A simple extended cavity diode laser for spectroscopy around 640 nm

We report on an extended cavity diode laser for operation near 640 nm. The laser is continuously tunable in 10 GHz ranges with a maximum output power of 3 mW. The laser system has been constructed using off-the-shelf optoelectronic components and easily machinable mechanical parts. The constructed system has been used to study the saturated absorption of the closed 1s₅–2p₉ neon transition in a radio-frequency discharge that can be maintained at neon pressures down to 10⁻² Pa.     

External cavity diode laser with kilohertz linewidth by a monolithic folded Fabry-Perot cavity optical feedback

We present a extended-cavity diode laser (ECDL) with kilohertz linewidth by optical feedback from a monolithic folded Fabry-Perot cavity (MFC). In our experiments, an MFC replaces the retroreflecting mirror in the traditional ECDL configuration. Beat-note measurements between this MFC-ECDL and a narrow-linewidth reference laser are performed and demonstrate that the linewidth of this MFC-ECDL is about 6.8 kHz. Phase locking of this MFC-ECDL to the reference laser is achieved with a unity gain as small as 10.2 kHz.     

A 657-nm narrow bandwidth interference filter-stabilized diode laser

We present a 657-nm external cavity diode laser (ECDL) system,where the output frequency is stabilized by a narrow-band high transmission interference filter.This novel diode laser system emits laser with an instantaneous linewidth of 7 kHz and a broadened linewidth of 432 kHz.     

窄线宽、高光束质量的外腔双反馈激光二极管阵列

设计了一种离轴双反馈外腔能够有效地改善激光二极管阵列的线宽和光束质量。闪耀光栅和高反镜之间形成了一个共振腔。通过调整光栅和高反镜之间的倾角可以选定一个空间模在共振腔中放大。将一个半波片插入外腔中的光栅反馈支路,来控制反馈光的数量,激光从光栅反馈支路输出。运用这项技术,在工作电流16 A,可以把激光二极管阵列的输出线宽压缩到0.15 nm,光束束宽积减小到283 mm·mrad。由于光栅的锁定作用,中心波长几乎不随温度的变化而改变。在工作电流17 A时,输出激光的功率为2.44 W,斜率效率为0.5 W/A。     

External cavity diode laser as a stable-frequency light source for application in laser cooling of molecules

We demonstrate a scheme to use a Littman configuration external cavity diode laser(ECDL) as a stablefrequency light source to stabilize two cw single-mode Ti:sapphire lasers for laser cooling of magnesium fluoride molecules. An ECDL based on the Littman configuration is constructed and stabilized by a digital signal processor system. We stabilize the frequency of our ECDL to 0.77 MHz precision over 10 h and the Allan standard deviation reaches 2.6 × 10-11 at an integration time of 10 s. We lock two Ti:sapphire lasers through a transfer cavity, and either laser has a long-term frequency stability of 2.5 MHz.     

243 nm稳频窄线宽半导体激光器

243 nm是氢原子1S-2S能级跃迁光谱波长. 本文利用Pound-Drever-Hall稳频技术将972 nm光栅反馈外腔半导体激光稳定在一个高精细度低膨胀系数的超稳法布里-珀罗腔上, 通过锥形放大器放大和腔内两次共振增强倍频得到243 nm激光, 最终实现用于探测氢原子1S-2S双光子跃迁的243 nm窄线宽激光.     

高功率、高效率808nm半导体激光器阵列

通过设计高效率808 nm非对称宽波导外延结构,减少P型波导层和包层的自由载流子光吸收,实现腔内光吸收损耗为0.63 cm~(-1).制备的808 nm半导体激光器阵列在室温25?C下,实现驱动电流135 A,工作电压1.76 V,连续输出功率大于150 W,斜率效率高达1.25 W/A,中心波长809.3 nm,器件最高电光转换效率为65.5%,这是目前国内报道的808 nm半导体激光器阵列的最高电光转换效率,达到国际同类器件最好水平.     

0.02 nm带宽近衍射极限输出的双外腔反馈半导体激光器

实验研究了宽接触条形双外腔反馈半导体激光器,在该激光器的输出表面镀增透膜,反馈是由高反射率平面镜和闪耀光栅组成,通过调整平面镜和光栅的倾斜角度,使得特定的空间模式和纵模注入半导体激光器,使之产生振荡,并抑制了激光腔内振荡的其他横模和纵模数,从而输出单瓣近衍射极限的激光束。同时在腔内插入标准具,使得输出激光线宽达到0.02 nm,输出功率在150 mW。输出光束的光束质量因子M2为1.16。     

切削用量对铝靶表面质量的影响

采用单点金刚石切削技术，完成了对ICF实验用铝靶的切削加工，重点研究了切削用量对加工表面质量的影响。实验结果表明:采用较小的进给速度，较大的主轴转速能够获得较低的表面粗糙度，切削深度对表面质量影响较小。通过Form Talysurf 表面轮廓仪测量，结果表明表面粗糙度小于50 nm。     

Efficient CW Yb:YAG laser at 1048 nm under 968 nm diode laser pumping

We describe the output performances of the 1048 nm transition in Yb:YAG under in-band pumping with diode laser at the 968 nm wavelength. An end-pumped Yb:YAG crystal yielded 787 mW of continuous-wave (CW) output power for 9.1 W of absorbed pump power. Furthermore, 104 mW 524 nm green light was acquired by frequency doubling. Comparative results obtained for the pump with diode laser at 940 nm are given in order to prove the advantages of the in-band pumping.     

Frequency doubled diode laser in alternative extended cavity

We report on an alternative extended cavity scheme used with a 180 mW quantum well GaAlAs diode laser, operating near 850 nm. A dispersing prism and a thin glass plate are employed to enforce stable single-mode operation in the strong feedback regime, with no need for laser AR coatings. Compared to other configurations where a grating is used, the lower loss in the extended cavity allows higher fundamental power available for second harmonic generation. For example, by frequency doubling using potassium niobate in a power enhancement cavity, enough power can be generated from a single diode laser to decelerate and trap calcium atoms with radiation at 423 nm.     

Efficient quasi-three-level Nd:YAG laser at 946 nm pumped by a tunable external cavity tapered diode laser

Using a tunable external cavity tapered diode laser (ECDL) pumped quasi-three-level Nd:YAG laser, a fivefold reduction in threshold and twofold increase in slope efficiency is demonstrated when compared to a traditional broad area diode laser pump source. A TEM₀₀ power of 800 mW with 65% slope efficiency is obtained, the highest reported TEM₀₀ power from any 946 nm Nd:YAG laser pumped by a single emitter diode laser pump source. A quantum efficiency of 0.85 has been estimated from experimental data using a simple quasi-three-level model. The reported value is in good agreement with published values, suggesting that the model is adequate. Improvement of the 946 nm laser due to the ECDL's narrow spectrum proves to be less significant when compared to its spatial quality, inferring a broad spectrum tapered diode laser pump source may be most practical. Experimental confirmation of such setup is given.     

External cavity coherent quantum cascade laser array

We report on the development of a coherent quantum cascade laser array that consists in the fabrication of multi-stripes array. The main characteristic of this kind of source is that an anti-symmetrical signature with two lobes is obtained in the far field. Taking advantage of this drawback, a grating is aligned with one lobe of the source. Thus a Littrow configuration is designed that permit to obtain a wide tunability of the source. First results are presented and a preliminary test of the source is realized by measurements on acetone.     

808 nm高占空比大功率半导体激光器阵列

采用渐变折射率分别限制单量子阱宽波导结构,通过降低非辐射复合、有源层载流子泄露、散射和吸收损耗来提高出射效率和降低激光阈值电流,从而提高半导体激光器阵列的输出功率;同时使P面具有更高的粒子掺杂数密度,优化N面合金条件,降低半导体激光器的串联电阻,降低焦耳热,提高了半导体激光器阵列的转换效率。利用金属有机化学气相淀积技术生长GaInAsP/InGaP/AlGaAs渐变折射率分别限制单量子阱宽波导结构激光器材料,利用该材料制成半导体激光线阵列在20%高占空比的输入电流下,半导体激光器的输出峰值功率达到189.64 W(180 A),斜率效率为1.1 W/A,中心波长为805.0 nm,阈值电流为7.6 A,电光转换效率最高可达55.4%;在1%占空比的输入电流下,阵列的输出峰值功率可达324.9 W(300 A),斜率效率为1.11 W/A,阈值电流为7.8 A,电光转化效率最高达55.6%,中心波长为804.5 nm。     

Reliable high-efficiency high-brightness laser diode bars at 940 nm

High-quality InGaAs/AlGaAs laser diode bars emitting at 940 nm have been fabricated by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Two hundred and ten Watts maximum continuous-wave output power and a maximum power conversion efficiency of 60% at an output power of 72 W have been demonstrated for a single 1-cm-wide laser bar. These bars exhibit a very good beam quality of 5.7°×27.2° (full-width at half-maximum). Reliability test have been carried out for over 2000 h at 58 W at room temperature. Under these conditions, the extrapolated lifetime is 100,000 h, which suggests that AlGaAs-based lasers of proper designs could have similar long-term reliability as their Al-free counterpart.     

External cavity diode lasers with E-beam written silicon diffraction gratings

Performance of external cavity diode lasers with silicon gratings produced by E-beam writing and subsequent reactive ion etching is described. Optical amplifiers used in the experiments were based on single quantum well heterostructures grown by molecular beam epitaxy. The lasers were set up in the Littrow configuration and have been designed to allow for wavelength tuning in the range centred at 960 nm.     

808 nm大功率半导体激光器阵列的优化设计

 采用激射波长为808 nm的GaAs/AlGaAs梯度折射率波导分别限制单量子阱结构外延片,制备了沟道深度不同的半导体激光器阵列,并对载流子分布进行理论分析和模拟。理论和实验结果表明：引入脊形台面和隔离沟道后,激光器阵列的输出功率、电光转换效率、斜率效率和光谱特性均有显著提高。随着沟道的加深,对电流侧向扩散的限制作用增强,从而提高了阵列性能。     

808 nm大功率半导体激光器阵列的优化设计

采用激射波长为808 nm的GaAs/AlGaAs梯度折射率波导分别限制单量子阱结构外延片,制备了沟道深度不同的半导体激光器阵列,并对载流子分布进行理论分析和模拟。理论和实验结果表明：引入脊形台面和隔离沟道后,激光器阵列的输出功率、电光转换效率、斜率效率和光谱特性均有显著提高。随着沟道的加深,对电流侧向扩散的限制作用增强,从而提高了阵列性能。     

Grating feedback in a 810 nm broad-area diode laser

Narrow linewidth, single spectral mode operation has been obtained in a high power, 810 nm broad-area diode laser in an extended cavity configuration with a grating as external reflector (grating feedback). For stable operation it was necessary to misalign the feedback slightly in the plane of the laser junction. Characteristics of the thus obtained laser system are a linewidth below 5 MHz, an output intensity of about 50% of the free running power, a large-scale tuning range of 15 nm and continuous scanning over 4 GHz. In the spatial domain, the laser remains multimode and astigmatic. To show the practical applicability of this system, saturated absorption of a krypton line is demonstrated.