Simplified fabrication and electrical analysis of crystalline silver nanowire

Silver nanowires have been fabricated using electrochemical deposition within the confined nanochannels of anodic alumina membrane on aluminum substrate. The characterization of structure, morphology, and composition indicates that the silver nanowires are uniform with about 50?nm diameter corresponding to the pore diameter of the anodic alumina membrane and almost single crystal with preferred growth along the [111] direction. Electrical measurements at room temperature showed that these silver nanowires were high conductive with a conductivity of approximately 0.13×10⁵?S/cm. Also, individual silver nanowires were investigated by measuring current as a function of bias voltage until the point of failure. This study will be very useful for the development of future nanoelectronic devices and circuits that employ Ag nanowires.     

Methods of fabrication and study of nanowires

Several modem methods of nanowires fabrication and their characterization are presented and discussed. Electronic and thermal transport measurement techniques ofnanowire arrays as well as of an individual nanowire in the wide temperature range are presented.     

Influence of the electrical parameters on the fabrication of copper nanowires into anodic alumina templates

Metallic copper nanowires have been grown into the pores of alumina membranes by electrodeposition from an aqueous solution containing CuSO₄^.and H₃BO₃ at pH 3. In order to study the influence of the electrical parameters on growth and structure of nanowires, different deposition potentials (both in the region where hydrogen evolution reaction is allowed or not) and voltage perturbation modes (constant potential or unipolar pulsed depositions) were applied. In all cases, pure polycrystalline Cu nanowires were fabricated into template pores, having lengths increasing with the total deposition time. These nanowires were self-standing, because they retain their vertical orientation and parallel geometry even after total template dissolution.However, the electrical parameters influence the growth rate, length uniformity and crystal size of the nanowires. Continuous electrodeposition resulted in higher growth rates but less uniform lengths of nanowires grown inside different membrane pores, whilst a square pulse deposition produced a slower growth but quite uniform lengths. Also the grain size, of the order of 50 nm, was slightly influenced by the potential perturbation mode.     

Silicon nanowires for sequence-specific DNA sensing: device fabrication and simulation

Highly sensitive, sequence-specific and label-free DNA sensors were demonstrated by monitoring the electronic conductance of silicon nanowires (SiNWs) with chemically bonded single-stranded (ss) DNA or peptide nucleic acid (PNA) probe molecules. For a 12-mer oligonucleotide, tens of pM of target ss-DNA in solution was recognized when the complementary DNA oligonucleotide probe was attached to the SiNW surfaces. In contrast, ss-DNA samples of ×1000 concentration with a single-base mismatch produce only a weak signal due to nonspecific binding. In order to gain a physical understanding of the change in conductance of the SiNWs with the attachment of the DNA targets and the probes, process and device simulations of the two-dimensional cross sections of the SiNWs were performed. The simulations explained the width dependence of the SiNW conductance and provided understanding to improve the sensor performance. PACS 85.35.-p; 87.83.+a; 07.07.Df     

Al-doped ZnO: Electronic, electrical and structural properties

Changes in structural, electrical and electronic properties of zinc oxide (ZnO) due to Al doping are studied using a quantum-chemical approach based on the Hartree-Fock theory. A periodic supercell of 128 atoms has been exploited throughout the study. The atomic parameters for Zn atom were obtained by reproducing the main properties of ZnO crystal as well as the first three ionization potentials of Zn atom. The perturbation imposed by Al atom incorporation leads to the atomic relaxation, which is computed and discussed in detail. A novel effect of electron density redistribution between different atomic orbitals within the same atom has been found. This phenomenon influences atomic rearrangement near Al impurity. The Al doping generates a free electron in the conduction band, which can be considered as a large radius electron polaron increasing the n-type electrical conductivity in the crystal in agreement with the known experimental data. The obtained small increase in the band-gap width due to the impurity incorporation resolves existing experimental debates on this point.     

Mo6S6 nanowires: structural, mechanical and electronic properties

The properties of nanowires were investigated with ab initio calculations based on the density-functional theory. The molecules build weakly coupled one-dimensional chains, like and Mo₆S_9-xI_x, and the crystals are strongly uniaxial in their mechanical and electronic properties. The calculated moduli of elasticity and resilience along the chain axis are c₁₁ = 320 GPa and E_R = 0.53 GPa, respectively. The electronic band structure and optical conductivity indicate that the crystals are good quasi-one-dimensional conductors. The frequency-dependent complex dielectric tensor ε, calculated in the random-phase approximation, shows a strong Drude peak in ε_∥, i.e., for the electric field polarised parallel to the chain axis, and several peaks related to interband transitions. The electron energy loss spectrum is weakly anisotropic and has a strong peak at the plasma frequency ħω_p ≈20 eV. The stability analysis shows that is metastable against the formation of the layered .     

Novel nanotubes and encapsulated nanowires

2 mixtures. Prolonged electron irradiation of these nanowires leads to axial growth and to dynamic transformations. These observations suggest ways in which materials may be modified by microencapsulation and irradiation. Received: 31 July 1997/Accepted: 6 October 1997     

Miniature piezoelectric conical transducer: fabrication, evaluation and application

This paper reports a new type miniature-conical transducer for acoustic emission measurements. The transducer follows the basic idea and structure of a conventional NBS conical transducer, but is much compact in size and easier to use. The improvements are made possible by introducing an excimer laser micromachining method for fabricating smaller PZT conical elements, which play a key role in the transducer. Conical PZT elements with contact size less then 300 microm are laser-machined and the miniature-conical transducers are constructed. Standard quantitative acoustic emission testing is performed on a plate using the fabricated transducers and good results are observed. The transducers can be very useful in many applications involving quantitative measurements of transient elastic waves.     

Cu-doped ZnO nanoparticles: Synthesis, structural and electrical properties

Pure and Cu doped ZnO nanopowders (5, 10, 15, 20, 25 and 30 at% Cu) have been synthesized using co-precipitation method. Transmission Electron Microscopic analysis has shown the morphology of ZnO nanopowders to be quasi-spherical. Powder X-ray Diffraction studies have revealed the systematic doping of Cu into the ZnO lattice up to 10% Cu, though the peaks corresponding to CuO in 10% Cu are negligibly very small. Beyond this level, there was segregation of a secondary phase corresponding to the formation of CuO. Fourier Transform Infrared spectra have shown a broad absorption band at ∼490 cm⁻¹ for all the samples, which corresponds to the stretching vibration of Zn-O bond. DC electrical resistivity has been found to decrease with increasing Cu content. The activation energy has also been observed to decrease with copper doping i.e. from ∼0.67 eV for pure ZnO to ∼0.41 eV for 30 at% Cu doped ZnO.     

Novel fabrication technologies of planar nano-gap electrodes for single molecule evaluation

Present information technologies use semiconductor devices and magnetic/optical disc. However, they are all foreseen to face fundamental limitations within a decade. Therefore, superseding devices are required for the next paradigm of high performance information technologies. This paper describes prospects for single molecule devices suitable for future information processing technologies, which are expected as the most probable candidate to supersede the present semiconductor devices. The first milestone towards the realization of single molecule devices in future electronics requires quantitative evaluation of single molecule characteristics, which inevitably needs planar nano-gap electrodes between which single molecules are sandwiched, observed their structures and measured their electrical characteristics. Nano-meter electrode pattern fabrication was achieved by electron beam lithography and metal lift-off, while planarization process requires many new technologies including chemical–mechanical polishing (CMP) and wafer bonding. The detailed planarization processing technologies are described in this paper to realize nm-planar nano-scale electrodes.     

Synthesis and electrical properties of ZnO nanowires

Vertically aligned ZnO nanowires were synthesized on the p(+) silicon chip by modifying the CVD process with a vapor trapping design. Scanning electron microscopy was used to investigate the morphology of as-obtained nanowires. X-ray diffraction showed that the obtained nanowires were ZnO crystalline. The rectifying characteristics of the p-n heterojunction composed of ZnO nanowires and a p(+) silicon chip were observed. The positive turn-on voltage was 0.5V and the reverse saturation current was 0.01mA. These vertically aligned ZnO nanowires showed a low field emission threshold of 4V/microm at a current density of 0.1microA/cm(2). The dependence of emission current density on the electric field followed Fowler-Nordheim relationship.     

Synthesis,structural and ellipsometric evaluation of oxygen-deficient and nearly stoichiometric zinc oxide and indium oxide nanowires/nanoparticles

Oxygen-deficient (OD) and nearly stoichiometric (NST) ZnO and In₂O₃ nanowires/nanoparticles were synthesized by chemical vapor deposition on Au-coated silicon substrates. The OD ZnO and OD In₂O₃ nanowires were synthesized at 750 and 950°C, respectively, using Ar flow at ambient pressure. A mixture of flowing Ar and O₂ was used for synthesizing NST ZnO nanowires and NST In₂O₃ nanoparticles. Growth of OD ZnO nanowires and NST In₂O₃ nanoparticles was found to be via a vapor–solid (VS) mechanism and the growth of NST ZnO nanowires was via a vapor–liquid–solid mechanism (VLS). However, it was uncertain whether the growth of OD In₂O₃ nanowires was via a VS or VLS mechanism. The optical constants, thickness and surface roughness of the prepared nanostructured films were determined by spectroscopic ellipsometry measurements. A three-layered model was used to fit the calculated data to the experimental ellipsometric spectra. The refractive index of OD ZnO, NST ZnO nanowires and NST In₂O₃ nanoparticles films displayed normal dispersion behavior. The calculated optical band gap values for OD ZnO, NST ZnO, OD In₂O₃ nanowires and NST In₂O₃ nanoparticles films were 3.03, 3.55, 2.81 and 3.52?eV, respectively.     

Synthesis and photoluminescence property of boron carbide nanowires

Large scale, high density boron carbide nanowires have been synthesized by using an improved carbothermal reduction method with B/B203/C powder precursors under an argon flow at 1100℃. The boron carbide nanowires are 5-10 μm in length and 80-100 nm in diameter. Transmission electron microscopy （TEM） and selected area electron diffraction （SAED） characterizations show that the boron carbide nanowire has a B4C rhombohedral structure with good crystallization. The Raman spectrum of the as-grown boron carbide nanowires is consistent with that of a B4C structure consisting of B11C icosahedra and C-B-C chains. The room temperature photoluminescence spectrum of the boron carbide nanowires exhibits a visible range of emission centred at 638 nm.     

Hydrothermal synthesis of MnO2 nanowires: structural characterizations,optical and magnetic properties

In this paper, 1D single-crystalline MnO₂ nanowires have been successfully synthesized by hydrothermal method using KMnO₄ and (NH₄)₂S₂O₈ as raw materials. X-ray diffraction patterns and high-resolution TEM images reveal pure tetragonal MnO₂ phase with diameters of 15–20 nm. Photoluminescence studies exhibited a strong ultraviolet (UV) emission band at 380 nm, blue emission at 452 nm and an extra weak defect-related green emission at 542 nm. UV–visible spectrophotometery was used to determine the absorption behavior of nanostructured MnO₂ and a direct optical band gap of 2.5 eV was acquired by Davis–Mott model. The magnetic properties of the products have been evaluated using vibrating sample magnetometer, which showed that MnO₂ nanowires exhibited a superparamagnetic behavior at room temperature. The magnetization versus temperature curve of the as-obtained MnO₂ nanowires shows that antiferromagnetic transition temperature is 99 K.     

Fabrication, morphology and structural characterization of ordered single-crystal Ag nanowires

Highly aligned Ag nanowires have been synthesized by dc electrodeposition within a hexagonal close-packed nanochannel anodic aluminum oxide template. The pore diameter varies from 20 nm to 50 nm depending on the anodization voltage and temperature for the two types of aqueous solutions, sulphuric and oxalic acids, respectively. The size and morphology of the Ag nanowire arrays were measured by scanning electron microscopy and transmission electron microscopy. The images indicate that the highly aligned Ag nanowires grow in the uniform nanochannels of the anodic alumina template and that the size of the nanowires depends on the size of the nanochannels. X-ray diffraction, selected area electron diffraction pattern and high-resolution transmission electron microscopy images show that the Ag nanowires are single-crystal. The temperature coefficient of resistivity (temperature range from 4.2 K to 300 K) of the Ag nanowire arrays decreases with decreasing diameter of the nanowires. Received: 5 November 2001 / Revised version: 12 March 2002 / Published online: 6 June 2002     

Synthesis and electrical characterization of tungsten oxide nanowires

Tungsten oxide nanowires of diameters ranging from 7 to 200~nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour--solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W₁₈O₄₉. I--V curves are measured by an \textit{in situ} transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the I--V curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I--V curves by using a metal--semiconductor--metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.     

Novel porous CuO microrods: synthesis,characterization, and their photocatalysis property

Porous copper oxide microrods have been synthesized via calcining copper glycinate monohydrate microrod precursor which was prepared in mild conditions without any template or additive. Several techniques, such as X-ray diffraction, field emission scanning electron microscopy, thermogravimetric analysis, Fourier transform infrared spectroscopy, and Brunauer–Emmett–Teller (BET) N₂ adsorption–desorption analyses, were used to characterize the structure and morphology of the products. Scanning electron microscopy (SEM) analyses show that the precursor consists of a large quantity of uniform rod-like micro/nanostructures with typical lengths in the range of 25–40 µm and diameters in the range of 0.1–0.35 µm. The microrod-like precursors transformed into porous microrod products after calcination at 450 °C in flow air for 2 h. The BET surface area of the porous CuO microrods was calculated to be 8.5 m² g⁻¹. In addition, the obtained porous CuO microrods were used as catalysts to photodegrade rhodamine B (RhB), methyl orange, methylene blue, eosin B, and p-nitrophenol. Compared with commercial CuO powders, the as-prepared porous CuO microrods exhibit superior properties on photocatalytic decomposition of RhB due to their porous hierarchical structures.     

Size-dependent chemical transformation,structural phase change,and optical properties of nanowires

Nanowires offer a unique approach for the bottom-up assembly of electronic and photonic devices with the potential of integrating photonics with existing technologies. The anisotropic geometry and mesoscopic length scales of nanowires also make them very interesting systems to study a variety of size-dependent phenomenon where finite-size effects become important. We will discuss the intriguing size-dependent properties of nanowire systems with diameters in the 5–300?nm range, where finite-size and interfacial phenomena become more important than quantum mechanical effects. The ability to synthesize and manipulate nanostructures by chemical methods allows tremendous versatility in creating new systems with well-controlled geometries, dimensions, and functionality, which can then be used for understanding novel processes in finite-sized systems and devices.     

Novel structures and properties of gold nanowires

The structures of free-standing gold nanowires are studied by using molecular-dynamics-based genetic algorithm simulations. Helical and multiwalled cylindrical structures are found for the thinner nanowires, while bulk-like fcc structures eventually form in the thicker nanowires up to 3 nm in diameter. This noncrystalline-crystalline transition starts from the core region of nanowires. The vibrational, electronic, and transport properties of nanowires are investigated based on the optimal structures. Bulklike behaviors are found for the vibrational and electronic properties of the nanowires with fcc crystalline structure. The conductance of nanowires generally increases with wire diameter and depends on the wire structure.