Selective photorefractive scattering in LiNbO<Subscript>3</Subscript>:Rh crystals

Photorefractive scattering occurs in rhodium-doped lithium niobate crystals irradiated by coherent light. The photorefractive scattering has both wide-angle and selective components. The results of experimental investigation of selective photorefractive scattering in LiNbO₃:Rh crystals and calculation of the spatial structure of scattering are reported. The selective scattering is regarded as a kind of a frequency-degenerate fourwave vector interaction.     

Physical properties of Ba<Subscript>0.8</Subscript>Sr<Subscript>0.2</Subscript>TiO<Subscript>3</Subscript> thin films

The behavior of material constants in ferroelectric Ba_0.8Sr_0.2TiO₃ thin films is studied depending on the misfit strain at room temperature in the context of nonlinear thermodynamic potential of the phenomenological theory. Some constants are found to undergo drastic changes with the alternating strain at the interfaces. The gathered results allow one to evaluate the material constants for a specific film and to outline the direction in searching the ways to synthesize films with the needed properties.     

Nonlinear dielectric response of epitaxial Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript> TiO<Subscript> 3</Subscript> thin films

Based on Landau-Devonshire (LD)-type phenomenological thermodynamic theory, the electric field dependence of the dielectric properties of tetragonal single-domain barium strontium titanate(Ba_1-xSr_xTiO₃) films on cubic substrates is theoretically investigated by taking into account the high order terms of the polarization. At room temperature, the nonlinear dielectric responses of epitaxial Ba_0.6Sr_0.4TiO₃ films are provided by adjusting the film thickness and growth temperature. The strong nonlinearity of relative dielectric constant and pyroelectric coefficient are attained around critical film thickness on MgO (69 nm) and LaAlO₃ (132 nm) substrates or critical growth temperature on MgO (337 °C) substrate with respect to epitaxy-induced lattice misfit and thermal stresses during deposition. This can be explained that small compressive stresses are effective to support high nonlinearity of dielectric constant and pyroelectric coefficient for Ba_0.6Sr_0.4TiO₃ films irrespective of whether they are on compressive substrate or tensile substrate. It is also predicted that a large tunability may be achieved by altering processing conditions, such as the film thickness and growth temperature for different substrates. Our theoretical results are in good agreement with the experimental data reported in literature.     

Inelastic neutron scattering and lattice dynamics of NaNbO<Subscript>3</Subscript> and Sr<Subscript>0.70</Subscript>Ca<Subscript>0.30</Subscript>TiO<Subscript>3</Subscript>

NaNbO₃ and (Sr,Ca)TiO₃ exhibit an unusual complex sequence of temperature- and pressure-driven structural phase transitions. We have carried out lattice dynamical studies to understand the phonon modes responsible for these phase transitions. Inelastic neutron scattering measurements using powder samples were carried out at the Dhruva reactor, which provide the phonon density of states. Lattice dynamical models have been developed for SrTiO₃ and CaTiO₃ which have been fruitfully employed to study the phonon spectra and vibrational properties of the solid solution (Sr,Ca)TiO₃.      

Memory effect in Ba<Subscript>0.85</Subscript>Sr<Subscript>0.15</Subscript>TiO<Subscript>3</Subscript> ferroelectric films on silicon substrates

Ba_0.85Sr_0.15TiO₃ ferroelectric films on single-crystal silicon wafers were grown and studied. X-ray diffraction and electron microscopy studies showed that the films are characterized by a limited texture with a perovskite structure. It was shown that the grown films can be used as recording media for nonvolatile rerecorded data carriers in kinematic-type external memory devices. A possible mechanism of data recording and storage in the structures was considered.     

Nature of EPR line asymmetry in La<Subscript>0.70</Subscript>Ca<Subscript>0.25</Subscript>Ba<Subscript>0.05</Subscript>MnO<Subscript>3</Subscript>

It was pointed out in some works that asymmetry of an electron paramagnetic resonance (EPR) line is generally caused by both the electrical conduction and the nondiagonal elements of the dynamic susceptibility of a magnetic subsystem. Direct measurements of the temperature dependences of the conductivity and the EPR line shape in a La_0.70Ca_0.25Ba_0.05MnO₃ sample showed that the conduction makes the predominant contribution to the EPR line asymmetry.     

Two-dimensional electron gas at the interface of Ba<Subscript>0.8</Subscript>Sr<Subscript>0.2</Subscript>TiO<Subscript>3</Subscript> ferroelectric and LaMnO<Subscript>3</Subscript> antiferomagnet

The temperature dependence of the electrical resistance has been studied for heterostructures formed by antiferromagnetic LaMnO₃ single crystals of different orientations with epitaxial films of ferroelectric Ba_0.8Sr_0.2TiO₃ deposited onto them. The measured electrical resistance is compared to that exhibited by LaMnO₃ single crystals without the films. It is found that, in the samples with the film, for which the axis of polarization in the ferroelectric is directed along the perpendicular to the surface of the single crystal, the electrical resistance decreases significantly with temperature, exhibiting metallic behavior below 160 K. The numerical simulations of the structural and electronic characteristics of the BaTiO₃/LaMnO₃ ferroelectric?antiferromagnet heterostructure has been performed. The transition to the state with two-dimensional electron gas at the interface is demonstrated.     

An experimental and theoretical study of Ni impurity centers in Ba<Subscript>0.8</Subscript>Sr<Subscript>0.2</Subscript>TiO<Subscript>3</Subscript>

The local environment and the charge state of a nickel impurity in cubic Ba_0.8Sr_0.2TiO₃ are studied by XAFS spectroscopy. According to the XANES data, the mean Ni charge state is ~2.5+. An analysis of the EXAFS spectra and their comparison with the results of first-principle calculations of the defect geometry suggest that Ni²⁺ ions are in a high-spin state at the B sites of the perovskite structure and the difference of charges of Ni²⁺ and Ti⁴⁺ is mainly compensated by distant oxygen vacancies. In addition, a considerable amount of nickel in the sample is in a second phase BaNiO_{3 ? δ}. The measurements of the lattice parameter show a decrease in the unit cell volume upon doping, which can indicate the existence of a small amount of Ni⁴⁺ ions at the B site.     

Contactless density measurement of high-temperature BiFeO<Subscript>3</Subscript> and BaTiO<Subscript>3</Subscript>

The density of liquid and undercooled BiFeO₃ and high-temperature solid, liquid, and undercooled BaTiO₃ was measured with an electrostatic levitation furnace. The density was obtained with an ultraviolet-based imaging technique that allowed excellent sample contrast throughout all phases of processing, including at elevated temperatures. Over the 1250- to 1490-K temperature range, the density of liquid BiFeO₃ can be expressed as _L(T)=6.70×10³–1.31(T-T_m)(kgm^-3) (±2 per cent) with T_m=1423 K, yielding a volume coefficient of thermal expansion _L(T)=1.9×10^-4 K^-1. For BaTiO₃, the density of the solid can be expressed as _S(T)=5.04×10³–0.21(T-T_m) (T_m=1893 K) over the 1220- to 1893-K range, yielding a volume coefficient of thermal expansion _S(T)=4.2×10^-5 K^-1, whereas that of the liquid can be expressed as _L(T)=4.04×10³-0.34(T-T_m) over the 1300- to 2025-K range with _L(T)=8.4×10^-5 K^-1. PACS 77.84.-s; 81.05.Je; 81.20.n     

Nanocrystalline Li<Subscript>2</Subscript>TiO<Subscript>3</Subscript> electrodes for supercapattery application

Nanocrystalline Li₂TiO₃ was successfully synthesized using solid-state reaction method. The microstructural and electrochemical properties of the prepared material are systematically characterized. The X-ray diffraction pattern of the prepared material exhibits predominant (002) orientation related to the monoclinic structure with C2/c space group. HRTEM images and SAED analysis reveal the well-developed nanostructured particles with average size of ～40 nm. The electrochemical properties of the prepared sample are carried out using cyclic voltammetry (CV) and chronopotentiometry (CP) using Pt//Li₂TiO₃ cell in 1 mol L^?1 Li₂SO₄ aqueous electrolyte. The Li₂TiO₃ electrode exhibits a specific discharge capacity of 122 mAh g^?1; it can be used as anode in Li battery within the potential window 0.0–1.0 V, while investigated as a supercapacitor electrode, it delivers a specific capacitance of 317 F g^?1 at a current density of 1 mA g^?1 within the potential range ?0.4 to +0.4 V. The demonstration of both anodic and supercapacitor behavior concludes that the nanocrystalline Li₂TiO₃ is a suitable electrode material for supercapattery application.     

Light scattering in single crystals of nonlinear-optical photorefractive LiNbO<Subscript>3</Subscript>:Cu and LiNbO<Subscript>3</Subscript>:Zn

Comparative studies are made of the photorefractive scattering of light in nonlinear single crystals of lithium niobate with congruent compositions (LiNbO₃) doped with "photorefractive" Cu [0.015 mass %] and "nonphotorefractive" Zn [0.5 mass %] cations. For the first time it is found that single crystals doped with "photorefractive" and "nonphotorefractive" cations have different indicatrices for photorefractive light scattering. The aperture angle for photorefractive scattering reaches its steady state value more rapidly with high laser powers than with low. However, at high powers laser induced heating of the crystal is greater, and this leads to a narrowing of the scattering indicatrix. It is also found that photorefractive scattering in these single crystals depends on the region of the boule from which a sample has been cut. This indicates that there is a nonuniform distribution over the boule of the imperfections with localized electrons which determine the magnitude of the photorefractive effect.     

PLD and RF-PLD synthesis of Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript> ferroelectric thin films for electrically controlled devices

Ba_0.6Sr_0.4TiO₃ (BST) bulk ceramic synthesized by solid state reaction was used as target for thin films grown by pulsed laser deposition (PLD) and radiofrequency beam assisted PLD (RF-PLD). The X-ray diffraction patterns indicate that the films exhibit a polycrystalline cubic structure with a distorted unit cell. Scanning Electron Microscopy investigations showed a columnar microstructure with size of spherical grains up to 150 nm. The capacitance–voltage (C–V) characteristics of the BST films were performed by applying a DC voltage up to 5 V. A value of 280 for dielectric constant and 12.5% electrical tunability of the BST capacitor have been measured at room temperature.     

Photoaccumulating film systems based on TiO<Subscript>2</Subscript>/MoO<Subscript>3</Subscript> and TiO<Subscript>2</Subscript>/MoO<Subscript>3</Subscript>:V<Subscript>2</Subscript>O<Subscript>5</Subscript> nanoheterostructures

The thin-film photocatalysts TiO₂/MoO₃ and TiO₂/MoO₃:V₂O₅ obtained by a combination of sol–gel and sintering techniques were studied using the photooxidation of probing dyes, EPR spectroscopy, X-ray diffraction analysis, and electron microscopy. It was shown that due to charge accumulation caused by UV irradiation, these photocatalysts retain their oxidative activity and ability for self-sterilization in the dark for a long time after irradiation was terminated (up to 5 h for TiO₂/MoO₃:V₂O₅).     

Phase transition behavior of highly (100) textured sol-gel-derived Ba<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript> thin films

We have investigated the relations between microstructure and dielectric properties in order to fabricate sol-gel-derived highly (100) oriented Ba_0.5Sr_0.5TiO₃ (BST 50/50) thin films with properties comparable to those of the bulk material. For the first time, we were able to fabricate BST thin films which exhibited the orthorhombic-to-tetragonal transition in addition to the commonly observed tetragonal-to-cubic transition. We were successful in explaining the commonly observed degradation of the dielectric behavior of BST thin films, when compared to that of the bulk material, in terms of grain size, compositional inhomogeneity (measured in terms of Sr/Ba ratio) between the grain bulk and grain boundary, and mechanical stresses. PACS 77.55.+f; 77.22Gm; 77.80.Bh; 77.80.Dj     

Effects of BaTiO<Subscript>3</Subscript> and SrTiO<Subscript>3</Subscript> as the buffer layers of epitaxial BiFeO<Subscript>3</Subscript> thin films

BiFeO₃ (BFO) thin films with BaTiO₃ (BTO) or SrTiO₃ (STO) as buffer layer were epitaxially grown on SrRuO₃-covered SrTiO₃ substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain in the BFO films, whereas the STO buffer causes compressive strain. Different ferroelectric domain structures caused by these two strain statuses are revealed by piezoelectric force microscopy. Electrical and magnetical measurements show that the tensile-strained BFO/BTO samples have reduced leakage current and large ferroelectric polarization and magnetization, compared with compressively strained BFO/STO. These results demonstrate that the electrical and magnetical properties of BFO thin films can be artificially modified by using a buffer layer.     

Effects of thickness on the infrared optical properties of Ba<Subscript>0.9</Subscript>Sr<Subscript>0.1</Subscript>TiO<Subscript>3</Subscript> ferroelectric thin films

Using infrared spectroscopic ellipsometry (IRSE), the optical properties of the Ba_0.9Sr_0.1TiO₃ (BST) ferroelectric thin films with different film thicknesses on Pt/Ti/SiO₂/Si substrates prepared by a modified sol-gel method have been investigated in the 2.5–12.6 m wavelength range. By fitting the measured ellipsometric parameter ( and ) data with a three-phase model (Air/BST/Pt) and the classical dispersion relation for the BST thin films, the optical constants and thicknesses of the thin films have been obtained. The average thickness of the single layer decreases with increasing film thickness. The refractive index of the BST films decreases with increasing thickness in the wavelength range 2.5–11 m, and increases with increasing thickness in the wavelength range 11–12.6 m. However, the extinction coefficient of the BST films monotonously decreases with increasing thickness. It is closely associated with the crystallinity of the thin films, the crystalline size effect and the influence of the interface layer. The absorption coefficient of the BST films with different thicknesses decreases with increasing thickness. PACS 77.55.+f; 78.20.Ci; 78.30.Am; 81.70.Fy; 81.40.Tv     

Properties of thermally fixed holograms in photorefractive LiNbO<Subscript>3</Subscript>:Zn:Fe crystals

We have investigated the properties of thermally fixed holograms in LiNbO₃ crystals doped with the optical damage inhibitor Zn as well as the photorefractive Fe dopants. Time decays of fixed holograms at different temperatures showed a single thermally activated process with an activation energy of ∼1.08 eV. We have also studied the effect of an external electric field on the diffraction efficiency of these holograms. Results analysis has provided a new method to determine the photovoltaic field of the samples as well as the effective concentration of photorefractive traps.     

Manganese doping effects on interband electronic transitions,lattice vibrations,and dielectric functions of perovskite-type Ba<Subscript>0.4</Subscript>Sr<Subscript>0.6</Subscript>TiO<Subscript>3</Subscript> ferroelectric ceramics

The Ba_0.4Sr_0.6−x Mn _x TiO₃ (BSMT) ceramics with different Mn composition (from 1% to 10%) have been prepared via the conventional solid-state reaction sintering. The X-ray diffraction analysis shows that the ceramics are polycrystalline with the single perovskite phase. The lattice vibrations and optical properties have been investigated using Raman scattering, spectroscopic ellipsometry (SE), and infrared reflectance spectra. It was found that the optical bandgap for the BSMT ceramics is varied between 3.40 and 3.65 eV. The three first-order Raman-active phonon modes can be observed, and the frequency of the A ₁(LO₃)/E(LO) mode shows a blue shift of 8 cm⁻¹ with the Mn composition, which can be attributed to the distortion of the TiO₆ octahedron. With increasing Mn composition, the frequency of the infrared-active TO₄ mode decreases from 532 to 520 cm⁻¹, owing to the local variation of the lattice constant induced by the Mn incorporation. Moreover, the optical functions of the ceramics from the far-infrared to ultraviolet region are obtained based on the SE and reflectance spectra, which is useful for the potential applications in ferroelectric-based optoelectronic devices.     

Electron transfer in the structure of a photorefractive doped Bi<Subscript>12</Subscript>TiO<Subscript>20</Subscript>: Ru crystal

The ac conductivity of Bi₁₂TiO₂₀: Ru crystals has been studied in the frequency range 10²–10⁶ Hz and at temperatures 293–773 K. The experimental data have been analyzed in the framework of the model of correlated barrier hops. In this material, the potential barriers are due to the existence of a block structure, crystal lattice defects, and also the presence of a ruthenium impurity. The microparameters characterizing the charge transfer in doped bismuth titanate single crystals have been determined.     

High-temperature complex impedance and modulus spectroscopic studies of doped Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-BaTiO<Subscript>3</Subscript> ferroelectric ceramics

Lead-free Na_0.5Bi_0.5TiO₃ (NBT) and (1 ? x)Na_0.5Bi_0.5TiO₃ + xBaTiO₃ with x = 0.1 and 0.2 (where x = 0.1 and 0.2 are named as NBT1 and NBT2, respectively), (1 ? y)Na_0.5Bi_0.5TiO₃ + yBa_0.925Nd_0.05TiO₃ with y = 0.1 and 0.2 (where y = 0.1 and 0.2 are named as NBT3 and NBT4, respectively)-based relaxor ferroelectric ceramics were prepared using the sol-gel method. The crystal structure was investigated by X-ray diffraction (XRD) at room temperature (RT). The XRD patterns confirmed the presence of the rhombohedral phase in all the samples. The electrical properties of the present NBT-based samples were investigated by complex impedance and the modulus spectroscopy technique in the temperature range of RT–600 °C. The AC conductivity was found to increase with the substitution of Ba²⁺ ions to the NBT sample whereas it significantly decreased with the addition of Nd³⁺ ions. The more anion vacancies in Ba-added samples and the lower anion vacancies in Nd-added samples were found to be responsible for higher and lower conductivities, respectively.