SOI梯形大截面单模脊形波导的研制

报道了硅片直接键合ＳＯＩ单模梯形大截面脊形波导的研制，对于小长为１．３μｍ的光这种脊形波导的传输损耗小于０．８５ｄＢ／ｃｍ。     

集成光学声光可调谐波长滤波器的研制

阐述了中心波长为１．５２３μｍ的集成光学声光可调谐波长滤波器的各项理论参数、制作工艺以及性能测试。在有效声光相互作用长度１６ｍｍ、射频驱动功率３５ｍＷ时,获得了模式转换效率大于９９％、插入损耗小于－４．ｄＢ、带宽１．６ｎｍ、３ｄＢ调谐范围为１４０ｎｍ的实验结果。     

模折射率透镜的研制

本文报道在K7玻璃衬底上制作光波导模折射率透镜的实验结果,包括透镜的设计、制备及性能的测量。     

BESOI光波导的研制

本文通过大量实验,采用键合及背腐蚀方法研制成功 SOI 光波导,传输损耗仅0.85dB/cm.     

ISOLAN在线分离器束流光学设计

根据荷电粒子传输理论,导出兰州在线同位素分离器ISOLAN的束流光学设计,并给出整机的主要参数和总体布局.     

SOI大截面单模脊形X型分支波导的研制

报道了硅片直接键合（ＳＤＢ）ＳＯＩ大截面单模脊形互型分支波导的研制．对于波长为１．３μｍ的光，在θ＝２°小分支角时，这种分支波导的通道串音小于－２０ｄＢ，辐射损耗小于０．３ｄＢ．直通传输损耗小于０．８５ｄＢ／ｃｍ．     

多模干涉型GaAs光功分器的研制

采用导模传输分析法设计了多模干涉型１×４ 光功分器。根据所确定的器件结构参数, 结合器件设计和制作过程中可能遇到的因素, 详细分析了器件中自映像效应多模波导的宽度和长度、波导的折射率等结构参数对器件性能的影响。进行了多模干涉型 Ｇａ Ａｓ １×４ 光功分器的制作和测试。测试结果表明, 所研制的器件实现了１×４ 光功分器功能。针对实验过程和测试结果中遇到的问题进行了讨论, 并提出了进一步完善器件性能的方法。     

SOI及GeSi/Si脊形光波导的模式与波导几何结构

用有效折射率方法对SOI（绝缘体上硅）及GeSi/Si脊形光波导的单模条件进行了模拟,与Soref的单模条件进行了比较,将两者与实验结果进行了比较,得到了与实验结果符合得非常好的单模条件。同时对多模波导进行了模拟,得到了波导承载一阶和二阶模的条件。     

新型SOI基3×3多模干涉波导光开关的优化设计

提出了一种基于SOI材料的新型3×3多模干涉(MMI)波导光开关,在开关的多模波导中引入折射率调制区,利用硅的等离子色散效应改变多模波导局部区域的折射率,使得光场在传输过程中的相位发生变化,进而确定输出光场位置,实现开关功能。采用有限差分光束传播法(FD-BPM)方法对开关的各个状态进行了模拟和分析,并对器件的结构参量进行了优化设计,采用优化后的结构参量,开关可实现的最大消光比达到-17.27 dB。     

1×4 MMI Splitter Based on Rib SOI Waveguide

In this paper, a 1×4 MMI splitter based on silicon-on-insulator (SOI) by effective index method and guide mode method is designed. The fabrication tolerance was analyzed. The device was fabricated and near-field output was obtained.     

1×4 MMI Splitter Based on Rib SOI Waveguide

In this paper, a 1×4 MMI splitter based on silicon-on-insulator (SOI) by effective index method and guide mode method is designed. The fabrication tolerance was analyzed. The device was fabricated and near-field output was obtained.     

基于智能剥离技术的SOI材料制备

优化了硅片低温直接键合与智能剥离技术的工艺流程，在550℃，2.1×10^-2 Pa条件下制备了SOI材料，其顶层单晶Si膜的表面粗糙度为8.5 nm，缺陷密度为90 cm^-2，键合强度达到153.7 kg/cm²，形成的SOI结构除了可以形成三维集成电路中有源层间良好的绝缘层，避免了高温过程对有源层器件结构、材料及性能的影响，还能为三维集成电路后续有源层的制造提供高质量的单晶硅材料. 关键词： 绝缘体上硅 智能剥离 低温直接键合     

SOI通道转换型多模干涉耦合器的研究

设计和制作了基于SOI的通道转换型多模干涉耦合器。用二维BPM方法分析了耦合器的性能与多模波导宽度和长度的依赖关系.制作出的耦合器能实现良好的通道转换,器件的功率转换比为73,附加损耗为2.2 dB.提高器件制作的精度将能进一步改善耦合器的性能.     

Etched-Diffraction-Grating-Based Planar Waveguide Demultiplexer on Silicon-on-Insulator

An optical wavelength demultiplexer with the etched diffraction grating (EDG) on the silicon-on-insulator (SOI) material is demonstrated. Fabricated by the wet-anisotropic-etching method, 90° turning mirrors are used to bend waveguides, and the size of the EDG-based demultiplexer is minimized to only 16×2.5 mm². The crosstalk is below −16 dB. The on-chip loss is about 9.97 dB, which is composed of about 8.72 dB excess loss and 1.25 dB diffraction loss. The polarization-dependent central wavelength shift is below 0.13 nm, and the polarization-dependent loss is about 0.35 dB. The sources of the crosstalk and loss are discussed in details, and the related measures to improve the performance are also presented.     

High Speed Demultiplexer Based on a Three-Wavelength SLA

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A compact in-plane photonic crystal channel drop filter

This paper presents a novel in-plane photonic crystal channel drop filter.The device is composed of a resonant cavity sandwiched by two parallel waveguides.The cavity has two resonant modes with opposite symmetries.Tuning these two modes into degeneracy causes destructive interference in bus waveguide,which results in high forward drop efficiency at the resonant wavelength.From the result of numerical analysis by using two-dimensional finite-difference time-domain method,the channel drop filter has a drop efficiency of 96% and a Q value of over 3000,which can be used in dense wavelength division multiplexing systems.