2 and the value leading to sample destruction.

Irradiation with noble gas ions revealed no phase transitions in the Ni films. A similar result was obtained in irradiation of Fe and Cr films with He⁺ ions. The bombardment of Ni films with reactive gas ions does cause changes in the lattice structure of the samples under study, depending on the nature of the bombarding ions. The N⁺ ion bombardment gives rise to the hcp phase with the lattice parameters typical of the Ni₃N compound, and the O⁺ ion bombardment results in the fcc phase with the NiO-type parameter.

The conclusion is drawn on the chemical origin of the phase transformations in the Ni films under ion bombardment. The necessity of revising the concept about the polymorphous nature of phase transformations induced in the films of transition metals by ion bombardment is substantiated.     

Computer simulation of knock-on effect under ion bombardment

A knock-on effect appearing in ion bombardment was studied from computer simulation. The preliminary results obtained for the bombardment of 4 keV Ar⁺ ion on Cu target having a random lattice are briefly described.     

A SIMS study of ion beam induced migration of nitrogen in thermally oxidized silicon

The potential use of thin silicon nitroxide films as gate dielectrics in VLSI MOS devices has motivated much recent work. The present study shows that positive ion bombardment, as encountered in sputter depth profiling or ion implantation, can induce considerable movement of nitrogen in thin thermal oxide films on silicon. Low energy N⁺₂ implants are performed in-situ in a SIMS apparatus and are subsequently depth profiled. The effect of implant dose and oxide thickness are examined and comparisons are made to films prepared by rapid thermal nitridation and LPCVD. Profiles obtained under O⁺₂, O^-, and Cs⁺ bombardment are also compared. SIMS depth profiles of implanted 200 Å oxides using positive ion bombardment show a depletion of nitrogen near the surface, a shoulder in the nitrogen concentration near the Si-SiO₂ interface, and a peak in this concentration at the interface. Negative ion bombardment did not induce a shoulder-peak structure at the interface. The implications of these results are discussed.     

Field ion and scanning tunnel microscopy studies of surface and bulk defects in carbon and silicon

Complex study of surface and bulk defects was performed by field ion and scanning tunnel microscopy. Specimens were irradiated by 20-to 50-keV He⁺, Ar⁺, and Bi⁺ ions at room temperature. The irradiation fluences were between 10¹⁸ and 10²⁰ ion m⁻². Calculated parameters of depletion zones and atomic displacement cascades were compared with theoretical estimates. It was shown that controlled ion bombardment of material surface is an effective tool for fabricating field-emission cathodes for vacuum microelectronics.     

Coulomb heating behavior of fast light diclusters thorough the Si ⟨ 110 ⟩ direction: influence of the mean charge state

Based on the algebraic method (AM) and the energy consistent method (ECM), an AM-ECM protocol for analytical potential energy curves of stable diatomic electronic states is proposed as functions of the internuclear distance. Applications of the AM-ECM to the 6 hydride electronic states of HF-X ¹ Σ ⁺, DF-X ¹ Σ ⁺, D³⁵Cl-X ¹ Σ ⁺, ⁶LiH-X ¹ Σ ⁺, ⁷LiH-X ¹ Σ ⁺, and ⁷LiD-X ¹ Σ ⁺ show that the AM-ECM potentials are in excellent agreement with the experimental RKR data and the full AM-RKR data, and that the AM-ECM can obtain reliable analytical potential energies in the molecular asymptotic and dissociation region for these molecular electronic states.     

Energy transfer to a copper surface by low energy noble gas ion bombardment

The energy transferred to a copper surface by bombardment with Xe⁺, Ar⁺, and He⁺ ions with kinetic energies in the range 100–4000 eV has been studied by our group in previous experiments. There were significant experimental uncertainties for that data at energies below about 200 eV. The present investigation overlaps the previous work, extends the energy range to 10 eV, and includes data for Ne⁺. Particular emphasis is placed on the energy range below 200eV. A specially designed ion source was employed in these experiments. A polycrystalline copper film deposited onto a highly sensitive calorimeter was used as the target material. The results show that the Xe⁺ ion deposits more than 97% of its energy over the entire range investigated whereas the lighter ions deposit a decreasing fraction of their energy below about 1 keV. The decrease is largest for the lightest ion (He⁺). In all cases the deposited energy is about or more than 70% of the incident energy. It will be shown that the present results are in agreement with previous measurements for copper and are qualitatively in good agreement with computer calculations using the TRIM.SP code.On leave from: Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, W-5170 Jülich, Fed. Rep. Germany     

Using polyatomic primary ions to probe an amino acid and a nucleic base in water ice

In this study on pure water ice, we show that protonated water species [H₂O]_nH⁺ are more prevalent than (H₂O)_n⁺ ions after bombardment by Au⁺ monoatomic and Au₃⁺ and C₆₀⁺ polyatomic projectiles. This data also reveals significant differences in water cluster yields under bombardment by these three projectiles. The amino acid alanine and the nucleic base adenine in solution have been studied and have been shown to have an effect on the water cluster ion yields observed using an Au₃⁺ ion beam.     

Anomalous enhancement of negative sputtered ion emission by oxygen

Enhancement of negative sputtered ion yields by oxygen (either O⁺₂ bombardment or O₂ gas with Ar⁺ bombardment) is demonstrated for Si^?, As^?, P^?, Ga^?, Cu^? and Au^?, sputtered from a variety of matrices. Because oxygen also enhances positive ion yields of the same species, this effect cannot be simply explained on the basis of existing sputtered ion emission models. To rationalize these phenomena, a surface polarization model is developed which invokes localized electron emissive or electron retentive sites associated with differently oriented surface dipoles in the oxygenated surface. Such sites are considered to dominate the emission of negative and positive ions respectively. The model is shown to correctly predict that Au⁺ and Au^? ion yields are much more strongly enhanced by oxygen in dilute Au-Al alloys than in pure gold.     

Analysis of TOF-SIMS spectra from fullerene compounds

We analyzed TOF-SIMS spectra obtained from three different size of fullerenes (C₆₀, C₇₀ and C₈₄) by using Ga⁺, Au⁺ and Au₃⁺ primary ion beams and investigated the fragmentation patterns, the enhancement of secondary ion yields and the restraint of fragmentation by using cluster primary ion beams compared with monoatomic primary ion beams. In the TOS-SIMS spectra from C₇₀ and C₈₄, it was found that a fragment ion, identified as C₆₀⁺ (m/z = 720), showed a relatively high intensity compared with that of other fragment ions related to C₂ depletion. It was also found that the Au₃⁺ bombardment caused intensity enhancement of intact molecules (C₆₀⁺, C₇₀⁺ and C₈₄⁺) and restrained the fragmentation due to C₂ depletion.     

Spectroscopic characteristics of anionic centers in α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> crystals bombarded by Cu<Superscript>+</Superscript> and Ti<Superscript>+</Superscript> ions

We have studied the effect of bombardment by Cu⁺ and Ti⁺ ions with energy 30 keV on the optical absorption and luminescence of F centers in oxygen-deficient aluminum oxide. We have shown that in the induced optical absorption spectra there are six components of gaussian shape, which can be assigned to absorption bands of F⁺, F², and F₂⁺ centers. We have established that bombardment of the samples by ion beams has a weak effect on the thermoluminescence parameters in the 3.0 eV and 2.4 eV bands, while in the 3.8 eV luminescence band for F⁺ centers, the thermoluminescent response increases considerably. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 422–424, May–June, 2008.     

Molecular ion yield enhancement induced by gold deposition in static secondary ion mass spectrometry

Static ToF-SIMS was used to evaluate the effect of gold condensation as a sample treatment prior to analysis. The experiments were carried out with a model molecular layer (Triacontane M = 422.4 Da), upon atomic (In⁺) and polyatomic (Bi₃⁺) projectile bombardment. The results indicate that the effect of molecular ion yield improvement using gold metallization exists only under atomic projectile impact. While the quasi-molecular ion (M+Au)⁺ signal can become two orders of magnitude larger than that of the deprotonated molecular ion from the pristine sample under In⁺ bombardment, it barely reaches the initial intensity of (M−H)⁺ when Bi₃⁺ projectiles are used. The differences observed for mono- and polyatomic primary ion bombardment might be explained by differences in near-surface energy deposition, which influences the sputtering and ionization processes.     

Molecular effects in ion-induced secondary electron spectra

The energy spectra of slow secondary electrons from a copper surface under bombardment with H⁺, H⁺₂, and H⁺₃ ions have been measured at an energy of 200 keV/atom. Distinct molecular effects are revealed in the ratios of the respective distribution curves for molecular ion and proton impact.     

Study of S ion-assisted sulfurization of n-GaAs (1 0 0) surface

The chemical structure and site location of sulfur atoms on n-GaAs (1 0 0) surface treated by bombardment of S⁺ ions over their energy range from 10 to 100 eV have been studied by X-ray photoelectron spectroscopy and low energy electron diffraction. The formation of Ga-S and As-S species on the S⁺ ion bombarded n-GaAs surface is observed. An apparent donor doping effect is observed for the n-GaAs by the 100 eV S⁺ ion bombardment. It is found that the S⁺ ions with higher energy are more effective in the formation of Ga-S species, which assists the n-GaAs (1 0 0) surface in reconstruction into an ordered (1 × 1) structure upon subsequent annealing. The treatment is further extended to repair Ar⁺ ion damaged n-GaAs (1 0 0) surface. It is found that after a n-GaAs (1 0 0) sample is damaged by 150 eV Ar⁺ ion bombardment, and followed by 50 eV S⁺ ion treatment and subsequent annealing process, finally an (1 × 1) ordering GaAs (1 0 0) surface with low surface states is obtained.     

Three-photon annihilation of the electron-positron pairs

Three-photon annihilation of the electron-positron pairs (=(e⁻,e⁺)-pairs) is considered in the electron rest frame. The energy of the incident positron can be arbitrary. The analytical expression for the cross-section of three-photon annihilation of the (e⁻,e⁺)-pair has been derived and investigated.     

Cation disorder in NaW2O6+δ·nH2−zO post-ion exchange with K, Rb, Sr, and Cs

The structure of the defect pyrochlore NaW₂O_6+δ·nH_2−zO after ion exchange with K, Rb, Sr or Cs for Na has been investigated using thermal analysis, solid-state nuclear magnetic resonance, laboratory X-ray and neutron diffraction methods. Neutron diffraction studies show that both the A-type cations (Na⁺, K⁺, Rb⁺, and/or Cs⁺) and the water molecules reside within the channels that form in the 111 direction of the W₂O₆ framework and that these strongly interact. The analytical results suggest that the water and A-type cations compete for space in the tunnels within the W₂O₆ pyrochlore framework, with the total number of water molecules and cations being approximately constant in the six samples investigated. The interplay between the cations and water explains the non-linear dependence of the a lattice parameter on the choice of cation. It appears that the ion-exchange capacity of the material will be controlled by the amount of water initially present in the sample.     

Energy distributions of atomic and molecular ions sputtered by C60 projectiles

In the process of investigating the interaction of fullerene projectiles with adsorbed organic layers, we measured the kinetic energy distributions (KEDs) of fragment and parent ions sputtered from an overlayer of polystyrene (PS) oligomers cast on silver under 15 keV C₆₀⁺ bombardment. These measurements have been conducted using our TRIFT™ spectrometer, recently equipped with the C₆₀⁺ source developed by Ionoptika, Ltd. For atomic ions, the intensity corresponding to the high energy tail decreases in the following order: C⁺(E^−0.4) > H⁺(E^−1.5) > Ag⁺(E^−3.5). In particular, the distribution of Ag⁺ is not broader than those of Ag₂⁺ and Ag₃⁺ clusters, in sharp contrast with 15 keV Ga⁺ bombardment. On the other hand, molecular ions (fragments and parent-like species) exhibit a significantly wider distribution using C₆₀⁺ instead of Ga⁺ as primary ions. For instance, the KED of Ag-cationized PS oligomers resembles that of Ag⁺ and Ag_n⁺ clusters. A specific feature of fullerene projectiles is that they induce the direct desorption of positively charged oligomers, without the need of a cationizing metal atom. The energy spectrum of these PS⁺ ions is significantly narrower then that of Ag-cationized oligomers. For characteristic fragments of PS, such as C₇H₇⁺ and C₁₅H₁₃⁺ and polycyclic fragments, such as C₉H₇⁺ and C₁₄H₁₀⁺, the high energy decay is steep (E⁻⁴ − E⁻⁸). In addition, reorganized ions generally show more pronounced high energy tails than characteristic ions, similar to the case of monoatomic ion bombardment. This observation is consistent with the higher excitation energy needed for their formation. Finally, the fraction of hydrocarbon ions formed in the gas phase via unimolecular dissociation of larger species is slightly larger with gallium than with fullerene projectiles.     

Influence of argon ion bombardment on the formation of intermetallic compounds in the nickel-aluminum system

The formation of Ni _x Al _y intermetallic compounds in two-layer (Ni/Al) structures (nickel films deposited on aluminum substrates in vacuum) under bombardment by Ar⁺ ions has been studied experimentally. The method based on Rutherford backscattering of He⁺ ions is used to demonstrate that argon ion bombardment causes the formation of intermetallic compounds in the near-surface layer. The thickness of the intermetallic layer formed in the near-surface region substantially exceeds the projective ion path. The composition and thickness of the intermetallic layer depend mainly on the implantation dose and the substrate temperature, rather than on the ion current density. In the intermetallic layer, the content of nickel increases with increasing temperature. It has been established that, in the absence of bombardment, intermetallic phases are not observed at temperatures lower than T = 400°C and that, in the presence of bombardment, the Ni₃Al intermetallic layer arises at a temperature of 320°C.