用化学镀方法在不同衬底上制备纳米尺度金属插塞电极的研究

纳米尺度金属插塞电极在现代纳米电子学中有很重要的应用价值。本文研究了用化学镀方法制备纳米尺度金属插塞电极,具有简单、低成本和自选择性的优点。化学镀甚至可以分别在硅衬底、钨衬底和氮化钛衬底上制备出直径小于50纳米的镍插塞电极。用能量色散X射线微量分析仪（EDXM）测定出用化学镀在硅衬底上制备出的纳米尺度插塞电极的主要成分是镍。最后,采用化学镀方法,制备了直径为9微米的插塞电极的垂直结构相变存储器器件。通过研究器件的电流-电压特性表明,化学镀方法可以满足器件应用要求。因此,用简单、低成本的化学镀方法来制备纳米尺度金属插塞电极,对器件的应用有重要意义。     

激光辅助金属电沉积与无电沉积机理比较

本文介绍了激光增强金属电沉积与诱导金属无电沉积机理,比较了两种机理的区别与联系,简要说明了激光辅助金属沉积的特点和应用。     

化学沉积Ni—Cu—P合金镀层生长过程的原子力显微镜观察

用原子力显微镜（AFM）,对化学沉积Ni-Cu-P合金薄膜的表面形貌进行了观察,对多元化学沉积的机理进行了初步的研究。     

Catalyst-free growth of ZnO nanowires on various-oriented sapphire substrates by pulsed-laser deposition

Catalyst-free growth of one-dimensional zinc oxide (ZnO) nanowires is reported. ZnO nanowires were synthesized on ZnO buffer layers deposited on various-oriented sapphire substrates. Syntheses of ZnO buffer layers and nanowires were performed by ultraviolet pulsed-laser deposition. ZnO nanowire's number density was the lowest in the case of using m-cut sapphire substrates. ZnO nanowires grown on a-cut sapphire substrates had vertical alignment with distances of tens to hundreds of nanometers. On the other hand, ZnO nanowires grown on c-cut sapphire substrates had the biggest nucleation rate. The dependence of crystalline orientation of ZnO buffer layers on the orientation of sapphire substrates were investigated by electron back scatter diffraction measurement. From their results, the growth models of ZnO buffer layers were suggested and the variations in morphological properties of ZnO nanowires were discussed.     

氧化时间和温度对Si基AAO模板制备的影响

采用一次阳极氧化法,通过电解P型<100>晶向Si衬底上的高纯Al膜,在40V下,0.3M草酸中制备了Si基anodic aluminum oxide(AAO)模板。在Si基Al氧化过程中,通过电流密度随时间实时变化曲线的分析,研究了Si基AAO的生长机理。实验发现,电解液温度对Si基AAO制备的影响很大,在30℃下的氧化速度是在10℃下的5倍多。     

Formation of Pd catalyst by Nd:YAG laser irradiation for electroless copper deposition

In this study, we attempt to develop an improved approach for patterning a thin activator by decomposing palladium acetate/acetone layer on nonconductive PI substrates with the second harmonic Q-switched Nd:YAG laser, using acetone instead of toxic chloroform as solvent. In particular, we have established a simple method to identify the decomposition mechanism of palladium acetate.Our developed process can produce copper with high purity and low resistivity achieved by electroless copper deposition on this thin activator.     

基于阳极氧化铝模板的金属纳米孔阵列膜制备

以0.3 mol/L草酸为电解液,在40 V直流电压、0～5℃下采用二步阳极氧化法制备了纳米多孔阳极氧化铝模板。用射频磁控溅射法在阳极氧化铝模板表面制备了金属铝膜。SEM分析结果表明:金属膜复制了阳极氧化铝模板形貌,具有纳米孔有序阵列结构;金属膜的孔径受控于溅射功率和时间,功率30 W下沉积10 min约为68 nm,32 W下10 min约为58 nm,32 W下15 min约为25 nm。     

多孔氧化铝模板的制备及性质研究

多孔氧化铝由于具有规则的纳米多孔结构,是制备各种纳米材料的良好模板,因此,研究多孔氧化铝的制备和物理性质具有重要的意义.采用阳极氧化方法制备了多孔氧化铝有序孔洞阵列,通过场发射扫描电镜(SEM)和X射线衍射(XRD)观测了样品的表面、截面的形貌和晶态结构,分析了样品的透射光谱性质.结果表明,制备的多孔氧化铝模板的孔洞分布有序,孔径大小均匀,严格垂直底面;模板具有非晶态结构,在可见光和红外波长范围内具有较高的透射性能.     

Material and electrical properties of electroless Ag-W thin film

Thin Ag-W films were prepared on Si (100) substrate and on metal (Ag and Co) seed layers by electroless technology for ULSI applications. The thin film electrical and physical parameters were studied as a function of the film composition. The thin film composition depends on the electroless bath formula. The role of the tungsten in silver matrix was studied via measurements of the film microhardness and thermal stability as function of the composition. The Ag-W films, thicker than 200 nm, exhibited a specific electrical resistivity of about 2μΩ* and a reflectivity larger than 90%. These films have not corroded in air at temperatures up to 200°C (thermal stable). Therefore, we assume that silvertungsten films can be used for applications where reliable conducting thin films is required, such as packaging and interconnects for microelectronics.     

PCB高稳定性中速化学镀铜工艺研究

主要研究微量添加剂对化学镀铜镀液沉积速率及镀液稳定性的影响,通过试验筛选合适的微量添加剂,在不改变化学镀铜镀液主反应物质含量的情况下实现镀速提高和镀液稳定性增加。开发出的高稳定性中速化学镀铜工艺,其性能满足PCB工业化生产。     

阳极氧化铝(AAO)模板法制作的直径和长度一致的碳纳米管

我们在铝衬底上制作了不同参数条件下的阳极氧化铝(AAO)模板.通过改变初次阳极化时间来得到不同尺寸的纳米孔.改变初次阳极化时间可容易地调节,而使用刻蚀技术又可以控制氧化铝孔的长度.在该研究中,控制阳极极化和刻蚀参量成功地制备了不同直径和不同长度的AAO纳米孔.在AAO模板的竖直沟道中生长了方向性强的碳纳米管,而AAO纳米孔的直径和长度可以控制这一过程.通过二次阳极极化法制备了有着六边形孔洞排列方式的纳米AAO模板.由于AAO纳米孔的直径和长度依赖于阳极化参量,故通过控制阳极化参量就可控制AAO纳米孔的直径和长度.     

大面积非光刻纳米电极间隙的制备

A lithography-independent and wafer scale method to fabricate a metal nanogap structure is demonstrated. Polysilicon was first dry etched using photoresist （PR） as the etch mask patterned by photolithography. Then, by depositing conformal SiO2 on the polysilicon pattern, etching back SiO2 anisotropically in the perpendicular direction and removing the polysilicon with KOH, a sacrificial SiO2 spacer was obtained. Finally, after metal evaporation and lifting-off of the SiO2 spacer, an 82 nm metal-gap structure was achieved. The size of the nanogap is not determined by the photolithography, but by the thickness of the SiO2. The method reported in this paper is compatible with modern semiconductor technology and can be used in mass production.     

Lithography-independent and large scale fabrication of a metal electrode nanogap

ture was achieved. The size of the nanogap is not determined by the photolithography, but by the thickness of the SiO2. The method reported in this paper is compatible with modern semiconductor technology and can be used in mass production.     

High‐Performance Micro‐Solid Oxide Fuel Cells Fabricated on Nanoporous Anodic Aluminum Oxide Templates

Micro‐solid oxide fuel cells (μ‐SOFCs) are fabricated on nanoporous anodic aluminum oxide (AAO) templates with a cell structure composed of a 600‐nm‐thick AAO free‐standing membrane embedded on a Si substrate, sputter‐deposited Pt electrodes (cathode and anode) and an yttria‐stabilized zirconia (YSZ) electrolyte deposited by pulsed laser deposition (PLD). Initially, the open circuit voltages (OCVs) of the AAO‐supported μ‐SOFCs are in the range of 0.05 V to 0.78 V, which is much lower than the ideal value, depending on the average pore size of the AAO template and the thickness of the YSZ electrolyte. Transmission electron microscopy (TEM) analysis reveals the formation of pinholes in the electrolyte layer that originate from the porous nature of the underlying AAO membrane. In order to clog these pinholes, a 20‐nm thick Al₂O₃ layer is deposited by atomic layer deposition (ALD) on top of the 300‐nm thick YSZ layer and another 600‐nm thick YSZ layer is deposited after removing the top intermittent Al₂O₃ layer. Fuel cell devices fabricated in this way manifest OCVs of 1.02 V, and a maximum power density of 350 mW cm^?2 at 500 °C.     

制备工艺对多孔阳极氧化铝模板的影响

以草酸溶液为电解液,采用二次氧化法制备了AAO模板,利用自制的实验装置,制备出了高度有序的多孔AAO模板,利用扫描电子显微镜(SEM)对其形貌进行了表征。分析了阴阳极间距、制备电压以及草酸溶液浓度对制备AAO模板的影响。经对比讨论,得到了制备AAO模板的优化条件为电压40V,草酸浓度0.5mol/L,阴阳极间距3～5cm。制备的AAO模板的纳米孔径约为100nm,纳米孔径排列规则、笔直且互相平行。分析了多孔AAO模板的形成机理。     

Dye-sensitized solid-state photovoltaic cells: Suppression of electron-hole recombination by deposition of the dye on a thin insulating film in contact with a semiconductor

The heterojunction n-SnO₂/Ru-dye/p-CuI prepared by deposition of the ruthernium bipyridyl dye on a meso-porous film of SnO₂ followed by deposition of p-CuI was found to be inactive with respect to visible light photoresponse and dark current rectification. However, n-SnO₂/Al₂O₃/Ru-dye/p-CuI where the dye is coated on a thin film on Al₂O₃ first deposited on SnO₂, delivered a short-circuit current density of 1.7 mAcm⁻² and an open-circuit voltage of 350 mV, behaving as a dye-sensitized solid-state photovoltaic cell. This result is explained as a transfer of energetic electrons released by excitation of the dye molecules to the conduction band of SnO₂ via tunneling across the thin layer of Al₂O₃. The implications of the result on suppression of recombination in dye-sensitized photovoltaic cells are discussed.     

Influence of laser wavelength on activation of ZrO2 ceramics for electroless metal plating

Experimental results are presented on modifications of the surface properties of ZrO₂ ceramics exposed in air to radiation of either a KrF laser (λ=248 nm) or an ArF laser (λ=193 nm) with a pulse duration of 15–20 ns. The modifications of their diffuse reflectance spectra (DRS) are studied as a function of the laser beam parameters. The ablated parts of ZrO₂ take on the ability to reduce metals (Cu or Ni) from their respective electroless plating solutions. The electrolessly deposited metal can be patterned via local annealing of the ablated areas with the help of a CW laser, either Ar⁺ or CO₂. The catalytic activity of laser-treated ZrO₂ ceramics towards the electroless deposition of metals is discussed from the viewpoint of the formation of an oxygen-deficient surface under laser ablation. The possibility of ZrO₂ activation for electroless metal deposition using a scanning beam of a low-power CO₂ laser is demonstrated. © 1997 John Wiley & Sons, Ltd.     

ZnO nanotips grown on Si substrates by metal-organic chemical-vapor deposition

The ZnO nanotips are grown on silicon and silicon-on-sapphire (SOS) substrates using the metal-organic chemical-vapor deposition (MOCVD) technique. The ZnO nanotips are found to be single crystal and vertically aligned along the c-axis. In-situ Ga doping is carried out during the MOCVD growth. The ZnO nanotips display strong near-band edge photoluminescence (PL) emission with negligible deep-level emission. Free excitonic emission dominates the 77-K PL spectrum of the as-grown, undoped ZnO nanotips, indicating good optical properties and a low defect concentration of the nanotips. The increase of PL intensity from Ga doping is attributed to Ga-related impurity band emission. Photoluminescence quenching is also observed because of heavy Ga doping. ZnO nanotips grown on Si can be patterned through photolithography and etching processes, providing the potential for integrating ZnO nanotip arrays with Si devices.     

Controlled Fabrication of Hierarchically Structured Nitrogen‐Doped Carbon Nanotubes as a Highly Active Bifunctional Oxygen Electrocatalyst

Hierarchically structured nitrogen‐doped carbon nanotube (NCNT) composites, with copper (Cu) nanoparticles embedded uniformly within the nanotube walls and cobalt oxide (Co_xO_y) nanoparticles decorated on the nanotube surfaces, are fabricated via a combinational process. This process involves the growth of Cu embedded CNTs by low‐ and high‐temperature chemical vapor deposition, post‐treatment with ammonia for nitrogen doping of these CNTs, precipitation‐assisted separation of NCNTs from cobalt nitrate aqueous solution, and finally thermal annealing for Co_xO_y decoration. Theoretical calculations show that interaction of Cu nanoparticles with CNT walls can effectively decrease the work function of CNT surfaces and improve adsorption of hydroxyl ions onto the CNT surfaces. Thus, the activities of the oxygen reduction reaction (ORR) and the oxygen evolution reaction (OER) are significantly enhanced. Because of this benefit, further nitrogen doping, and synergistic coupling between Co_xO_y and NCNTs, Cu@NCNT/Co_xO_y composites exhibit ORR activity comparable to that of commercial Pt/C catalysts and high OER activity (outperforming that of IrO₂ catalysts). More importantly, the composites display superior long‐term stability for both ORR and OER. This simple but general synthesis protocol can be extended to design and synthesis of other metal/metal oxide systems for fabrication of high‐performance carbon‐based electrocatalysts with multifunctional catalytic activities.     

Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition

A comparison of gallium-nitride (GaN) films grown on large-area Si(111) using a single aluminum-nitride (AlN) buffer, an AlN/graded-Al_xGa_1−xN buffer, and the introduction of additional low-temperature (LT)-grown AlN interlayers is reported. A graded-AlGaN buffer followed by additional LT-AlN interlayers is shown to completely eliminate cracking in nitride films of thickness >2 μm and also reduce the threading-dislocation density significantly. A partial compensation of GaN-tensile strain by the compressive-lattice strain induced by the AlGaN and AlN layers is responsible for this effect. The surface roughness is increased by the introduction of the LT-AlN buffers.