Superconductor-to-insulator transition and transport properties of underdoped YBa2Cu3O(y) crystals

The carrier-concentration-driven superconductor-to-insulator (SI) transition as well as transport properties in underdoped YBa2Cu3O(y) twinned crystals is studied. The SI transition takes place at y approximately 6.3, carrier concentration n(SI)H approximately 3x10(20) cm(-3), anisotropy rho(c)/rho(ab) approximately 10(3), and the threshold resistivity rho(SI)ab approximately 0.8 mOmega cm which corresponds to a critical sheet resistance h/4e2 approximately 6.5 kOmega per CuO2 bilayer. The evolution of a carrier, nH infiniti y - 6.2, is clearly observed in the underdoped region. The resistivity and Hall coefficient abruptly acquire strong temperature dependence at y approximately 6.5 indicating a radical change in the electronic state.     

Evidence for a quantum phase transition in Pr2-xCe(x)CuO4-delta from transport measurements

The doping and temperature dependences of the Hall coefficient, R(H), and ab-plane resistivity in the normal state down to 350 mK is reported for oriented films of the electron-doped high-T(c) superconductor Pr(2-x)Ce(x)CuO(4-delta). The doping dependences of beta (rho=rho(0)+ATbeta) and R(H) (at 350 mK) suggest a quantum phase transition at a critical doping near x=0.165.     

Anomalous transport properties and phase diagram of the FeAs-based SmFeAsO1-xFx superconductors

We report the detailed phase diagram and anomalous transport properties of Fe-based high-T_{c} superconductors SmFeAsO1-xFx. It is found that superconductivity emerges at x approximately 0.07, and optimal doping takes place in the x approximately 0.20 sample with the highest T_{c} approximately 54 K. T_{c} increases monotonically with doping; the anomaly in resistivity from structural phase or spin-density-wave order is rapidly suppressed, suggesting a quantum critical point around x approximately 0.14. As manifestations, a linear temperature dependence of the resistivity shows up at high temperatures in the x<0.14 regime but at low temperatures just above T_{c} in the x>0.14 regime; a drop in carrier density evidenced by a pronounced rise in the Hall coefficient is observed below the temperature of the anomaly peak in resistivity. A scaling behavior is observed between the Hall angle and temperature: cottheta_{H} proportional, variantT;{1.5} for all samples with different x in SmFeAsO1-xFx system.     

Electrophysical Properties of ZnAs 2 and CdAs 2 at Hydrostatic Pressure up to 9 GPa

Specific electroresistance and Hall coefficient on oriented ZnAs 2 and CdAs 2 single crystals in the region of room temperatures at hydrostatic pressure up to 9 GPa were measured. In p -ZnAs 2 specific electroresistance falls for one order of magnitude with the increase of pressure, and Hall coefficient falls for two orders in magnitude, and at P =7 GPa specific electroresistance and Hall coefficient come out to a saturation. Under mentioned conditions the phase transition in investigated p -ZnAs 2 samples was not observed, in all probability it occurs under the pressure P >10 GPa. Two groups of n -CdAs 2 samples oriented on [1 0 0] and [0 0 1] directions were investigated. The reversible structural phase transition was observed in investigated n -CdAs 2 samples at P =5.5 GPa from the dependencies of specific electroresistance 𝜌 ( P ) and Hall coefficient R H ( P ). On the basis of the values of concentrations and mobilities before and after phase transition a conclusion was made that semiconductor-semiconductor transition takes place in n -CdAs 2 . Maxima that earlier weren't observed, were detected on dependencies 𝜌 ( P ), R H ( P ) at P =1.8 GPa and at P =3 GPa.     

Negative Magnetoresistance in Antiferromagnetic Topological Insulator EuSn_2As_2

The measurements of magnetization,longitudinal and Hall resistivities are carried out on the intrinsic antiferromagnetic(AFM) topological insulator ElSn_2 As_2.It is confirmed that our ElSn_2 As_2 crystal is a heavily hole doping A-type AFM metal with the Neel temperature T_N=24 K,with a metamagnetic transition from an AFM to a ferromagnetic(FIM) phase occurring at a certain critical magnetic Held for the different Held orientations.Meanwhile,we also find that the carrier concentration does not change with the evolution of magnetic order,indicating that the weak interaction between the localized magnetic moments from Eu~(2+)4f~7 orbits and the electronic states near the Fermi level.Although the quantum anomalous Hall effect(AHE) is not observed in our crystals,it is found that a relatively large negative magnetoresistance (-13%) emerges in the AFM phase,and exhibits an exponential dependence upon magnetic Held,whose microscopic origin is waiting to be clarified in future research.     

In-crystal and surface charge transport of electric-field-induced carriers in organic single-crystal semiconductors

Gate-voltage dependence of carrier mobility is measured in high-performance field-effect transistors of rubrene single crystals by simultaneous detection of the longitudinal conductivity sigma(square) and Hall coefficient R(H). The Hall mobility mu(H) (identical with sigma(square)R(H)) reaches nearly 10 cm(2)/V s when relatively low-density carriers (<10(11) cm(-2)) distribute into the crystal. mu(H) rapidly decreases with higher-density carriers as they are essentially confined to the surface and are subjected to randomness of the amorphous gate insulators. The mechanism to realize high carrier mobility in the organic transistor devices involves intrinsic-semiconductor character of the high-purity organic crystals and diffusive bandlike carrier transport in the bulk.     

Probing the quantum critical behavior of CeCoIn5 via Hall effect measurements

We present highly sensitive Hall effect measurements of the heavy fermion compound CeCoIn5 down to temperatures of 55 mK. A pronounced dip in the differential Hall coefficient | partial differential rho(xy)/ partial differential H| at low temperature and above the upper critical field of superconductivity, H(c2), is attributed to critical spin fluctuations associated with the departure from Landau Fermi liquid behavior. This identification is strongly supported by a systematic suppression of this feature at elevated pressures. The resulting crossover line in the field-temperature phase diagram favors a field induced quantum critical point at mu(0)H(qc) approximately 4.1 T below H(c2)(T=0) suggesting related, yet separate, critical fields.     

Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure

Hall effect measurements of a graphene-on-SiC system were carried out as a function of temperature (1.8–200 K) at a static magnetic field (0.5 T). With the analysis of temperature dependent single-field Hall data with the Simple Parallel Conduction Extraction Method (SPCEM), bulk and two-dimensional (2D) carrier densities and mobilities were extracted successfully. Bulk carrier is attributed to SiC substrate and 2D carrier is attributed to the graphene layer. For each SPCEM extracted carrier data, relevant three-dimensional or 2D scattering analyses were performed. Each SPCEM extracted carrier data were explained with the related scattering analyses. A temperature independent mobility component, which may related to an interaction between graphene and SiC, was observed for both scattering analyses with the same mobility limiting value. With the SPCEM, effective ionized impurity concentration of SiC substrate, extracted 2D-mobility, and sheet carrier density of the graphene layer are calculated with using temperature dependent static magnetic field Hall data.     

Critical point and the nature of the pseudogap of single-layered copper-oxide Bi2Sr2-xLaxCuO6+delta superconductors

We apply strong magnetic fields of H=28.5 to 43 T to suppress superconductivity (SC) in the cuprates Bi2Sr2-xLaxCuO6+delta (x=0.65, 0.40, 0.25, 0.15, and 0), and investigate the low temperature (T) normal state by 63Cu nuclear spin-lattice relaxation rate (1/T1) measurements. We find that the pseudogap (PG) phase persists deep inside the overdoped region but terminates at x approximately 0.05, which corresponds to the hole doping concentration of approximately 0.21. Beyond this critical point, the normal state is a Fermi liquid that persists as the ground state when superconductivity is removed by the magnetic field. A comparison of the superconducting state with the H-induced normal state in the x=0.40 (Tc=32 K) sample indicates that there remains substantial part of the Fermi surface even in the fully developed PG state, which suggests that the PG and SC are coexisting matters.     

Interfacial reactions: mixed order kinetics and segregation effects

We study A-B reaction kinetics at a fixed interface separating A and B bulks. Initially, the number of reactions R(t) approximately tn(infinity)(A)n(infinity)(B) is second order in the far-field densities n(infinity)(A), n(infinity)(B). First order kinetics, governed by diffusion from the dilute bulk, onset at long times: R(t) approximately x(t)n(infinity)(A), where x(t) approximately t(1/z) is the rms molecular displacement. Below a critical dimension, d0) leads to anomalous decay of interfacial densities. Numerical simulations for z = 2 support the theory.     

罗丹明6G缔合微粒共振散射光谱法测定过氧化氢

在0.020mol.L-1HCl-4.0×10-4mol.L-1KI-1.6×10-5mol.L-1Mo(Ⅵ)介质中,罗丹明6G(RhG)在540nm处有1个荧光峰,在540nm处有1个同步荧光峰。当有H2O2存在时,H2O2与过量的I-反应生成I3-,I3-与RhG形成缔合微粒,在320,400,595nm处产生3个共振散射(RS)峰;而在540nm处荧光峰猝灭。H2O2浓度在0.068~34μg.mL-1范围内与400nm波长处的共振散射光强度呈线性关系。据此建立了一个测定水中H2O2的共振散射光谱分析法。光谱研究结果表明,(RhG-I3)n缔合微粒和界面的形成是导致体系RS增强和荧光猝灭的根本原因。     

利用CARS技术研究激发态Rb2和H2的碰撞转移

利用相干反斯托克斯拉曼光谱(coherent anti-stokes Raman spectroscopy,CARS)探测技术,研究了激发态Rb2与H<,2>间的电子-振转能级的碰撞转移.扫描CARS谱确认了H<,2>分子仅在v=1,J=1,2及v=2,J=0,1,2能级上有布居,用n1,n2,n3,n4,n5分别表示...     

Electronic band structure and Fermi surface of CaB6 studied by angle-resolved photoemission spectroscopy

We report high-resolution angle-resolved photoemission spectroscopy (ARPES) on CaB6. The band structure determined by ARPES shows a 1 eV energy gap at the X point between the valence and the conduction bands. We found a small electron pocket at the X point, whose carrier number is estimated to be (4-5) x 10(19) cm(-3), in good agreement with the Hall resistivity measurement with the same crystal. The experimental results are discussed in comparison with band structure calculations and theoretical models for the high-temperature ferromagnetism.     

Preparation and properties of co-evaporated bismuth telluride [Bi2Te3] thin films

Thin films of bismuth telluride have been prepared by the reactive evaporation method. Film properties, such as conductivity, Hall effect, and thermoelectric power were studied in the temperature range from liquid nitrogen to 350 K. The films prepared were of n-type with a carrier concentration of 1.25 x 10²⁰ at room temperature. The temperature dependence of the Hall mobility is found to be T^?1.8 indicating lattice scattering.     

H3O+, NO+和O+·2离子同九种烷氧基醇化合物反应的研究

在用选择离子流动管质谱(SIFT-MS)分析常用指甲油清洗垫发现大量4-丁酸内脂(γ-butyrolactone, GBL)和2-丁氧基乙醇(2-butoxy-1-ethanol)等挥发性气体后, 运用选择离子流动管(SIFT)对H3O , NO 和O ·2离子同九种烷氧基醇化合物(R1-O-R2OH)之间的反应进行了研究. 获得了这些反应在潮湿空气条件下进行的情况, 并运用产物离子水合物的种类和分布来确认产物离子的结构和反应机理. 还研究了在不同载气压力下进行的反应. 结果表明, 这些化合物同H3O 和NO 的反应都是先生成初生态离子-分子络合物, (H3O .M)*和(NO .M)*, 然后经不同反应渠道生成各种离子产物. 这些初生态络合物同反应体系中存在的气体分子(如氦气, 氮气和氧气分子)的碰撞对最终离子产物的形成和分布也有影响. 这些化合物同O2 ·反应会生成各种离解碎片离子, 但不能确定这些离子是否经由初生态络合物(O2 ·.M)*生成. 该项研究提供了用SIFT-MS在空气和潮湿气体中分析这些化合物所需的反应速率常数和离子产物等动力学数据, 并将进一步应用到药物成瘾及滥用和呼吸道疾病的诊断和分析等领域.     

Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films

Highly conductive boron-doped hydrogenated microcrystalline silicon (\mu c-Si:H) films are prepared by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at the substrate temperatures $T_{\rm S})$ ranging from 90$^\circ$C to 270$^\circ$C. The effects of $T_{\rm S}$ on the growth and properties of the films are investigated. Results indicate that the growth rate, the electrical (dark conductivity, carrier concentration and Hall mobility) and structural (crystallinity and grain size) properties are all strongly dependent on $T_{\rm S}$. As $T_{\rm S}$ increases, it is observed that 1) the growth rate initially increases and then arrives at a maximum value of 13.3 nm/min at $T_{\rm S}$=210$^\circ$C, 2) the crystalline volume fraction ($X_{\rm c})$ and the grain size increase initially, then reach their maximum values at $T_{\rm S}$=140$^\circ$C, and finally decrease, 3) the dark conductivity ($\sigma _{\rm d})$, carrier concentration and Hall mobility have a similar dependence on $T_{\rm S}$ and arrive at their maximum values at $T_{\rm S}$=190$^\circ$C. In addition, it is also observed that at a lower substrate temperature $T_{\rm S}$, a higher dopant concentration is required in order to obtain a maximum $\sigma _{\rm d}$.     

Phase diagram of electrostatically doped SrTiO3

Electric double layer transistor configurations have been employed to electrostatically dope single crystals of insulating SrTiO(3). Here we report on the results of such doping over broad ranges of temperature and carrier concentration employing an ionic liquid as the gate dielectric. The surprising results are, with increasing carrier concentration, an apparent carrier-density dependent conductor-insulator transition, a regime of the anomalous Hall effect, suggesting magnetic ordering, and finally the appearance of superconductivity. The possible appearance of magnetic order near the boundary between the insulating and superconducting regimes is reminiscent of effects associated with quantum critical behavior in some complex compounds.     

Co,Zn元素对YBa2Cu3O7-δ的不同的掺杂效应

对单相掺杂样品YBa₂Cu_3-xCo_xO_y (x=0.00,0.025,0.05,0.075,0.10,0.125,0.15,0.20,0.25,O.275,0.30,0.325,0.35,0.375,0.40)和YBa₂Cu_3-xZn_xO_y(x=O.025,0.05,0.075,0.10,0.15,0.20,0.30)作了室温下的 关键词：     

Scaling of anomalous hall resistivity in Nd2(Mo(1-x)Nb(x))2O7 with spin chirality

We have investigated scaling of anomalous Hall resistivity with longitudinal resistivity (rho(xx)) in pyrochlore type Nd2(Mo(1-x)Nb(x))2O7 with spin chirality. Scattering rate of the conduction electron on the Mo sublattice can be varied with x from band transport to polaron hopping, while keeping the two-in-two-out structure of the Nd moments intact. The anomalous part of the Hall resistivity arising from the Mo spin chirality (rho(H)(chi)) shows a clear scaling behavior with rho(xx) (rho(H)(chi) proportional to rho(xx)0.39), in accord with a recent theoretical result based on the Berry phase mechanism in the hopping conduction regime.     

Non-Fermi liquid states in the pressurized CeCu2(Si1-xGex)2 system: two critical points

In the archetypal strongly correlated electron superconductor CeCu2Si2 and its Ge-substituted alloys CeCu2(Si1-xGex)2 two quantum phase transitions--one magnetic and one of so far unknown origin-can be crossed as a function of pressure. We examine the associated anomalous normal state by detailed measurements of the low temperature resistivity (rho) power-law exponent alpha. At the lower critical point (at pcl, 1相似文献