A QCD motivated model for soft interactions at high energies

In this paper we develop an approach to soft scattering processes at high energies which is based on two elements: the Good–Walker mechanism for low mass diffraction and multi-pomeron interactions for high mass diffraction. The principal idea, which allows us to specify the theory for pomeron interactions, is that the so called soft processes occur at rather short distances (r ² ∝1/〈p _t 〉² ∝ α′_ℙ≈0.01 GeV⁻²), where perturbative QCD is valid. The value of the pomeron slope α′_ℙ is obtained from a fit to the experimental data. Using this theoretical approach, we suggest a model that fits all soft data in the ISR-Tevatron energy range: total, elastic, single and double diffractive cross sections, as well as the t dependence of the differential elastic cross section, and the mass dependence of single diffraction. In this model we calculate the survival probability of diffractive Higgs production, and we obtain a value for this observable that is smaller than 1% at the LHC energy range.     

Weak chaos and metastability in a symplectic system of many long-range-coupled standard maps

We introduce, and numerically study, a system of N symplectically and globally coupled standard maps localized in a d=1 lattice array. The global coupling is modulated through a factor r^-α, being r the distance between maps. Thus, interactions are long-range (nonintegrable) when 0≤α≤1, and short-range (integrable) when α>1. We verify that the largest Lyapunov exponent λ_M scales as λ_M ∝ N^-κ(α), where κ(α) is positive when interactions are long-range, yielding weak chaos in the thermodynamic limit N↦∞ (hence λ_M→0). In the short-range case, κ(α) appears to vanish, and the behaviour corresponds to strong chaos. We show that, for certain values of the control parameters of the system, long-lasting metastable states can be present. Their duration t_c scales as t_c ∝N^β(α), where β(α) appears to be numerically in agreement with the following behavior: β>0 for 0 ≤α< 1, and zero for α≥1. These results are consistent with features typically found in nonextensive statistical mechanics. Moreover, they exhibit strong similarity between the present discrete-time system, and the α-XY Hamiltonian ferromagnetic model.     

Transport through a double barrier in Large Radius Carbon Nanotubes with a transverse magnetic field

We discuss the Luttinger Liquid behaviour of Large Radius Carbon Nanotube e.g. the Multi Wall ones (MWNT), under the action of a transverse magnetic field B. Our results imply a reduction with B in the value of the bulk critical exponent, α_bulk, for the tunneling density of states, which is in agreement with that observed in transport experiments. Then, the problem of transport through a Quantum Dot formed by two intramolecular tunneling barriers along the MWNT, weakly coupled to Tomonaga-Luttinger liquids is studied, including the action of a strong transverse magnetic field B. We predict the presence of some peaks in the conductance G versus B, related to the magnetic flux quantization in the ballistic regime, at a very low temperature T, and also at higher values of T, where the Luttinger behaviour dominates. The temperature dependence of the maximum G_max of the conductance peak according to the Sequential Tunneling follows a power law, G ∝T^γe-1 with γ_e linearly dependent on the critical exponent, α_end, strongly reduced by B.     

Transport through a double barrier for interacting quasi one-dimensional electrons in a quantum wire in the presence of a transverse magnetic field

We discuss the Luttinger liquid behaviour of a semiconducting quantum wire. We show that the measured value of the bulk critical exponent, α_bulk, for the tunneling density of states can be easily calculated. Then, the problem of the transport through a quantum dot formed by two quantum point contacts along the quantum wire, weakly coupled to spinless Tomonaga-Luttinger liquids is studied, including the action of a strong transverse magnetic field B. The known magnetic dependent peaks of the conductance, G(B), in the ballistic regime at a very low temperature, T, have to be reflected also in the transport at higher T and in different regimes. The temperature dependence of the maximum G_max of the conductance peak, according to the Correlated Sequential Tunneling theory, yields the power law G_max∝T^{2α end-1}, with the critical exponent, α_end, strongly reduced by B. This behaviour suggests the use of a similar device as a magnetic field modulated transistor.     

Two-particle dispersion in model two-dimensional velocity fields

We consider two-particle dispersion in a velocity field, where the relative two-point velocity scales according to v ²(r) ∝r ^α and the corresponding correlation time scales as τ(r) ∝r ^β, and fix α = 2/3, as typical for turbulent flows. We show that two generic types of dispersion behavior arize: For α/2 + β < 1 the correlations in relative velocities decouple and the diffusion approximation holds. In the opposite case, α/2 + β > 1, the relative motion is strongly correlated. The case of Kolmogorov flows corresponds to a marginal, nongeneric situation. In this case, depending on the particular parameters of the flow, the dispersion behavior can be rather diffusive or rather ballistic. Received 13 March 2001     

Triplet pairing states with equal spins in ferromagnet/superconductor heterojunctions for noncollinear magnetizations

Four-component Bogoliubov-de Gennes equations are applied to study tunneling conductance spectra of ferromagnet/ferromagnet/d-wave superconductor (F₁/F₂/d-wave S) tunnel junctions and to find out signs of spin-triplet pairing correlations induced in the proximity structure. The pairing correlations with equal spins arises from the novel Andreev reflection (AR), which requires at least three factors: the usual AR at the F₂/S interface, spin flip in the F₂ layer, and superconducting coherence kept up in the F₂ layer. Effects of angle α between magnetizations of the two F layers, polarizations of the F₁ and F₂ layers, the thickness of the F₂ layer, and the orientation of the d-wave S crystal on the tunneling conductance are investigated. A conversion from a zero-bias conductance dip at α = 0 to a zero-bias conductance peak at a certain value of α can be seen as a sign of generated spin-triplet correlations.     

Table-top kHz hard X-ray source with ultrashort pulse duration for time-resolved X-ray diffraction

The interaction of ultrashort laser pulses with solid state targets is studied concerning the production of short X-ray pulses with photon energies up to about 10 keV. The influence of various parameters such as pulse energy, repetition rate of the laser system, focusing conditions, the application of prepulses, and the chirp of the laser pulses on the efficiency of this highly nonlinear process is examined. In order to increase the X-ray flux, the laser pulse energy is increased by a 2nd multipass amplifier from 750 μJ to 5 mJ. By applying up to 4 mJ of the pulse energy a X-ray flux of 4×10¹⁰ Fe K _α photons/s or 2.75×10¹⁰ Cu K _α photons/s are generated. The energy conversion efficiency is therefore calculated to η _Fe≈1.4×10⁻⁵ and η _Cu≈1.0×10⁻⁵. The X-ray source size is determined to 15×25 μm². By focusing the produced X-rays using a toroidally bent crystal a quasi-monochromatic X-ray point source with a diameter of 56 μm×70μm is produced containing ≈10⁴ Fe K _α1 photons/s which permits the investigation of lattice dynamics on a picosecond or even sub-picosecond time scale. The lattice movement of a GaAs(111) crystal is shown as a typical application.     

N-doping of pentacene by decamethylcobaltocene

We demonstrate n-type doping of pentacene with the powerful reducing molecule decamethylcobaltocene (CoCp₂^*). Characterization of pentacene films deposited in a background pressure of CoCp₂^* by X-ray photoemission spectroscopy and Rutherford backscattering confirm that the concentration of incorporated donor molecules can be controlled to a level as high as 1%. Ultraviolet photoemission spectroscopy show Fermi level (E _F) shifts toward unoccupied pentacene states, indicative of an increase in the electron concentration. A 1% donor incorporation level brings E _F to 0.6 eV below the pentacene lowest unoccupied molecular orbital. The corresponding electron density of ∼10¹⁸ cm⁻³ is confirmed by capacitance–voltage measurements on a metal–pentacene–oxide–silicon structure. The demonstration of n-doping suggests applications of CoCp₂^* to pentacene contacts or channel regions of pentacene OTFTs.     

Non-perturbative contribution to the thrust distribution in <Emphasis Type="Italic">e</Emphasis><Superscript>+</Superscript><Emphasis Type="Italic">e</Emphasis><Superscript>−</Superscript> annihilation

We re-evaluate the non-perturbative contribution to the thrust distribution in e ⁺ e ⁻→ hadrons, in the light of the latest experimental data and the recent NNLO perturbative calculation of this quantity. By extending the calculation to NNLO+NLL accuracy, we perform the most detailed study to date of the effects of non-perturbative physics on this observable. In particular, we investigate how well a model based on a low-scale QCD effective coupling can account for such effects. We find that the difference between the improved perturbative distribution and the experimental data is consistent with a 1/Q-dependent non-perturbative shift in the distribution, as predicted by the effective coupling model. Best fit values of α _s (91.2 GeV)=0.1164_−0.0026^+0.0028 and α ₀(2 GeV)=0.59±0.03 are obtained with χ ²/d.o.f.=1.09. This is consistent with NLO+NLL results but the quality of fit is improved. The agreement in α ₀ is non-trivial because a part of the 1/Q-dependent contribution (the infrared renormalon) is included in the NNLO perturbative correction. Address after 1 October 2008: Rudolf Peierls Centre for Theoretical Physics, 1 Keble Road, Oxford OX1 3NP, UK.     

K<Subscript><Emphasis Type="Italic">α</Emphasis></Subscript> x-ray emission characterization of 100 Hz, 15 mJ femtosecond laser system with high contrast ratio

We report K _α x-ray production with a high energy (110 mJ per pulse at 800 nm before compression/15 mJ at 400 nm after compression), high repetition rate (100 Hz), and high pulse contrast (better than 10⁻⁹ at 400 nm) laser system. To develop laser-based x-ray sources for biomedical imaging requires to use high-energy and high-power ultrafast laser system where compression is achieved under vacuum. Using this type of laser system, we demonstrate long-term stability of the x-ray yield, conversion efficiency higher than 1.5×10⁻⁵ with a Mo target, and the x-ray spot size close to the optical focal spot. This high-repetition K _α x-ray source can be very useful for x-ray phase-contrast imaging. S. Fourmaux and C. Serbanescu contributed equally to this work.     

Zero bias anomaly in the density of states of low-dimensional metals

We consider the effect of Coulomb interactions on the average density of states (DOS) of disordered low-dimensional metals for temperatures T and frequencies ω smaller than the inverse elastic life-time 1/τ. Using the fact that long-range Coulomb interactions in two dimensions (2d) generate ln²-singularities in the DOS ν(ω) but only ln-singularities in the conductivity σ(ω), we can re-sum the most singular contributions to the average DOS via a simple gauge-transformation. If σ(ω) > 0, then a metallic Coulomb gapν(ω) ∝ |ω|/e ⁴ appears in the DOS at T = 0 for frequencies below a certain crossover frequency Ω ₂ which depends on the value of the DC conductivity σ(0). Here, - e is the charge of the electron. Naively adopting the same procedure to calculate the DOS in quasi 1d metals, we find ν(ω) ∝ (|ω|/Ω ₁)^1/2exp(- Ω ₁/|ω|) at T = 0, where Ω ₁ is some interaction-dependent frequency scale. However, we argue that in quasi 1d the above gauge-transformation method is on less firm grounds than in 2d. We also discuss the behavior of the DOS at finite temperatures and give numerical results for the expected tunneling conductance that can be compared with experiments. Received 28 August 2001 / Received in final form 28 January 2002 Published online 9 July 2002     

Extended modes and energy dynamics in two-dimensional lattices with correlated disorder

We study the nature of the vibrational modes in a two-dimensional harmonic lattice with long-range correlated random masses, with power-law spectral density S(k)∼1/k^α. We obtain numerically the scale invariance of the fluctuations of the relative participation number and the local density of states. We find signatures of extended vibrational modes when α>α_c and α_c depends on the magnitude of disorder. In order to confirm this claim, we also study the time evolution of an initially localized perturbation of the lattice. We show that the second moment of the spatial distribution of the energy displays a ballistic regime when α>α_c, in agreement with the occurrence of extended vibrational modes.     

Thermal analysis of InP-based quantum cascade lasers for efficient heat dissipation

We have theoretically investigated the thermal characteristics of double-channel ridge–waveguide InGaAs/InAlAs/InP quantum cascade lasers (QCLs) using a two-dimensional heat dissipation model. The temperature distribution, heat flow, and thermal conductance (G _th) of QCLs were obtained through the thermal simulation. A thick electroplated Au around the laser ridges helps to improve the heat dissipation from devices, being good enough to substitute the buried heterostructure (BH) by InP regrowth for epilayer-up bonded lasers. The effects of the device geometry (i.e., ridge width and cavity length) on the G _th of QCLs were investigated. With 5 μm thick electroplated Au, the G _th is increased with the decrease of ridge width, indicating an improvement from G _th=177 W/K⋅cm² at W=40 μm to G _th=301 W/K⋅cm² at W=9 μm for 2 mm long lasers. For the 9 μm×2 mm epilayer-down bonded laser with 5 μm thick electroplated Au, the use of InP contact layer leads to a further improvement of 13% in G _th, and it was totally raised by 45% corresponding to 436 W/K⋅cm² compared to the epilayer-up bonded laser with InGaAs contact layer. It is found that the epilayer-down bonded 9 μm wide BH laser with InP contact layer leads to the highest G _th=449 W/K⋅cm². The theoretical results were also compared with available obtained experimentally data.     

Connectivity of growing networks with link constraints

We propose a growing network model with link constraint, in which new nodes are continuously introduced into the system and immediately connected to preexisting nodes, and any arbitrary node cannot receive new links when it reaches a maximum number of links k_m. The connectivity of the network model is then investigated by means of the rate equation approach. For the connection kernel A(k)=k^γ, the degree distribution n_k takes a power law if γ≥1 and decays stretched exponentially if 0≤γ< 1. We also consider a network system with the connection kernel A(k)=k^α(k_m-k)^β. It is found that n_k approaches a power law in the α> 1 case and has a stretched exponential decay in the 0≤α< 1 case, while it can take a power law with exponential truncation in the special α=β=1 case. Moreover, n_k may have a U-type structure if α> β.     

Influence of Thomson effect on the resultant local Seebeck coefficient in thermoelectric composite materials

The resultant local Seebeck coefficient α _R (=α _S−α _T) at the interface of a thermoelement has not yet been measured, although it is an important factor governing the thermoelectric efficiency, where α _S is the local Seebeck coefficient and α _T is the one caused by the Thomson effect. It is shown in this paper that α _S, α _T, and α _R of the p- and n-type Cu/Bi–Te/Cu composites are obtained analytically and experimentally on the assumption that the local temperature of the composite on which the temperature difference ΔT is imposed varies linearly with changes in position along the composite. They were indeed estimated as a function of position from the local experimental data of R,ΔI,ΔT, and V generated by applying an additional current of ±I to the composite, where R is the electrical resistance and ΔI is a current generated by the composite. As a result, it was found that the absolute values of α _S at the hot interface of the p- and n-type composites are approximately 1.5 and 1.4 times higher than their lowest values in the middle region of the composite, respectively, while those of α _T are less than 8% of α _S all over the composite and are so small that the relation α _R≈α _S can be held. We thus succeeded in measuring α _R at the interfaces of the composite.     

Dependence of the resultant Seebeck coefficient on the thickness of Bi<Subscript>0.88</Subscript>Sb<Subscript>0.12</Subscript> alloy in welded M/Bi–Sb/M (M = Cu and Ni) composites

The local Seebeck coefficient α _L and the resultant Seebeck coefficient α _R of M/Bi_0.88Sb_0.12/M (M = Cu and Ni) composites with different thicknesses t _Bi–Sb of Bi–Sb alloy were measured as functions of z and T, where T is the absolute temperature, z is the distance from a center of Bi–Sb alloy to the middle point of two probes and α _L and α _R were measured using two probes separated by s=1.0 mm and s=t _Bi−Sb+0.1 mm, respectively. As a result, α _L was enhanced extremely at the position of 0.2–0.3 mm away from the interfaces, while the local temperature along a composite varies linearly with changes in z within Bi–Sb alloy. The local maximum of α _R at 344 K appeared at t _Bi−Sb≈0.9 mm, so that it is expected to increase up to −167 μV/K at t _Bi−Sb=0.87 mm from the expression fitted well to the experimental data, which is 2.1 times as large as the intrinsic α at 344 K of Bi–Sb alloy. Such a local enhancement in α _L would probably be caused by a temperature gradient across the depletion layer formed at the interface. The thermoelectric figure of merit ZT of a composite with an optimum t _Bi−Sb of 0.87 mm is expected to reach the large value of 0.98 at 344 K, which corresponds to 4.5 times as high a value as ZT=0.22 at 344 K of Bi–Sb alloy. It is thus considered that the increase in α _L at the interface is available as a useful mean of further increase in ZT of thermoelectric devices.     

Line strength and collisional broadening studies of hydrogen sulphide in the 1.58 μm region using diode laser spectroscopy

High resolution diode laser spectroscopy has been applied to the detection of hydrogen sulphide at ppm levels utilizing different transitions within the region of the ν ₁+ν ₂+ν ₃ and 2ν ₁+ν ₂ combination bands around 1.58 μm. Suitable lines in this spectral region have been identified, and absolute absorption cross sections have been determined through single-pass absorption spectroscopy and confirmed in the Doppler linewidth regime using cavity enhanced absorption spectroscopy (CEAS). The desire for a sensitive system potentially applicable to H₂S sensing at atmospheric pressure has led to an investigation on suitable transitions using wavelength modulation spectroscopy (WMS). The set-up sensitivity has been calculated as 1.73×10⁻⁸ cm⁻¹ s^1/2, and probing the strongest line at 1576.29 nm a minimum detectable concentration of 700 ppb under atmospheric conditions has been achieved. Furthermore, pressure broadening coefficients for a variety of buffer gasses have been measured and correlated to the intermolecular potentials governing the collision process; the H₂S–H₂S dimer well depth is estimated to be 7.06±0.09 kJ mol⁻¹.     

Polaron and ion diffusion in a poly(3-hexylthiophene) thin-film transistor gated with polymer electrolyte dielectric

Electrolytes are finding applications as dielectric materials in low-voltage organic thin-film transistors (OTFT). The presence of mobile ions in these materials (polymer electrolytes or ion gels) gives rise to very high capacitance (>10 μF/cm²) and thus low transistor turn-on voltage. In order to establish fundamental limits in switching speeds of electrolyte gated OFETs, we carry out in situ optical spectroscopy measurement of a poly(3-hexylthiophene) (P3HT) OTFT gated with a LiClO₄:poly(ethyleneoxide) (PEO) dielectric. Based on spectroscopic signatures of molecular vibrations and polaron transitions, we quantitatively determine charge carrier concentration and diffusion constants. We find two distinctively different regions: at V _G≥−1.5 V, drift-diffusion (parallel to the semiconductor/dielectric interface) of hole-polarons in P3HT controls charging of the device; at V _G<−1.5 V, electrochemical doping of the entire P3HT film occurs and charging is controlled by drift/diffusion (perpendicular to the interface) of ClO₄ ⁻ counter ions into the polymer semiconductor.     

Physical property characterization of bulk MgB<Subscript>2</Subscript> superconductor

We report synthesis, structure/micro-structure, resistivity under magnetic field [ρ(T)H], Raman spectra, thermoelectric power S(T), thermal conductivity κ(T), and magnetization of ambient pressure argon annealed polycrystalline bulk samples of MgB₂, processed under identical conditions. The compound crystallizes in hexagonal structure with space group P6/mmm. Transmission electron microscopy (TEM) reveals electron micrographs showing various types of defect features along with the presence of 3–4 nm thick amorphous layers forming the grain boundaries of otherwise crystalline MgB₂. Raman spectra of the compound at room temperature exhibited characteristic phonon peak at 600 cm^-1. Superconductivity is observed at 37.2 K by magnetic susceptibility χ(T), resistivity ρ(T), thermoelectric power S(T), and thermal conductivity κ(T) measurements. The power law fitting of ρ(T) give rise to Debye temperature (Θ_D) at 1400 K which is found consistent with the theoretical fitting of S(T), exhibiting Θ _D of 1410 K and carrier density of 3.81 × 10²⁸/m³. Thermal conductivity κ(T) shows a jump at 38 K, i.e., at T_c, which was missing in some earlier reports. Critical current density (J_c) of up to 10⁵ A/cm² in 1–2 T (Tesla) fields at temperatures (T) of up to 10 K is seen from magnetization measurements. The irreversibility field, defined as the field related to merging of M(H) loops is found to be 78, 68 and 42 kOe at 4, 10 and 20 K respectively. The superconducting performance parameters viz. irreversibility field (H_irr) and critical current density J_c(H) of the studied MgB₂ are improved profoundly with addition of nano-SiC and nano-diamond. The physical property parameters measured for polycrystalline MgB₂ are compared with earlier reports and a consolidated insight of various physical properties is presented.     

Monte Carlo test of the Goldstone mode singularity in 3D XY model

Monte Carlo simulations of magnetization and susceptibility in the 3D XY model are performed for system sizes up to L=384 (significantly exceeding the largest size L=160 considered in work published previously), and fields h ≥ 0.0003125 at two different coupling constants β=0.5, and β=0.55 in the ordered phase. We examine the prediction of the standard theory that the longitudinal susceptibility χ_∥ has a Goldstone mode singularity such that χ_∥ ∝h^-1/2 holds when h↦0. Most of our results, however, support another theoretical prediction that the singularity is of a more general form χ_∥ ∝h^ρ-1, where 1/2<ρ<1 is a universal exponent related to the ∼h^ρ variation of the magnetization.