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1.
F. Kokai M. Taniwaki M. Ishihara Y. Koga 《Applied Physics A: Materials Science & Processing》2002,74(4):533-536
We deposited amorphous thin films of boron carbide by pulsed laser deposition using a B4C target at room temperature. As the laser fluence increased from 1 to 3 J/cm2, the number of 0.25–5 μm particulates embedded in the films decreased, and the B/C atomic ratio of the films increased from
1.8 to 3.2. The arrival of melt droplets, atoms, and small molecular species depending on laser fluence appeared to be involved
in the film formation. In addition, with increasing fluence the nanoindentation hardness of the films increased from 14 to
32 GPa. We believe that the dominant factor in the observed increase in the films’ hardness is the arrival of highly energetic
ions and atoms that results in the formation of denser films.
Received: 23 March 2001 / Accepted: 1 July 2001 / Published online: 2 October 2001 相似文献
2.
M. Ivill M. Patel K. Kim H. Bae S.J. Pearton D.P. Norton J.D. Budai 《Applied Physics A: Materials Science & Processing》2002,75(6):699-702
The epitaxial growth of CeO2 thin films has been realized on (100) InP substrates using reactive r.f. magnetron sputtering. Oxide films were nucleated
in the presence of molecular hydrogen (4% H2/Ar sputtering gas) in order to reduce the native oxide formation on the InP surface, which interferes with CeO2 epitaxy. A metal cerium target was used as the cation source, with water vapor serving as the oxidizing species. Epitaxial
films were sputter-deposited at a substrate temperature of 550 °C in a H2O vapor pressure of approximately 10-3 Torr. Crystallinity of the oxide films was examined using θ–2θ X-ray diffraction, ω-rocking curves, and in-plane φ-scans. The best results were obtained when the initial nucleation layer was deposited with P(H2O)<10-5 Torr, followed by deposition at P(H2O)=10-3 Torr. The epitaxial growth of CeO2 on InP could prove enabling in efforts to integrate functional oxides with InP-based optoelectronic and microwave technologies.
Received: 20 February 20002 / Accepted: 21 February 2002 / Published online: 19 July 2002 相似文献
3.
W. Jo 《Applied Physics A: Materials Science & Processing》2001,72(1):81-84
Bismuth titanate, Bi4Ti3O12, thin films were grown on IrO2/SiO2/Si substrates by radio-frequency magnetron sputtering. Crystallinity and microstructure of the films were characterized over
a wide range of oxygen mixing ratio (OMR) during deposition. X-ray fluorescence spectra reveal that the cation content of
the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by the oxygen content in the sputtering
atmosphere. Rutherford backscattering spectrometry measurements also show that oxygen content of the BTO film grown with an
OMR = 0.5is close to a stoichiometric phase. In addition, Bi–O bonding chemistry is studied by X-ray photoelectron spectroscopy.
Polarization vs. voltage loop shows that remnant polarization, Pr, is +12 μC/cm2.
Received: 26 November 1999 / Accepted: 26 November 1999 / Published online: 9 August 2000 相似文献
4.
Surasing Chaiyakun Artorn Pokaipisit Pichet Limsuwan Boonlaer Ngotawornchai 《Applied Physics A: Materials Science & Processing》2009,95(2):579-587
Titanium dioxide thin films were deposited on three different unheated substrates by unbalanced magnetron sputtering. The
effects of the sputtering current and deposition time on the crystallization of TiO2 thin films were studied. The TiO2 thin films were deposited at three sputtering current values of 0.50, 0.75, and 1.00 A with different deposition times of 25,
35, and 45 min, respectively. The surface morphology of the films was investigated by atomic force microscopy (AFM). The structure
was characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The film thickness was determined
by field emission scanning electron microscopy (FE-SEM), and the optical property was evaluated with spectroscopic ellipsometry.
The results show that polycrystalline anatase films were obtained at a low sputtering current value. The crystallinity of
the anatase phase increases as the sputtering current increases. Furthermore, nanostructured anatase phase TiO2 thin films were obtained for all deposition conditions. The grain size of TiO2 thin films was in the range 10–30 nm. In addition, the grain size increases as the sputtering current and deposition time
increase. 相似文献
5.
G.S. Wang X.J. Meng Z.Q. Lai J. Yu J.L. Sun S.L. Guo J.H. Chu 《Applied Physics A: Materials Science & Processing》2003,76(1):83-86
Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films have been grown on Pt/Ti/SiO2/Si substrates by chemical solution methods. X-ray diffraction analysis shows that BLT thin films are polycrystalline with
(171)-preferential orientation. Atomic force microscopy investigation shows that they have large grains about 120 nm in size.
A Pt/BLT/Pt capacitor has been fabricated and showed excellent ferroelectricity, with a remnant polarization and coercive
field of 24 μC/cm2 and 116 kV/cm, respectively. The capacitor shows no polarization fatigue up to 109 switching cycles. The optical constants (n,k) of the BLT thin films in the wavelength range 0.35–1.7 μm were obtained by
spectroscopic ellipsometry measurements, and the band-gap energy was found to be about 3.25 eV.
Received: 16 October 2001 / Accepted: 6 January 2002 / Published online: 3 June 2002
RID="*"
ID="*"Corresponding author. Fax: +86-21/65830-734, E-mail: gswang@mail.sitp.ac.cn 相似文献
6.
X. Zhu S. Lu H.L.W. Chan C.L. Choy K.H. Wong 《Applied Physics A: Materials Science & Processing》2003,76(2):225-229
Compositionally graded (Ba1-xSrx)TiO3 (BST) (x:0.0∼0.25) thin films were grown on Pt (111)/TiO2/SiO2/Si (100) substrates using layer-by-layer pulsed laser deposition in the temperature range 550–650 °C. Both downgraded (Ba/Sr
ratio varying from 100/0 at the bottom surface to 75/25 at the top surface) and upgraded (Ba/Sr ratio varying from 75/25 at
the bottom surface to 100/0 at the top surface) BST films were prepared. Their microstructures were systematically studied
by X-ray diffractometry and scanning electron microscopy. A grain morphology transition from large ‘rosettes’ (>0.30 μm) to
small compact grains (70–110 nm) was observed in the downgraded BST films as the deposition temperature was increased from
550 to 650 °C. No such grain morphology transition was detected in the upgraded BST films. Dielectric measurements with metal
electrodes revealed an enhanced dielectric behavior in the downgraded films. This enhancement is mainly attributed to the
large compressive stress field built up near the interface between the downgraded film and substrate. Furthermore, the BaTiO3 layer in the downgraded BST films not only serves as a bottom layer but also as an excellent seeding layer for enhancing
the crystallization of the subsequent film layers in the downgraded films.
Received: 10 December 2001 / Accepted: 12 March 2002 / Published online: 19 July 2002
RID="*"
ID="*"Corresponding author. Fax: 86-25/359-5535, E-mail: xhzhu@public1.ptt.js.cn 相似文献
7.
S.-J. An W.I. Park G.-C. Yi S. Cho 《Applied Physics A: Materials Science & Processing》2002,74(4):509-512
High-quality ZnO thin films were grown on single-crystalline Al2O3(0001) and amorphous SiO2/Si(100) substrates at 400–640 °C using laser molecular beam epitaxy. For film growth, the third harmonics of a pulsed Nd:YAG
laser were illuminated on a ZnO target. The ZnO films were epitaxially grown on Al2O3(0001) with the narrow X-ray diffraction full width at half maximum (FWHM) of 0.04° and the films on SiO2/Si(100) exhibited a preferred c-axis orientation. Furthermore, the films exhibited excellent optical properties in photoluminescence
(PL) measurements with very sharp excitonic and weak deep-level emission peaks. At 15 K, PL FWHM values of the films grown
on Al2O3(0001) and SiO2/Si(100) were 3 and 18 meV, respectively.
Received: 8 May 2001 / Accepted: 18 September 2001 / Published online: 20 December 2001 相似文献
8.
Z.Y. Chen J.P. Zhao T. Yano T. Ooie 《Applied Physics A: Materials Science & Processing》2002,75(2):213-216
Raman characteristics of carbon nitride films synthesized by nitrogen-ion-beam-assisted pulsed laser deposition were investigated.
In addition to the D (disorder) band and G (graphitic) band commonly observed in carbon nitride films, two Raman bands located
at 1080–1100 and 1465–1480 cm-1 were found from our carbon nitride films. These two bands were well matched with the predicted Raman frequencies for βC3N4 and the observed Raman bands reported for carbon nitride films, indicating their relation to carbon-nitrogen stretching vibrations.
Furthermore, the relative intensity ratio of the two Raman bands to the D and G bands increased linearly with increasing nitrogen
content of the carbon nitride films.
Received: 30 October 2000 / Accepted: 5 February 2001 / Published online: 2 October 2001 相似文献
9.
Properties of reactively sputtered W–B–N thin film as a diffusion barrier for Cu metallization on Si
L. C. Leu D. P. Norton L. McElwee-White T. J. Anderson 《Applied Physics A: Materials Science & Processing》2009,94(3):691-695
Thin films of W–B–N (10 nm) have been evaluated as diffusion barriers for Cu interconnects. The amorphous W–B–N thin films
were prepared at room temperature via reactive magnetron sputtering using a W2B target at various N2/(Ar + N2) flow ratios. Cu diffusion tests were performed after in-situ deposition of 200 nm Cu. Thermal annealing of the barrier stacks
was carried out in vacuum at elevated temperatures for one hour. X-ray diffraction patterns, sheet resistance measurement,
cross-section transmission electron microscopy images, and energy-dispersive spectrometer scans on the samples annealed at
500°C revealed no Cu diffusion through the barrier. The results indicate that amorphous W–B–N is a promising low resistivity
diffusion barrier material for copper interconnects. 相似文献
10.
Structure, refractive-index dispersion and the optical absorption edge of chemically deposited ZnxCd(1-x)S thin films 总被引:2,自引:0,他引:2
A.M. Salem 《Applied Physics A: Materials Science & Processing》2002,74(2):205-211
Zinc cadmium sulfide, ZnxCd(1-x)S, thin films have been deposited by a simple and inexpensive chemical bath deposition method from an aqueous medium using
thiourea as a sulfide-ion source. The structure of the deposited films has been characterized by X-ray diffraction and transmission
electron microscopy. It was observed from X-ray diffraction that the as-deposited films were amorphous in nature. However
ZnxCd(1-x)S films annealed at 423 K for 1.5 h show a crystalline structure with a small scattering volume. The obtained results were
confirmed throughout the transmission electron microscopy and the corresponding electron-diffraction patterns. The optical
constants of ZnxCd(1-x)S films annealed at 423 K for 1.5 h in the compositional range 0≤x≤1 were estimated using transmission and reflection spectra
in the wavelength range 300–2500 nm. The band gap varies non-linearly with the value of x. The dependence of the refractive
index on the wavelength obeys the single-oscillation model, from which the dispersion parameters and the high-frequency dielectric
constant were determined. A graphical representation of the surface and volume energy-loss functions was also given.
Received: 23 February 2001 / Accepted: 26 February 2001 / Published online: 27 June 2001 相似文献
11.
Jose Antonio Ayllon Monica Lira-Cantu 《Applied Physics A: Materials Science & Processing》2009,95(1):249-255
The effects of oxygen content in the sputtering gas on the crystallographic and optoelectronic properties of 210 nm-thick
Zr–doped In2O3 (Zr–In2O3) films by rf magnetron sputtering were initially studied. The results of X-ray diffraction show that the Zr–In2O3 films grown on glass substrates exhibit mixed crystallographic orientations. Moreover, the Zr–In2O3 film grown in an Ar atmosphere promotes the appearance of crystallographic orientation of (222). The surface of the Zr–In2O3 film becomes rougher as the oxygen content in the sputtering gas decreases; the current images obtained by conductive atomic
force microscopy reveal that the surfaces of the Zr–In2O3 films exhibit a distribution of coexisting conducting and nonconducting regions, and that the area of the nonconducting surface
increases with the oxygen content in the sputtering gas. The resistivity is minimized to 3.51×10−4 Ω cm when the Zr–In2O3 film is grown in an Ar atmosphere and the average transmittance in the visible light region is ∼85%. The optical band gap
decreases as the oxygen content in the sputtering gas increases. 相似文献
12.
R.A. Gunasekaran J.D. Pedarnig M. Dinescu 《Applied Physics A: Materials Science & Processing》1999,69(6):621-624
A parametric study of the growth of La0.5Sr0.5CoO3 (LSCO) thin films on (100) MgO substrates by pulsed-laser deposition (PLD) is reported. Films are grown under a wide range
of substrate temperature (450–800 °C), oxygen pressure (0.1–0.9 mbar), and incident laser fluence (0.8–2.6 J/cm2). The optimum ranges of temperature, oxygen pressure, and laser fluence to produce c-axis oriented films with smooth surface morphology and high metallic conductivity are identified. Films deposited at low
temperature (500 °C) and post-annealed in situ at higher temperatures (600–800 °C) are also investigated with respect to their
structure, surface morphology, and electrical conductivity.
Received: 20 November 1998 / Accepted: 6 July 1999 / Published online: 21 October 1999 相似文献
13.
T.W KimD.C Choo J.H KimH.J Kim J.H JeongM Jung J.H BahangH.L Park Y.S YoonJ.Y Kim 《Journal of Physics and Chemistry of Solids》2002,63(5):881-885
Spectroscopic ellipsometry and photoluminescence (PL) measurements on SnO2 nanocrystalline textured films grown on p-InSb (111) substrates by using radio-frequency magnetron sputtering at low temperature were carried out to investigate the dependence of the optical parameters on the SnO2 thin film thickness. As the SnO2 film thickness increases, while the energy gap of the SnO2 film decreases, its refractive index increases. The PL spectra show that the broad peaks corresponding to the donor-acceptor pair transitions are dominant and that the peak positions change with the SnO2 film thickness. These results can help improve understanding for the application of SnO2 nanocrystalline thin films grown on p-InSb (111) substrates in potential optoelectronic devices based on InSb substrates. 相似文献
14.
A.A. Lyalin A.V. Simakin G.A. Shafeev E.N. Loubnin 《Applied Physics A: Materials Science & Processing》1999,68(3):373-376
6 H5CH3, C6H6, and C6H5CH(CH3)2) to pulsed visible laser radiation of a copper vapor laser (λ=510.6 nm). The X-ray Auger electron spectroscopy (XAES), reflection
high energy electron diffraction (RHEED), and Raman analysis are employed to characterize the deposited films. The sp3 fraction in deposited films amounts to 60–70% and depends on the precursor. The average film thickness on a glass substrate
is about 100 nm. The films show excellent adherence, are transparent in the visible and have microhardness of 50–70 GPa, as
measured by nanoindentor.
Received: 28 September 1998 / Accepted: 13 January 1999 相似文献
15.
HfNxOy thin films were deposited on Si substrates by direct current sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). SEM indicates that the film is composed of nanoparticles. AFM indicates that there are no sharp protrusions on the surface of the film. XRD pattern shows that the films are amorphous. The field electron emission properties of the film were also characterized. The turn-on electric field is about 14 V/μm at the current density of 10 μA/cm2, and at the electric field of 24 V/μm, the current density is up to 1 mA/cm2. The field electron emission mechanism of the HfNxOy thin film is also discussed. 相似文献
16.
J.A. Chaos J. Gonzalo C.N. Afonso J. Perrière M.T. García-González 《Applied Physics A: Materials Science & Processing》2001,72(6):705-710
Laser ablation of single-crystal LiNbO3 in a gas environment is used to grow films on (100) Si substrates heated to 650 °C. The film composition and crystallinity
are studied as a function of the nature (reactive, O2, or inert, Ar) and pressure of the gas environment applied during deposition and cooling-down processes, the laser energy
density and the target–substrate distance. Experimental results show that a gas pressure close to 1 mbar is required to produce
stoichiometric films in either O2 or Ar. The modification of the laser energy density and the target–substrate distance allows us to improve the crystallinity
of the films that become textured along the (006) direction. The influence of the experimental parameters on the film properties
is discussed in the frame of the formation of a blast wave, that leads to the focusing of the expanding Li species and thus,
to the increase of the Li content in the films.
Received: 8 February 2001 / Accepted: 9 February 2001 / Published online: 3 May 2001 相似文献
17.
2 O3 thin films by plasma-enhanced chemical vapour deposition (PECVD) using trimethyl-amine alane (TMAA) as the Al precursor.
The thin films were deposited on both Si and quartz silica (SiO2) substrates. Deposition rates were typically 60 Å min-1 keeping the TMAA temperature constant at 45 °C. The deposited Al2O3 thin films were stoichiometric alumina with low carbon contamination (0.7–1.3 At%). The refractive index ranged from 1.54
to 1.62 depending on the deposition conditions. The deposition rate was studied as a function of both the RF power and the
substrate temperature. The structure and the surface of the deposited Al2O3 thin films were studied using X-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy (SEM).
Received: 20 May 1997/Accepted: 12 June 1997 相似文献
18.
Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering 总被引:2,自引:0,他引:2
H.B. Nie S.Y. Xu S.J. Wang L.P. You Z. Yang C.K. Ong J. Li T.Y.F. Liew 《Applied Physics A: Materials Science & Processing》2001,73(2):229-236
TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN]n multilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two
series of TaN films on glass and Si substrates by using reactive radio-frequency sputtering under 5-mtorr Ar/N2 processing pressure with varied N2 partial pressure, and carried out systematic characterization analyses of the films. We observed clear changes of phases
in the films from metallic bcc Ta to a mixture of bcc Ta(N) and hexagonal Ta2N, then sequentially to fcc TaN and a mixture of TaN with N-rich phases when the N2 partial pressure increased from 0.0% to 30%. The changes were associated with changes in the grain shapes as well as in the
preferred crystalline orientation of the films from bcc Ta [100] to [110], then to random and finally to fcc TaN [111], correspondingly. They were also associated with a change in film resistivity from metallic to semiconductor-like
behavior in the range of 77–295 K. The films showed a typical polycrystalline textured structure with small, crystallized
domains and irregular grain shapes. Clear preferred (111) stacks parallel to the substrate surface with embedded amorphous
regions were observed in the film. TaN film with [111]-preferred orientation and a resistivity of 6.0 mΩ cm was obtained at
25% N2 partial pressure, which may be suitable for the interlayer in [FeN/TaN]n multilayers.
Received: 6 December 1999 / Accepted: 24 July 2000 / Published online: 9 November 2000 相似文献
19.
Cheng-Fu Yang Hong-Hsin Huang Cheng-Yi Chen Ping-Chih Huang Chien-Chen Diao 《Applied Physics A: Materials Science & Processing》2009,94(1):117-122
In this study, two different thin films, TiO2 thin film and TiO2–W–TiO2 multi-layer thin films (W, tungsten), are prepared by RF magnetron sputtering onto glass substrates. The crystal structure,
morphology, and transmittance of TiO2 and TiO2–W–TiO2 multi-layer thin films are investigated by X-ray diffraction, SEM, and UV-Vis spectrometer, respectively. The amorphous,
rutile, and anatase TiO2 phases are observed in the TiO2 thin film and in the TiO2–W–TiO2 multi-layer thin films. The deposition of tungsten as the inter-layer will have large effect on the transmittance and phase
ratios of rutile and anatase phases in the TiO2–W–TiO2 multi-layer thin films. The crystal intensities of amorous TiO2 will decrease as the tungsten is used as the middle layer in the multi-layer structure. The band gap energy values of TiO2 thin film and TiO2–W–TiO2 multi-layer thin films are evaluated from (αhν)1/2 versus energy plots, and the calculated results show that the energy gap decreases from 3.21 eV (TiO2 thin film) to 3.08∼3.03 EV (TiO2–W–TiO2 multi-layer thin films). 相似文献
20.
J. Gonzalo O. Sanz A. Perea J.M. Fernández-Navarro C.N. Afonso J. García López 《Applied Physics A: Materials Science & Processing》2003,76(6):943-946
Heavy metal oxide thin films of the ternary system Nb2O5–GeO2–PbO have been prepared by pulsed laser deposition in an O2 environment from either glassy or crystalline bulk samples. The range of ([Pb]+[Nb]) content in which the films are optically
homogeneous and transparent is much broader (0.5–1.0) than that of the bulk samples considered in the present work (0.55–0.62).
The imaginary part of the refractive index is very low in all cases (k<10-3), whereas the real part increases linearly with the ([Pb]+[Nb]) content up to values as high as 2.35. The optical energy
gap has been found to be strongly dependent on [Pb], whereas it is almost independent of [Nb]. This dependence is discussed
in terms of the role of Pb and Nb as network modifiers or formers.
Received: 5 August 2002 / Accepted: 8 August 2002 / Published online: 17 December 2002
RID="*"
ID="*"Corresponding author. Fax: +34-91/564-5557, E-mail: j.gonzalo@io.cfmac.csic.es 相似文献