Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor (HEMT) grown by metal organic chemical vapour deposition (MOCVD). The gate length of the metamorphic HEMT was 150~nm, the maximum current density was 330~mA/mm, the maximum transconductance was 470~mS/mm, the threshold voltage was -0.6~V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102~GHz and 450~GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400~GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.     

Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility tran-sistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ω- mm. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6. Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.     

Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors

A new multilayer-structured AlN/AlCaN/CaN heterostructure high-electron-mobility transistor （HEMT） is demonstrated. The AIN/AlCaN/CaN HEMT exhibits the maximum drain current density of 800mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AIN/AlGaN/CaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 CHz and 29.0 GHz, respectively.     

Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs

We fabricated a set of symmetric gate-recess devices with gate length of 70 nm.We kept the source-to-drain spacing(L_SD)unchanged,and obtained a group of devices with gate-recess length(L_recess)from 0.4μm to 0.8μm through process improvement.In order to suppress the influence of the kink effect,we have done SiN_X passivation treatment.The maximum saturation current density(ID_max)and maximum transconductance(g_m,max)increase as L_recess decreases to 0.4μm.At this time,the device shows ID_max=749.6 mA/mm at V_GS=0.2 V,V_DS=1.5 V,and g_m,max=1111 mS/mm at V_GS=?0.35 V,V_DS=1.5 V.Meanwhile,as L_recess increases,it causes parasitic capacitance C_gd and g_d to decrease,making f_max drastically increases.When L_recess=0.8μm,the device shows f_T=188 GHz and f_max=1112 GHz.     

Laser induced damage threshold testing of DUV optical substrates

Laser induced damage threshold （LIDT） testing is the effective methods to research the lifetime of optical elements. According to ISO 11254 standards, a LIDT testing system of ArF excimer laser is established. The laser beam size on the sample surface can be varied from 0.3 to 0.6 mm in diameter. The maximum laser energy density is larger than 4.5 J/cm2. Besides the Nomarski microscope, He-Ne scattering is used and demonstrated as an effective and reliable method for the on-line monitoring of laser damage. The uncertainty of LIDT results and the main effecting factors are analyzed. The laser induced damage of fused silica substrates with different absorptions and CaF2 substrates with different absorptions are investigated in 1-on-1 mode, respectively. The roles of absorption on the LIDT results of the two kind substrates are discussed.     

Multi-objective optimization of gradient coil for benchtop magnetic resonance imaging system with high-resolution

Significant high magnetic gradient field strength is essential to obtaining high-resolution images in a benchtop mag- netic resonance imaging （BT-MRI） system with permanent magnet. Extending minimum wire spacing and maximum wire width of gradient coils is one of the key solutions to minimize the maximum current density so as to reduce the local heating and generate higher magnetic field gradient strength. However, maximum current density is hard to optimize together with field linearity, stored magnetic energy, and power dissipation by the traditional target field method. In this paper, a new multi-objective method is proposed to optimize the maximum current density, field linearity, stored magnetic energy, and power dissipation in MRI gradient coils. The simulation and experimental results show that the minimum wire spacings are improved by 159% and 62% for the transverse and longitudinal gradient coil respectively. The maximum wire width increases from 0.5 mm to 1.5 mm. Maximum gradient field strengths of 157 mT/m and 405 mT/m for transverse and lon- gitudinal coil are achieved, respectively. The experimental results in BT-MRI instrument demonstrate that the MRI images with in-plane resolution of 50 ~tm can be obtained by using the designed coils.     

Comparison of ITG and TEM Microturbulence in DⅢ-D Tokamak

Microturbulence excited by ion temperature gradient(ITG)-dominant and trapped electron mode(TEM)-dominant instabilities is compared in the fusion plasmas using gyrokinetic simulations based on the realistic equilibrium data from DⅢ-D discharges.Collisions make a difference between two plasmas and give rise to similar results to those found in previous research experiments[Chin.Phys.Lett.35(2018)105201].The mode structures and frequency spectrum of the most unstable modes characterized by the ITG-dominant and TEM-dominant instabilities are excited in the lower and higher T. plasmas in the linear simulations.In the nonlinear simulations,contour plots of the perturbed potential are shown in the saturated stage,with the radial correlation lengths being microscopic on the order of the ion thermal gyroradius ρi in both the ITG and the TEM microturbulences.The dominant mode wavelengths of the perturbed potential increase when evolving from linear to nonlinear stages in both simulations, with the fluctuation energy spreading from the linearly dominant modes to the nonlinearly dominant modes.The radial correlation lengths are about 4ρi and the electron density fluctuation intensities are about 0.85% in the nonlinear saturated stage,which are in agreement with the experimental results.     

Optimization of the Monopole Acoustic Transducer for Logging-while-Drilling

A new design idea for a monopole acoustic transducer which increases the frequency band and improves electromechanical performance is proposed with a focus on the lowest order of the radial and flexural modes. Numerical modeling of the resonance frequencies and electrical conductance are conducted with respect to the dimensions and material parameters of the proposed transducer. The transmitting voltage response level with respect to the density and velocity of the fluid media is calculated. The numerical simulation is validated through experiments. The frequency band and the electromechanical performance of the monopole acoustic transducer can be optimized by the g~ven methods concluded from the numerical results.     

High-performance evanescently-coupled uni-traveling-carrier photodiodes

A new evanescently-coupled uni-traveling-carrier photodiode (EC-UTC PD) based on a multimode diluted waveguide (MDW) structure is fabricated, analysed and characterized. Optical and electrical characteristics of the device are investigated. The excellent characteristics are demonstrated such as a responsivity of 0.36~A/W, a bandwidth of 11.5~GHz and a small-signal 1-dB compression current greater than 18~mA at 10~GHz. The saturation current is significantly improved compared with those of similar evanescently-coupled pin photodiodes. The radio frequency (RF) bandwidth can be further improved by eliminating RF losses induced by the cables, the probe and the bias tee between the photodiode and the spectrum analyzer.     

Effects of self-fields on electron trajectory and gain in two-stream electromagnetically pumped free-electron laser with ion channel guiding

A theory for the two-stream free-electron laser with an electromagnetic wiggler (EMW) and an ion channel guiding is developed.In the analysis,the effects of self-fields have been taken into account.The electron trajectories and the small signal gain are derived.The stability of the trajectories,the characteristics of the linear gain and the normalized maximum gain are studied numerically.The dependence of the normalized frequency ω corresponding to the maximum gain on the ion-channel frequency is presented.The results show that there are seven groups of orbits in the presence of the self-fields,which are similar to those reported in the absence of the self-fields.It is also shown that the normalized gains of 2 groups decrease while the rest increase with the increasing normalized ion-channel frequency.Furthermore,it is found that the two-stream instability and the self-field lead to a decrease in the maximum gain except for group 4.     

Theoretical calculation and experiment of microwave electromagnetic property of Ni(C) nanocapsules

With the combination of the dielectric loss of the carbon layer with the magnetic loss of the ferromagnetic metal core,carbon-coated nickel Ni(C) nanoparticles are expected to be the promising microwave absorbers. Microwave electromagnetic parameters and reflection loss in a frequency range of 2 GHz–18 GHz for paraffin-Ni(C) composites are investigated.The values of relative complex permittivity and permeability, the dielectric and magnetic loss tangent of paraffin-Ni(C) composites are measured, respectively, when the weight ratios of Ni(C) nanoparticles are equal to 10 wt%, 40 wt%, 50 wt%,70 wt%, and 80 wt% in paraffin-Ni(C) composites. The results reveal that Ni(C) nanoparticles exhibit a peak of magnetic loss at about 13 GHz, suggesting that magnetic loss and a natural resonance could be found at that frequency. Based on the measured complex permittivity and permeability, the reflection losses of paraffin-Ni(C) composites with different weight ratios of Ni(C) nanoparticles and coating thickness values are simulated according to the transmission line theory. An excellent microwave absorption is obtained. To be proved by the experimental results, the reflection loss of composite with a coating thickness of 2 mm is measured by the Arch method. The results indicate that the maximum reflection loss reaches-26.73 d B at 12.7 GHz, and below-10 d B, the bandwidth is about 4 GHz. The fact that the measured absorption position is consistent with the calculated results suggests that a good electromagnetic match and a strong microwave absorption can be established in Ni(C) nanoparticles. The excellent Ni(C) microwave absorber is prepared by choosing an optimum layer number and the weight ratio of Ni(C) nanoparticles in paraffin-Ni(C) composites.     

Radio-Frequency Performance of Epitaxial Graphene Field-Effect Transistors on Sapphire Substrates

We report dc and the first-ever measured small signal rf performance of epitaxial graphene field-effect transistors （GFETs）, where the epitaxial graphene is grown by chemical vapor deposition （CVD） on a 2-inch c-plane sapphire substrate. Our epitaxial graphene material has a good flatness and uniformity due to the low carbon concentration during the graphene growth. With a gate length Lg = 100 nm, the maximum drain source current Ids and peak transconductance gm reach 0.92 A/mm and 0.143 S/mm, respectively, which are the highest results reported for GFETs directly grown on sapphire. The extrinsic cutoff frequency （fT） and maximum oscillation frequency （fmax） of the device are 12 GHz and 9.5 GHz, and up to 32 GHz and 21.5 GHz after de-embedding, respectively. Our work proves that epitaxial graphene on sapphire substrates is a promising candidate for rf electronics.     

Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high- electron-mobility transistor

AlGaN/GaN depletion-mode high-electron-mobility transistor(D-HEMT) and fluorine(F) plasma treated enhancement-mode high-electron-mobility transistor(E-HEMT) are exposed to 60Co gamma radiation with a dose of 1.6 Mrad(Si).No degradation is observed in the performance of D-HEMT.However,the maximum transconductance of E-HEMT is increased after radiation.The 2DEG density and the mobility are calculated from the results of capacitance-voltage measurement.The electron mobility decreases after fluorine plasma treatment and recovers after radiation.Conductance measurements in a frequency range from 10 kHz to 1 MHz are used to characterize the trapping effects in the devices.A new type of trap is observed in the F plasma treated E-HEMT compared with the D-HEMT,but the density of the trap decreases by radiation.Fitting of G p /ω data yields the trap densities D T =(1-3) × 10 12 cm-2 · eV-1 and D T =(0.2 0.8) × 10 12 cm-2 ·eV-1 before and after radiation,respectively.The time constant is 0.5 ms-6 ms.With F plasma treatment,the trap is introduced by etch damage and degrades the electronic mobility.After 60Co gamma radiation,the etch damage decreases and the electron mobility is improved.The gamma radiation can recover the etch damage caused by F plasma treatment.     

High efficiency ETM-free perovskite cell composed of CuSCN and increasing gradient CH3NH3PbI3

To enhance device performance and reduce fabrication cost,a series of electron transporting material(ETM)-free perovskite solar cells(PSCs)is developed by TCAD Atlas.The accuracy of the physical mode of PSCs is verified,due to the simulations of PEDOT:PSS-CH₃NH₃PbI₃-PCBM and CuSCN-CH₃NH₃PbI₃-PCBM p-i-n PSCs showing a good agreement with experimental results.Different hole transporting materials(HTMs)are selected and directly combined with n-CH₃NH₃PbI₃,and the CuSCN-CH₃NH₃PbI₃ is the best in these ETM-free PSCs.To further study the CuSCN-CH₃NH₃PbI₃ PSC,the influences of back electrode material,gradient band gap,thickness,doping concentration,and bulk defect density on the performance are investigated.Energy band and distribution of electric field are utilized to optimize the design.As a result,the efficiency of CuSCN-CH₃NH₃PbI₃ PSC is achieved to be 26.64%.This study provides the guideline for designing and improving the performances of ETM-free PSCs.     

Investigation of transfer ionization in collisions of partially stripped carbon ions with helium at low to intermediate velocities

The ratios of transfer ionization (TI) to single-electron capture (SC) cross sections have been measured for the collisions of partially stripped C^q+ ions (q=1--4) with He. The collision velocity ranges from 0.7 to 4.4v₀ (v₀ is the Bohr velocity). The projectile-ion and recoil-ion coincidence technique is used to separate the processes of TI and SC. The ratios reach the maximum when the velocity is about 3.7v₀ This can be explained qualitatively based on the two-step mechanism. The experimental results are also compared with the results calculated using the classical trajectory Monte Carlo (CTMC) method. The CTMC results are in agreement with the experimental data basically. The discrepancies in higher velocity region are interpreted by the effective charge effect.     

Electronic structure of twinned ZnS nanowires

The electronic properties of twinned ZnS nanowires (NWs) with different diameters were investigated based on first-principles calculations. The energy band structures, projected density of states and the spatial distributions of the bottom of conduction band and the top of the valence band were presented. The results show that the twinned nanowires exhibit a semiconducting character and the band gap decreases with increasing nanowire diameter due to quantum confinement effects. The valence band maximum and conduction band minimum originate mainly from the S-p and Zn-s orbitals at the core of the nanowires, respectively, which was confirmed by their spatial charge density distribution. We also found that no heterostructure is formed in the twinned ZnS NWs since the valence band maximum and conduction band minimum states are distributed along the NW axis uniformly. We suggest that the hexagonal (2H) stacking inside the cubic (3C) stacking has no effect on the electronic properties of thin ZnS NWs.     

Spectral broadening induced by intense ultra-short pulse in 4H–SiC crystals

We report the observation of spectral broadening induced by 200 femtosecond laser pulses with the repetition rate of 1 kHz at the wavelength of 532 nm in semi-insulating 4H–SiC single crystals.It is demonstrated that the full width at half maximum of output spectrum increases linearly with the light propagation length and the peak power density,reaching a maximum 870 cm~(-1)on a crystal of 19 mm long under an incident laser with a peak power density of 60.1 GW/cm~2.Such spectral broadening can be well explained by the self-phase modulation model which correlates time-dependent phase change of pulses to intensity-dependent refractive index.The nonlinear refractive index n_2 is estimated to be1.88×10~(-15)cm~2/W.The intensity-dependent refractive index is probably due to both the nonlinear optical polarizability of the bound electrons and the increase of free electrons induced by the two-photon absorption process.Super continuum spectra could arise as crystals are long enough to induce the self-focusing effect.The results show that SiC crystals may find applications in spectral broadening of high power lasers.     

Control of period-one oscillation for all-optical clock division and clock recovery by optical pulse injection driven semiconductor laser

The period-one oscillation produced by an external optical pulse injection driven semiconductor laser is applied to clock recovery and frequency division. By adjusting the repetition rate or injection power of the external injection optical pulses to lock the different harmonic frequencies of the period-one state, the clock recovery and the frequency division （the second and third frequency divisions） are achieved experimentally. In addition, in frequency locking ranges of 2 GHz and 1.9 GHz, the second and third frequency divisions are obtained with the phase noise lower than 100 dBc/Hz, respectively. Our experimental results are consistent well with the numerical simulations.     

Direct Numerical Simulation of Three-Dimensional Richtmyer--Meshkov Instability

Direct numerical simulation （DNS） is used to study flow characteristics after interaction of a planar shock with a spherical media interface in each side of which the density is different. This interracial instability is known as the Richtmyer-Meshkov （R-M） instability. The compressible Navier-Stoke equations are discretized with group velocity control （GVC） modified fourth order accurate compact difference scheme. Three-dimensional numerical simulations are performed for R-M instability installed passing a shock through a spherical interface. Based on numerical results the characteristics of 3D R-M instability are analysed. The evaluation for distortion of the interface, the deformation of the incident shock wave and effects of refraction, reflection and diffraction are presented. The effects of the interracial instability on produced vorticity and mixing is discussed.     

Competition between Radiative Power and Dissipation Power in the Refrigeration Process in Oxide Multifilms

The maximum refrigeration power dependence on the doping density in the p-BaTiO3/BaTiO3/SrTiO3/BaTiO3/ n-BaTiO3 system and in the p-AlGaAs/AlGaAs/GaAs/AlGaAs/n-AlGaAs system is obtained respectively based on the opto-thermionic refrigeration model. The results show that the maximum refrigeration power in the p-BaTiO3/BaTiO3/SrTiO3/BaTiO3/n-BaTiO3 system increases dramatically with the increase of doping density from 1.0×1018 cm-3 to 5.0×1019 cm-3 while that in the p-AlGaAs/AlGaAs/GaAs/AlGaAs/n-AlGaAs system is nearly a constant. It is found that the different Auger coefficients and the competition between radiative power and dissipation power lead to the different behavior of the maximum refrigeration power dependence on the doping density of the two systems.