Absolute cross sections of electron attachment to molecular clusters. Part II: Formation of (H2O) N? , (N2O) N? , and (N2) N?

Absolute cross sections σ⁻(E, N) of electron attachment to clusters (H₂O) _N , (N₂O) _N , and (N₂) _N for varying electron energy E and cluster size N are measured by using crossed electron and cluster beams in a vacuum. Continua of σ⁻(E) are found that correlate well with the functions of electron impact excitation of molecules’ internal degrees of freedom. The electron is attached through its solvation in a cluster. In the formation of (H₂O) _N ⁻ , (N₂O) _N ⁻ , and (N₂) _N ⁻ , the curves σ⁻(N) have a well-defined threshold because of a rise in the electron thermalization and solvation probability with N. For (H₂O)₉₀₀, (N₂O)₃₅₀, and (N₂)₂₆₀ clusters at E = 0.2 eV, the energy losses by the slow electron in the cluster are estimated as 3.0 × 10⁷, 2.7 × 10⁷, and 6.0 × 10⁵ eV/m, respectively. It is found that the growth of σ⁻ with N is the fastest for (H₂O) _N and (N₂) _N clusters at E → 0 as a result of polarization capture of the s-electron. Specifically, at E = 0.1 eV and N = 260, σ⁻ = 3.0 × 10⁻¹³ cm² for H₂O clusters, 8.0 × 10⁻¹⁴ cm² for N₂O clusters, and 1.4 × 10⁻¹⁵ cm² for N₂ clusters; at E = 11 eV, σ⁻ = 9.0 × 10⁻¹⁶ cm² for (H₂O)₂₀₀ clusters, 2.4 × 10⁻¹⁴ cm² for (N₂O)₃₅₀ clusters, and 5.0 × 10⁻¹⁷ cm² for (N₂)₂₆₀ clusters; finally, at E = 30 eV, σ⁻ = 3.6 × 10⁻¹⁷ cm² for (N₂O)₁₀ clusters and 3.0 × 10⁻¹⁷ cm² for (N₂)₁₂₅ clusters. Original Russian Text ? A.A. Vostrikov, D.Yu. Dubov, 2006, published in Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 76, No. 12, pp. 1–15.     

EPR of Fe3+ ion and symmetry of [AIF5·H2O]2? complex ion in (NH4)2AIF5·H2O single crystals

We used the spin-Hamiltonian method for the analysis of the electron paramagnetic resonance (EPR) spectrum of Fe³⁺ as a probe ion in (NH₄)₂AlF₅·H₂O single crystalline basic material. The theoretical expressions for the magnetic field (at which the fine structure transition lines appear) versus the angle between the magnetic field and the axis of symmetry of the magnetic complex are also given. These values were calculated by applying the perturbation theory to the second-order terms. From the experimental results (at 300 K and 9.21 GHz), the spin-Hamiltonian parameters were deduced:D=(668±10)·10⁻⁴ T,E=(−56±10)·10⁻⁴ T,a=(−54±10)·10⁻⁴ T,F=(30±10)·10⁻⁴ T. An isotropic superhyperfine structure was evidenced for the five fluorine ions. The obtained EPR data were used to determine the local symmetry of the Al³⁺ ion. A good agreement with X-ray diffraction measurements was found.     

Measurement of the proton structure function F 2 at low x and low Q 2 at HERA

We report on a measurement of the proton structure functionF ₂ in the range 3.5×10⁻⁵≤x≤4×10⁻³ and 1.5 GeV²≤Q ²≤15GeV² at theep collider HERA operating at a centre-of-mass energy of √s=300GeV. The rise ofF ₂ with decreasingx observed in the previous HERA measurements persists in this lowerx andQ ² range. TheQ ² evolution ofF ₂, even at the lowestQ ² andx measured, is consistent with perturbative QCD. supported by EU HCM contract ERB-CHRX-CT93-0376     

Hydrogen diffusion constants in stainless steel and Pd60Ag40 alloy, and permeability of diaphragms made of these metals

Hydrogen permeability through diaphragms made of 12X18H12T stainless steel and Pd₆₀Ag₄₀ alloy under electrolytic hydrogen saturation has been studied with an electrolytic cell with a vacuum chamber. Hydrogen diffusion constants D _H = 3.86 × 10⁻¹⁰ cm² s⁻¹ for stainless steel and D _H = 4.36 × 10⁻⁸ cm² s⁻¹ for Pd₆₀Ag₄₀ alloy have been determined at a temperature of 40°C using the Berrer relations.     

High resistance modulation by the electric field based on La0.9Sr0.1MnO3/SrTiO3/Si structure

A field-effect configuration based on La_0.9Sr_0.1MnO₃/SrTiO₃/Si structure is fabricated on Si substrate by laser molecular-beam epitaxy. The resistance modulation by electric field of the La_0.9Sr_0.1MnO₃/SrTiO₃/Si structure is investigated in detail. An evident resistance modulation effect is observed at 80 K. The channel resistance modulation by field effect reaches 1.4×10⁷% and 2.6×10⁶% when V _DS are −2 and −6.5 V, respectively. The ON/OFF ratio of approximately 4000 is obtained. The present results are worthy of further investigations for potential applications of resistance modulation by electrostatic field in the heterostructures consisting of perovskite oxides and Si. Supported by the National Natural Science Foundation of China (Grant No. 50672120) and the National Basic Research Program of China (Grant No. 2004CB619004)     

Giant dielectric relaxation in SrTiO3-SrMg1/3Nb2/3O3 and SrTiO3-SrSc1/2Ta1/2O3 solid solutions

Ceramic samples of (1−x)SrTiO₃-xSrMg_1/3Nb_2/3O₃ and (1−x)SrTiO₃-xSrSc_1/2Ta_1/2O₃ were prepared, and their dielectric properties were studied at x=0.005–0.15 and 0.01–0.1, respectively, at frequencies 10 Hz–1 MHz and at temperatures 4.2–350 K. A giant dielectric relaxation was observed in the temperature range 150–300 K, and not so strong but well-developed relaxation was found in the temperature range 20–90 K. The activation energy U and the relaxation time τ₀ were determined to be 0.21–0.3 eV and from 10⁻¹¹ to 10⁻¹² s for the high-temperature relaxation and 0.01–0.02 eV and 10⁻⁸–10⁻¹⁰ s for the low-temperature relaxation, respectively. The additional local charge compensation of the heterovalent impurities Mg²⁺ and Nb⁵⁺ (or Sc³⁺ and Ta⁵⁺) by free charge carriers or the host ion vacancies is suggested to be the underlying physical mechanism of the relaxation phenomena. On the basis of this mechanism, the Maxwell-Wagner model and the model of reorienting dipole centers Mg²⁺ (or Sc³⁺) associated with the oxygen vacancy are proposed to explain the high-temperature relaxation with some arguments in favor of the latter model. The polaron-like model with the Nb⁵⁺-Ti³⁺ center is suggested as the origin of the low-temperature relaxation. The reasons for the absence of ferroelectric phase transitions in the solid solutions under study are also discussed. From Fizika Tverdogo Tela, Vol. 44, No. 11, 2002, pp. 1948–1957. Original English Text Copyright ? 2002 by Lemanov, Sotnikov, Smirnova, Weihnacht. This article was submitted by the authors in English.     

Improved absolute frequency measurement of the 115In+ 5s2 1S0-5s5p3P0 narrowline transition: Progress towards an optical frequency standard

We report on an improved absolute frequency measurement of the 5s ^{2 1} S ₀0-5s5p ³ P ₀ narrowline clock transition at 236.5 nm, for a single, trapped, and laser-cooled ¹¹⁵In ion. Using a narrowline laser as the local oscillator, a linewidth of 43 Hz for the transition is resolved. The uncertainty of the transition frequency’s centroid is 18 Hz, leading to a fractional uncertainty of 1.4 × 10⁻¹⁴. For absolute frequency measurement, we use an optical frequency comb locked to a cesium clock as the reference. The transition frequency is found to be 1267402452900967(63) Hz, averaged over 13 days of separate measurements. The accuracy is about 5.0 × 10⁻¹⁴. We discuss possibilities for further improvement. Original Text ? Astro, Ltd., 2007.     

Integral energy spectrum of primary cosmic rays at high energies

The integral energy spectrum of primary cosmic rays has been obtained. In the energy range (2.4×10³−1.1×10⁵ GeV), the spectrum of all nuclei is consistent with a power law of indexγ=1.55±0.06 and the flux of all nuclei is:N(⩾E ₀)⋍(5.1±1.8)×10⁻¹×E ₀ ^−1.55 particles/cm² sterad. sec., whereE ₀ is in GeV. The spectrum of primaryα-particles in the energy range (4.4×10³−4.8×10⁴) GeV is also consistent with a power law of indexγ=1.71±0.12 and the flux is:N(⩾E ₀)=(4.2±1.4)×10⁻¹×E ₀ ^−1.71 , particles per cm² sterad. sec, whereE ₀ is in GeV.     

Measurement of the spin-exchange and chemical ionization rate constants in collisions of polarized metastable 23 S 1 helium atoms with 32 S 1/2 sodium atoms

Experimental data on the spin-exchange rate constants for the He(2³ S ₁)-Na(3² S _1/2) system are reported for the first time. Measurements show that the spin-exchange rate constant is C _se = (23 ± 11) × 10⁻¹⁰ cm³ s⁻¹ and the chemical ionization rate constant is C _si = (29 ± 14) × 10⁻¹⁰ cm³ s⁻¹ at a temperature of 420 K. The results are compared with the data calculated from the rate constants.     

Kinetic properties of p-Mg2SixSn1 ? x solid solutions for x < 0.4

The results of a study of Mg₂Si _x Sn_{1 − x} solid solutions (x = 0.25, 0.3, 0.35, 0.4) are reported. The measurements performed cover the Seebeck coefficient, electrical conductivity and the Hall coefficient over broad ranges of temperatures (80–700 K) and carrier concentrations (10¹⁸ to 6 × 10²⁰ cm⁻³). These measurements were used to derive the band structure parameters (band gap, hole mobility, hole effective mass). The effective mass of holes was found to grow strongly with an increase in their concentration.     

z-Scan characterization of zwitterionic chromophores for optoelectronic switching

Single beam z-scan measurements have been made on films containing amorphous polycarbonate and the zwitterionic chromophore, PYR-3, that has a very high second order nonlinear optical (NLO) figure of merit. The third order NLO figure of merit is ≈1.6 at 1030 nm and is comparable to that found in organic compounds optimized for high n ₂ values. The two-photon absorption coefficient is 2.1×10⁻¹² m/W, which is very low and advantageous for NLO device applications. The third order NLO refractive index is −1.4×10⁻¹⁸ m²/W.     

Optical properties of Tm,Mg:LiTaO3 laser crystal

A Tm, Mg co-doped LiTaO₃ crystal has been grown by Czochralski method. Room temperature polarized absorption spectra and fluorescence spectrum of the Tm, Mg:LiTaO₃ crystal were measured and analyzed. The maximum absorption cross-section is 6.0791 × 10⁻²⁰ cm² at around 790 nm with full width at half maximum of 5 nm. The emission cross-section of ³ F ₄ manifold was 2.2 × 10⁻²⁰ cm². The spectroscopic parameters of Tm³⁺ ion were calculated by applying the Judd-Ofelt approach, and the intensity parameters Ω₂, Ω₄, and Ω₆ were obtained to be 7.71 × 10⁻²⁰, 1.09 × 10⁻²⁰, and 1.16 × 10⁻²⁰ cm², respectively. The branching ratios and radiative lifetimes were also presented and the radiative lifetime of Tm^{3+ 3} F ₄ → ³ H ₆ transition is 968.3 μs. The results were also analyzed and compared with other Tm³⁺ doped hosts.     

Influence of Ar, Ne, Xe, and CCl4 impurities on luminescence kinetics of Cd II ions (5s22D5/2-5p2P3/2 transition, λ = 441.6 nm) in He-Cd mixture

The luminescence kinetics of the Cd II ion at a wavelength of 441.6 nm has been studied experi-mentally in a high-pressure He-Cd mixture in the presence of Ar, Ne, Xe, and CCl₄ impurities. Cadmium ions were excited through the bombardment of a cadmium foil heated up to 240°C by a pulsed electron beam with an electron energy of 150 keV, a pulse duration of 3 ns, and a current of 500 A. The constants of collisional quenching of the Cd II 5s ^{2 2} D _5/2 level by Ar, Ne, and Xe atoms and CCl₄ molecules and the integral luminescence quenching constants of this level in the helium medium by these impurity gases have been determined. The constants of collisional quenching appeared to be 8.1 × 10⁻¹² (Ar), 1.2 × 10⁻¹² (Xe), 1.5 × 10⁻¹³ (Ne), and 1.8 × 10⁻¹⁰ cm³/s (CCl₄, for λ = 325 nm), while the integral constants were found to be, respectively, 4.1 × 10⁻¹¹, 3.4 × 10⁻¹¹, 9.5 × 10⁻¹², 1.4 × 10⁻⁹ cm³/s for Ar, Ne, Xe, and CCl₄ at a buffer gas pressure of 1 atm. Original Russian Text ? A.I. Miskevich, Liu Tao, 2009, published in Optika i Spektroskopiya, 2009, Vol. 107, No. 1, pp. 45–49.     

Electron-hole liquid and excitonic molecules in quasi-two-dimensional SiGe layers of Si/SiGe/Si heterostructures

The electron-hole liquid (EHL) in SiGe layers of Si/Si_{1 − x} Ge _x /Si quantum-confinement heterostructures is discovered. It is composed of quasi-two-dimensional holes in the quantum well formed by the SiGe layer and quasi-three-dimensional electrons, which occupy a wider region of space centered on this layer. The densities of electrons and holes in the EHL are determined to be p ₀ ≈ 8.5 × 10¹¹ cm⁻² and n ₀ ≈ 4.8 × 10¹⁸ cm⁻³, respectively. It is demonstrated that the gas phase consists of excitons and excitonic molecules. The conditions on the band parameters of the structure under which the formation of the EHL of this kind and biexcitons is possible are formulated.     

Analysis of Bs→φ?+?? decay with new-physics effects

The rare B _s →φ ℓ ⁺ ℓ ⁻decay is investigated by using the most general model-independent effective Hamiltonian for ℓ=μ,τ. The calculated value of Br(B _s →φ μ ⁺ μ ⁻)=1.92×10⁻⁶ is consistent with the experimental upper bound. The dependencies of the branching ratios and polarization asymmetries of leptons and combined lepton–antilepton asymmetries on the new Wilson coefficients are presented. The analysis shows that the branching ratios and the lepton-polarization asymmetries are very sensitive to scalar- and tensor-type interactions. The results obtained in this work will be very useful in searching new physics beyond the standard model.     

Electroluminescent characteristics of InGaAsSb/GaAlAsSb heterostructure Mid-IR LEDs at high temperatures

The electroluminescent characteristics of an InGaAsSb/GaAlAsSb heterostructure LED emitting at 1.85 μm are studied in the temperature range 20–200°C. It is shown that the emission power exponentially drops as P ≅ 0.4exp(2.05 × 10³/T) with a rise in temperature primarily because of an increase in the Auger recombination rate. It is found that band-to-band radiative recombination goes in parallel with recombination through acceptor levels, the latter causing the emission spectrum to broaden. With a rise in temperature, the activation energy of the acceptor levels decreases by the law ΔE≅ 32.9 − 0.075T and the maximum of the LED’s emission spectrum shifts toward the long-wavelength range (hν _max = 0.693 − 4.497 × 10⁻⁴ T). Based on the dependence E _g = hν _max − 0.5kT and experimental data, an expression is derived for the temperature variation of the bandgap in the In_0.055Ga_0.945AsSb active area, E _g ≅ 0.817 − 4.951 × 10⁻⁴ T, in the range 290 K < T < 495 K. The resistance of the heterostructure decreases exponentially with rising temperature as R ₀ ≅ 5.52 × 10⁻²exp(0.672/2kT), while cutoff voltage U _cut characterizing the barrier height of a p−n junction decreases linearly with increasing temperature (U _cut = −1.59T + 534). It is found that the current through the heterostructure is due to the generation-recombination mechanism throughout the temperature interval.     

Study of Enhanced Chemiluminescence of Diperiodatocuprate (III) on 1,10-Phenanthroline/Hydrogen Peroxide/Cetyltrimethylammonium Bromide System

In the paper, a chemiluminescence (CL) system was developed based on the catalytical effect of diperiodatocuprate (III) (DPC) on the 1,10-phenanthroline (phen)/hydrogen peroxide (H₂O₂) in the presence of cetyltrimethylammonium bromide (CTAB). The effects of experimental conditions were investigated. Meanwhile the increase of CL intensity of the DPC/phen/H₂O₂/CTAB system is proportional to the concentration of phen in the range of low concentration. The linear range of the calibration curve is 5.0 × 10⁻⁹–1.0 × 10⁻⁶ mol L⁻¹, and the corresponding detection limit is 1.9 × 10⁻⁹ mol L⁻¹. The effects of phenolic compounds (PCs) on the system were investigated. Hydroquinone was used as an example to investigate the application of the CL system to the determination of PCs. The quenched CL intensity is linearly related to the logarithm of concentration of hydroquinone. The linear range of the calibration curve is 2.5 × 10⁻⁹–1.0 × 10⁻⁵ g mL⁻¹, and the corresponding detection limit is 1.8 × 10⁻⁹ g mL⁻¹. This phen and hydroquinone can be synchronously determined. The method was applied to the determination of hydroquinone in water samples and the recoveries were from 92% to 106%.     

Near IR laser light visualizators using nonlinear GaSe and other layered crystallites

Two methods of preparation of the devices for visualization of pulsed and continuous near-IR (near infrared) are described and the results of conversion of pulsed and continuous IR (800–1360 nm) laser radiation into the visible range of spectra (400–680 nm) by using a transparent substrate covered with the particles (including nanoparticles) of effective nonlinear materials of GaSe _x S_{1 − x} (0.2 ≤ x ≤ 0.8) are presented. Converted light can be detected in transmission or reflection geometry as a visible spot corresponding to the real size of the incident laser beam. Developed device structures can be used for checking if the laser is working or not, for optical adjustment, for visualization of distribution of laser radiation over the cross of the beam and for investigation of the content of the laser radiation. Low energy (power density) limit for visualization of the IR laser pulses with 2–3 ps duration for these device structures are: between 4.6–2.1 μJ (3 × 10⁻⁴−1 × 10⁻⁴ W/cm²) at 1200 nm; between 8.4–2.6 μJ (4.7 × 10⁻⁴−1.5 × 10⁻⁴ W/cm²) at 1300 nm; between 14.4–8.1 μJ (8.2 × 10⁻⁴–4.6 × 10⁻⁴ W/cm²) at 1360 nm. Threshold damage density is more than 10 MW/cm² at λ = 1060 nm, pulse duration τ = 35 ps. The results are compared with commercially existing laser light visualizators.     

Properties of Hg implanted Hg1? x Cd x Te infrared detectors

Experimental performance parameters of Hg implanted Hg_1−x Cd _x Te photovoltaic detectors are analyzed. At 77K, for 8–14 μm band, a comparison is made between performances and theoretical ultimate diffusion limits in low frequency direct detection. Experimental features are well-explained by a model based on the Auger band-to-band process for carrier recombination. Peak detectivities exceeding 10¹¹ cm Hz^1/2W⁻¹, external quantum efficiencies as high as 90%, and zero-bias resistance-area products better than 1 Ω·cm² have been achieved in devices with 12 μm cutoff wavelengths. In the 3–5 μm band performances are far from the diffusion limit. Notwithstanding, at 77K zero-bias resistance-area products are better than 10⁴Ω·cm² and detectivities of the order of 10¹² cm Hz^1/2W⁻¹ were observed at 5 μm. Predominant generation-recombination contribution are present at room temperature in 1–1.3 μm photodiodes whose detectivities, primarily limited by the Johnson noise, at 1.3 μm are higher than 10¹¹ cm Hz^1/2W⁻¹ at 300 K. The high frequency response of the photodiodes is also discussed. Response times as low as 0.5 ns are reached despite some limitations arising from the implanted layer sheet resistance. Work supported by CNR-CISE contract No. 73.01435.     

The radiative characteristics of the rovibronic states of the hydrogen molecule: IV. Relative probabilities of the r 3Π g ? , s 3Δ g ? → c 3Π u ± spontaneous transitions of the H2 molecule

A statistical analysis of the available literature data and data obtained in this work on the wave numbers of the lines that appear in triplet-triplet rovibronic transitions of the H₂ molecule was performed. This allowed us to verify and refine the controversial identification of spectral lines and find the optimum rovibronic level energy values for the c ³Π _u ^±, r ³Π _g ⁻, and s ³Δ _g ⁻ states. The ratios between the line strengths of the P, Q, and R branches of the (4dπ)r ³Π _g ⁻, (4dδ)s ³Δ _g ⁻ → (2pπ)c ³Π _u ^± band systems of the H₂ molecule were measured systematically. The calculation results obtained in the Frank-Condon approximation differed substantially (by up to two orders of magnitude) from the experimental data. The dependences of the ratios between rovibronic line strengths of the r ³Π _g ⁻ → c ³Π _u ^± and s ³Δ _g ⁻ → c ³Π _u ^± transitions on the rotational quantum number N′ of the upper level were found to correlate with each other. The deviations of adiabatic theory increase as N′ grows, which is evidence of an important role played by electronic-rotational interactions in the perturbation of transition probabilities. The experimental ratios between the probabilities of rovibronic transitions satisfactorily agree with the results of calculations within the framework of the simple nonadiabatic model taking into account electronic-rotational interaction of radiating adiabatic states in the approximation of pure precession. The dependences of transition probabilities on N′ were obtained for the first time for the first four diagonal bands of the r ³Π _g ⁻, s ³Δ _g ⁻ → c ³Π _u ^± transitions. Original Russian Text ? S.A. Astashkevich, B.P. Lavrov, A.V. Modin, I.S. Umrikhin, 2008, published in Khimicheskaya Fizika, 2008, Vol. 27, No. 2, pp. 22–38.