Oxygen incorporation in polyethylene implanted with 150 keV Sb+ ions

Samples of polyethylene (PE) loaded with carbon black up to 8 wt.% and implanted with 150 keV Sb⁺ ions to the doses from 2×10¹³–2×10¹⁵ cm^–2 were studied using standard Rutherford Back Scattering (RBS) technique. On the PE samples implanted to the doses above 2×10¹⁴ cm^–2, a considerable surface carbonization is observed. The measured parameters of the Sb depth profile are compared with theoretical TRIM estimations. The projected range is by 25% lower than the theoretical one and the range straggling is about twice of that predicted. The differences are explained by stepwise polymer degradation during the ion bombardment. Strong oxidation of the ion implanted polymers is also observed. The oxygen depth profiles from the sample surface up to the depth comparable with Sb⁺ ion range evolve from nearly uniform one for low ion doses to highly non-uniform one for doses above 1×10¹⁵ cm^–2. The total oxygen content in the sample surface layer 300 nm thick reaches a maximum for the doses of (1–2)×10¹⁴ cm^–2.On leave from Belorussian State University, 220050 Minsk, Belarus.The authors thank the member of electrostatic accelerator group at INP for help during RBS measurements. The work was partly (V.H. and J.K.) supported by the Internal Grant Agency of the Academy of Sciences of Czech Republic under the grant No. 14805 and by the Internal Grant Agency of the Ministry of Education of Czech Republic under the grant No. 1002 (V.., V.R., V.H. and J.K.). In the final stage, the work was also supported by the Grant Agency of Czech Republic under the grant No. 202/93/0121.     

Structural phenomena in glassy carbon induced by cobalt ion implantation

Glassy carbon (GC) was implanted by 150 keV Co⁺ ions to the doses of 1×10¹⁶ (low dose) and 1×10¹⁷ ions/cm² (high dose). The low dose implantation results in GC structure disordering with formation of amorphous carbon (a-C). Analysis of Rutherford backscattering (RBS) and Raman spectra has revealed 15 at.% of sp³-bonded C atoms in the a-C structure. The in-pane size of sp² clusters was estimated to be 1.1 nm. On the contrary, the high dose ion implantation results in ordering of the a-C structure. Content of the sp³ atoms in a-C was reduced to about 5% and, respectively, the in-plane sp² cluster size was increased up to 2.8 nm. Together with the a-C structure ordering the Raman spectra identifies formation of transpolyacetylene (TPA)-like chains after the high-dose Co⁺ implantation. In parallel, RBS suggests an enhanced diffusion of the implanted cobalt within the modified carbon layer. Correlation of the RBS and Raman results argues a driving role of cobalt diffusion in the TPA-like chains formation and a-C ordering. Great surface roughening observed after the high dose Co⁺ implantation suggests also the pronounced cobalt clustering causing large flux of “free volume” to the surface.     

Quantum chemical study of the properties of an SiO<Subscript>2</Subscript>/Si(100) interface implanted with boron ions

Quantum-chemical calculations of the properties of a B⁺ ion-implanted SiO₂/Si(100) interface are presented. Dependencies of the total energy of a B⁺ ion cluster system on the location of B⁺ ions in oxygen and silicon vacancies are calculated, along with the geometric and electronic characteristics of the equilibrium cluster states with implanted boron ions.     

Damage depth-profiling of Au+ and O+-irradiated amorphous PEEK by monoenergetic positron beams

+ and O⁺ ions was exposed to positron beams to measure the positron annihilation Doppler broadening as a function of the positron energy. As in the previous case of O⁺-irradiated semicrystalline PEEK, the annihilation lines recorded at relatively low positron energies became broader with increasing irradiation dose. The thickness of the damaged layer estimated from the positron data was compared with the mean depth of the implanted ions calculated by the TRIM code. For the Au⁺-irradiated samples, some discrepancy was observed between the two quantities. Received: 6 March 1996/Accepted: 19 November 1996     

Magnetic Properties of Thin Metal-Polymer Films Prepared by High-Dose Ion-Beam Implantation of Iron and Cobalt Ions into Polyethylene Terephthalate

Thin metal-polymer composite films have been prepared by high-dose ion-beam implantation of Fe⁺ and Co⁺ ions into polyethylene terephthalate. The implantation of 40 keV ions at room temperature with doses from 2 · 10¹⁶ to 4 · 10¹⁷ cm⁻² have been performed, with the ion current density of 4 μA/cm². The effects of implantation dose on the film morphology and crystal structure have been investigated via atomic force and magnetic force microscopy and X-ray diffraction. The magnetic properties of synthesized structures have been studied by ferromagnetic resonance and with a vibrating-sample magnetometer. It was established that the properties of ion-implanted samples strongly depend on both the implantation dose and the type of implanted ions. The implantation dose at which the magnetic phase is formed for iron-implanted samples is significantly lower than that for cobalt-implanted ones. At high implantation doses due to polymer sputtering metal-containing layers are formed close to the sample surface for both ions. In this dose range the magnetic properties of implanted samples changed dramatically due to particle oxidation. The coercivity of synthesized layers reaches 180 and 300 Oe for iron- and cobalt-implanted samples, respectively. Authors' address: Vladimir Yu. Petukhov, Kazan Physical-Technical Institute, Sibirskii trakt 10/7, 420029 Kazan, Russian Federation     

Surface nano-structural modifications and characteristics in nitrogen ion implanted W as a function of temperature and N energy

The surface modifications of tungsten massive samples (0.5 mm foils) made by nitrogen ion implantation are studied by SEM, XRD, AFM, and SIMS. Nitrogen ions in the energy range of 16-30 keV with a fluence of 1 × 10¹⁸ N⁺ cm⁻² were implanted in tungsten samples for 1600 s at different temperatures. XRD patterns clearly showed WN₂ (0 1 8) (rhombohedral) very close to W (2 0 0) line. Crystallite sizes (coherently diffracting domains) obtained from WN₂ (0 1 8) line, showed an increase with substrate temperature. AFM images showed the formation of grains on W samples, which grew in size with temperature. Similar morphological changes to that has been observed for thin films by increasing substrate temperature (i.e., structure zone model (SZM)), is obtained. The surface roughness variation with temperature generally showed a decrease with increasing temperature. The density of implanted nitrogen ions and the depth of nitrogen ion implantation in W studied by SIMS showed a minimum for N⁺ density as well as a minimum for penetration depth of N⁺ ions in W at certain temperatures, which are both consistent with XRD results (i.e., I_{W (2 0 0)}/I_{W (2 1 1)}) for W (bcc). Hence, showing a correlation between XRD and SIMS results.     

Damage formation in Ge during Ar and He implantation at 15 K

Ar⁺ and He⁺ ions were implanted into Ge samples with (1 0 0), (1 1 0), (1 1 1) and (1 1 2) orientations at 15 K with fluences ranging from 1×10¹¹ to 1×10¹⁴ cm⁻² for the Ar⁺ ions and fluences ranging from 1×10¹² to 6×10¹⁵ cm⁻² for the He⁺ ions. The Rutherford backscattering (RBS) technique in the channelling orientation was used to study the damage built-up in situ. Implantation and RBS measurements were performed without changing the target temperature. The samples were mounted on a four axis goniometer cooled by a close cycle He cryostat. The implantations were performed with the surface being tilt 7° off the ion beam direction to prevent channelling effects. After each 300 keV Ar⁺ and 40 keV He⁺ implantation, RBS analysis was performed with 1.4 MeV He⁺ ions.For both the implantation ions, there is about no difference between the values found for the damage efficiency per ion for the four different orientations. This together with the high value (around 5 times higher than that found in Si), gives rise to the assumption of amorphous pocket formation per incident ion, i.e. direct impact amorphization, already at low implantation fluences. At higher fluences, when collision cascades overlap, there is a growth of the already amorphized regions.     

Localization of carbon atoms and extended defects in silicon implanted separately with C+ and B+ ions and jointly with C+ and B+ ions

The possibility to control the localization of implanted carbon in sites and interstices in silicon immediately during the implantation has been demonstrated. The formation of residual extended defects in silicon implanted separately with C⁺ and B⁺ ions and jointly with C⁺ and B⁺ ions has been shown. It has been found that the formation of residual defects can be suppressed due to annihilation of point defects at C atoms (the Watkins effect). The positive effect is attained if implanted carbon is localized over lattice sites, which is provided by its implantation with the effective current density of the scanning ion beam no lower than 1.0 μA cm^?2.     

Compound synthesis in TiO2 implanted with Rubidium

Rubidium ions, with energy in the range 0.1 MeV, 2.0 MeV have been implanted in TiO₂ single crystals at RT and LNT.

Defects induced by implantation have been studied by optical spectroscopy, X-ray diffraction, RBS, TEM and electrical conductivity.

During implantation, the implanted samples are blue colored after irradiation. This coloration is due to an optical absorption band localized at 900 nm which corresponds to optical transition of intrinsic defects identified as Ti³⁺. These defects are induced by a chemical reaction between the implanted ions and the oxygen of the lattice as in the case of D⁺, H⁺, Li⁺, Na⁺ and K⁺ implanted in rutile.^1-3

The synthesis of a new phase in heavily implanted rutile is exhibited by using a thermal treatment and by combining techniques such as RBS, TEM and X-ray diffraction at glancing angle in the temperature range 300°C-700°C.

This compound does not correspond to metallic precipitates of rubidium which are observed in MgO implanted with Rb ions.

Planar defects have been observed in the implanted area. A correlation is exhibited between these defects and the precipitates of the new phase. From X-ray diffraction measurements and TEM observations, the composition of the synthetized compound is likely Rb₂TiO₃.     

Defects formation in the dual B+ and N+ ions implanted silicon

Silicon wafers were implanted with 40 keV B⁺ ions (to doses of 1.2×10¹⁴ or 1.2×10¹⁵ cm^–2) and 50 or 100 keV N⁺ ions (to doses from 1.2×10¹⁴ to 1.2×10¹⁵ cm^–2). After implantations, the samples were furnace annealed at temperatures from 100 to 450 °C. The depth profiles of the radiation damages before and after annealing were obtained from random and channeled RBS spectra using standard procedures. Two damaged regions with different annealing behaviour were found for the silicon implanted with boron ions. Present investigations show that surface disordered layer conserves at the annealing temperatures up to 450 °C. The influence of preliminary boron implantation on the concentration of radiation defects created in subsequent nitrogen implantation was studied. It was shown that the annealing behaviour of the dual implanted silicon layers depends on the nitrogen implantation dose.The authors would like to thank the members of the INP accelerator staff for the help during the experiments. The work of two authors (V.H. and J.K.) was partially supported by the Internal Grant Agency of Academy of Science of Czech Republic under grant No. 14805.     

Interference of arsenic diffusion by argon implantation

In the study of ion implantation, electrically active ions or noble gas ions are often used for damage study, range profiling, etc. Very seldom are both electrically active ions and noble gas ions implanted at about the same depth. In the work reported here, argon and arsenic ion implants and their interference in diffusion were studied by using backscattering, electrical measurements, and transmission electron microscopy (TEM). Several unexpected phenomena were observed.

First, when both Ar and As are implanted in high doses (about 10¹⁶/cm²), at depths around a few hundred nanometers, the Ar significantly hampers the As diffusion, and the As prevents the outdiffusion of the Ar. The interference occurs regardless of which ion is implanted first.

Second, when Si wafers uniformly doped with about 4 × 10¹⁹ As/cm³ are ion-implanted with log¹⁶ Ar/cm² at 130 keV, the As atoms stay uniformly distributed. When the sample is annealed at a temperature between 900 and 1100°C in a nitrogen ambient, however, double peaks for both Ar and As are observed by backscattering. The nonuniform distribution of As after the heat treatment of the uniformly distributed As is puzzling.

Finally, the As profile for an As capsule diffused on a silicon wafer is greatly altered when the wafer has been pre-implanted with Ar. Arsenic atoms tend to build up at the same depth as the Ar atoms.

Several other observations concerning Ar and As are equally puzzling. This paper discusses the observations and some plausible explanations.     

RBS analysis of ions implanted in light substrates exposed to hot plasmas laser-generated at PALS

Ge and Ta ion implantation of silicon and carbon substrates has been obtained at PALS Research Laboratory in Prague by using laser pulses of 400 ps duration, 438 nm wavelength, 10^14?16 W/cm² intensity. Substrates were exposed in vacuum at different distances from the target and at different angles with respect to the normal to the target surface. ‘On line’ measurements of ion energy were obtained with time-of-flight techniques by using an electrostatic deflector as ion energy analyzer. ‘Off line’ measurements of ion energy were obtained by Rutherford backscattering spectrometry (RBS) of 2.25 MeV He²⁺ beam at CEDAD Laboratory of Lecce University. The RBS spectra have given the depth profiles of the ion-implanted species and the implanted doses as a function of the laser intensity, angular position and target distance. A spectra deconvolution method based on the ion stopping power in the substrate matrix was applied in order to evidence the energy of the implanted ions. Measurements indicate that ions with energy ranging between 100 keV and 10 MeV and dose of the order of 10^14?16/cm² are implanted and that the process of ion implantation occurs mainly in substrates placed at little angles with respect to the normal to the target surface. Only a thin film deposition occurs for substrates placed at large angles with respect to the normal direction. Results indicate that the ion energies measured with the ‘on line’ and the ‘off line’ techniques are in good agreement.     

2.0-MeV Er+ implanted in silicon: depth distribution, damage profile and annealing behaviour

Si crystals were implanted with 2.0- MeV Er⁺ at the doses of 5×10¹² ions/cm², 1×10¹⁴ ions/cm², 5×10¹⁴ions/cm², 1×10¹⁵ ions/cm² and 2.5×10¹⁵ ions/cm². Conventional furnace thermal annealing was carried out in the temperature range from 600 °C to 1150 °C. The depth distribution of Er, associated damage profiles and annealing behavioar were investigated using the Rutherford backscattering spectrometry and channelling (RBS/C) technique. A proper convolution program was used to extract the distribution of Er from the experimental RBS spectrum. The obtained distribution parameters, projected range R_p, projected range straggling ΔR_p and skewness SK were compared with those of TRIM96 calculation.The experimental R_p and SK values agree well with the simulated values, while the experimental ΔR_p is larger than TRIM 96 simulated value by a factor of 18%. The damage profile of silicon crystal induced by 2.0-MeV Er⁺ at a dose of 1×10¹⁴ ions/cm² was extracted using the multiple-scattering dechannelling model based on Feldman’s method, which is in a good agreement with the TRIM96 calculation. For the samples with dose of 5×10¹⁴ ions/cm² and more, an abnormal annealing behavioar was found and a qualitative explaination has been given. Received: 11 October 1999 / Accepted: 28 March 2000 / Published online: 5 July 2000     

Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation

The effect of gamma irradiation on the interface states of ion-implanted MOS structures is studied by means of the thermally stimulated charge method. 10-keV oxygen- or boron- (O⁺ or B⁺) implanted samples are gamma-irradiated with ⁶⁰Co. Gamma irradiation creates electron levels at the SiSiO₂ interface of the samples in a different way depending on the type of the previously implanted atoms (O⁺ or B⁺). The results demonstrate that the concentration of the shallower levels (in the silicon band gap) of oxygen-implanted samples increases more effectively after gamma irradiation. The same irradiation conditions increase more intensively the concentration of the deeper levels (in the silicon band gap) of boron-implanted samples. Received: 17 June 2002 / Accepted: 31 August 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +359-2/975-3236, E-mail: kaschiev@issp.bas.bg     

离子注入ZnO薄膜的拉曼光谱研究

室温下,用80 keV N⁺和400 keV Xe⁺离子注入ZnO薄膜,注入剂量分别为5.0×10¹⁴—1.0×10¹⁷/cm²和2.0×10¹⁴—5.0×10¹⁵/cm².利用拉曼散射技术对注入前后的ZnO薄膜进行光谱测量和分析,研究了样品的拉曼光谱随离子注入剂量的变化规律.实验结果发现,未进行离子注入的样品在99,435 cm<     

Boron electrical activation in dual B+ + N+ + and B+ + Ar+ ion-implanted silicon

Silicon wafers were implanted with 40 keV B⁺ ions and then with 50 keV N⁺ or 100 keV Ar+ ions to doses from 1.2 x 1014 to 1.2 x 1015 cm^–2. The implanted samples were studied using the Hall effect and standard van der Pauw methods. The dependences of the sheet resistivity and the sheet concentration of charge carriers on the annealing temperature in the range from 700 to 1300 K were obtained. Models describing the influence of additional implantation of nitrogen and argon ions on the process of boron electrical activation during annealing are proposed.     

注入Ar+的蓝宝石晶体退火前后光致发光谱的分析

对注入Ar⁺后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar⁺注入后,其光致发光谱中均出现了新的位于506nm处的发光峰;真空和空气气氛下的退火均对样品在506nm处的发光有增强作用,不同晶面取向的样品发光增强程度不同,且发光增强至最大时的退火温度也不同,空气气氛下的退火使样品发光增强程度更为显著.由此可以看出,退火气氛、退火温度和晶面取向均对样品发光峰强度有影响. 关键词： 2O₃')" href="#">Al₂O₃ 离子注入 退火 光致发光谱     

Optical properties of ion-implanted polymer layers

Polyethylene and polyamide-6 films implanted with 100 keV B⁺ ions within the dose range of 1·10¹⁴–1·10¹⁷ cm⁻² are investigated by the methods of optical spectroscopy. It is shown that in the case of ion-implanted polymers, optical absorption is caused by carbon nanoclusters formed in the tracks of bombardment ions. The dynamics of growth of these nanonclusters during ion implantation are studied. The concept of formation of a carbonized ion-implanted layer is suggested, which takes into consideration the formation of lower unsaturated compounds (dienes, trienes) and primitive carbon clusters, cluster growth and formation of saturated and unsaturated intercluster bridge bonds. Moreover, an investigation is made of the side process of compensation of broken carbon bonds due to interaction with atmospheric oxygen. Belarusian State University, 4, F. Skorina Ave., Minsk, 220050, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 3, pp. 377–381, May–June, 1998.     

Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers

An experimental study on the photocarrier radiometry signals of As⁺ ion implanted silicon wafers before and after rapid thermal annealing is performed. The dependences of photocarrier radiometry amplitude on ion implantation dose (1×10¹¹--1×10¹⁶/cm²), implantation energy (20--140 keV) and subsequent isochronical annealing temperature (500--1100 du are investigated. The results show that photocarrier radiometry signals are greatly enhanced for implanted samples annealed at high temperature, especially for those with a high implantation dose. The reduced surface recombination rate resulting from a high built-in electric field generated by annealing-activated impurities in the pn junction is believed to be responsible for the photocarrier radiometry signal enhancement. Photocarrier radiometry is contactless and can therefore be used as an effective in-line tool for the thermal annealing process monitoring of the ion-implanted wafers in semiconductor industries.     

Temperature and N energy dependence on nano-structural modifications and characteristics of Mo surface

The surface modifications of Mo massive samples (0.5 mm foils) made by nitrogen ion implantation are studied by SEM, XRD, AFM, and SIMS. Nitrogen ions in the energy range of 16-30 keV with a fluence of 1 × 10¹⁸ N⁺ cm⁻² were implanted in molybdenum samples for 1600 s at different temperatures. XRD patterns clearly showed MoN (0 3 1) (hcp) very close to Mo (2 0 0) line. Crystallite sizes (coherently diffracting domains) obtained from MoN (0 3 1) line, showed an increase with substrate temperature. AFM images showed the formation of grains on Mo samples, which grew in size with temperature. Similar morphological changes to that has been observed for thin films by increasing substrate temperature (i.e., structure zone model (SZM)), is obtained. The density of implanted nitrogen ions and the depth of nitrogen ion implantation in Mo studied by SIMS showed a minimum for N⁺ density as well as a minimum for penetration depth of N⁺ ions in Mo at certain temperatures, which are both consistent with XRD results (i.e., I_{Mo (2 0 0)}/I_{Mo (2 1 1)}) for Mo (bcc). Hence, showing a correlation between XRD and SIMS results. This phenomenon is explained on the basis of residual gas, substrate temperature, dissociation of water in the chamber and the ion energy.