A Hall coefficient investigation of ferromagnetic Ga1−xMnxAs layers on (100) GaAs substrates

Ferromagnetic Ga_1−xMn_xAs epilayers with Mn mole fraction in the range of x≈2.2-4.4% were grown on semi-insulating (100) GaAs substrates using the molecular beam epitaxy technique. The transport properties of these epilayers were investigated through Hall effect measurements. The measured hole concentration of Ga_1−xMn_xAs layers varied from 4.4×10¹⁹ to 3.4×10¹⁹ cm⁻³ in the range of x≈2.2-4.4% at room temperature. From temperature dependent resisitivity data, the sample with x≈4.4% shows typical behavior for insulator Ga_1−xMn_xAs and the samples with x≈2.2 and 3.7% show typical behavior for metallic Ga_1−xMn_xAs. The Hall coefficient for the samples with x≈2.2 and 4.4% was fitted assuming a magnetic susceptibility given by Curie-Weiss law in a paramagnetic region. This model provides good fits to the measured data up to and the Curie temperature T_c was estimated to be 65, 83 K and hole concentration p was estimated to be 5.1×10¹⁹, 4.6×10¹⁹ cm⁻³ for the samples with x≈2.2 and 4.4%, respectively, confirming the existence of an anomalous Hall effect for metallic and insulating samples.     

First principles investigation of optical properties of zinc-blende AlxGa1−xAs1−yNy materials

We have performed a first-principle Full Potential Linearized Augmented Plane Waves calculation within the local density approximation (LDA) to the zinc-blende Al_xGa_1−xAs_1−yN_y to predict its optical properties as a function of N and Al mole fractions. The accurate calculations of electronic properties such as band structures and optical properties like refractive index, reflectivity and absorption coefficient of Al_xGa_1−xAs and Al_xGa_1−xAs_1−yN_y with x≤0.375 and y up to 4% are presented. Al_xGa_1−xAs on GaAs have a lattice mismatch less than 0.16% and the lattice constant of Al_xGa_1−xAs has a derivation parameter of 0.0113±0.0024. The band gap energies are calculated by LDA and the band anticrossing model using a matrix element of C_MN=2.32 and a N level of E_N=(1.625+0.069x) eV. The results show that Al_xGa_1−xAs can be very useful as a barrier layer in separate confinement heterostructure lasers and indicate that the best choice of x and y Al_xGa_1−xAs_1−yN_y could be an alternative to Al_xGa_1−xAs when utilized as active layers in quantum well lasers and high-efficiency solar cell structures.     

Theoretical research on optical properties and quantum efficiency of Ga1−xAlxN photocathodes

In order to design the optimal component structure of transmission-mode (t-mode) Ga_1−xAl_xN photocathode, the optical properties and quantum efficiency of Ga_1−xAl_xN photocathodes are simulated. Based on thin film principle, optical model of t-mode Ga_1−xAl_xN photocathodes is built. And the quantum efficiency formula is put forward. Results show that Ga_1−xAl_xN photocathodes can satisfy the need of detectors with “solar blind” property when the Al component is bigger than 0.375. There is an optimal thickness of Ga_1−xAl_xN layer to get highest quantum efficiency, and the optimal thickness is 0.3 μm. There is close relation between absorptivity and quantum efficiency, which is in good agreement with the “three-step” model. This work gives a reference for the experimental research on the Ga_1−xAl_xN photocathodes.     

The structure and luminescence properties of long afterglow phosphor Y3−xMnxAl5−xSixO12

A series of phosphors with the composition Y_3−xMn_xAl_5−xSi_xO₁₂ (x=0, 0.025, 0.050, 0.075, 0.150, 0.225, 0.300) were prepared with solid state reactions. The X-ray powder diffraction analysis of samples shows that the substitution of Mn²⁺ and Si⁴⁺ does not change the garnet structure of phosphors, but makes the interplanar distance decrease to a certain extent. The emission spectra show that Mn²⁺ in Y₃Al₅O₁₂ emits yellow-orange light in a broad band. With the increment of substitution content, the emission intensity of the phosphors increases firstly then decreases subsequently, and the emission peak moves to longer wavelength. Afterglow spectra and decay curves show that all the Mn²⁺ and Si⁴⁺ co-doped samples emit yellow-orange light with long afterglow after the irradiation of ultraviolet light. The longest afterglow time is 18 min. Thermoluminescence measurement shows that there exist two kinds of traps with different depth of energy level and their depth decreases with the increment of substitution content.     

The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3

Treatment of GaN with SiH₄ and NH₃ increases the size of surface pits associated with threading dislocations, allowing them to be easily imaged by atomic force microscopy. Here, we assess the effect of a similar treatment on Al_xGa_1−xN surfaces for x ≤ 0.4. For relaxed Al_xGa_1−xN epilayers, an increase in the observed size and density of threading dislocation pits is observed. However, if the Al_xGa_1−xN is under tensile strain, the treatment results in the appearance of nanometre-scale surface hillocks. These hillocks may prevent observation of the dislocation pits. The hillocks are found to consist of crystalline Al_xGa_1−xN, and hence are suggested to be formed by strain driven etching or transformation of the surface by SiH₄ and NH₃.     

Photoluminescence investigation of ferromagnetic Ga1−xMnxN layers with GaN templates grown on sapphire (0 0 0 1) substrates

We have investigated the temperature and composition dependent photoluminescence (PL) spectra in Ga_1−xMn_xN layers (where x ≈ 0.1-0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. The efficient PL is peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. The band-gap energy of the Ga_1−xMn_xN layers decreased with increasing temperature and manganese composition. The band-gap energy of the Ga_1−xMn_xN layers was modeled by the Varshni equation and the parameters were determined to be α = 2.3 × 10⁻⁴, 2.7 × 10⁻⁴, 3.4 × 10⁻⁴ eV/K and β = 210, 210, and 230 K for the manganese composition x = 0.1%, 0.2%, and 0.8%, respectively. As the Mn concentration in the Ga_1−xMn_xN layers increased, the temperature dependence of the band-gap energy was clearly reduced.     

The structure and luminescence properties of a novel orange emitting phosphor Y3MnxAl5−2xSixO12

A series of phosphors with the composition Y₃Mn_xAl_5−2xSi_xO₁₂ (x=0, 0.05, 0.1, 0.15, 0.2, 0.3, 0.4, 0.5, 0.6) was prepared through solid state reactions. X-ray powder diffraction analysis of samples shows that when co-doping content does not exceed 16% of Al³⁺, equimolar co-doping of Mn²⁺ and Si⁴⁺ does not change the garnet structure of phosphors, but makes the interplanar distance to decrease a certain extent. However, if the co-doping content exceeds 16%, new phases will form in the samples. The excitation and emission spectra of samples show that Mn²⁺ in Y₃Mn_xAl_5−2xSi_xO₁₂ emits broadband orange light (peak wavelength varies from 586 to 593 nm). With an increment in co-doping content, the emission intensity of the phosphors increases when the value of x is lower than 0.1 while it decreases when it is higher than 0.1 and the emission peak moves to a longer wavelength.     

The influence of chemical treatment and thermal annealing on AlxGa1−xN surfaces: An XPS study

The influences of chemical treatment and thermal annealing of Al_xGa_1−xN (x = 0.20) have been investigated by X-ray photoelectron spectroscopy (XPS). XPS analysis showed that successive chemical treatments and annealing produced changes in the stoichiometry of the Al_xGa_1−xN surface, with the surface concentration of N increasing and Al and Ga decreasing with increasing temperature. Band bending occurred at the Al_xGa_1−xN surface, in parallel with the observed changes in stoichiometry. These results are discussed in the context of the creation of surface states via the activation of vacancies and induced by defects. These findings point towards the possibility of selecting and/or engineering the band structure at Al_xGa_1−xN surfaces through a combination of surface preparation and annealing.     

Magnetic properties of R2Fe17−xGax (R=Y and Gd) compounds

The magnetic properties of Y₂Fe_17−xGa_x for 3≤x≤7 and Gd₂Fe_17−xGa_x for 5≤x≤7 have been investigated using ⁵⁷Fe Mössbauer spectroscopy. These compounds have the rhombohedral Th₂Zn₁₇ structure. X-ray diffraction analysis of aligned powders shows that the easy direction of magnetization is parallel to the c-axis in Y₂Fe₁₀Ga₇ and Gd₂Fe₁₀Ga₇ and is perpendicular to the c-axis in Y₂Fe₁₄Ga₃, Y₂Fe₁₂Ga₅, Gd₂Fe₁₂Ga₅ and Gd₂Fe₁₁Ga₆. Mössbauer studies indicate that those samples are ordered ferromagnetically. The ⁵⁷Fe hyperfine field decreases with increasing Ga content. This decrease results from the decreased magnetic exchange interactions resulting from Ga substitution. The average isomer shift, δ, for R₂Fe_17−xGa_x (R=Y and Gd) at room temperature is positive and the magnitude of δ increases with increasing Ga content.     

EPR investigations of oxidation effects in (V1−xMox)2−δO3

Electron paramagnetic resonance (EPR) investigations has been carried out on the new family of molybdenum doped vanadium sesquioxides (V_1−xMo_x)_2−δO₃. The oxidation effects were monitored from the rate of paramagnetic V⁴⁺ created when the sample is exposed to the air. The effects of the oxidation time, sample temperature, and annealing at 1000 °C under a diluted hydrogen atmosphere on the EPR signal features are analyzed. The V⁴⁺ concentration in the oxidized samples is determined and the relaxation effects driven by the conduction electrons are pointed out from the thermal behaviour of the EPR line features. EPR spectra of all the oxidized samples also reveal a small ferromagnetic contribution strongly correlated with the V⁴⁺ content.     

Highly cation-deficient manganese perovskite, La1−xMn1−yO3 with x=y

Oxidative (δ>0) nonstoichiometry in the perovskite ‘LaMnO_3+δ’ has been known to be manifested not with O interstitials but rather with cation vacancies of equal amounts at the two cation sites, La and Mn, i.e. La_1−xMn_1−yO₃ with x=y. Here, we report the fabrication of samples with record-high cation-vacancy concentrations (x>0.12 or δ>0.4) by means of a variety of high-pressure oxygenation techniques. Linear (negative) dependence of the cell volume on x was observed within the whole x range investigated, down to 56.9 Å³ (per formula unit) for a sample oxygenated at 5 GPa and 1100 °C using Ag₂O₂ as an excess oxygen source. With increasing degree of cation deficiency in La_1−xMn_1−xO₃, the ferromagnetic transition temperature was found to follow a bell shape with respect to x exhibiting a maximum of ∼250 K about x≈0.1. For moderately oxygenated samples large magnetoresistance effect was evidenced.     

AlN, GaN, AlxGa1 − xN nanotubes and GaN/AlxGa1 − xN nanotube heterojunctions

Semiconductor optoelectronic devices based on GaN and on InGaN or AlGaN alloys and superlattices can operate in a wide range of wavelengths, from far infrared to near ultraviolet region. The efficiency of these devices could be enhanced by shrinking the size and increasing the density of the semiconductor components. Nanostructured materials are natural candidates to fulfill these requirements. Here we use the density functional theory to study the electronic and structural properties of (10,0) GaN, AlN, Al_xGa_1 − xN nanotubes and GaN/Al_xGa_1 − xN heterojunctions, 0<x<1. The Al_xGa_1 − xN nanotubes exhibit direct band gaps for the whole range of Al compositions, with band gaps varying from 3.45 to 4.85 eV, and a negative band gap bowing coefficient of −0.14 eV. The GaN/Al_xGa_1 − xN nanotube heterojunctions show a type-I band alignment, with the valence band offsets showing a non-linear dependence with the Al content in the nanotube alloy. The results show the possibility of engineering the band gaps and band offsets of these III-nitrides nanotubes by alloying on the cation sites.     

Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1−xN/AlN/GaN high electron mobility transistors with InGaN back barriers

The effects of the In-mole fraction (x) of an In_xGa_1−xN back barrier layer and the thicknesses of different layers in pseudomorphic Al_yGa_1−yN/AlN/GaN/In_xGa_1−xN/GaN heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear Schrödinger-Poisson equations. Strain relaxation limits were also calculated for the investigated Al_yGa_1−yN barrier layer and In_xGa_1−xN back barriers. From an experimental point of view, two different optimized structures are suggested, and the possible effects on carrier density and mobility are discussed.     

Experimental investigation of long-wavelength optical lattice vibrations in quaternary AlxInyGa1−x−yN alloys and comparison with results from the pseudo-unit cell model

Raman and Fourier transform infrared (FTIR) spectroscopies have been utilized to measure long-wavelength optical lattice vibrations of high-quality quaternary Al_xIn_yGa_1−x−yN thin films at room temperature. The Al_xIn_yGa_1−x−yN films were grown on c-plane (0 0 0 1) sapphire substrates with AlN as buffer layers using plasma assisted molecular beam epitaxy (PA-MBE) technique with aluminum (Al) mole fraction x ranging from 0.0 to 0.2 and constant indium (In) mole fraction y=0.1. Pseudo unit cell (PUC) model was applied to investigate the phonons frequency, mode number, static dielectric constant, and high frequency dielectric constant of the Al_xIn_yGa_1−x−yN mixed crystals. The theoretical results were compared with the experimental results obtained from the quaternary samples by using Raman and FTIR spectroscopies. The experimental results indicated that the Al_xIn_yGa_1−x−yN alloy had two-mode behavior, which includes A₁(LO), E₁(TO), and E₂(H). Thus, these results are in agreement with the theoretical results of PUC model, which also revealed a two-mode behavior for the quaternary nitride. We also obtained new values of E₁(TO) and E₂(H) for the quaternary nitride samples that have not yet been reported in the literature.     

Study on the electronic structure and optical properties of different Al constituent Ga1−xAlxAs

Using quantum mechanics GASTEP software package based on the first principle density function theory, the electronic structure and optical properties of Ga_1−xAl_xAs at different Al constituent are calculated. Result shows that with the increase of Al constituent, the band gap of Ga_1−xAl_xAs increases and varies from direct band gap to indirect band gap; the absorption band edge and the absorption peak move to high-energy side; the static reflectivity decreases. With the increasing of the incident photon energy, Ga_1−xAl_xAs shows metal reflective properties in certain energy range. With the increasing of Al constituent, static dielectric constant decreases and the intersection of dielectric function and the x-axis move towards high-energy side; the peak of energy loss function move to low-energy side and the peak value reduces.     

Principal energy band gaps of the quaternary alloy AlxGa1−xSbyAs1−y

The correlated function expansion (CFE) interpolation procedure was presented to efficiently estimate principal energy band gaps and lattice constants of the quaternary alloy Al_xGa_1−xSb_yAs_1−y over the entire composition variable space. The lattice matching conditions between x and y for the alloy Al_xGa_1−xSb_yAs_1−y substrated to InAs and GaSb were obtained by optimizing the alloy lattice constant to that of the substrates. The corresponding principal band gaps (E(Γ), E(L), and E(X)) were also calculated along the lattice matching condition on each substrate (InAs and GaSb).     

Magnetotransport, optical, and electronic subband properties in AlxGa1−xN/AlN/GaN heterostructures

The Shubnikov-de Haas (S-dH) results at 1.5 K for Al_xGa_1−xN/AlN/GaN heterostructures and the fast Fourier transformation data for the S-dH data indicated the occupation by a two-dimensional electron gas (2DEG) of one subband in the GaN active layer. Photoluminescence (PL) spectra showed a broad PL emission about 30 meV below the GaN exciton emission peak at 3.474 eV that could be attributed to recombination between the 2DEG occupying in the AlN/GaN heterointerface and photoexcited holes. A possible subband structure was calculated by a self-consistent method taking into account the spontaneous and piezoelectric polarizations, and one subband was occupied by 2DEG below the Fermi level, which was in reasonable agreement with the S-dH results. These results can help improve understanding of magnetotransport, optical, and electronic subband properties in Al_xGa_1−xAs/AlN/GaN heterostructures.     

Luminescence properties of LiPrxCe1−xP4O12

LiPr_1−xCe_xP₄O₁₂ (x=0, 0.002, 0.02; 0.1) powder samples were prepared using the melt solution technique. Luminescent parameters of LiPr_1−xCe_xP₄O₁₂ phosphors have been investigated under ultraviolet-vacuum ultraviolet (3-12 eV) synchrotron radiation and X-rays excitation at room and near liquid He temperatures. Excitation luminescence spectra of Ce³⁺ emission, luminescent spectra and decay curves from the lower excited state levels of the 4f¹5d¹ and 5d¹ electronic configuration of the Pr³⁺ and Ce³⁺, respectively, clearly indicate energy transfer from Pr³⁺ to Ce³⁺. Energy migration proceeds via the Pr-sublattice followed by nonradiation transfer from Pr³⁺ to Ce³⁺ ions.     

Electronic structures of zigzag AlN, GaN nanoribbons and AlxGa1−xN nanoribbon heterojunctions: First-principles study

The electronic and structural properties of zigzag aluminum nitride (AlN), gallium nitride (GaN) nanoribbons and Al_xGa_1−xN nanoribbon heterojunctions are investigated using the first-principles calculations. Both AlN and GaN ribbons are found to be semiconductor with an indirect band gap, which decreases monotonically with the increased ribbon width, and approaching to the gaps of their infinite two dimensional graphitic-like monolayer structures, respectively. Furthermore, the band gap of Al_xGa_1−xN nanoribbon heterojunctions is closely related to Al (and/or Ga) concentrations. The Al_xGa_1−xN nanoribbon of width n=8 shows a continuously band gap varying from about 2.2 eV-3.1 eV as x increases from 0 to 1. The large ranged tunable band gaps in such a quasi one dimension structure may open up new opportunities for these AlN/GaN based materials in future optoelectronic devices.     

Influence of Al2O3 additions on crystallization mechanism and conductivity of Li2O-Ge2O-P2O5 glass-ceramics

The crystallization mechanism and conductivity of lithium aluminum germanium phosphate [LAGP] glass-ceramics fabricated from Li_1+xAl_xGe_2−x(PO₄)₃ (x=0.0-0.7) glass system were investigated as a function of Al₂O₃ additions. A non-isothermal analysis was performed to study the crystallization behavior of LAGP glass-ceramics at various heating rates (5-25K min⁻¹) by the Kissinger equation and the Augis-Bennett equation, illustrating volume crystallization for the glass-ceramics. The crystal identification and microstructure in glass-ceramics containing various Al₂O₃ contents were analyzed by means of XRD and FESEM. The main phase of the glass-ceramics was found to be LiGe₂(PO₄)₃, with AlPO₄ as the impurity phase. Additionally the highest total ionic conductivity (5.8×10⁻⁴ S/cm) at room temperature was obtained when x=0.5 for Li_1+xAl_xGe_2−x(PO₄)₃ (x=0.0-0.7) glass-ceramics, suggesting that it was a promising electrolyte for practical application in all-solid-state lithium batteries.