Passively Q-Switched Nd：KLuW Laser with Semiconductor Saturable Absorber

We demonstrate a passively Q-switched Nd：KLu W laser with a semiconductor sat urable absorber mirror （SESAM） at wavelength 1070 nm. At a pump power of 1.3 W, the pulse width is measured to be about 17ns with repetition rate of lOkHz and with the average output power of 260roW. To our knowledge, this is the first demonstration of Nd：KLuW used for passively Q-switched laser with an SESAM.     

Antiphase State in Passively Q-Switched Yb：YAG Microchip Lasers with a Nd,Cr：YAG as Saturable Absorber

We experimentally investigate the antiphase dynamics phenomenon that occurs in a diode-pumped passively Q-switched Yb:YAG multimode laser with a Nd,Cr:YAG saturable absorber. Due to the effect of spatial hole burning, the multimode lasers with one, two, or three modes at different pump power are observed, and the pulses sequences display classic antiphase dynamics.     

Diode-Pumped Quasi-Three-Level Passively Q-Switched Nd：GGG Laser with a Codoped Nd,Cr：YAG Saturable Absorber

We demonstrate the first quasi-three-level passively Q-switched Nd：GGG laser at 937nm using a Nd, Cr：YAG crystal as the saturable absorber. The dependences of the average output power, the repetition rate and the pulse width on the incident pump power are obtained. A maximum average output power of 1.18 W with repetition rate of 35kHz and pulse width of 45ns is achieved at an incident pump power of 18.3 W. The corresponding optical-to-optical and slope efficiencies are 6% and 10%, respectively.     

Diode-Pumped Passively Q-Switched Yb：YAG Microchip Laser with a GaAs as Saturable Absorber

A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4μJ 52ns pulses at 1030nm with a pulse repetition rate of 7.8 kHz in a TEM00-mode.     

Passively Q-Switched Tm,Ho：YVO4 Laser with Cr：ZnS Saturable Absorber at 2 μm

A stable diode-pumped passively Q-switched Tm,Ho：YVO4 laser with Cr：ZnS saturable absorber is reported. The shortest pulse duration of -500 ns with the central wavelength of 2041 nm is obtained at the pump power of 7.4 W, corresponding to the pulse energy of 3.5 μd at repetition rate of 65 kHz.     

Diode-Pumped Passive Q-Switched 946 nm Nd：YAG Laser with a GaAs Saturable Absorber

We report, for the first time to our knowledge, a diode-pumped passive Q-switched 946nm Nd：YAG laser by using a GaAs as saturable absorber. The maximum average output power is 1.24 W at an incident pump power of 15 W, corresponding to a slope efficiency of 10%. Laser pulses with pulse duration of 70ns and repetition rate of 330 kHz are generated.     

Passively Q-Switched Yb-Doped Fiber Laser Operating at 1.06μm with Two-Dimensional Silver Nanoplate as Saturable Absorber

A two-dimensional silver nanoplate is prepared with the seed-mediated growth method and is used for achieving pulse fiber laser operation. By controlling the dimension parameters of the silver nanoplate, the surface plasmon resonance absorption peak of the material is successfully adjusted to 1068 nm. Based on the silver nanoplate as a saturable absorber, a passively Q-switched Yb-doped fiber laser operating at 1062 nm is demonstrated. The maximum average output power of 3.49 mW is obtained with a minimum pulse width of 1.84 ps at a pulse repetition rate of 65.7 kHz, and the corresponding pulse energy and peak power are 53.1 nJ and 28.8 mW, respectively.     

Diode-Pumped Self-Starting Mode-Locked Nd：YVO4 Laser with Semiconductor Saturable Absorber Output Coupler

By using a semiconductor saturable-absorber output coupler as a mode-locking device, we experimentally realized the operation of a diode-pumped passively mode-locked Nd:YVO4 laser. Stable laser pulses with duration of 2.3ps were generated at the output power of about 1W. With increasing the pump power to 9 W, the maximum mode-locked power of 1.7 W was obtained, which corresponds to a slope conversion efficiency of 44 % and opticalto-optical conversion efficiency of 19%.     

Passively Q-Switched Quasi-Continuous-Wave Diode-Pumped Intracavity Optical Parametric Oscillator at 1.57

We report on a passively Q-switched quasi-cw diode-pumped Nd:YAG including an intracavity optical parametric oscillator. The dynamics of this system is described by solving the coupled equations. The effect of the initial transmission of Cr⁴⁺:YAG saturable absorber on the signal wave operation is studied. Under optimum conditions, we achieve 2.3mJ energy at 1.57μm wavelength for 40Hz repetition rate. The peak power of the pulses amounts to 0.88MW with the pulse width of 2.6ns. When the Fresnel reflection losses of the filters are taken into account, the pulse energy would be higher than 2.3mJ. To the best of our knowledge, this is the highest pulse energy and peak power for such a type of single resonant quasi-cw diode pumped Nd:YAG/Cr⁴⁺:YAG IOPO laser.     

Passively Mode-Locked Quasi-Three-Level Nd:LuVO4Laser with Semiconductor Saturable Absorber Mirror

We demonstrate a passively a Z-folded resonator. Using device, we achieve stable cw average output power under cw mode-locked Nd：LuVO4 laser operating on the quasi-three-level at 916nm with a semiconductor saturable absorber mirror （SESAM） as the passive mode-locking mode locking with 6.7ps pulse duration at repetition rate of 133 MHz and 88mW the pump power of 17.1 W.     

Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser

The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO₄ crystal and a Cr⁴⁺:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO₄ optically contacted on a 0.4 mm long Cr⁴⁺:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.     

Passively Q-switched laser performance of c-cut Nd:Gd0.63Y0.37VO4 crystal

Passively Q-switched c-cut Nd:Gd_0.63Y_0.37VO₄ laser performance at 1.06 μm was demonstrated with Cr⁴⁺:YAG as saturable absorbers for the first time to our knowledge. This c-cut mixed crystal was found to have large energy storage capacity. The shortest pulse width, largest pulse energy, and highest peak power were obtained to be 6.6 ns, 201.7 μJ, and 30.6 kW, respectively.     

Diode End-Pumped Passively Q-Switched Nd^3＋：GdVO4 Self-Raman Laser at 1176 nm

A compact diode-end-pumped passively Q-switched Nd^3＋ ：GdVO4/C^r4＋ ：YAG self-Raman laser at 1176 nm is demonstrated. When the To = 80% Cr^4＋：YAG saturable absorber is inserted into the cavity, the maximum Rtaman laser output reaches 175 mW with 3.8 W incident pump power. The optical conversion from incident to the Raman laser is 4.6% and the slope efficiency is 6.5%. The pulse energy, duration, and repetition frequency of the first stokes laser are 4.5μJ, 1.8 ns, and 38.5 kHz, respectively. There is strong blue emission （about 350- 400nm） can be observed in the Nd^3＋ ：GdVO4 crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the Nd^3＋ ions.     

A Compact All-Solid-State 630-ps 9.43-kHz High Power Nd：YAG/Nd：YVO4 Hybrid Laser System

We present a simple and compact design for an all-solid-state laser amplifier system which can output 9.43-kHz 630-ps, 3.5-W pulse trains under 20 W absorbed pumping power. The excellent matching between the repetition of its seed source and the fluorescence lifetime of the amplifying medium makes it quiet efficient for the four-pass amplifier to be pumped in cw mode without need of any synchronization device between the oscillator and the amplifier. The entire setup just covers an area of 55 × 25 cm^2. The output average power fluctuation is less than ±1.5% within 10min and 3% within 6h.     

Q-Switched Large-Mode-Area Yb-Doped Fibre Laser Using GaAs as Saturable Absorber

A passive Q-switched large-mode-area Yb-doped fibre laser is demonstrated using a GaAs wafer as the saturable absorber. A high Yb doping concentration double-clad fibre with a core diameter of 30μm and a numerical aperture of 0.07 is used to increase the laser gain volume, permitting greater energy storage and higher output power than conventional fibres. The maximum average output power is 7.2W at 1080nm wavelength, with the shortest pulse duration of 580ns and the highest peak power of 161W when the laser is pumped with a 25W diode laser operating at 976nm. The repetition rate increases with the pump power linearly and the highest repetition rate of 77kHz is obtained in the experiment.     

Efficient Laser-Diode End-Pumped Passively Q-Switched Mode-Locked Yb：LYSO Laser Based on SESAM

We report an efficient Q-switched laser action based on a semiconductor saturable absorber mirrors （SESAMs） as passively Q-switched laser starter and a Yb：LYSO alloyed crystal as gain material pumped directly by 974nm InGaAs laser diodes. The output pulse duration is measured to be about 7μs, while the average power and the repetition rate of the pulse chain are about 0.92 W and 6.2 kHz, respectively, under 12.5 W absorbed pumping power. The Q-switched mode-locked pulse train is also observed in this setup. The laser performance shows that Yb：LYSO is a promising laser gain medium for laser-diode pumped compact solid-state lasers.     

A Bidirectional, Diode-Pumped, Passively Mode-Locked Nd：YVO4 Ring Laser with a Low-Temperature-Grown Semiconductor Saturable Absorber Mirror

We report the operation of a bidirectional picosecond pulsed ring Nd：YVO4 laser based on a low-temperaturegrown semiconductor saturable absorber mirror. Except for the laser crystal, the six-mirror ring laser cavity has no intra-cavity elements such as focusing lens or mirror. The bidirectional mode locked pluses are obtained at the repetition rate of 117.5 MHz, pulse duration of 81 ps, power of 2 × 200 mW.