共查询到18条相似文献,搜索用时 171 毫秒
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基于一维光子晶体超晶格的多通道平顶透射特性 总被引:1,自引:0,他引:1
基于一维光子晶体超晶格理论及耦合腔理论,提出了一种具有多个平顶透射峰的超晶格结构.把传统单一材料的耦合腔换成有限周期的光子晶体结构,形成一种超晶格结构.通过使插入的光子晶体的光场有效耦合,能够产生多个平顶透射峰.运用传输矩阵法,研究了该结构的光谱特性以及结构和材料参量对透射峰的位置和半峰全宽的影响.计算结果表明,该结构具有较宽的带隙,并且多个平顶透射峰对称分布,透射率高,误差容忍度好.详细讨论了透射峰确切位置的计算方法,并给出了严格的解析表达式. 相似文献
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利用边界耦合的方法构造了金属-介质-金属结构滤波器,该结构由一个凸环谐振腔与一个波导管耦合而成.通过有限元法数值仿真得到了该凸环腔体波导结构的磁场分布图、透射谱线和谐振波长分布,分析了各结构参量对滤波器传输特性的影响.结果表明,所提出的凸环滤波器具有透射峰窄,谱线平滑等特点,且阻带透射率最低可达0.001,通带透射率最高可达0.977.增大结构参量h2和neff时,相应的透射谱会发生明显的红移,增大结构参量L1时,透射谱几乎无变化.对结构参量进行调整和优化,相应的谐振波长可分布在第一通信窗口(850nm)和第三通信窗口(1 550nm)附近,能够很好地运用于光通信中. 相似文献
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研究了二维光子晶体量子阱的光谱特性,该量子阱结构由二维正方晶格圆柱晶胞光子晶体通过移去中间位置的介质圆柱层形成。由于光子晶体中的光子禁带充当了光子运动的势垒,类似于半导体量子阱中电子的行为,在光子晶体量子阱结构中会出现量子化的光子能态。文章利用平面波展开法计算了所用光子晶体的能带结构,利用传输矩阵方法计算了量子阱结构的透射光谱。计算结果表明,在光子禁带中出现了离散的透射峰,透射峰的强度随着势垒宽度的增加而减弱,个数随着势阱宽度的增加而增加,通过计算得到了其定量关系,并且讨论了透射峰频率与势阱宽度的关系。 相似文献
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用常压MOCVD法在GaAs衬底上生长了Zn1-xCdxSe-ZnSe多层结构.通过X-射线衍射谱和光致发光等方法判断,表明该材料为多量子阱结构.从室温下的透射光谱上可以观察到这种多量子阱中的n=1的激子吸收峰,并观测到起因子激子的ns量级的光学双稳态. 相似文献
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利用传输矩阵法,研究单势垒和双重势垒一维光子晶体量子阱结构的光传输特性.结果表明:垒层折射率总和大的单势垒光量子阱的透射峰更加精细,内部局域电场更加强;双重势垒光量子阱的透射峰比单势垒光量子阱的透射峰精细,内部局域电场也比单势垒光量子阱的强;随着垒层光子晶体周期数增大,双重势垒光量子阱内部局域电场增强,而且垒、阱层折射率总和之比越大,双重势垒光量子阱的内部局域电场增强速度越快,当双重垒层光子晶体周期数同时增大时,双重势垒量子阱内部局域电场增强速度最快,透射峰越加精细.随着阱层光子晶体周期数的增大,单势垒或双重势垒光量子阱的内部局域电场强度均下降,但透射峰的透射率不随之改变.该特性为设计新型可调高品质的量子光学器件提供指导. 相似文献
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含复介电常量一维光子晶体量子阱结构研究 总被引:3,自引:1,他引:3
利用传输矩阵法研究了实介电常量和含复介电常量时一维光子晶体的透射谱.结果表明:两种情况下均构成光量子阱结构,并且光量子阱结构的透射能带谱位置和结构相同,但在含复介电常量负虚部情况下共振透射峰出现很强的增益现象,而在含复介电常量正虚部情况下共振透射峰则呈现明显的衰减现象. 相似文献
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利用传输矩阵法研究了实介电常量和含复介电常量时一维光子晶体的透射谱.结果表明:两种情况下均构成光量子阱结构,并且光量子阱结构的透射能带谱位置和结构相同,但在含复介电常量负虚部情况下共振透射峰出现很强的增益现象,而在含复介电常量正虚部情况下共振透射峰则呈现明显的衰减现象. 相似文献
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利用二维时域有限差分方法研究了非对称纳米金属双缝结构在薄隔层情况下对光波的异常透射特性,以及狭缝长度、狭缝数目和入射角度对透射特性的影响.研究发现,该双缝结构中传导的表面等离激元波通过渗透中间隔层材料产生交叉耦合作用,形成对称和反对称耦合模式,导致其透射谱在特定波长位置处形成双共振峰传输和一个透射率为零的透射抑制现象;双缝结构中表面等离激元波交叉耦合作用的本质是其横向电场分量渗入中间隔层材料产生的相互干涉作用,而横向电场分量的初始相位差决定双缝结构中形成的表面等离激元波耦合模式的类型.由于双缝结构的透射极值与各狭缝腔内的法布里-珀罗共振效应密切相关,因此狭缝长度决定透射极值的波长位置,而狭缝数目和入射角度只影响透射峰的传输效率.该双缝结构具备光学滤波和空间分光功能,在新型纳米光子器件领域具有潜在的应用价值. 相似文献
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分析了含单负材料的光量子阱结构中的振荡透射模的性质.用两种单负(负介电常量或负磁导率)材料交替周期堆叠形成的两个光子晶体构造了一维光量子阱结构,该结构中仅其中一个光子晶体含有零有效位相带隙.数值计算结果发现,在零有效位相带隙内存在振荡透射模.通过改变井区域光子晶体内单负材料层的厚度及周期数,振荡透射模的数目、频率及频率间隔均可调节.振荡透射模对入射角度的依赖均很弱;随着入射角度的改变,缺陷模频率的相对改变量保持在0.02以下.该研究结果可用于设计多通道全向滤波器. 相似文献
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We investigate the propagation of electromagnetic wave through photonic quantum-well structures constructed by one-dimensional photonic crystals with defect layers. It is shown that non-destroyed high transmittance of each separated resonant mode can be found if photonic quantum-well structures are properly connected. Experimental fabrication of combined photonic quantum-well structures is carried out, and the results agree with the numerical calculations very well. 相似文献
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Zhong Yin Xiao Zi Hua Wang 《International Journal of Infrared and Millimeter Waves》2006,27(3):443-454
In this paper, the reflection and transmission coefficients of multi-layer dielectric and metamaterial media are derived by
transmission-line method. Then, it is applied to double periodic photonic crystal structure, which is composed of two thin
dielectric layers sandwiched by two thin metamaterial layers. The results show the structure has a large passband and a monotonous
symmetric rising band edges compared with that for a conventional photonic crystal structure. If a defect layer is introduced,
the localized modes appear. Furthermore, the number of transmission peaks in the photonic crystal structure can be tuned by
changing the thickness of the defect in the structure. This photonic crystal may find application to broadband reflectors
and the multi-wavelength narrow band optical filters. 相似文献
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We report the lateral shifts of the transmitted waves in a one dimensional chiral photonic crystal by using the stationary-phase approach. It is revealed that two kinds of lateral shifts are observed due to the existence of cross coupling in chiral materials, which is different from what has been observed in previous non-chiral photonic crystals. Unlike the chiral slab, the positions of lateral shift peaks are closely related to the band edges of band gap characteristics of periodic structure and lateral shifts can be positive as well as negative. Besides, the lateral shifts show a strong dependence on the chiral factor, which varies the lateral shift peaks in both magnitudes and positions. These features are desirable for future device applications. 相似文献
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A type of photonic multiple quantum well (PMQWs) structure made of two different photonic crystals (PCs) with two kinds of single-negative materials is investigated. It is demonstrated by transfer matrix method that omnidirectional resonance modes are generated. The number of the resonance modes can be controlled by adjusting the periodic structure of the constituents. The resonance tunneling modes are weak dependence on incident angle and the scaling of the barrier photonic crystals. When the losses are taken into account, the effects of the losses coming from ENG media and MNG media on the resonance modes are striking difference. 相似文献
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The near-infrared (NIR) narrow filter properties in the transmission spectra of a one-dimensional photonic crystal doped with semiconductor metamaterial photonic quantum-well defect (PQW) were theoretically studied. The behavior of the defect mode as a function of the stack number of the PQW defect structure, the filling factor of semiconductor metamaterial layer, the polarization and the angle of incidence were investigated for Al-doped ZnO (AZO) and ZnO as the semiconductor metamaterial layer. It is found that the frequency of the defect mode can be tuned by variation of the period of the defect structure, polarization, incidence angle, and the filling factor of the semiconductor metamaterial layer. It is also shown that the number of the defect mode is independent of the period of the PQW defect structure and is in sharp contrast with the case where a common dielectric or metamaterial defect are used. The results also show that for both polarizations the defect mode is red-shifted as the number of the defect period and filling factor increase. An opposite trend is observed as the angle of incidence increases. The proposed structure could provide useful information for designing new types of tuneable narrowband filters at NIR region. 相似文献
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In this work, we theoretically analyze tunable filtering properties in a semiconductor-dielectric photonic crystal (SDPC) containing doped semiconductor defect in the mid-infrared frequency region. We consider two possible configurations of filter structures, the symmetric and asymmetric ones. With a defect of the doped n-type semiconductor, n-Si, the resonant transmission peak can be tuned by varying the doping concentration, that is, the peak wavelength will be shifted to the position of lower wavelength for both structures. Additionally, by increasing the defect thickness, it is also possible to have a filter with multiple resonant peaks, leading to a multichannel filter. The results provide another type of tunable filter in the defective SDPC that could be of technical use for semiconductor applications in optical electronics. 相似文献