Structural and electrical properties of chemical solution deposited (Bi0.9Tb0.1)(Fe0.975 TM 0.025)O3±δ (TM = Ni, Mn and Ti) thin films

Effects of Tb and transition metal (TM = Ni, Mn and Ti) ions co-doping on the structural, electrical and ferroelectric properties of the BiFeO₃ thin films prepared by using a chemical solution deposition method were reported. From X-ray diffraction and Raman scattering analyses, distorted rhombohedral perovskite structures were observed for all thin films. Improved electrical and ferroelectric properties were observed for the co-doped thin films. Among the thin films, the lowest leakage current density of 2.67 × 10^?6 A/cm² (at 100 kV/cm), large remnant polarization (2P _r ) of 82.2 μC/cm² and low coercive field (2E_c) of 680 kV/cm (at 1,036 kV/cm) were measured for the (Tb, Mn) co-doped thin film.     

Preparation and properties of rare earth (Eu, Tb, Ho) and transition metal (Co) co-doped BiFeO3 thin films

Ferroelectric (Bi_0.9 RE _0.1)(Fe_0.975Co_0.025)O_3-δ (RE = Eu, Tb and Ho) thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates via a chemical solution deposition method. All thin films were crystallized in a distorted rhombohedral perovskite structure confirmed by using an X-ray diffraction and a Raman scattering analyses. Compared to the pure BiFeO₃ thin film, improved electrical and ferroelectric properties were observed for the co-doped thin films. Among the thin films, the lowest leakage current density of 4.28 × 10^?5 A/cm² was measured at an applied electric field of 100 kV/cm for the (Bi_0.9Ho_0.1)(Fe_0.975Co_0.025)O_3-δ thin film. This value is approximately three orders lower than that of the pure BFO thin film. Furthermore, a large remnant polarization (2P _r) of 60.2 μC/cm² and a low coercive field (2E _c ) of 561 kV/cm at 980 kV/cm were observed from the (Bi_0.9Ho_0.1)(Fe_0.975Co_0.025)O_3-δ thin film.     

Enhanced ferroelectric,dielectric and leakage properties in Ce and Ti co-doping BiFeO3 thin films

Pure BiFeO₃ (BFO), Ce and Ti individual doping and co-doping BiFeO₃ thin films were fabricated via sol–gel process on Pt/Ti/SiO₂/Si substrates. The microstructure, surface morphology, ferroelectric and dielectric properties of BFO and doped thin films were investigated in detail. X-ray diffraction reveal that all thin films are confirmed the formation of the distorted rhombohedral perovskite structure. No impure phase is identified in all the films. The Ce and Ti co-doping BiFeO₃ (BCFTO) thin films exhibited the enhanced ferroelectricity with a large remnant polarization (2P _r) of 130 μC/cm², and low leakage current density of 9.10 × 10^?6 A/cm² which is more than two orders of magnitude lower than that of pure BFO films at 100 kV/cm. The dielectric constant (364 at 1 kHz) of the BCFTO thin films is much larger than that of pure BFO thin films. These results suggest that the introductions of Ce and Ti provides an effective route for improving the ferroelectric, dielectric and leakage properties of BFO thin films.     

Frequency dependent ferroelectric and electrical properties of (Ho, Ni) co-doped BiFeO3 thin films

We have evaluated the ferroelectric and electrical properties of pure BiFeO₃ (BFO) and (Bi_0.9Ho_0.1)(Fe_1?xNi_x)O_3?δ (BHFN_xO, x = 0.01, 0.02, and 0.03) thin films as frequency varying from 1 to 50 kHz on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. With the frequency from 1 to 10 kHz, the decrease of remnant polarization (2P _r ) of the BHFN_0.02O thin film was about 27 %, from 26 to 19 μC/cm², which is one half lower than those of the BHFN_xO (x = 0.01 and 0.03) thin films. Otherwise, the variation of the coercive electric field (2E _c ) was relatively small, which were 16, 11 and 3 % for the BHFN_xO (x = 0.01, 0.02, and 0.03) thin films. The remnant polarization (2P _r ) and the coercive electric field (2E _c ) values of the BHFN_0.02O thin film show the dependence of measurement frequency and it has been fairly saturated about 30 kHz. Also, the leakage current density of the co-doped BHFN_0.02O thin film showed three orders lower than that of the pure BFO, 2.14 × 10^?6 Å/cm² at 100 kV/cm.     

Effect of Tb content on microstructure and ferroelectric properties of Bi4−x Tb x Ti3O12 thin films grown by sol–gel method

The effects of Tb substitution on the structural and electrical properties of ferroelectric Bi₄Ti₃O₁₂ (BTO) thin films grown on Pt/TiO₂/SiO₂/Si substrates by a sol–gel process have been reported. X-ray diffraction indicated A-site Tb substitutions did not change the polycrystalline bi-layered Aurivillius structure of the BTO, but a lattice distortion was observed. The leakage current behavior at room temperature of the films was studied and it was found that the leakage current density decreased from 10^?2 to 10^?4 A/cm² with the increase of x under 150 kV/cm. The remnant polarization (2P _r ) and dielectric constant (ε _r) increase firstly and then decreases with the increase of the Tb content. We observed a substantial increase in the remnant polarization (2P _r ) with Tb substitution and obtained a maximum value of~60 μC/cm² at an applied electric field of 500 kV/cm for x = 0.4. Moreover, this BTT-0.4 capacitor did not show fatigue behaviors after 1.0 × 10¹⁰ switching cycles, suggesting an anti-fatigue character.     

Effect of Li- and Ta-doping on the ferroelectric properties of Na0.5K0.5NbO3 thin films prepared by a chelate route

The effects of lithium and tantalum doping on the properties of Na_0.5K_0.5NbO₃ (NKN) thin films were investigated. The films were fabricated by an optimized chelate route which offers the advantage of a simple and rapid solution synthesis. The optimization was achieved by investigating the effects of alkaline volatilization loss on film properties. In this way, undoped NKN thin films fabricated by this conventional method exhibited good ferroelectric properties (P_r ~ 8 μC/cm², and E_c ~ 55 kV/cm for films annealed at 650 °C). The developed chelate route was then used to grow Li (5 %) and Ta (10 %) substituted thin films. Such structures allowed us to compare the effect of these dopant cations on phase formation, microstructure and ferroelectric properties. We show that both modifications produced a remarkable improvement on the ferroelectricity of the films. While the undoped material exhibited large leakage components in films annealed at 600 °C, films modified with Li or Ta presented well saturated ferroelectric hysteresis loops, indicating that those ions have a significant influence on the conducting process. The remnant polarizations of the Ta-doped films are greater than those of the Li-doped samples. This feature is however reversed for films annealed at low temperature (600 °C) due to the presence of a non-ferroelectric secondary phase in the Ta-doped composition.     

High performance distributed CPW phase shifters with etched BST thin films on Ф 3″ LaAlO3 substrates

The design, fabrication and microwave properties of distributed coplanar waveguide (CPW) phase shifters using etched Ba_0.6Sr_0.4TiO₃ (BST) thin films on Ф 3″ LaAlO₃ (100) substrates were investigated. The BST thin films employed in the circuits are deposited by RF magnetron sputtering, and then annealed at 800 °C for 30 min in air. BST thin films parallel-plate capacitors were fabricated by photolithography and etching process. At 10 kHz and 600 kV/cm electric field, the dielectric tunability, remanent polarization (2P_r) and the coercive electric field (2E_C) of BST film were 28.7%, 2.265 μC/cm² and 38.8 kV/cm, respectively. The loss tangent was 0.005 at zero electric field. The CPW phase-shifter designed was subsequently fabricated by optimum BST thin films and thickened top electrodes. At 21.3 GHz and 35 V, 360° phase shift was achieved, the insertion loss was −8.5 dB, the ?gure-of-merit (FOM) was 42.4°/dB, and the return loss was −12.1 dB.     

Ba Titanate and Barium/Strontium Titanate Thin Films from Hydroxide Precursors: Preparation and Ferroelectric Behavior

Randomly oriented ferroelectric BaTiO₃ and (Ba_0.6Sr_0.4) TiO₃ thin films on platinum coated Si (100) were prepared by a sol-gel method. The precursor solutions were derived from barium hydroxide or a mixture of barium/strontium hydroxides dissolved in acetic acid and titanium butoxide. Polarization versus applied voltage hysteresis studies indicated a remanent polarization of 3 µC/cm² and a coercive field of 43.4 kV/cm for BaTiO₃ films annealed at 800°C for 1 h. Corresponding parameters for (Ba_0.6Sr_0.4)TiO₃ films annealed at 800°C were found to be 7.2 µC/cm² and 102.7 kV/cm, respectively. Microstructural study of the surface morphology of these films indicated grains of less than 0.1 µm in size. The leakage current for (Ba_0.6Sr_0.4)TiO₃ films was found to be two orders of magnitude lower than that for BaTiO₃ films.     

Preparation and nonlinear optical properties of Au nanoparticles doped TiO2 thin films

Nano-sized noble metal nanoparticles doped dielectric composite films with large third-order nonlinear susceptibility due to the confinement and the enhancement of local field were considered to be applied for optical information processing devices, such as optical switch or all optical logical gates. In this paper, sol–gel titania thin films doped with gold nanoparticles (AuNPs, ~10 nm in average size) were prepared. AuNPs were firstly synthesized from HAuCl₄ in aqueous solution at ~60 °C, using trisodium citrate as the reducing agent, polyvinylpyrrolidone as the stable agent; then the particle size and optical absorption spectra of the AuNPs in aqueous solutions were characterized by transmitting electron microscopy and UV–Vis–NIR spectrometry. Sol–gel 2AuNPs–100TiO₂ (in %mol) thin films (5 layers, ~1 μm in thickness) were deposited on silica glass slides by multilayer dip-coating. After heat-treated at 300–1,000 °C in air, the AuNPs–TiO₂ thin films were investigated by X-ray diffraction, scanning electron microscopy and atomic force microscopy. The nonlinear optical properties of the AuNPs–TiO₂ thin films were measured with the Z-scan technique, using a femtosecond laser (200 fs) at the wavelength of 800 nm. The third-order nonlinear refractive index and nonlinear absorption coefficient of 2AuNPs–100TiO₂ films were at the order of 10^?12 cm²/W, and the order of 10^?6 cm/W, respectively, and the third-order optical nonlinear susceptibility χ⁽³⁾ was ~6.88 × 10^?10 esu.     

Effect of BiFeO3 doping on ferroelectric properties of Na0.5Bi0.5TiO3–BaTiO3 based thin film derived by sol–gel method

0.94Na_0.5Bi_0.5TiO₃–0.06BaTiO₃ (NBT–6BT) and (0.94 ? x)Na_0.5Bi_0.5TiO₃–0.06BaTiO₃–xBiFeO₃ (NBT–6BT–xBFO, x = 0.03, 0.05 and 0.08) thin films were deposited on Pt/Ti/SiO₂/Si substrates by a sol–gel process. Relative permittivity and remnant polarization were maximized at 5 % BFO substitution. Compared with 0.94NBT–0.06BT, the leakage current density of 0.89NBT–0.06BT–0.05BFO at 600 kV/cm is reduced by one order of magnitude. Enhanced ferroelectricity was also achieved in 0.89NBT–0.06BT–0.05BFO, the remnant polarization (2P _r) values of 0.89NBT–0.06BT–0.05BFO and 0.94NBT–0.06BT are 46 and 24 µC/cm².     

Microstructure and electrical properties of lead zirconate titanate thin films deposited by sol-gel method on La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript>/SiO<Subscript>2</Subscript>/Si substrate

(La_0.7Sr_0.3)MnO₃ thin films were deposited on SiO₂/Si substrates by a metal-organic decomposition (MOD) method, and then Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films were grown on (La_0.7Sr_0.3)MnO₃-coated SiO₂/Si substrates by a sol-gel method. The effects of annealing temperature on the crystalline phases, microstructures and electrical properties of the PZT films were investigated. X-ray diffraction analysis results indicated that the PZT films with a perovskite single phase could be obtained by annealing at 650°C. The dielectric constant and the remnant polarization of the PZT films increased with increasing annealing temperature. The remnant polarization and the coercive field of the films annealed at 650°C were 18.3 μC/cm² and 35.5 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 1100 and 0.81, respectively.     

Structure and dielectric properties of 80%Pb(Zn1/3Nb2/3)O3–20%PbTiO3 thin films prepared by modified sol–gel process

80%Pb(Zn_1/3Nb_2/3)O₃–20%PbTiO₃ (PZN–PT) thin films have been prepared on Pt/Ti/SiO₂/Si substrates using a modified sol–gel method. In our method, niobium pentaoxide is used as a substitution instead of niobium ethoxide which is moisture-sensitivity and much more expensive. Microstructure and electrical properties of PZN–PT thin films have been investigated. X-ray diffraction analysis shows that proper annealing temperature of PZN–PT thin films is 600 °C. The PZN–PT thin films annealed at 600 °C are polycrystalline with (111)-preferential orientations. Field-emissiom scanning electron microscope analysis revealed PZN–PT thin films possess well-defined and crack-free microstructure. The thickness of thin films is 290 nm. The Pt/PZN–PT/Pt capacitors have been fabricated and it presents ferroelectric nature. The remanent polarization (Pr), spontaneous polarization (Ps), and the coercive electric field (Ec) are 8.71 μC/cm², 43.06 μC/cm², and 109 kV/cm at 1 MHz, respectively. The dielectric constant (ε_r) and the dissipation factor (tan δ) are about 500.3 and 0.1 at 1 kHz, respectively.     

The influence of film thickness and process temperature on <Emphasis Type="Italic">c</Emphasis>-axis orientation of Bi<Subscript>3</Subscript>TiTaO<Subscript>9</Subscript> thin films

Bi-layered ferroelectric Bi₃TiTaO₉ (BTT) thin films with different thickness (ranging from 100 to 400 nm) were successfully fabricated on Pt(111)/TiO₂/SiO₂/(100)Si substrates using chemical solution deposition (CSD) technique at different annealing temperatures. The c-axis orientation of the films was affected by film thickness and process temperature. The thinner the film and the higher the process temperature, the higher the c-axis orientation. With the increase of film thickness, the stress decreased but the film roughness increased, which led to the decrease of c-axis orientation of films. BTT films annealed at 800°C were found to have much improved remament polarization (P _r ) than that of films annealed at 650 and 750°C. The P _r and coercive field (E _c ) values were measured to be 2 μC/cm² and 100 kV/cm, respectively. BTT films showed well-defined ferroelectric properties with grain size larger than 100 nm.     

Dielectric properties and I-V characteristics of (Pb<Subscript>0.4</Subscript>Sr<Subscript>0.6</Subscript>)TiO<Subscript>3</Subscript> thin films improved by TiO<Subscript>2</Subscript> buffer layers

A TiO₂ thin buffer layer was introduced between the (Pb_0.4Sr_0.6)TiO₃ (PST) film and the Pt/Ti/SiO₂/Si substrate in an attempt to improve their electrical properties. Both TiO₂ and PST layers were prepared by a chemical solution deposition method. It was found that the TiO₂ buffer layer increased the (100)/(001) preferred orientation of PST and decreased the surface roughness of the films, leading to an enhancement in electrical properties including an increase in dielectric constant and in its tunability by DC voltage, as well as a decrease in dielectric loss and leakage current density. At an optimized thickness of the TiO₂ buffer layer deposited using 0.02 mol/l TiO₂ sol, the 330-nm-thick PST films had a dielectric constant, loss and tunability of 1126, 0.044 and 60.7% at 10 kHz, respectively, while the leakage current density was 1.95 × 10⁻⁶ A/cm² at 100 kV/cm.     

Preparation of highly (111)-oriented (Pb,La)(Zr,Sn,Ti)O<Subscript>3</Subscript> (PLZST) antiferroelectric thin films by modified sol-gel process using a novel tin source,dibutyloxide of tin

Highly (111)-oriented Pb_0.97La_0.02Zr_0.85Sn_0.13 Ti_0.02O₃(PLZST) antiferroelectric thin films were deposited on Pt(111)/Ti/SiO₂/Si(100) substrates through a modified sol-gel process technique. The electric field-induced antiferroelectric-to-ferroelectric (AFE‐FE) phase transformation behaviour was examined by C-V measurement. The results indicated that antiferroelectric (AFE) to ferrroelectric (FE) switching field , FE to AFE switching field were 315 kV/cm and 240 kV/cm respectively. The temperature dependence of the dielectric constant showed that the Curie temperature (T _c) of the PLZST antiferroelectric thin films was 171°C. The voltage dependent current density of the highly (111)-oriented PLZST film was less than 1.3 × 10⁻⁶ A/cm² over electric field range from 0 to ± 427 kV/cm.     

Enhanced lithium-ion intercalation and conduction of transparent tantalum oxide films by lithium addition with an atmospheric pressure plasma jet

An investigation is conducted on enhancing lithium-ion intercalation and conduction performance of transparent organo tantalum oxide (TaO _y C _z ) films, by addition of lithium via a fast co-synthesis onto 40 Ω/□ flexible polyethylene terephthalate/indium tin oxide substrates at the short exposed durations of 33–34 s, using an atmospheric pressure plasma jet (APPJ) at various mixed concentrations of tantalum ethoxide [Ta(OC₂H₅)₅] and lithium tert-butoxide [(CH₃)₃COLi] precursors. Transparent organo-lithiated tantalum oxide (Li _x TaO _y C _z ) films expose noteworthy Li⁺ ion intercalation and conduction performance for 200 cycles of reversible Li⁺ ion intercalation and deintercalation in a 1 M LiClO₄-propylene carbonate electrolyte, by switching measurements with a potential sweep from ?1.25 to 1.25 V at a scan rate of 50 mV/s and a potential step at ?1.25 and 1.25 V, even after being bent 360° around a 2.5-cm diameter rod for 1000 cycles. The Li⁺ ionic diffusion coefficient and conductivity of 6.2?×?10^?10 cm²/s and 6.0?×?10^?11 S/cm for TaO _y C _z films are greatly progressed of up to 9.6?×?10^?10 cm²/s and 7.8?×?10^?9 S/cm for Li _x TaO _y C _z films by co-synthesis with an APPJ.     

Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology

Structural and electrical properties of HfO₂ gate-dielectric metal-oxide-semiconductor (MOS) capacitors deposited by sputtering are investigated. The HfO₂ high-k thin films have been deposited on p-type <100> silicon wafer using RF-Magnetron sputtering technique. The Ellipsometric, FTIR and AFM characterizations have been done. The thickness of the as deposited film is measured to be 35.38 nm. Post deposition annealing in N₂ ambient is carried out at 350, 550, 750 °C. The chemical bonding and surface morphology of the film is verified using FTIR and AFM respectively. The structural characterization confirmed that the thin film was free of physical defects and root mean square surface roughness decreased as the annealing temperature increased. The smooth surface HfO₂ thin films were used for Al/HfO₂/p-Si MOS structures fabrication. The fabricated Al/HfO₂/p-Si structure had been used for extracting electrical properties such as dielectric constant, EOT, interface trap density and leakage current density through capacitance voltage and current voltage measurements. The interface state density extracted from the G–V measurement using Hill Coleman method. Sample annealed at 750 °C showed the lowest interface trap density (3.48 × 10¹¹ eV⁻¹ cm⁻²), effective oxide charge (1.33 × 10¹² cm⁻²) and low leakage current density (3.39 × 10⁻⁹ A cm⁻²) at 1.5 V.     

Transparent conductive tungsten-doped tin oxide thin films synthesized by sol–gel technique on quartz glass substrates

Transparent conductive tungsten-doped tin oxide (SnO₂:W) thin films were synthesized on quartz glass substrates by sol–gel dip-coating method. It was found that the films were highly transparent and the average optical transmission was about 90% in the visible and near infrared region from 400 to 2,500 nm. The optical band gap is about 4.1 eV. The lowest resistivity of 5.8 × 10^?3 ohm cm was obtained, with the carrier mobility of 14.2 cm² V^?1 s^?1 and carrier concentration of 7.6 × 10¹⁹ cm^?3 in 3 at.% W-doping films annealed at 850 °C in air. The structural properties, surface morphology and chemical states for the films were investigated.     

One-step hydrothermal synthesis of marigold flower-like nanostructured MoS<Subscript>2</Subscript> as a counter electrode for dye-sensitized solar cells

MoS₂ thin films with marigold flower-like nanostructures were grown on conductive fluorine-doped tin oxide (FTO) substrates through a one-step hydrothermal synthesis for their application as counter electrodes (CEs) in dye-sensitized solar cells (DSSCs). Different MoS₂ thin film samples (A–D) were grown on FTO slides using different concentrations of precursors (sodium molybdate and thioacetamide), while keeping the Mo/S molar ratio constant (1:4.6), in all samples. The effect of varying precursor concentrations (3.2–12.6 mM on MoS₂ basis) on the structure of the nanostructured thin films and their performance as DSSC-CEs was investigated. Scanning electron microscopy revealed a material with an infolded petal-like morphology. With increasing precursor concentration, the petal-like structures tended to form bunched nanostructures (100–300 nm) resembling marigold flowers. X-ray diffraction analysis, X-ray photoelectron, and Raman spectroscopy studies showed that the thin films were composed of hexagonal MoS₂ with good crystallinity. Hall effect measurements revealed MoS₂ to be a p-type semiconductor with a carrier mobility of 219.80 cm² V^?1 s^?1 at room temperature. The electrochemical properties of the thin films were examined using cyclic voltammetry and electrochemical impedance spectroscopy. The marigold flower-like MoS₂ thin films showed excellent electrocatalytic activity towards the I¯/I₃¯ reaction and low charge transfer resistance (R_ct) values of 14.77 Ω cm^?1, which was close to that of Pt electrode (12.30 Ω cm^?1). The maximum power conversion efficiency obtained with MoS₂ CE-based DSSCs was 6.32%, which was comparable to a Pt CE-based DSSC (6.38%) under one sun illumination. Similarly, the maximum incident photon-to-charge carrier efficiency exhibited by MoS₂ CE-based DSSCs was 65.84%, which was also comparable to a Pt CE-based DSSC (68.38%). The study demonstrated that the marigold flower-like nanostructured MoS₂ films are a promising alternative to the conventional Pt-based CEs in DSSCs.

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Barium Sodium Niobate Powders and Thin Films: Preparation and Ferroelectric Behavior

Powders and thin films of barium sodium niobate, Ba₄Na₂Nb₁₀O₃₀, of filled tungsten bronze type ferroelectric were processed by a sol-gel route using barium metal, niobium ethoxide and sodium methoxide as precursors. Polycrystalline powder resulted after heat treating the gel powder at or above 650°C. Thin films of Ba₄Na₂Nb₁₀O₃₀ showed no preferred orientation on Si(100), Pt/Si(100) and sapphire substrates. Hysteresis measurements at 1 kHz for the thin films annealed at 750°C, obtained using a prehydrolyzed precursor solution, and gave remanent polarization of 17.34 µC/cm² and coercive field of 62.5 kV/cm. Microstructural investigation of surface morphology of these films revealed grains about 0.3 µm in size. Prehydrolysis of the precursor solution was found to be necessary to achieve dense films with ferroelectric properties.