Photoluminescence and luminescence excitation spectra in ZnSiP2

Summary Measurements of photoluminescence and luminescence excitation spectra of ZnSiP₂ have been performed at 4.2K and two results were obtained. One is the observation of a new sharp emission line at 1.980 eV, due to the bound exciton associated with the pseudodirect gap. The other is the observation of another new series of absorption lines in the luminescence excitation spectrum of an emission line, at 1.984 eV, in addition to those reported previously. These results indicate that in ZnSiP₂ radiative transitions occur at both the indirect and the pseudodirect gaps. Paper presented at the ?V International Conference on Ternary and Multinary Compound?, held in Cagliari, September 14–16, 1982.     

Photoluminescence lifetimes of the In,Tl and Bi bound excitons in silicon

We report measurements of the photoluminescence decay times of bound excitons associated with the donor Bi and the acceptors In and Tl in silicon. These are the first reported results for Tl and Bi, respectively the deepest simple acceptor and donor in silicon. The Tl bound exciton lifetime is found to be in good agreement with a value extrapolated from the results for shallower acceptors. The Bi bound exciton, on the other hand, has a much shorter lifetine than an extrapolation from the shallower donor results would predict.     

Photoluminescence of Cu2O Crystals of Different Origins

Physics of the Solid State - Low-temperature luminescence spectra of Cu2O crystals grown by different methods (copper oxidation, induction charge melting, magnetron sputtering, and hydrothermal),...     

非晶SnO2:(Cu,In)薄膜的荧光特性及带尾态

用反应蒸发法在玻璃等衬底上制备出铜和铟掺杂的氧化锡SnO2:(Cu,In)薄膜.对制备薄膜的发光性质做了研究,制备样品为非晶态,具无定形结构.测量了薄膜在220-1100 nm范围的透过率,得到的带隙宽度Eopt g=4.645 eV.室温条件下对样品进行光致发光测量,得到了显著的紫外(276-550 nm)蓝绿光连续谱,通过发光谱的研究给出了这种材料的隙态分布.     

Photoluminescence of Si nanocrystals under selective excitation

Photoluminescence of Si nanocrystals passivated by different alkanes (hexane, octane, and tridecane) was studied at room temperature. It is shown that the emission band shape is not affected by the length of the carbon chain in the alkanes used for passivation. A pronounced fine structure of the photoluminescence band consisting of peaks separated by 150-160 meV was observed under resonant excitation. The structure is interpreted by predominant contribution from Si nanocrystal groups with particular stable size/shape existing in addition to the previously reported nanocrystals with “magic” numbers of Si atoms. The contribution of these stable nanocrystals is revealed using selective resonant photoexcitation to the higher energy states in the discrete energy spectrum of such nanocrystals.     

Laser excitation spectra and lifetimes of CBrCl and CBr2 in solid Ar

The CBr₂ and CBrCl emissions in solid Ar have lifetimes of 5.6 and 14.5 μsec, respectively. Laser excitation spectra of the fluorescence provide information about the upper state vibrations structure of these species. Mode-to-mode vibrational energy transfer in CBrCl appears to be inefficient.     

Photoluminescence of SrS: Cu phosphors

Results of the investigation on the spectral characteristics of PL of SrS:Cu phosphors are presented. Probable emitters for the three observed bands, viz. 4710 Å, 5200 Å and 5480 Å, have been suggested.     

Level structure and lifetimes of low-excitation states in 63Cu

The lifetimes of 9 states in ⁶³Cu up to an excitation energy of 2092 keV have been determined by means of the Doppler-shift attenuation method using the ${}^{60}\text{Ni}\text{(α,}\text{p}\text{γ)}$ reaction. A search was made for a suitable set of M1 and E2 single-particle matrix elements for use with shell-model eigenstates throughout the Ni, Cu and Zn isotopes. The theoretical predictions for the level spectroscopy and electromagnetic transitions and static moments in ⁶³Cu are in satisfactory agreement with the experimental findings.     

Photoluminescence inner core excitation in semiconductor quantum structures

We introduce a photoluminescence inner core excitation (PLICE) for the studies of semiconductor quantum structures. This novel method, in which we use synchrotron radiation as tunable excitation source, is expected to facilitate us to obtain electronic and compositional information about buried quantum structures. Here we report experimental results on quantum dots (QDs) and quantum wires (QWRs), in order to demonstrate potential applicability of the method to the semiconductor nanostructure studies.     

Some lifetimes and transition probabilities in Cu(I)

Radiative lifetimes of 7 levels in the Cu(I) 3d⁹ 4s4p configuration have been measured using a delayed coincidence technique; copper vapor was excited in an argon buffer gas and cross sections for collisional destruction of copper levels by argon were also obtained. Transition probabilities of the lines originating from these levels have been determined using the measured lifetimes and branching ratios.     

Cu_2O纳米线激子精细结构光谱分析

基于显微拉曼光谱仪研究比较单根与多根Cu_2O纳米线荧光光谱特性,通过详细分析显微荧光谱线信息,研究制备得到的Cu_2O纳米线的精细结构。单根Cu_2O纳米线表现出高能激子发射及其高阶声子辅助的光学跃迁谱线。     

Photoluminescence excitation properties of porous silicon with and without Er-Yb-containing complex

Two bands in the photoluminescence excitation spectra have been studied for the red, blue, and IR emission of oxidized porous silicon (PS) and PS with Er³⁺- and Yb³⁺-containing gadolinium oxychloride complex (PS:Er,Yb), introduced by thermal diffusion. These two spectral bands were shown to reflect contributions of two different mechanisms of excitation-emission processes. The UV band for the IR emission of PS:Er,Yb rose sharply at about 290 nm and was explained by the direct photoemission of carriers from the valence band of Si crystallites into the conduction band of the oxide shell. The second band was found to be common for the red and blue emission and assosiated with the carriers photoexcitation inside the Si crystallites. Lifetimes for both bands were measured and the structure of the blue emission from PS:Er,Yb with peaks at 416, 440, 466, and 500 nm from PS:Er,Yb was observed.     

Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si

The photoluminescence of GaAs/Si grown by OMCVD has been analyzed as a function of temperature and the dominant high temperature line identified as a conduction-band-to-valence-band transition. Photoluminescence excitation spectra indicate that the transition is excitonic at 4.2 K. A second line, also identified as intrinsic, dominates the spectra below 100 K. A biaxial tensile strain is proposed to account for the two intrinsic lines through a splitting of the valence band degeneracy.     

Cd掺杂的Cu_2ZnSnS_4光伏材料的发光光谱及其太阳能电池器件特性

利用溅射-硫化法制备了一系列不同Cd含量掺杂的铜锌锡硫薄膜材料,并获得了转换效率最高达10.65%的薄膜太阳能电池。利用扫描电子显微镜、变温光致发光谱、变激发密度发光光谱对材料进行了表征,分析了电池器件的电容-电压、电流-电压特性。材料的发光峰峰值显示出反常的温度依赖性,载流子表现出强烈的局域化特征。Cd的适当掺入可以抑制较深缺陷的形成并减小发光峰值和带隙值之间的能量差,从而减小了器件开路电压的损失,有利于器件效率的提升。     

Photoluminescence of supernatant liquid of washed erythrocytes upon ultraviolet excitation

In this paper, we present the results of the study of supernatant liquid of washed erythrocytes by the photoluminescence upon ultraviolet excitation. The spectra of intrinsic photoluminescence of an aqueous solution of “Sodium adenosine triphosphate-Vial” (Na₂ATP) were compared with the spectra of supernatant liquid of erythrocytes with added Na₂ATP, glucose, and without additional substances. The results of the comparison suggest that ATP emerging from washed erythrocytes into environment can be recorded in supernatant liquid.