Dipoles and band alignment for benzene/Au(111) and C<Subscript>60</Subscript>/Au(111) interfaces

A local orbital DFT-approach combined with a “scissor”-operator is used to obtain the Charge Neutrality Level and the screening parameter in the benzene/Au(111) and C₆₀/Au(111) interfaces. The “pillow” dipole and interface Fermi level are also calculated. The total dipole induced across the interface is compared with the experimental evidences: while the agreement for C₆₀/Au(111) is excellent, for benzene/Au(111), some discrepancies appear that are discussed in the light of other models.     

Exciton dynamics at interfaces of organic semiconductors

We review recent progress of using time-resolved two-photon photoelectron spectroscopy (2PPE) to study the energetics and dynamics of excitons at surfaces and interfaces of two prototypical organic semiconductors: C₆₀ and pentacene. For C₆₀ thin films epitaxially grown on Au(1 1 1) and Cu(1 1 1) surfaces, we observe both charge transfer and exciton states. For excitons in C₆₀, the proximity of a metal surface leads to rapid, exciton band-mediated quenching. At the surface of pentacene thin films we observe a series of charge-transfer excitons where the electron and the photohole are bound across the interface. The ability of 2PPE to measure and directly relate exciton levels to single-electron levels is illustrated.     

Metal clusters in metal/C thin film nanosystems

Structure of metal clusters and of the C₆₀ matrix in Au/C₆₀ and Cu/C₆₀ nanosystems was investigated by X-ray diffraction. Results support a charge-transfer-type interaction at the metal-C₆₀ interface, which affects the size distribution of metal clusters, favouring interstitial location of metal ions in the fullerite lattice. Received 5 February 1999 and Received in final form 7 July 1999     

Vibrational dynamics of fullerene molecules adsorbed on metal surfaces studied with synchrotron infrared radiation

Infrared (IR) spectroscopy of chemisorbed C₆₀ on Ag (111), Au (110) and Cu (100) reveals that a non-IR-active mode becomes active upon adsorption, and that its frequency shifts proportionally with the charge transferred from the metal to the molecule by about 5 cm^-1 per electron. The temperature dependence of the frequency and the width of this IR feature have also been followed for C₆₀/Cu (100) and were found to agree well with a weak anharmonic coupling (dephasing) to a low-frequency mode, which we suggest to be the frustrated translational mode of the adsorbed molecules. Additionally, the adsorption is accompanied by a broadband reflectance change, which is interpreted as due to the scattering of conduction electrons of the metal surface by the adsorbate. The reflectance change allows determination of the friction coefficient of the C₆₀ molecules, which results in rather small values (∼2×10⁹ s^-1 for Ag and Au, and ∼1.6×10⁹ s^-1for Cu), consistent with a marked metallic character of the adsorbed molecules. Pre-dosing of alkali atoms onto the metal substrates drastically changes the IR spectra recorded during subsequent C₆₀ deposition: anti-absorption bands, as well as an increase of the broadband reflectance, occur and are interpreted as due to strong electron–phonon coupling with induced surface states. Received: 6 June 2001 / Accepted: 23 October 2001 / Published online: 3 April 2002     

Gap states at organic-metal interfaces: A combined spectroscopic and theoretical study

A systematic understanding and controlling of gap states formed at the organic-metal interfaces is a key factor for fabricating functional organic-metal systems, as in case of heterojunctions in semiconductor devices. We report here the characterization of gap states near the Fermi level of metal substrate by metastable atom electron spectroscopy and first-principles density functional calculations. The gap states in organic-metal systems are classified into two types, i.e., chemisorption-induced gap states (CIGSs) and complex-based gap states (CBGSs). CIGSs can be further classified whether the metal wave function tails a short distance into the chemisorbed species with the exponential decay (damping type) or is exposed sufficiently to the chemisorbed species by mixing with the organic orbitals (propagating type). CIGSs observed in alkanethiolate and C₆₀ on Pt(1 1 1) are their typical examples, respectively. As a consequence, alkanethiolate serves as a poor mediator of metal wave function, whereas C₆₀ acts as a good mediator, which is responsible for tunneling mechanism and eventually electric conductivity in the relevant metal-organic-metal junctions. CBGSs are identified in bathocuproine films deposited on K-covered Au, where the K atoms migrate into the film to form an organic-metal complex. The CBGSs are distributed over the multilayer film, in contrast to the case of CIGS. With increasing film thickness, the CBGSs exhibit incommensurate energy shifts with the valence band top of the film, indicating that the Schottky-Mott model breaks down as evaluating charge transport in organic-metal systems.     

Surface interactions of Au(I) cyclo-trimer with Au(111) and Al(111) surfaces: A computational study

A plane-wave density functional theory (DFT) study on surface interactions of a cyclo-[Au(μ-Pz)]₃ monolayer (denoted as T), Pz = pyrazolate, with Au(111) and Al(111) surfaces (denoted as M′) has been performed. Structural and electronic properties at the M′–T interfaces are determined from individually optimized structures of M′, T and M′–T. Results show that the gold pyrazolate trimer (T) binds more strongly on the Au(111) surface than on Al(111). Charge redistribution has been observed at both M′–T interfaces, where charge is “pushed” back towards the Au(111) surface from the trimer monolayer in Au(111)–T system, while the opposite happens in the Al(111)–T system where the charge is being pushed toward the trimer monolayer from the Al(111) surface. Considerable changes to the work function of Au(111) and Al(111) surfaces upon the trimer adsorption which arise from monolayer vacuum level shifts and dipole formation at the interfaces are calculated. The interaction between cyclo-[Au(μ-Pz)]₃ with metal surfaces causes band broadening of the gold pyrazolate trimer in M′–T systems. The present study aids better understanding of the role of intermolecular interactions, bond dipoles, energy-level alignment and electronic coupling at the interface of metal electrodes and organometallic semiconductor to help design metal–organic field effect transistors (MOFETs) and other organometallic electronic devices.     

The role of metal contacts in the stability of n-type organic field effect transistors

We are presenting a long-time bias stress stability of C₆₀-based n-type organic field effect transistors (OFETs), in bottom gate, top contacts configuration, with aluminium (Al), silver (Ag) and gold (Au) source–drain contacts. The results clearly shows that the bias stress effects in C₆₀-based n-type OFETs is similar to p-type OFETs and it can be reduced by using an appropriate metal for the source–drain contacts. During the bias stress time, the threshold voltage shift and an increase in the contacts resistance have also been measured. On the basis of the stability of the device parameters, it is proposed that the Al source–drain contact-based devices gives better stability as compared to the devices with Ag and Au source–drain contacts. Our results show that the bias stress-induced threshold voltage shift is due to the trapping of charges in the channel region and in the vicinity of the source–drain contacts.     

Rectifying resistance switching behaviors of SnO2 microsphere films modulated by top electrodes

Based on the bipolar resistive switching (RS) characteristics of SnO₂ films, we have fabricated a new prototypical device with sandwiched structure of Metal/SnO₂/fluorine-doped tin oxide (FTO). The SnO₂ microspheres film was grown on FTO glass by template-free hydrothermal synthesis, which was evaporated with various commonly used electrodes such as aluminium (Al), silver (Ag), and gold (Au), respectively. Typical self-rectifying resistance switching behaviors were observed for the RS devices with Al and Au electrodes. However, no obvious rectifying resistance switching behavior was observed for the RS device with Ag electrode. Above results were interpreted by considering the different interface barriers between SnO₂ and top metal electrodes. Our current studies pave the ways for modulating the self-rectifying resistance switching properties of resistive memory devices by choosing suitable metal electrodes.     

Electronic structure and adhesion on metal-aluminum-oxide interfaces

This paper reports on the results of the systematic analysis of the atomic and electronic structure of the Me/α-Al₂O₃(0001) interfaces for two series of isoelectronic metals (Me = Cu, Ag, Au and Ni, Pd, Pt), depending on the termination of the oxide substrate and the configuration of oxide films. The calculations have been performed by the pseudopotential method in the plane-wave basis set. The adhesion energy of metal films has been calculated depending on the cleavage plane. It has been shown that the adhesion energy is maximum at the oxygen interface, which is caused by the ion component in chemical bonding at this interface. The aluminum and aluminum-enriched interfaces are characterized by the metallic type of bonding. The local densities of states and the charge distribution near the interface have been analyzed. It has been demonstrated that oxygen vacancies at the interface substantially weaken the adhesion due to the partial breaking of Me-O bonds.     

Effect of Intercalated LiF on Interface Contact Characteristics of MoS2 Field Effect Transistor: A First-Principles Study

Based on the first-principles calculation, the effect of intercalated LiF on the contact characteristics of the interface between Au electrode and MoS₂ layer is studied. It is found that adding LiF film can change the contact type between metal electrode Au and MoS₂ layer from Schottky contact to ohmic contact, which is accompanied by interfacial charge transfer from LiF layer to MoS₂ layer and the downward movement of d (d_xy and d_z2) orbital of Mo atom and p (p_x and p_y) orbital of S atom to Fermi level. And the interlayer spacing between LiF layer and Au electrode has a great impact on the interface contact characteristics. The electric field effect and stress effect of interface contact of Au, LiF and MoS₂ (Au/LiF/MoS₂)is more obvious than that of interface contact of Au and MoS₂ (Au/MoS₂). Au/LiF/MoS₂ shows ohmic contact with the interlayer spacing between Au layer and LiF layer less than 3.05 Å and with the electric field less than 0.15 VÅ⁻¹, respectively, while Au/MoS₂ still shows N-type Schottky contact. These findings are helpful to control the contact resistance and have guiding significance for high performance MoS₂ field effect transistor and other electronic components.     

Probing the interaction at the C60-SiC nanomesh interface

Synchrotron-based high-resolution photoemission spectroscopy (PES) and in situ scanning tunneling microscopy (STM) are used to investigate the interaction at the C₆₀-SiC nanomesh interface during the sequential deposition and subsequent desorption of C₆₀ molecules. A weak charge transfer occurs at the C₆₀-nanomesh interface, involving electrons transferring from nanomesh to C₆₀ overlayer. The interface interaction originated from the weak charge transfer at the C₆₀-nanomesh interface is stronger than C₆₀ intermolecular interaction (e.g., van-der-Waals force), facilitating the layer-by-layer growth for the first two layers of C₆₀ on SiC nanomesh. The highly corrugated nanomesh surface results in an anisotropic diffusion and high diffusion barrier of C₆₀ on top, and thereby leads to the formation of irregularly shaped C₆₀ islands under submonolayer condition. In contrast, C₆₀ diffusion on HOPG and Ag(1 1 1) surfaces is rather isotropic, resulting in the formation of hexagonally shaped C₆₀ islands with smooth domain boundaries. STM results show the partial desorption of C₆₀ molecules from the SiC nanomesh surface after annealing the 1 ML C₆₀ sample (complete wetting layer of C₆₀ on SiC nanomesh) at around 150 °C for 20 min. Thorough desorption of C₆₀ molecules and full recovery of the clean SiC nanomesh are observed after annealing at around 200 °C for 20 min. In situ PES and STM experiments clearly demonstrate that C₆₀ adsorption and desorption processes do not affect the underlying SiC nanomesh structure, revealing its thermal stability and chemical inertness to C₆₀ molecules.     

Effect of interfacial alloying on the surface plasmon resonance of nanocrystalline Au-Ag multilayer thin films

Nanocrystalline Au and Ag in multilayer thin film form with Au/Ag/Au structure were prepared by high pressure (∼40 Pa) d.c. sputtering techniques. The Ag concentrations in Ag_xAu_1-x films were changed from x = 0 to 1. These multilayer films with varying Ag concentration showed significant changes in microstructures obtained from TEM and XRD analyses. The optical absorption spectra of these multilayer films showed a single plasmon band confirming the formation of Au-Ag alloy. We ascribe this alloying to the interfacial reactions in nanophase limited at the Au-Ag interface. The red-shift and broadening of the plasmon bands with the increase in silver concentration could be associated to the increase in size of the nanoparticles and its distribution. The observed red shift in the plasmon band may be associated with the change in electronic structure at the Au-Ag interface due to configuration mixing of the atomic energy levels of Au and Ag. Received 17 October 2002 / Received in final form 26 February 2003 Published online 23 May 2003 RID="a" ID="a"e-mail: msakp@mahendra.iacs.res.in     

Orientation-dependent ionization potential of CuPc and energy level alignment at C60/CuPc interface

The electronic structure evolution of interfaces of fullerene (C₆₀) with copper phthalocyanine (CuPc) on highly oriented pyrolytic graphite (HOPG) and on native silicon oxide has been investigated with ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. The LUMO edge of C₆₀ was found to be pinned at the interface with CuPc on SiO₂. A substantial difference in the electron affinity of CuPc on the two substrates was observed as the orientation of CuPc is lying flat on HOPG and standing up on SiO₂. The ionization potential and electron affinity of C₆₀ were not affected by the orientation of CuPc due to the spherical symmetry of C₆₀ molecules. We observed band bending in C₆₀ on the standing-up orientation of CuPc molecules, while the energy levels of C₆₀ on the flat-lying orientation of CuPc molecules were observed to be flat. The observation points to a dependence of photoexcited charge transfer on the relative molecular orientation at the interface.     

FePc与TiO2(110)及C60界面电子结构研究

基于C₆₀受体和有机分子给体的太阳能电池是目前非常重要的一个研究热点, 利用同步辐射真空紫外光电子能谱(SRUPS) 技术研究了酞菁铁(FePc)与TiO₂(110)及C₆₀的界面电子结构, 以及FePc与C₆₀分子混合薄膜的电子结构. SRUPS价带谱显示, FePc沉积在化学计量比与还原态两种不同的TiO₂(110)表面时, FePc分子的HOMO能级均随FePc厚度的变化发生了移动, 而在化学计量比的TiO₂(110)表面位移较大, 同时发生界面能带弯曲, 说明存在从有机层向衬底的电子转移. 在FePc/C₆₀和C₆₀/FePc界面形成过程中, FePc与C₆₀分子的最高占据分子轨道(HOMO)位移大小基本相同. 由界面能级排列发现, 在FePc与C₆₀的混合薄膜中, FePc分子的HOMO与C₆₀分子的最高占据分子轨道能级差较大, 这有利于提高器件开路电压, 改善器件性能.     

TFTTP作为阴极缓冲层提高有机薄膜太阳能电池的内建电场和载流子收集效率

采用一种新型的电子传输材料TFTTP作为阴极缓冲层提高基于SubPc/C₆₀异质结的有机薄膜太阳能电池的性能. 通过在有机活性层和金属电极之间加入TFTTP界面层,器件的能量转换效率提高了约30%. 系统研究了器件的二极管特性、光电流特性以及内部的光场分布情况,结果表明,TFTTP阴极缓冲层的引入可以有效地提高器件的内建电场,进而增加电荷转移激子的分离效率. 通过使用TFTTP作为阴极缓冲层,在C₆₀/金属界面形成良好的欧姆接触,降低了界面接触电阻,有利于自由载流子的收集.     

Resistance switching in Fe-doped P0.7Ca0.3MnO3 thin films

An enhanced electric-pulse-induced resistance (EPIR) switching effect is observed in the Ag/P_0.7Ca_0.3Mn_1 − xFe_xO₃/YBa₂Cu₃O₇ (Ag/PCMFO/YBCO) and Ag/(PCMFO/PCMO)/YBCO structures. Unlike in the PCMO-based EPIR devices, where the Ag/PCMO interface plays a crucial role, both the Ag/PCMFO interface and the bulk PCMFO are found to have significant contributions to the EPIR switching of the PCMFO-based device. A possible explanation is to extend the pulse-driven oxygen ion/vacancy motion model at the metal/PCMO interface region to the bulk PCMFO.     

Modulation of the work function of fullerenes C60 and C70 by alkali-metal adsorption: A theoretical study

The impact of alkali-metal (Li/Na/Cs) adsorption on work function of fullerenes C₆₀ and C₇₀ was investigated by first-principles calculations. After adsorption, the work functions of fullerenes C₆₀ and C₇₀ decrease distinctly and vary linearly with the electronegativity of the alkali metal elements, and the positions where the alkali atoms are adsorbed considerably influence the work functions. On the contrary, a vacancy defect elevates the work functions of the fullerenes C₆₀ and C₇₀. The variation in the work functions rests with variation in Fermi level (which are attributed to charge transfer) and variation in vacuum levels (which are attributed to the induced dipole moments). Moreover, alkali-metal adsorption can also improve the electric conductivity of a fullerene mixture of C₆₀ and C₇₀.     

Electrodiffusion phenomena in C<Subscript>60</Subscript> thin films

As part of our ongoing research program to produce semiconductor devices based on C₆₀ thin films, we report here on our first attempts at the intercalative doping of C₆₀ thin films through the diffusion of metals. Two techniques were employed: (a) chemically induced counter electrodiffusion of Cu and I₂ into a C₆₀ matrix and (b) Au diffusion under the action of an external electric field.     

Charge‐transfer‐induced doping at an electron donor (α‐sexithiophene)/acceptor (C60) interface and mobility improvement

We studied various aspects relating to surface charge‐transfer‐induced doping at an organic/organic interface using in situ electrical measurements with a field‐effect transistor (FET) during the formation of the electron donor/acceptor interface. Adsorption of the electron‐accepting molecules (C₆₀) on top of the electron donating molecules (α‐6T) led to an increase in the FET hole mobility in an α‐6T film. Under illumination, the FET hole mobility in the α‐6T film with C₆₀ deposition was significantly increased in comparison with that in the dark due to exciton dissociation at the C₆₀/α‐6T interface, resulting in a large threshold voltage shift. The origin of the mobility increase is explained by the multiple trapping and release (MTR) model in which the mobility is determined by the carrier density. Various phenomena relevant to charge transfer and charge transport at the organic/organic interface are reported and their origins are discussed. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

金属-半导体超晶格中界面电荷的生成机理

采用LMTO ASA能带计算方法，研究(Si₂)₃ (2Al) ₆ (001),(Ge₂)₃ (2Al) ₆ (001),(Ge₂)₃ (2Au) ₆ (001)和(Ge₂)₃ (2Ag) ₆ (001)超晶格中半导体界面电荷Qss的生成机理，结 关键词： Schottky势垒 界面电荷