Kicked quantum circuits with charge discreteness: Resonance condition

In this work we study a quantum electrical circuit with charge discreteness perturbed by periodic external kicks. Time evolution equations, for energy and electrical current, are solved analytically. Time evolution fluctuations are also studied and they become bounded. Resonances are well characterized including arbitrary (generic) quantum circuits with charge discreteness.     

Analysis of quantum well size alteration effects on slow light device based on excitonic population oscillation

In this paper we investigate the effects of quantum well size changes on slow light device properties. The principle properties such as center frequency and slow down factor of a slow light device are affected by changing the size of quantum well. In this way, the effects of quantum well size on Oscillator Strength and binding energy of exciton are considered separately. First, we investigate the variations in oscillator strength of exciton due to different quantum well size. Second, exciton binding energy level shift due to size of quantum well is investigated. According to this analysis, we have developed a new method for tuning slow light device bandwidth center frequency and slow down factor. Analysis and simulation of a basic GaAs/AlGaAs quantum wells optical slow light device based on excitonic population oscillation shows that size of quantum wells could tune both of the frequency properties and slow down factor of an optical slow light device. Simulation results show that slow down factor and oscillation strength of exciton are proportional to each other in direct manner. Moreover, decreasing the quantum well width, causes enhancement in binding energy of excitons. These achievements are useful in optical nonlinearity enhancements, all-optical signal processing applications and optical communications.     

Quantum wells for femtosecond optoelectronics applications

The ultrafast nonlinear optical properties of quantum well excitons have been studied extensively in recent years. Quantum well excitons, which are sharp and well-resolved at room temperature, are well suited to optoelectronics applications, having large electroabsorption response. In this review, we discuss experiments which use simultaneously the nonlinear optical response of the quantum well exciton and the electroabsorption response in order to characterize electrical signals in the femtosecond time scale. In addition, we discuss intrinsic speed limitations in excitonic optoelectronics and extensions to one- and two-dimensional spatiotemporal field mapping.     

High-fidelity quantum sensing of magnon excitations with a single electron spin in quantum dots

Single-electron spins in quantum dots are the leading platform for qubits, while magnons in solids are one of the emerging candidates for quantum technologies. How to manipulate a composite system composed of both systems is an outstanding challenge. Here, we use spin-charge hybridization to effectively couple the single-electron spin state in quantum dots to the cavity and further to the magnons. Through this coupling, quantum dots can entangle and detect magnon states. The detection efficiency can reach 0.94 in a realistic experimental situation. We also demonstrate the electrical tunability of the scheme for various parameters. These results pave a practical pathway for applications of composite systems based on quantum dots and magnons.     

The dynamical-quantization approach to open quantum systems

The dynamical-quantization approach to open quantum systems does consist in quantizing the Brownian motion starting directly from its stochastic dynamics under the framework of both Langevin and Fokker–Planck equations, without alluding to any model Hamiltonian. On the ground of this non-Hamiltonian quantization method, we can derive a non-Markovian Caldeira–Leggett quantum master equation as well as a non-Markovian quantum Smoluchowski equation. The former is solved for the case of a quantum Brownian particle in a gravitational field whilst the latter for a harmonic oscillator. In both physical situations, we come up with the existence of a non-equilibrium thermal quantum force and investigate its classical limit at high temperatures as well as its quantum limit at zero temperature. Further, as a physical application of our quantum Smoluchowski equation, we take up the tunneling phenomenon of a non-inertial quantum Brownian particle over a potential barrier. Lastly, we wish to point out, corroborating conclusions reached in our previous paper [A. O. Bolivar, Ann. Phys. 326 (2011) 1354], that the theoretical predictions in the present article uphold the view that our non-Hamiltonian quantum mechanics is able to capture novel features inherent in quantum Brownian motion, thereby overcoming shortcomings underlying the Caldeira–Leggett Hamiltonian model.     

Asymmetric quantum dots in an applied electric field: discontinuous electron density

We consider non-interacting electrons in asymmetric quantum dots with either hard wall boundary conditions (rectangular quantum dots) or anharmonic confinement (elliptic quantum dots). In both cases, due to finite size effects, a homogeneous electric field applied along the long axis is shown to induce abrupt changes in the electron density, parallel and perpendicular to the field direction. Making use of this property, we propose a pure electrical mechanism to control the magnitude of the effective exchange interaction between two weakly-coupled quantum dots. This kind of system has been proposed recently as possible realization of quantum gates for quantum computation.     

Study of electron-phonon interaction in quantum wells using optically excited nonequilibrium population of phonons

It is well known that nonequilibrium populations of phonons can be generated in bulk semiconductors by the relaxation of photoexcited hot electrons. In this paper we demonstrate that nonequilibrium phonons can also be generated in quantum wells by picosecond lasers and then probed by time-resolved Raman scattering. Using this method we have studied the interaction between hot electrons and interface and confined LO phonons in GaAs/AlAs quantum wells for well widths varying between 2 to 6 nm. The results are compared quantitatively with three macroscopic models of electron-LO phonon interaction. Only the model proposed by Huang and Zhu agrees both qualitatively and quantitatively with experimental results.     

ELECTRO-LUMINESCENCE AND PHOTO-LUMINESCENCE FROM STRAINED SiGe/Si QUANTUM WELL

Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by molecular beam epitaxy is reported. The SiGe/Si step-graded index quantum well structure is beneficial to the enhancing of electro-luminescence. The optical and electrical properties of this structure are discussed.     

SiGe/Si量子阱的低温光荧光和电注入发光

使用Si-MBE生长了阶梯形折射率分布SiGe/Si量子阱材料,在低温下观测到无声子参与的光荧光和电注入发光。阶梯形折射率分布SiGe/Si电子阱结构有利于提高发光效率。讨论了这种结构的光学和电学特性。     

量子阱结构对有机电致发光器件效率的影响

实验中共制备了五种有机量子阱结构电致发光器件,分别对这五种量子阱结构器件的电致发光特性进行了研究,分析了量子阱结构的周期数和势垒层的厚度对器件电学性能的影响.实验结果表明适当周期数的量子阱结构器件的亮度和电流效率比传统的三层结构器件的要大,主要原因是量子阱结构对电子和空穴的限制作用,这种限制作用提高了电子和空穴在发光层中形成激子和复合的概率,从而提高了发光的亮度和效率.当改变阱结构器件中势阱层的厚度时,也会对器件的亮度和效率产生影响,采用适当的势阱层厚度能够提高器件的亮度和效率. 关键词： 量子阱结构 电致发光 电流效率 光谱     

Comparison between semiclassical and full quantum transport analysis of THz quantum cascade lasers

We implement and compare two theoretical models for stationary electron transport in quantum cascade lasers and Stark ladders. The first one, the nonequilibrium Green's function method is a very general scheme to include coherent quantum mechanics and incoherent scattering with phonons and device imperfections self-consistently. However, it is numerically very demanding and cannot be used for systematic device parameter scans. For this reason, we also implement the approximate, numerically efficient ensemble Monte Carlo method and assess its applicability on the above mentioned transport problems. We identify a transport regime in which results of both methods quantitatively agree. In this regime, the ensemble Monte Carlo method is well suited to propose design improvements.     

不同掺杂类型的GaN间隔层和量子阱垒层对双波长LED作用的研究

采用软件理论分析的方法对不同掺杂类型的GaN间隔层和量子阱垒层在InGaN/GaN多量子阱双波长发光二极管中对发光光强、内量子效率、电子空穴浓度分布、溢出电流等作用进行模拟分析. 分析结果表明,p型掺杂的GaN间隔层与量子阱垒层的引入同不掺杂和n型掺杂两种类型比较,可以大大减少溢出电子流,极大地提高各量子阱内空穴浓度,提高双波长发光二极管的发光强度,极大的改善内量子效率随电流增大而下降问题. 关键词： GaN 掺杂类型 数值模拟 双波长发光二极管     

有机量子阱发光的研究

有机量子阱具有优异的光电性能,在光电子器件中有广泛的应用.论述了如何证明有机量子阱的存在及其国内外研究现状,介绍了有机量子阱在有机电致发光中的应用以及存在的问题,重点是如何利用有机量子阱提高发光性能,并指出了今后的研究方向.     

InGaN/GaN多量子阱蓝色发光二极管的实验与模拟分析

分别采用量子阱模型和量子点模型对蓝色InGaN/GaN多量子阱发光二极管电学和光学特性进行模拟,并和实验测量结果进行了比对,结果发现,量子点模型的引入,很好地解决了I-V和电致发光二方面的实验与理论模型间符合程度不好的问题.同时,在I-V曲线特性模拟中发现,在量子点理论模型的基础上,只有考虑到载流子的非平衡量子传输效应,才能得到和实验相接近的I-V曲线,揭示着在InGaN/GaN 多量子阱发光二极管电输运特性中,载流子的非 关键词： InGaN/GaN 发光二极管 数值模拟 量子点模型     

Theory of electronic and optical properties for different shapes of InAs/In0.52Al0.48As quantum wires

In this work, we propose an efficient method to investigate optical properties as well as their dependence on geometrical parameters in InAs/InAlAs quantum wires. The used method is based on the coordinate transformation and the finite difference method. It provides sufficient accuracy, stability and flexibility with respect to the size and shape of the quantum wire. The electron and hole energy levels as well as their corresponding wave functions are investigated for different shape of quantum wires. The optical transition energies, the emission wavelengths and the oscillator strengths are also studied.     

Single-photon emitters in van der Waals materials

Solid-state sources of single-photon emitters are highly desired for scalable quantum photonic applications, such as quantum communication, optical quantum information processing, and metrology. In the past year, great strides have been made in the characterization of single defects in wide-bandgap materials, such as silicon carbide and diamond, as well as single molecules, quantum dots, and carbon nanotubes. More recently, single-photon emitters in layered van der Waals materials attracted tremendous attention, because the two-dimensional(2 D)lattice allows for high photon extraction efficiency and easy integration into photonic circuits. In this review, we discuss recent advances in mastering single-photon emitters in 2 D materials, electrical generation pathways,detuning, and resonator coupling towards use as quantum light sources. Finally, we discuss the remaining challenges and the outlooks for layered material-based quantum photonic sources.     

三元系和四元系GaN基量子阱结构的显微结构

GaN基量子阱是光电子器件如发光二极管、激光二极管的核心结构。实验表明,采用InGaN/GaN三元和AlInGaN/GaN四元两种不同量子阱结构的激光二极管的发光性质和发光效率有明显差别,研究了这两种不同量子阱结构的显微特征。利用原子力显微镜表征了样品的(001)面;通过高分辨X射线衍射对两种量子阱结构的(002)面作ω/2θ扫描测得其卫星峰并分析了两种不同量子阱结构的界面质量;利用X射线衍射对InGaN/GaN和AlInGaN/GaN这两种量子阱的(002)、(101)、(102)、(103)、(104)、(105)和(201)面做ω扫描,进而得到其摇摆曲线。最后利用PL谱研究了它们的光学性能。通过这些显微结构的分析和研究,揭示了InGaN/GaN三元和AlInGaN/GaN四元两种不同量子阱结构宏观性质不同的结构因素。     

Out‐of‐Equilibrium Fluctuation‐Dissipation Relations Verified by the Electrical and Thermoelectrical AC‐Conductances in a Quantum Dot

The electrical and heat currents flowing through a quantum dot are calculated in the presence of a time‐modulated gate voltage with the help of the out‐of‐equilibrium Green function technique. From the first harmonics of the currents, we extract the electrical and thermoelectrical trans‐admittances and ac‐conductances. Next, by a careful comparison of the ac‐conductances with the finite‐frequency electrical and mixed electrical‐heat noises, we establish the fluctuation‐dissipation relations linking these quantities, which are thus generalized out‐of‐equilibrium for a quantum system. It is shown that the electrical ac‐conductance associated to the displacement current is directly linked to the electrical noise summed over reservoirs, whereas the relation between the thermoelectrical ac‐conductance and the mixed noise contains an additional term proportional to the energy step that the electrons must overcome when traveling through the junction. A numerical study reveals however that a fluctuation‐dissipation relation involving a single reservoir applies for both electrical and thermoelectrical ac‐conductances when the frequency dominates over the other characteristic energies.     

Circumventing the Manley-Rowe quantum efficiency limit in an optically pumped terahertz quantum-cascade amplifier

Using a microscopic theory based on the Maxwell-semiconductor Bloch equations, we investigate the feasibility of an optically pumped electrically driven terahertz (THz) quantum-cascade laser as a pathway to room-temperature THz generation. In optical conversion schemes the power conversion efficiency is limited by the Manley-Rowe relation. We circumvent this constraint by incorporating an electrical bias in a four level intersubband scheme, thereby allowing coherent recovery of the optical pump energy. The observed THz radiation is generated through both stimulated emission and automatically phase-matched quantum coherence contributions--making the proposed approach both a promising source for THz radiation and a model system for quantum coherence effects such as lasing without inversion and electromagnetically induced transparency.     

AFM diagnostics of graphene-based quantum Hall devices

In this paper we present the results of morphological, mechanical and electrical investigation of the properties of prepared graphene flakes and graphene-based quantum Hall devices. AFM imaging allowed us to identify the local imperfections and unintentional modifications of the graphene sheets which had caused severe deterioration of the device electrical performance. Utilizing the NanoSwing imaging method, based on the time-resolved tapping mode, we could observe non-homogeneities of the structural and mechanical properties. We also diagnosed the device under working conditions by Kelvin probe microscopy and detected its local electric field distribution.