Die magnetische Suszeptibilität der Defektelektronen in Silizium und Germanium

For semiconductors it is possible, to determine the contribution of the free carriers to the magnetic susceptibility. Holes in silicon (density 10¹⁸ to 10¹⁹cm^?3) have at 297 and 141° K a small paramagnetic susceptibility. In contrast, one computes from cyclotron mass parameters for 4° K a strong diamagnetic susceptibility. Holes in germanium (density 4 · 10¹⁷ and 4 · 10¹⁹ cm^?3) have a diamagnetic susceptibility, which is much smaller, than one would expect from cyclotron resonance masses. — Neutral boron atoms contribute in small concentration at 141 °K to the susceptibility.