On the response of LR-115 plastic track detector to 10 20 Ne-ion

The track etch rates of ₁₀ ²⁰ Ne-ion in cellulose nitrate (LR-115) have been measured for different temperatures and the activation energy is determined. The experimental results show that both the track etch rate and the normalized track etch rate depend on the energy loss as well as on etching temperature. The maximum etched track length of ₁₀ ²⁰ Ne-ion agrees with the theoretically computed range. The experimental results show that there is no sharp threshold, at least in CN(LR-115).     

Calibration of different plastic track detectors using accelerated heavy ions

Measurements of the dependence of track etch rate on the energy-loss of different ions have been presented. In this method, ₁₈ ⁴⁰ Ar, ₁₀ ²² Ne, ₈ ¹⁶ O and ₆ ¹² C-ions of different energies are used as energetic heavy ions for track formation in the detectors. The bulk etch rate and track etch rate are measured for different temperatures and hence the activation energies are determined. The variation ofV =V _t /V _b along the trajectory of the track has been shown for different temperatures. The maximum etched track length is compared with the theoretical range as well as with the range reported earlier. The experimental results indicate the absence of a well-defined threshold in the plastics studied.     

Response of triafol-TN plastic track detectors to238U-ions

Triafol-TN plastic detector foils have been irradiated with²³⁸U ions of energy 16.34 MeV/u and the tracks produced have been observed using the chemical etching technique. The bulk etch rate and track etch rate are determined under successive chemical etching. In our case, the validity of Arrhenius’s law is confirmed by the fact that the same value ofE _a obtained for these different concentrations, within experimental errors. The results show a linear correlation between the measured track etch rate along the track and the corresponding total energy loss rate and a threshold value of ～ 5.0 MeV/(mg/cm²) for track registration was obtained. The maximum etched track length of²³⁸U-ion in triafol-TN has been compared with the theoretically computed range.     

A comparative study of track registration response of makrofol-(KG, KL & N) polycarbonate to Ar ions

In the present work a comparative study of track registration response of ⁴⁰Ar ions in different types of Makrofol polycarbonates viz. Makrofol-KG, KL & N have been done. The etched track parameters viz. bulk etch rate, track etch rate, etch rate ratio, cone angle and etching efficiency were calculated. The variation of etching rates with temperature were found to be exponential and follow the Arrhenius equation. The values of activation energy for bulk and track etching were also calculated. Maximum etchable track length/range were also obtained and compared with the theoretical values obtained from computer program RANGE. From the results it is found that the polycarbonates having same chemical composition manufactured by different chemical processes have slightly different behavior.     

Track recording properties of soda glass detector for accelerated heavy ions

The etch pit diameters of soda glass detector samples exposed to ₅₄ ¹³² Xe-ions of different energies are measured for different etching times after etching the detector in a ‘new etchant’ free of the adverse effect of the etch product layer. The dependence of track diameter on the energy and on the energy loss, dE/dx of ₅₄ ¹³² Xe-ion in soda glass has been presented. The energy resolution of soda glass and the critical angle for etching of fission fragment tracks in glass detectors have also been determined. The maximum etched track length of ₅₄ ¹³² Xe-ion in soda glass has been compared with the theoretical range. The effects of different annealing conditions on bulk etch rate of glass detector and on diameters of ₅₄ ¹³² Xe-ion tracks have been presented. Experimental results show that there is a decrease in track etch rate, etching efficiency and etchable range of ₅₄ ¹³² Xe-ions with annealing. The annealing of oblique tracks shows that the vertical tracks are more stable than the oblique tracks.     

High Energy Charged Particle Registration in CR-39 Polycarbonated Detector

Track etch rate characteristics of CR-39 plastic detector exposed to ²⁸Si ions of 670 MeV energy have been investigated. Experimental results were obtained in terms of frequency distribution of the track diameter, track density and bulk etching rate. A dependence of the mean track diameter on energy was found. The application of the radiation effect of heavy ions on CR-39 in the field of radiation detection and dosimetry are discussed. Results indicated that it is possible to produce etchable tracks of ²⁸Si in this energy range in CR-39. We also report the etching characteristics of these tracks in the CR-39 detector.     

Track revelation and optical properties of pentaerythritol tetrakis (allyl carbonate) plastic for application as nuclear track detector: effects of gamma radiations

The etching conditions of an indigenously prepared thin film of pentaerythritol tetrakis(allyl carbonate) (PETAC) were standardised for the use as a nuclear track detector. The optimum etching times in 6?N NaOH at 70°C for the appearance of fission and alpha tracks recorded in this detector from a ²⁵²Cf solid source were found to be 30 min and 1.50?h, respectively. The experimentally determined values for the bulk and track-etch rates for this detector in 6?N NaOH at 70°C were found to be 1.7?±?0.1 and 88.4?±?10.7?µm/h, respectively. From these results, the important track etching properties such as the critical angle of etching, the sensitivity and the fission track registration efficiency were calculated and compared with the commercially available detectors. The activation energy value for bulk etching calculated by applying Arrhenius equation to the bulk etch rates of the detector determined at different etching temperatures was found to be 0.86?±?0.02?eV. This compares very well with the value of about 1.0?eV reported for most commonly used track detectors. The effects of gamma irradiation on this new detector in the dose range of 200–1000?kGy have also been studied using bulk etch rate technique. The activation energy values for bulk etching calculated from bulk etch rates measurements at different temperatures were found to decrease with the increase in gamma dose indicating scission of the detector due to gamma irradiation. The optical band gap of this detector was also determined using UV–visible spectrometry and the value was found to be 4.37?±?0.05?eV.     

Comparison of plasma chemistries for the dry etching of bulk single-crystal zinc-oxide and rf-sputtered indium-zinc-oxide films

The dry etching characteristics of bulk, single-crystal zinc-oxide (ZnO) and rf-sputtered indium-zinc-oxide (IZO) films have been investigated using an inductively coupled high-density plasma with different plasma chemistries. The introduction of interhalogens such as ICl, IBr, BI₃, and BBr₃ to the Ar plasma produced no enhancement of the ZnO and IZO etch rates with respect to physical sputtering in a pure argon atmosphere under the same experimental conditions. In these plasma chemistries, the etch rate of both materials increased with source power and ion energy, indicating that ion bombardment plays an important role in enhancing desorption of etch products. Except in Ar/CH₄/H₂ discharges, the ZnO etch rate was very similar to that of IZO, which indicates that zinc and indium atoms are driven by a similar plasma etching dynamic. CH₄/H₂-containing plasmas produced higher etch rates for IZO than for ZnO due to the preferential desorption of the group III etch products. Application of the CH₄/H₂/Ar plasma to the etching of deep features in bulk, single-crystal ZnO produced highly anisotropic profiles although some trenches were observed near the sidewalls.     

Response of Makrofol polycarbonate plastic track detector to 1.1 MeV/N 54 132 Xe-ion

Makrofol polycarbonate plastic track detectors have been exposed to ₅₄ ¹³² Xe -ions of energy 1.1 MeV/N from the cyclotron beam. The bulk etch rate and track etch rate are measured for different temperatures and the activation energies are calculated. The maximum etched track length is compared with the theoretically computed range. The critical energy loss is (dE/dx) _c =5 MeV cm² mg⁻¹ for this detector material.     

Tracks of 18·56 MeV/u 40Ar ions in Lexan polycarbonate detector

Latent damage tracks of energetic⁴⁰Ar ions (18·56 MeV/u) have been recorded in Lexan polycarbonate detector. Bulk and track-etch parameters are evaluated under successive chemical etching. Our results show a linear correlation between the measured track-etch rate along the track and the corresponding total energy-loss rate and predict a threshold value of 5·0 MeV mg⁻¹ cm² for track registration. Maximum etchable track lengths of⁴⁰Ar ions as a function of energies have also been measured and compared with three different sets of theoretical ranges.     

Calibration of CR-39 with atomic force microscope for the measurement of short range tracks from proton-induced target fragmentation reactions

We studied the track response of CR-39 plastic nuclear track detectors (PNTD) for low (<6 MeV/n) and high (>100 MeV/n) energy heavy ions using the atomic force microscope (AFM). CR-39 PNTD was exposed to several heavy ion beams of different energy at HIMAC (Heavy Ion Medical Accelerator in Chiba). For AFM measurement, the amount of bulk etch was controlled to be ∼2 μm in order to avoid etching away of short range tracks. The response data obtained by AFM for ∼2 μm bulk etch was in good agreement with data obtained by the conventional optical microscope analysis for larger bulk etch. The response data from low energy beams (stopping near the surface) was also consistent with the data from high energy beams (penetrating the detector) as a function of REL (restricted energy loss) with the δ-ray cut off energy of ω₀ = 200 eV. We experimentally verified that REL (ω₀ = 200 eV) gives a universal function for wide energy range in CR-39 PNTD. This work has been done as part of a basic study in the measurement of secondary short range tracks produced by target fragmentation reactions in proton cancer therapy fields.     

Dry etching of ITO by magnetic pole enhanced inductively coupled plasma for display and biosensing devices

The dry etching of indium tin oxide (ITO) layers deposited on glass substrates was investigated in a high density inductively coupled plasma (ICP) source. This innovative low pressure plasma source uses a magnetic core in order to concentrate the electromagnetic energy on the plasma and thus provides for higher plasma density and better uniformity. Different gas mixtures were tested containing mainly hydrogen, argon and methane. In Ar/H₂ mixtures and at constant bias voltage (−100 V), the etch rate shows a linear dependence with input power varying the same way as the ion density, which confirms the hypothesis that the etching process is mainly physical. In CH₄/H₂ mixtures, the etch rate goes through a maximum for 10% CH₄ indicating a participation of the radicals to the etching process. However, the etch rate remains quite low with this type of gas mixture (around 10 nm/min) because the etching mechanism appears to be competing with a deposition process. With CH₄/Ar mixtures, a similar feature appeared but the etch rate was much higher, reaching 130 nm/min at 10% of CH₄ in Ar. The increase in etch rate with the addition of a small quantity of methane indicates that the physical etching process is enhanced by a chemical mechanism. The etching process was monitored by optical emission spectroscopy that appeared to be a valuable tool for endpoint detection.     

Activation energy of etching for CR-39 as a function of linear energy transfer of the incident particles

In this work, we have studied the effect of the radiation damage caused by the incident particles on the activation energy of etching for CR-39 samples. The damage produced by the incident particle is expressed in terms of the linear energy transfer (LET). CR-39 samples from American Acrylic were irradiated to three different LET particles. These are N (LET₂₀₀ = 20 KeV/μm) as a light particle, Fe (LET₂₀₀ = 110 KeV/μm) as a medium particle and fission fragments (ff) from a ²⁵²Cf source as heavy particles. In general the bulk etch rate was calculated using the weight difference method and the track etch rate was determined using the track geometry at various temperatures (50–90 °C) and concentrations (4–9 N) of the NaOH etchant. The average activation energy F_b related to the bulk etch rate v_b was calculated from ln v_b vs. l/T. The average activation energy E_t related to the track etch rate v_t was estimated from ln v_t vs. l/T. It is shown that activation energy of etching is a constant value for CR-39 detector where E_t was found to be independent on the damage produced by the incident particle.     

Laser-assisted etching of gallium arsenide in chlorine at 308 nm

Xenon chloride (308 nm) excimer laser-assisted etching of GaAs (100) in Cl₂ was demonstrated and characterized with respect to laser and gas parameters. The etch rate increased linearly with laser fluence from thresholds in the range of 50 to 75 mJ/cm² to the highest fluence studied, 650 mJ/cm². For a laser fluence of 370 mJ/cm², the etch rate varied with Cl₂ pressure reaching a maximum at a Cl₂ pressure of about 2 Torr. The etch rate decreased monotonically with Ar buffer gas pressure because of redeposition of GaCl₃ products into the etched channel. The redeposited GaCl₃ affected the etch rate and the etch morphology. The etch rate and morphology also varied with laser repetition rate. The mobility of chlorine on the surface also plays an important role in the etching mechanism.     

Study of the etching characteristics of -mixed NaOH solution

In the present paper the effect of the presence of Na₂CO₃ on the etching characteristics of NaOH has been presented quantitatively. Six CR-39 detectors were etched at 50, 60 and in 6 M NaOH solutions containing 0%, 1%, 2%, 3%, 4% and 5% concentration of Na₂CO₃. Etching was performed in 22 steps of 5–10 min starting from 15 min up to 210 min. These detectors were previously exposed to ²⁵²Cf source. Lengths of 35 randomly selected fission fragment tracks were measured after each etching time interval. Similarly, diameters of 25 randomly selected fission fragments having 90 incidence angle were also measured as mentioned above. Track etch rate, bulk etch rate, etching efficiency and activation energies of both track as well as bulk etching have been determined.     

Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries

The dry etching characteristics of bulk single-crystal zinc-oxide (ZnO) and RF-sputtered indium-zinc-oxide (IZO) films have been investigated using an inductively coupled high-density plasma in Ar/IBr and Ar/BI₃. In both plasma chemistries, the etch rate of ZnO is very similar to that of IZO, which indicates that zinc and indium atoms are driven by a similar plasma etching dynamics. IBr and BI₃-based plasmas show no enhancement of the etch rate over pure physical sputtering under the same experimental conditions. The etched surface morphologies are smooth, independent of the discharge chemistry. From Auger electron spectroscopy, it is found that the near-surface stoichiometry is unchanged within experimental error, indicating a low degree of plasma-induced damage.     

Studies on the track formation mechanism of the heavy ions in CR-39

The bulk etch rate for two types of CR-39 detector was measured as a function of temperature and the activation energies of bulk etching was determined. Experimental values of track etch rate were derived directly from the function of the succesive measured track length vrs. etching time for ²⁰⁹Bi, ¹²⁹Xe and ²⁰Ne ions.

The maximum etchable length of 13 MeV/u ²⁰⁹Bi and 13.04 MeV/u ¹²⁹Xe ions have been measured at and below these energies. A comparison of the measured and calculated track length data is presented.     

High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.     

Dry etching characteristics of GaN for blue/green light-emitting diode fabrication

The etch rates, surface morphology and sidewall profiles of features formed in GaN/InGaN/AlGaN multiple quantum well light-emitting diodes by Cl₂-based dry etching are reported. The chlorine provides an enhancement in etch rate of over a factor of 40 relative to the physical etching provided by Ar and the etching is reactant-limited until chlorine gas flow rates of at least 50 standard cubic centimeters per minute. Mesa sidewall profile angle control is possible using a combination of Cl₂/Ar plasma chemistry and SiO₂ mask. N-face GaN is found to etch faster than Ga-face surfaces under the same conditions. Patterning of the sapphire substrate for improved light extraction is also possible using the same plasma chemistry.