CdTe太阳电池前电极SnO2:F/SnO2复合薄膜性能分析

减薄CdS窗口层是提高CdS/CdTe太阳电池转换效率的有效途径之一,减薄窗口层会对器件造成不利的影响,因此在减薄了的窗口层与前电极之间引入过渡层非常必要.利用反应磁控溅射法在前电极SnO₂:F薄膜衬底上制备未掺杂的SnO₂薄膜形成过渡层,并将其在N₂/O₂=4 ∶1,550 ℃环境进行了30 min热处理,利用原子力显微镜、X射线衍射仪、紫外分光光度计对复合薄膜热处理前后的形貌、结构、光学性能进行了表征,同时分析了复     

紫外波段有机染料DMT掺杂SiO2薄膜的光谱特性

本文采用溶胶凝胶法合成了紫外波段有机染料DMT掺杂SiO₂薄膜和块体材料薄膜中掺杂浓度高达124×10^-2mol/L,块体材料浓度掺至15×10^-3mol/L由于SiO₂“笼”的束缚作用,在荧光光谱中未观察到荧光猝灭现象;由于SiO₂“笼”的极化作用,370nm的发射峰较其在环己烷中发生了34～44nm左右的红移;580～590nm的发射峰的量子效率比370nm的发射峰略高.     

VO2热致变色薄膜的结构和光电特性研究

用磁控溅射方法制备了VO₂热致变色薄膜.用X射线衍射、X射线光电子谱和原子力显微镜对薄膜的宏观及微观结构进行了分析，表明VO₂薄膜纯度高、相结构单一、结晶度好.薄膜的光透过率在2000nm处相变前后改变了42%，高/低温电阻率变化达到三个数量级以上.薄膜的光透过谱和相变过程中电学性质变化的研究与结构分析结果相一致. 关键词：     

In2O3/SnO2薄膜的制备及光谱反射性能研究

开展了在伪装网基布上镀In₂O₃/SnO₂薄膜的性能研究,系统分析了薄膜厚度对其光谱反射性能的影响;总结了薄膜厚度对In₂O₃/SnO₂薄膜表面形貌、光谱反射辐射性能的影响规律,为In₂O₃/SnO₂薄膜的红外伪装应用奠定了基础理论和实验依据. 关键词： 2O₃/SnO₂薄膜')" href="#">In₂O₃/SnO₂薄膜 红外反射特性 红外发射率 可见光—近红外透过率     

Nb/SnO2复合薄膜的制备、结构及光电性能

用溶胶-凝胶旋涂法在玻璃基底上制备出Nb/SnO₂复合透明导电薄膜,利用XRD,SEM,紫外—可见分光光度计,四探针电阻仪等测试方法对Nb/SnO₂复合薄膜的结构和物性进行了研究.结果表明: 当Nb含量小于0.99at%时,Nb/SnO₂复合薄膜为较纯的四方金红石结构;复合薄膜中晶粒分布均匀,平均尺寸在5—7 nm.当Nb含量小于0.99at%时,Nb/SnO₂复合薄膜的电阻率先减小后增大,当Nb含量为0.37at%时 关键词： 溶胶-凝胶法 2复合薄膜')" href="#">Nb/SnO₂复合薄膜 结构表征 光电性能     

溅射a-GeNx和a-GeNx:H薄膜的制备及光电特性的研究

本文报道了应用射频反应溅射法制备a-GeN_x和a-GeN_x:H薄膜的工艺条件及其基本的光电特性,并报道了它的IR和Raman特性,讨论了掺氮对a-GeN_x:H膜带尾态ΔE,IR谱及Raman谱的影响。 关键词：     

紫外波段有机染料DMT掺杂SiO2薄膜的光谱特性

本文采用溶胶 凝胶法合成了紫外波段有机染料DMT掺杂SiO2 薄膜和块体材料 薄膜中掺杂浓度高达 1 2 4× 1 0 - 2 mol/L ,块体材料浓度掺至 1 5× 1 0 - 3mol/L 由于SiO2“笼”的束缚作用 ,在荧光光谱中未观察到荧光猝灭现象 ;由于SiO2 “笼”的极化作用 ,370nm的发射峰较其在环己烷中发生了 34～ 44nm左右的红移 ;580～ 590nm的发射峰的量子效率比 370nm的发射峰略高     

用SiCl4/H2气源沉积多晶硅薄膜光照稳定性的研究

对以SiH₄/H₂及SiCl₄/H₂为源气体、采用 等离子体增强化学气相沉积技术制备的非晶硅薄膜和多晶硅薄膜进行了光照稳定性的研究.实验表明，制备的多晶硅薄膜并没有出现 非晶硅中的光致衰减现象，其光电导、暗电导在光照过程中没有下降反而有所上升且电导率 变化快慢受氢稀释度的制约.多晶硅薄膜的光照稳定性可能来源于高的晶化度及Cl元素的存在. 关键词： 多晶硅薄膜 稳恒光电导效应 晶界 光致衰退效应     

层状钙钛矿结构铁电薄膜SrBi2Ta2O9的掺杂改性研究

研究了Nb掺杂对层状钙钛矿结构铁电薄膜SrBi₂Ta₂O₉(SBT)的改性，分析了其改性机理.利用光声光谱技术对不同含量Nb掺杂SBT薄膜的可见光吸收进行了分析.结果表明掺杂SBT薄膜在580nm处的吸收带随Nb含量的增加发生红移，这暗示掺杂SBT薄膜的能隙与Nb含量有关.对掺杂SBT薄膜的铁电性质研究表明，薄膜的剩余极化值依赖于薄膜中的Nb含量，这与薄膜存在相界有关. 关键词：     

新型透明导电薄膜ErF3掺杂In2 O3的研制

利用电子束沉积技术首次制备了氟化铒 (ErF₃) 掺杂的氧化铟(In₂O₃)透明导电薄膜(IEFO),研究了薄膜的晶体结构、光学特性和电学特性。利用原子力显微镜测试了不同厚度薄膜的形貌,初步研究了薄膜的生长过程。研究发现:IEFO薄膜为多晶结构,Er原子的掺入改变了薄膜的优势生长方向,使薄膜在(211)、(222)、(444)3个方向上的生长趋势基本相同。 薄膜电阻率为1.265×10^-3 Ω·cm,电子迁移率为45.76 cm²·V^-1·s^-1,电子浓度为1.197×10²⁰ cm^-3,在380~780 nm范围内的可见光平均透过率为81%。     

非晶SnO2:(Cu,In)薄膜的荧光特性及带尾态

用反应蒸发法在玻璃等衬底上制备出铜和铟掺杂的氧化锡SnO2:(Cu,In)薄膜.对制备薄膜的发光性质做了研究,制备样品为非晶态,具无定形结构.测量了薄膜在220-1100 nm范围的透过率,得到的带隙宽度Eopt g=4.645 eV.室温条件下对样品进行光致发光测量,得到了显著的紫外(276-550 nm)蓝绿光连续谱,通过发光谱的研究给出了这种材料的隙态分布.     

Cu(In,Sn)Se2 thin films for absorption of energy from infrared radiation

In this study, we sought to lower the bandgap of thin film solar cells by replacing the Ga used in the absorber layer of Cu(In,Ga)Se₂ with Sn (bandgap of 0.07?eV) to form Cu(In,Sn)Se₂. The proposed scheme was shown to reduce the bandgap of the absorber layer from 1.0?eV to 0.88?eV. Sn films of various thicknesses were deposited using precursors of Sn–In–Cu metal in order to study the effects of Sn/(In?+?Sn) ratio (SIR) on the structure of the material and photoelectrical characteristics of the Cu(In,Sn)Se₂ absorber layer. Experiment results revealed that a higher SIR following selenization increased the grain size and surface roughness of the absorber layer. It increased the quantity of secondary phases of SnSe₂ and Cu₂SnSe₃ and improved the distribution of Cu and In in the absorber layer. A higher SIR was also shown to increase electron mobility while decreasing carrier concentration and conductivity. When SIR≧0.25, the replacement of In³⁺ with Sn⁴⁺in the Cu⁺ vacancies decreased the electron strength of In. We speculate that an increase in SIR caused a relative increase in the quantity of Sn²⁺ compared to Sn⁴⁺, thereby increasing the electron strength of Sn and switching the absorber layer from a p-type to an n-type semiconductor.     

电沉积Cu(In,Ga)Se_2预置层硫化退火制备Cu(In,Ga)(Se,S)_2薄膜及表征

在550℃下的H2S气氛中退火处理电沉积制备的Cu(In,Ga)Se2(CIGS)预置层,制备了太阳电池光吸收层Cu(In,Ga)(Se,S)2(CIGSS)薄膜.采用X射线能量色散谱、俄歇电子能谱、扫描电镜、X射线衍射和拉曼光谱对退火前后的薄膜进行表征.结果表明,H2S气氛下退火能够实现薄膜中O的去除和S的掺入,同时使得各元素的纵向分布更加均匀并可消除Cu-Se微相.此外,H2S退火还可改善薄膜的结晶性能,并使S和Ga进入黄铜矿结构,薄膜晶格参数变小.     

Cu(In,Ga)Se2太阳能电池快速热退火效应

利用光致发光（PL）分析快速热退火对Cu(In,Ga)Se2 (CIGS)电池的影响,研究退火对薄膜缺陷的影响。Cu(In,Ga)Se2电池的PL谱中总共有 7个峰,即2个可见波段峰和5个红外波段峰。退火温度较低,可减少薄膜体内缺陷,提高载流子浓度,改善薄膜质量;退火温度过高,则会引起正常格点处元素扩散,元素化学计量比改变,体内缺陷增加,吸收层带隙降低,反而会对CIGS薄膜造成破坏。     

低温超薄高效Cu(In,Ga)Se2太阳电池的实现

衬底温度保持恒定, 在Se气氛下按照一定的元素配比顺序蒸发Ga, In, Cu制备厚度约为0.7 μrm的Cu(In_0.7Ga_0.3)Se₂ (CIGS)薄膜. 利用X射线衍射仪分析薄膜的晶体结构及物相组成, 扫描电子显微镜表征薄膜形貌及结晶质量, 二次离子质谱仪测试薄膜内部元素分布, 拉曼散射谱 分析薄膜表面构成, 带积分球附件的分光光度计测量薄膜光学性能. 研究发现在Ga-In-Se预制层内, In主要通过晶界扩散引起Ga/(Ga+In)分布均匀化. 衬底温度高于450 ℃时, 薄膜呈现单一的Cu(In_0.7Ga_0.3)Se₂相; 低于400℃, 薄膜存在严重的Ga的两相分离现象, 且高含Ga相主要存在于薄膜的上下表面; 低于300 ℃, 薄膜结晶质量进一步恶化. 薄膜表层的高含Ga相Cu(In_0.5Ga_0.5)Se₂以小晶粒形式均匀分布于薄膜表面, 增加了薄膜的粗糙度, 在电池内形成陷光结构, 提高了超薄电池对光的吸收. 加上带隙值较小的低含Ga相的存在, 使电池短路电流密度得到较大改善. 衬底温度在550 ℃–350 ℃变化时, 短路电流密度J_SC是影响超薄电池转换效率的主要因素; 而衬底温度T_sub低于300 ℃时, 开路电压V_OC和填充因子FF降低已成为电池性能减退的主要原因. T_sub为350 ℃时制备的0.7 μm左右的超薄CIGS电池转换效率达到了10.3%. 关键词： 2薄膜')" href="#">Cu(In,Ga)Se₂薄膜 衬底温度 超薄 太阳电池     

Enhancements in specimen preparation of Cu(In,Ga)(S,Se)2 thin films

When producing slices from Cu(In,Ga)(S,Se)(2) thin films for solar cells by use of a focused ion beam (FIB), agglomerates form on the Cu(In,Ga)(S,Se)(2) surfaces, which deteriorate substantially the imaging and analysis in scanning electron microscopy. Similar problems are also experienced when depth-profiling Cu(In,Ga)(S,Se)(2) thin films by means of glow-discharge or secondary ion mass spectrometry. The present work shows that the agglomerates are composed of (mainly) Cu, and that their formation may be impeded considerably by either cooling of the sample or by use of reactive gases during the ion-beam sputtering. The introduction of XeF(2) during FIB slicing resulted in excellent images, in which the microstructures of most layers in the Cu(In,Ga)(S,Se)(2) thin film stack are visible, including the microstructure of the 20 nm thin MoSe(2) layer. Acquisition of high-quality two-dimensional and also three-dimensional electron backscatter diffraction data was possible. The present work gives a basis for enhanced SEM imaging and analysis not only in the case of Cu(In,Ga)(S,Se)(2) thin films but also when dealing with further material systems exhibiting similar formations of agglomerates.     

Cu(In,Ga)Se2 thin film solar cells from nanoparticle precursors

A non-vacuum process for Cu(In,Ga)Se₂ (CIGS) thin film solar cells from nanoparticle precursors was described in this work. CIGS nanoparticle precursors was prepared by a low temperature colloidal route by reacting the starting materials (CuI, InI₃, GaI₃ and Na₂Se) in organic solvents, by which fine CIGS nanoparticles of about 15 nm in diameter were obtained. The nanoparticle precursors were then deposited onto Mo/glass substrate by the doctor blade technique. After heat treating the CIGS/Mo/glass layers in Se gas atmosphere, a complete solar cell structure was fabricated by depositing the other layers including CdS buffer layer, ZnO window layer and Al electrodes by conventional methods. The resultant solar cell showed a conversion efficiency of 0.5%.     

Effects of heavy alkali elements in Cu(In,Ga)Se2 solar cells with efficiencies up to 22.6%

We report on the use and effect of the alkali elements rubidium and caesium in the place of sodium and potassium in the alkali post deposition treatment (PDT) as applied to Cu(In,Ga)Se₂ (CIGS) solar cell absorbers. In order to study the effects of the different alkali elements, we have produced a large number of CIGS solar cells with high efficiencies resulting in a good experimental resolution to detect even small differences in performance. We examine the electrical device parameters of these fully functional devices and observe a positive trend in the I –V parameters when moving from devices without PDT to KF‐, RbF‐, and eventually to CsF‐PDT. A diode analysis reveals an improved diode quality for cells treat‐ed with heavier alkalis. Furthermore, secondary ion mass spectrometry (SIMS) measurements reveal a competitive mechanism induced within the class of alkali elements in the CIGS absorber induced by the alkali post deposition treatment. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Cu(In,Ga)Se2太阳能电池快速热退火效应

利用光致发光（PL）分析快速热退火对Cu(In,Ga)Se2 (CIGS)电池的影响,研究退火对薄膜缺陷的影响。Cu(In,Ga)Se2电池的PL谱中总共有 7个峰,即2个可见波段峰和5个红外波段峰。退火温度较低,可减少薄膜体内缺陷,提高载流子浓度,改善薄膜质量;退火温度过高,则会引起正常格点处元素扩散,元素化学计量比改变,体内缺陷增加,吸收层带隙降低,反而会对CIGS薄膜造成破坏。     

Cu元素对Cu(In,Ga)Se_2薄膜及太阳电池的影响

Cu元素成分对Cu(In,Ga)Se2(简称CIGS)薄膜材料的电学性质及其电池器件性能有很重要的影响.本文利用蒸发法制备了贫Cu和富Cu的CIGS吸收层(0.7Cu/(Ga+In)1.15)及相应的电池器件.扫描电镜和Hall测试发现,富Cu材料的结构特性(晶粒大、结晶状态好)和电学特性(电阻率低、迁移率高等)优于贫Cu材料,而性能测试表明贫Cu器件的效率优于富Cu器件.变温性能测试分析表明,贫Cu器件的主要复合路径是体复合,激活能与CIGS禁带宽度相当;富Cu器件的主要复合路径是界面复合,其激活能远小于CIGS禁带宽度,这大大降低了开路电压Voc,从而降低了电池效率.最后利用蒸发三步法制备了体材料稍富Cu表面贫Cu的CIGS吸收层,降低了短路电流和开路电压的损失,获得了超过15%的电池效率.