非对称方势垒量子隧穿研究及其数值模拟

为解决传统量子力学方法在研究非对称双势垒问题上计算过于繁琐的问题,利用转移矩阵的方法分别研究了电子对于非对称单势垒和非对称双势垒的量子隧穿特性,对两种情况分别得出了简洁的透射率公式.数值计算结果表明,在合适的参数下,单、双结结构都表现出良好的电导开关效应,且在入射电子能量大于势垒高度时,透射系数呈现显著的周期变化的量子...     

Traversal time for Dirac particles through a potential barrier

A traversal time that has no problem of superluminality was advanced for particles to tunnel through potential barriers in the non‐relativistic quantum theory in a previous paper by C.‐F. Li and Q. Wang, Physica B 296 (2001) 356. This time is generalized in this paper to Dirac's relativistic quantum theory. Both evanescent and propagating cases are considered. It is shown that the traversal time in the evanescent case has much the same properties as in the non‐relativistic quantum theory and thus has no problem of superluminality. It also gets rid of the problem of superluminality in the propagating case. Comparisons with the dwell time, the group delay, and the velocity of monochromatic front are also made.     

双模压缩真空态和纠缠相干态的一维势垒散射

分析了双模压缩真空态和纠缠相干态的一维势垒散射问题,结果表明,两种散射态的纠缠度都随势垒的透射系数呈类抛物线关系,且抛物线谷底对应半反半透势垒.前者的纠缠度还随入射压缩因子呈类抛物线关系,后者随入射纠缠呈线性关系.两种散射的保真度都可以由透射系数的增加而得到提高,但前者还会随入射压缩因子的增大而降低,后者随入射相干态模的增加而降低.     

Resonance-like tunneling across a barrier with adjacent wells

We examine the behavior of transmission coefficient T across the rectangular barrier when attractive potential well is present on one or both sides and also the same is studied for a smoother barrier with smooth adjacent wells having Woods-Saxon shape. We find that presence of well with suitable width and depth can substantially alter T at energies below the barrier height leading to resonant-like structures. In a sense, this work is complementary to the resonant tunneling of particles across two rectangular barriers, which is being studied in detail in recent years with possible applications in mind. We interpret our results as due to resonant-like positive energy states generated by the adjacent wells. We describe in detail the possible potential application of these results in electronic devices using n-type oxygen-doped gallium arsenide and silicon dioxide. It is envisaged that these results will have applications in the design of tunneling devices.     

Electron tunnelling phase time and dwell time through an associated delta potential barrier

The electron tunnelling phase time τP and dwell time τD through an associated delta potential barrier U(x) = ξδ(x) are calculated and both are in the order of 10^-17～10^-16s. The results show that the dependence of the phase time on the delta barrier parameter ξ can be described by the characteristic length lc = h^2/meξ and the characteristic energy Ec=meξ^2/h^2 of the delta barrier, where me is the electron mass, lc and Ec are assumed to be the effective width and height of the delta barrier with lcEc=ξ, respectively. It is found that TD reaches its maximum and τD = τp as the energy of the tunnelling electron is equal to Ec/2, i.e. as lc =λDB, λDB is de Broglie wave length of the electron.     

A light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well

We will present the observation of a light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the meta-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region.     

线度和势垒宽度对球状纳米系统电子散射截面的影响

在有效质量近似和球形方形势模型下,计算了开放型球状纳米系统电子散射截面及电子按能量的概率分布,探讨了线度、势垒宽度对电子散射截面和共振能量以及共振宽度的影响.结果表明:电子的散射截面随能量的分布曲线有一极大值和极小值,而且电子能量的概率分布曲线的极大值位置总是介于散射截面分布曲线的极大值与极小值的能量位置之间;散射截面随内核半径r₀的增大而增大,而且散射截面分布曲线随r₀的增大由较平滑变得较尖锐;散射截面随势垒宽度Δ的增大而增大,但在Δ＝1.4a_CdS–1.7a_CdS的范围内,变化出现异常,在Δ=1.6a_CdS时散射截面出现极小;电子共振能量E_l 随Δ的变化与电子所处状态有关,而电子共振宽度Γ_l随Δ的增大而减小;不论Δ取何值, E_l和Γ_l都满足能量和时间的测不准关系. 关键词： 球状纳米系统 势垒宽度 电子散射截面 电子概率分布     

Algebraic expressions for effective potential characteristic parameters in heavy ion scattering

In this paper, we obtain reliable expressions to calculate the barrier and pocket positions of the real part of the effective phenomenological optical potential having Woods-Saxon form factor, for different partial waves. The comparison of the results obtained from these formulae, when compared with the numerical results obtained using Newton-Raphson iterative procedure are found to be quite accurate, with error less than 1%. We also obtain algebraic expressions for estimatingl _poc, the angular momentum at which the potential pocket vanishes, the accuracy of which is tested with the exact calculations, using self-consistent iterative procedures. These and other expressions deduced in this paper provide simple and useful methods for calculating critical parameters of heavy ion effective potentials like barrier and pocket positions, curvatures at the barrier and pocket positions,l _poc and the grazing angular momentuml _g to carry out the analysis of heavy ion scattering.     

一维势垒散射中粒子的概率分布

利用数值计算方法研究了E>U0、0相似文献   

一维Hulthén势场中Klein-Gordon粒子的透射共振

用Heaviside函数构造出一维对称的Hulthén势垒,求解了其满足的Klein-Gordon方程. 散射态的精确解可以由超几何函数表示, 透射系数T和反射系数R能由Klein-Gordon 方程满足的边界条件得到.并由流密度守恒推导出低动量粒子发生透射共振的条件. 关键词： Klein-Gordon方程 Hulthén势垒 散射态 透射共振     

Dynamics of two quantum entangled particles interacting with a potential barrier in an EPR experiment

The effect of a position measurement on one component of a two-particle wave packet in a regularized space-momentum entangled state is analyzed. The wave packet interacts in the physical space with a potential barrier. When a position or momentum measurement is performed on one particle, a consequent strong modification of the dynamics of the other particle occurs.     

Resonant tunneling properties of inverted Morse double quantum barrier

We study resonant tunneling characteristics of inverted Morse double quantum barrier structures. The effect of electric bias and structure parameters is calculated by using non-equilibrium Green's function method. Results for the transmission coefficients are compared with the structure parameters. Our results show that the widths of the wells and heights of barriers have a significant effect on the transmission properties. We found that the resonant peak of the transmission coefficient decreases with increasing electric field bias. Moreover, resonant energy level increases with increasing barrier height and increasing width parameters.     

Path integral approach to electron scattering in classical electromagnetic potential

As is known to all, the electron scattering in classical electromagnetic potential is one of the most widespread applications of quantum theory. Nevertheless, many discussions about electron scattering are based upon single-particle Schrodinger equation or Dirac equation in quantum mechanics rather than the method of quantum field theory. In this paper, by using the path integral approach of quantum field theory, we perturbatively evaluate the scattering amplitude up to the second order for the electron scattering by the classical electromagnetic potential. The results we derive are convenient to apply to all sorts of potential forms. Furthermore, by means of the obtained results, we give explicit calculations for the one-dimensional electric potential.     

Bifurcation of a periodic instanton and quantum－classical transition in the biaxial nano－ferromagnet with a magnetic field along hard axis

Crossover from classical to quantum regimes of the barrier transition rate in a biaxial ferromagnetic magnet with a magnetic field applied along hard anisotropy axis is investigated. We show that the type of action-temperature diagrams can he determined by counting the number of bifurcation points. The model possesses not only the known type I and Ⅱ, hut also the interesting type Ⅲ and Ⅳ of transition which do not occur in general.     

Effect of negative electric field on spin-dependent tunneling in double barrier semiconductor heterostructures

The effect of negative electric field on spin-dependent tunneling in double barrier heterostructures of III–V semiconductor is theoretically investigated. The transfer matrix approach is used by considering Dresselhaus and induced-Rashba effect to calculate the barrier transparency and polarization efficiency. Cent percent polarization efficiency can be achieved for the negative electric field by increasing the width of the potential barrier. The separation between spin-up and spin-down resonances are evaluated. The separation between spin resonances and tunneling lifetime of electrons are observed for various negative electric fields as well as for various barrier widths. The linear variation of spin separation and tunneling lifetime of electrons are observed as a function of negative electric field.     

Improving the performance of a far-infrared quantum-ring-based photodetector utilizing asymmetric multi-barrier resonant tunneling

In this paper, a novel structure for quantum ring inter-subband photodetectors (QRIP) is proposed to reduce its dark current. Some additional layers including asymmetric multi-barrier resonant tunneling (AMBRT) in absorption region layers are exploited to provide near unity tunneling probability for generated photocurrents and completely reject thermally generated electrons. AMBRT structure consists of three asymmetric AlGaAs barriers and two InGaAs wells which are designed for operation wavelength of generated photocurrents by absorption of 20 μm. Simulation results show that AMBRT can considerably reduce the dark current compared to previously proposed resonant tunneling structure about three orders of magnitude. As a consequent, higher specific detectivity for AMBRT-QRIP is obtained in the order of ∼10¹¹ cm Hz^1/2/W at 100 K.     

Electronic transport for armchair graphene nanoribbons with a potential barrier

This paper studies the electronic transport property through a square potential barrier in armchair-edge graphene nanoribbon (AGNR). Using the Dirac equation with the continuity condition for wave functions at the interfaces between regions with and without a barrier, we calculate the mode-dependent transmission probability for both semiconducting and metallic AGNRs, respectively. It is shown that, by some numerical examples, the transmission probability is generally an oscillating function of the height and range of the barrier for both types of AGNRs. The main difference between the two types of systems is that the magnitude of oscillation for the semiconducting AGNR is larger than that for the metallic one. This fact implies that the electronic transport property for AGNRs depends sensitively on their widths and edge details due to the Dirac nature of fermions in the system.     

Electronic transmission and dwell time on a double barrier system with an accelerating quantum well

Resonant tunneling quantum structures consist of asymmetric wells and barriers have been investigated to find their optimized geometrical parameters and potential profile by the numerical calculations. The results show that the widths and the depths of the asymmetric wells have a significant effect on the transmission coefficient and the dwell time. The properties exhibited in this work may establish guidance to the device applications.     

电子双势垒量子隧穿的散射矩阵方法及其数值模拟

采用散射矩阵的方法研究了电子在由两个方势垒组成的双势垒结构中的隧穿特性.将电子在双势垒中的隧穿过程分为相干输运和非相干输运两部分来研究,相干输运导致了隧穿透射系数随中间层厚度变化产生量子振荡,而非相干输运导致了振荡振幅的衰减.双势垒总的透射系数与势垒高度、入射和出射波矢的匹配性有关,数值计算的结果证实了相关结论.     

电子-空穴对在势垒隧穿中的纠缠特性分析

分析电子隧穿简单势垒所产生的电子-空穴对的纠缠特性.基于能级配置的差异,协力纠缠度(concurrence)随势垒高度变化呈规律性的变化特征.