脉冲激光沉积LiNi0.5Mn0.5O2薄膜正极性能

高能量密度、功率密度和高温度稳定性的全固态薄膜锂离子电池是微电子器件的理想电源.开发新型的大比容量正极薄膜材料是解决问题的关键之一.与LiCoO2正极相比,层状结构的LiNi0.5Mn0.5O2有更高的可逆比容量和结构稳定性.本文应用脉冲激光沉积法制备LiNi0.5Mn0.5O2沉积薄膜,研究了衬底材料、温度对薄膜的微观结构、表面形貌及组分的影响.由LiNi0.5Mn0.5O2电极组装半电池,研究了薄膜的电化学性能与晶体结构、表面形貌及组分间的关系,表征了LiNi0.5Mn0.5O2沉积薄膜于不同充电截止电压的循环稳定性及倍率性能,并讨论了LiNi0.5Mn0.5O2薄膜的结构特点.     

二次锂离子电池正极活性材料—LiCoO_2制备研究进展

本文简单对比了高温相 LiCoO2和低温相 LiCoO2的结构和电化学性能的差别，详细介绍了 LiCoO2的各种合成方法并评述了不同合成方法、反应条件对 LiCoO2结构、形貌及电化学性能的影响，并提出了今后研究的方向。     

单步电沉积法制备CuInS2薄膜

采用单步电沉积法在Mo基底上制备了高质量的CuInS2薄膜. 用X射线衍射仪(XRD)和扫描电子显微镜(SEM)表征了样品的结构和形貌, 研究了沉积电位、退火温度、pH值、反应物浓度等工艺条件对制备的CuInS2薄膜形貌、组分及性能的影响. 制备的CuInS2薄膜致密平整, 呈黄铜矿结构, 晶粒大小为1-2 μm. 用紫外-可见光分光光度计测试了其光学性能, 计算得到常温下禁带宽度为1.41 eV, 非常适合用作薄膜太阳电池的吸收层材料.     

退火温度对CdSe纳米薄膜的形成及光电性能影响

在室温下,采用循环伏安法在ITO上沉积CdSe纳米薄膜。利用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)、X射线光电子能谱分析(XPS)、紫外-可见(UV-VIS)分光光度计以及电化学工作站对不同温度退火后的CdSe纳米薄膜的晶体结构、形貌、光学性能、光电化学性能进行表征和测试。结果表明,退火温度对CdSe纳米薄膜的形貌和性能起到关键性作用。薄膜表面平整、厚度均匀,且由呈纳米颗粒状的立方相CdSe构成;经退火后,CdSe纳米颗粒出现不同程度的长大现象,Se含量随退火温度的升高而减少。紫外-可见吸收光谱表明随着退火温度的升高,CdSe纳米薄膜对可见光的吸收发生红移,表明禁带宽度逐渐减小,表现出量子尺寸效应。通过光电流测试表明随着退火温度的升高,CdSe薄膜的光电响应效应显著提高。     

退火温度对CdSe纳米薄膜的形成及光电性能影响

在室温下,采用循环伏安法在ITO上沉积CdSe纳米薄膜。利用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)、X射线光电子能谱分析(XPS)、紫外-可见(UV-VIS)分光光度计以及电化学工作站对不同温度退火后的CdSe纳米薄膜的晶体结构、形貌、光学性能、光电化学性能进行表征和测试。结果表明,退火温度对CdSe纳米薄膜的形貌和性能起到关键性作用。薄膜表面平整、厚度均匀,且由呈纳米颗粒状的立方相CdSe构成;经退火后,CdSe纳米颗粒出现不同程度的长大现象,Se含量随退火温度的升高而减少。紫外-可见吸收光谱表明随着退火温度的升高,CdSe纳米薄膜对可见光的吸收发生红移,表明禁带宽度逐渐减小,表现出量子尺寸效应。通过光电流测试表明随着退火温度的升高,CdSe薄膜的光电响应效应显著提高。     

掺杂P,Al和La元素的锂离子电池材料的微波合成研究

采用微波合成法制备了含掺杂P,Al和La元素的正极材料LiCoO2,确定了工艺条件,包括反应时间、微波功率和反应温度.采用XRD,SEM和电化学测试仪研究了添加元素对LiCoO2结构和电化学性能的影响.研究发现,微波功率和反应时间对产物的结构有比较明显的影响.充放电试验结果表明,掺加La元素正极材料LiCoO2首次充放电容量达到了130 mAh.g-1.     

低温熔盐中电沉积Sm-Co合金膜及其磁性能

在353 K的尿素-乙酰胺-NaBr-KBr熔体中, 用恒电位电解法在Cu基片上制备了Sm-Co合金膜. 利用循环伏安法研究了熔体的电化学行为. 电化学实验结果表明, 在Pt电极上, Co(II)+2e→Co(0)是一步完全的不可逆反应; 测得CoCl2-尿素-乙酰胺-NaBr-KBr熔体中, Co(II)在Pt电极上的传递系数α=0.31, 扩散系数D0=4.78×10^-5 cm2·s-1; Sm(III)难以单独沉积, 但能被Co(II)诱导共沉积, 在不同阴极电位下制备出不同Sm含量的非晶合金膜. 用等离子发射光谱仪(ICP)检测薄膜成分, 用SEM观察了薄膜的表面形貌结构, 用XRD和振动样品磁强计(VSM)分析样品退火前后的晶相和磁性能变化特征. 结果表明, 在923 K进行退火30 s后Sm-Co薄膜由非晶转变为多晶结构, 并以hcp晶相结构为主; 退火和Sm含量对Sm-Co合金膜的磁性能有重要的影响.     

钛掺杂对不同形貌LiCoO2电化学性能的影响

采用SEM、XRD、恒电流充放电、电化学交流阻抗谱等方法研究了钛掺杂对不同形貌LiCoO2电化学性能的影响. 结果表明, 钛掺杂在不改变材料晶体结构的情况下, 能显著地改善LiCoO2的电化学性能, 且在较高倍率放电制度下(1 C), 掺杂对不同形貌LiCoO2的放电电压平台的影响效果不同. 掺杂后的二次粒子团聚体以1 C放电, 20次循环后3.8 V平台(电压大于3.8 V时的放电容量占总放电容量的百分比) 的保持率为60％, 优于掺杂后的大粒径一次粒子分散体的平台保持率(40％). 电化学交流阻抗谱研究表明, 钛掺杂对于抑制LiCoO2二次粒子在高倍率放电制度下循环过程中电化学阻抗的增加更为有效.     

退火温度对TiO_2/CdSe纳米片异质结薄膜光电性能的影响

采用水热法在FTO上制备(001)高活性晶面主导的TiO_2纳米片薄膜,利用循环伏安法在TiO_2纳米片薄膜上沉积CdSe颗粒,制备了TiO_2/CdSe纳米片异质结薄膜。分别在150、250、350、450℃,氩气保护气氛中对样品进行退火。利用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、X射线光电子能谱分析仪(XPS)、紫外-可见(UV-Vis)分光光度计以及电化学工作站对不同温度退火后的TiO_2/CdSe纳米片异质结薄膜的微观形貌、晶体结构、光电化学性能进行表征和测试。结果表明:六方相CdSe纳米颗粒均匀包覆在TiO_2纳米片表面,直径30 nm左右;随着退火温度的升高CdSe纳米颗粒长大,形成光滑的CdSe薄膜,且晶化程度提高;TiO_2纳米片表面的Se元素与Cd元素发生氧化;TiO_2/CdSe纳米片异质结薄膜对可见光的吸收光谱发生红移,禁带宽度逐渐减小。光电化学性能测试表明随着退火温度的升高,TiO_2/CdSe纳米片异质结薄膜的光电流密度显著提高,开路电压减小,但由于SeO_2和CdO的出现,导致填充因子减小,影响光电转换效率的提高。在本实验条件下,TiO_2/CdSe纳米片异质结薄膜的最佳退火温度为150℃,填充因子为0.77,光电转换效率达到3.12%。     

LaNiO3/Pd复合薄膜电极材料在碱性溶液中的电化学行为研究

用射频磁控溅射法在Si(111)衬底上沉积制备金属Pd膜、LaNiO3单层膜和Pd/LaNiO3复合薄膜,利用XRD,SEM,EDS能谱、四元探针和电化学方法系统研究了退火处理和表面覆Pd对Pd/LaNiO3复合薄膜电极的相组织结构、表面形貌、电学以及电化学储氢行为的影响。结果表明,700℃退火1 h后,LaNiO3薄膜具有结晶度较佳的钙钛矿型菱方结构组织和最小的电阻率(0.79 mΩ·cm),退火温度高于800℃后,LaNiO3菱方型结构组织开始分解,电阻率增加。LaNiO3薄膜在空气中退火后其表面化学吸附氧转变为晶格氧,导致LaNiO3薄膜氧元素含量明显增加。电化学测试结果表明,在碱液中金属Pd膜具有良好的析氢电催化活性和较好的电化学储氢性能,其最大放电容量为130 mAh·g-1。退火态LaNiO3单膜电极放电容量很小(27 mAh·g-1),当表面覆Pd后退火态LaNiO3/Pd复合薄膜电极放电容量增加至181 mAh·g-1,扣除其表面Pd膜吸氢容量后LaNiO3薄膜电极的实际放电容量最高达到400 mAh·g-1。LaNiO3表面镀Pd后能极大改善和提高LaNiO3薄膜电极的电催化活性和电化学储氢容量。     

以LiCoO2为阴极的全固态薄膜锂电池的研究

Amorphous and oriented polycrystalline LiCoO2 thin films, used as cathode material for an all-solid-state thin film battery, were fabricated by using RF magnetron sputtering and annealed at different temperatures. The morphology and structure of LiCoO2 thin films were characterized by scanning electron microscopy and X-ray diffraction. All-solid-state thin film batteries, comprised of LiCoO2 cathode films with different structures, lithium phosphorous oxynitride electrolyte film and metallic lithium anode film, was successfully prepared and their properties were examined by chronopotentiometry. Results showed that the structure and crystallinity of the LiCoO2 films strongly influenced the electrochemical performance of all-solid-state thin film lithium batteries. Worth nothing was the battery with an oriented polycrystalline LiCoO2 film it exhibited the best electrochemical performance, and delivered a discharge capacity of ～55.4 μAh/cm2μm. Furthermore, when subjected to over 450 charge/discharge cycles, that battery suffered no obvious fode in capacity.     

旋涂水溶液前驱体制备氧化锌薄膜及其性质

通过旋涂法, 采用Zn(OAc)2·2H2O和聚环氧乙烷(PEO)的水溶液为前驱体在不同的热处理温度下制备了ZnO薄膜. PEO的加入增加了溶液的成膜性, 其较低的热分解温度有利于制得纯净的ZnO薄膜. 文中考察了在不同热处理温度下制备的ZnO薄膜的形貌、结晶性、带隙(Eg)以及电导性. 原子力显微镜(AFM)测试表明在热处理温度为400、450和500 ℃制备的ZnO薄膜的粗糙度均方根值分别为3.3、2.7和3.6 nm. 采用透射电子显微镜(TEM)测试发现ZnO薄膜中含有大量纳晶粒子. 通过测试ZnO薄膜的UV-Vis吸收光谱, 根据薄膜位于373 nm处的吸收带边计算得到ZnO的带隙为3.3 eV. 通过对薄膜的电流-电压(I-V)曲线的测试计算得到在热处理温度为400、450和500 ℃制备的ZnO薄膜的电阻率分别为3.3×109、2.7×109和6.6×109 Ω·cm. 450 ℃时制备的ZnO薄膜的电阻率最小, 主要是由于较高的热处理温度有利于提高薄膜的纯度、密度和吸附氧. 而纯度较高、密度较大的薄膜电阻率比较小; 吸附氧含量增加, 晶界势垒增大, 电阻率增大. 因此在纯度和吸附氧的双重作用下450 ℃时制备的ZnO薄膜的电阻率最小, 而500 ℃时制备的ZnO薄膜的电阻率最大.     

脉冲激光沉积LiFePO4阴极薄膜材料及其电化学性能

采用脉冲激光沉积结合高温退火的方法在不锈钢基片上制备了LiFePO₄薄膜电极. XRD谱图显示, 经650 ℃退火制得的是具有橄榄石结构的LiFePO₄薄膜. 充放电测试表明, LiFePO₄薄膜具有3.45/3.40 V的充放电平台, 与LiFePO₄粉体材料相当. 首次放电容量约为27 mAh•g^－1, 充放电循环100次后容量衰减51%.     

Phase transition properties of vanadium oxide films deposited by polymer-assisted deposition

Vanadium dioxide (VO₂) films were synthesized on mica substrates by a polymer-assisted deposition method, followed by rapid annealing with different annealing temperatures. The crystalline structure and morphology of the films were investigated by XRD and FE-SEM, and their phase transition properties were studied by in situ FT-IR. The results indicated that the annealing temperature affected the crystalline structure and morphology of the films remarkably, which then resulted in varied phase transition properties. In particular, the films annealed at higher temperature showed more polycrystalline structure, increased particle size and reduced phase transition intensity. But the films exhibited the similar hysteresis temperature width with increasing annealing temperature.     

Study of the structure and mechanical properties of hexagonal BaTiO3 thin films prepared by sol鈥揼el processing

Hexagonal barium titanate (HBT) thin films were prepared on borosilicate plate substrates via sol–gel method using the dip-coating process. The structure, texture and morphology of the thin film were analyzed by X-ray diffraction, atomic force microscopy, nanoindentation technique, and transmission electron microscopy. The results showed that the thin film annealed at 700?°C crystallized with BaTiO₃ hexagonal phase and traces of Ba₂TiO₄ (secondary phase). The nanoparticles and the RMS roughness of the sample treated at 700?°C presented high values when compared with those thermally treated at lower temperatures. The hardness and Youngs??modulus of the thin films increased with increasing in grain size, and the thin film annealed at 700?°C with crystallite size about 10?nm presented multiple “pop-in??events during nano-indentation loading curves. The annealing temperature, growth size and surface roughness were discussed in connection with the HBT mechanical properties.     

纯相Li_2MnO_3薄膜的制备及作为锂离子电池正极材料的电化学行为

采用固相烧结法制备了纯相Li2MnO3正极材料及靶材,采用脉冲激光沉积(PLD)法在氧气气氛、不同温度下沉积了Li2MnO3薄膜.通过X射线衍射(XRD)和拉曼(Raman)光谱表征了薄膜的晶体结构,采用扫描电镜(SEM)观察薄膜形貌及厚度,利用电化学手段测试了Li2MnO3薄膜作为锂离子电池正极材料性能.结果表明,PLD方法制备的纯相Li2MnO3薄膜随着沉积温度升高薄膜结晶性变好.25℃沉积的薄膜难以可逆充放电,400℃沉积的薄膜具有较高的电化学活性和循环稳定性.相对于粉末材料,400与600℃制备的Li2MnO3薄膜电极平均放电电位随着循环次数的衰减速率明显低于相应的粉体材料.     

采用新颖喷墨打印技术制备的薄膜LiCoO2电极及其电化学性能

采用喷墨打印技术制备了LiCoO2薄膜电极. 用X射线衍射、扫描电镜(SEM)、循环伏安和恒电流充放电试验对薄膜电极进行结构表征和电化学性能测试. SEM结果表明, 所制备的薄膜电极表面粒子分布均匀, 厚度约为1.27 μm. 经过轻微热处理(450 ℃, 30 min)的薄膜LiCoO2电极呈现出稳定的充放电循环性能. 当以20 μA/cm2进行充放电时, 第50次循环容量保持率约为首次放电容量(81 mA·h/g)的87%, 10次循环后的充放电过程的充放电效率均接近100％.     

Influence of rapid thermal annealing on structure and interfacial characteristic of ZnO thin films

Highly C‐axis oriented ZnO thin film was manufactured by radio‐frequency magnetron sputtering technique on Si (111) substrate. The main objective was to study the influence of rapid thermal annealing (RTA) temperature on the structure and interfacial characteristic of ZnO thin films. X‐ray diffraction results showed that the ZnO thin films annealed at 600 °C by RTA technique had a perfect C‐axis preferred orientation compared to the other ZnO thin films, and the full width at half maximum of ZnO (002) rocking curve measurements indicted that the RTA‐annealed ZnO thin films possessed better crystal structure. Atom force microscopy displayed that the grain size of RTA‐annealed ZnO thin films was fine and uniform compared with the as‐deposited ZnO thin films, although the grains grew in RTA process and the root meant square roughness was smaller than that of as‐deposited films. High‐resolution transmission electron microscopy showed that there was an obvious amorphous layer between ZnO thin films and Si substrate, but the RTA‐annealed ZnO thin films exhibited larger and denser columnar structure and a preferred orientation with highly c axis perpendicular to the amorphous layer. Copyright © 2012 John Wiley & Sons, Ltd.     

Structure and morphology of nanostructured zinc oxide thin films Prepared by dip-vs. spin-coating methods

In this study, we use dipping and spinning methods to coat glass slides with sol-gel ZnO thin films, composed of zinc acetate dihydrate, monoethanolamine (MEA), de-ionized water and isopropanol. The effect of the annealing temperature on the structural morphology and optical properties of these films is investigated. These ZnO films were preheated at 275 °C for 10 min and annealed either at 350, 450 or 550 °C for 60 min. As-deposited films, formed by amorphous zinc oxide-acetate submicron particles, are transformed into a highly-oriented ZnO after thermal treatment. The surface morphology, phase structure and optical properties of the thin films were investigated by scanning electron microscopy, X-ray diffraction (XRD) and optical transmittance. Both techniques produced nanostructured ZnO thin films with well-defined orientation. The annealed films were transparent in the visible range with an absorption edge at about 375 nm and a transmittance of ca 85–90% with an average diameter of 40 nm. XRD results show the film was composed of polycrystalline wurtzite, with a preferential c-axis orientation of (002) and a single sharp XRD peak at 34.40, corresponding to the hexagonal ZnO. The grain size is increased by the annealing temperature. Both coating techniques create sol-gel ZnO films with the potential for application as transparent electrodes in optic and electronic devices.