Preparation and characterization of Mn doped copper nitride films with high photocurrent response

The Mn-doped copper nitride (Cu₃N) films with Mn concentration of 2.0 at. % have high crystallinity and uniform surface morphology. We found that the as-synthesized Mn-doped Cu₃N films show suitable optical absorption in the visible region and the band gap is ∼1.48 eV. A simple photodetector based on Mn doped Cu₃N films was firstly fabricated via magnetron sputtering method. The fabricated device with doping of Mn demonstrated high photocurrent response and fast response shorter than 0.1 s both for rise and decay time superior to the pure Cu₃N. Furthermore, the energy levels of Mn-doped Cu₃N matched well with ITO and Ag electrode. The excellent photoelectric properties reflect a good balance between sensitivities and response rate. Our investigation reveals the excellent potential of Mn-doped Cu₃N films for application of photodetectors.     

Enhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer deposition

Temperature-dependent photoluminescence (PL) from Si nanodots with Al₂O₃ surface passivation layers was studied. The Si nanodots were grown by low pressure chemical vapor deposition and the Al₂O₃ thin films were prepared by atomic layer deposition (ALD), respectively. The BOE (Buffer-Oxide-Etch) treatment resulted in the damaged surface of Si nanodots and thus caused dramatic reduction in the PL intensity. Significant enhancement of the PL intensity from Si nanodots after the deposition of Al₂O₃ thin films was observed over a wide temperature range, indicating the remarkable surface passivation effect to suppress the non-radiative recombination at the surface of Si nanodots. The results demonstrated that the Al₂O₃ surface passivation layers grown by ALD are effectually applicable to nanostructured silicon devices.     

c-Axis correlated extended defects and critical current in YBa2Cu3Ox films grown on Au and Ag-nano dot decorated substrates

We report measurements of critical current in YBa₂Cu₃O_x films deposited on SrTiO₃ substrates decorated with silver and gold nanodots. An increase in critical current in these films, in comparison with the films deposited on non-decorated substrates, has been achieved. We argue that this increase comes from the c-axis correlated extended defects formed in the films and originated from the nanodots. Additionally to creating extended defects, the nanodots pin them and prevent their exit from the sample during the film growth, thus keeping a high density of defects and providing a lower rate of decrease of the critical current with the thickness of the films. The best pinning is achieved in the samples with silver nanodots by optimising their deposition temperature. The nanodots grown at a temperature of a few hundred °C have a small diameter of a few nanometres and a high surface density of 10¹¹–10¹² particles/cm². We give evidence of c-axis correlated extended defects in YBa₂Cu₃O_x films by planar and cross-sectional atomic force microscopy, transmission electron microscopy and angle-dependent transport measurements of critical current.     

Anomalies of attenuation and phase velocity of surface acoustic waves in YBa2Cu3O7‒δ thin films in the vicinity of Tc

We present measurements of the attenuation and phase velocity of surface acoustic waves in thin YBa₂Cu₃O films as a function of temperature, in magnetic fields up to 3.6 T applied parallel to the c-axis of the films. We have observed anomalies in both, the attenuation and the phase velocity in the vicinity of the superconducting critical temperature which do not depend on the magnetic field. Possible origins of these anomalies, observed, to our knowledge, for the first time in YBa₂Cu₃O thin films, are discussed and compared to bulk acoustic wave experiments. We present a kind of feedback technique for surface acoustic waves which improves the sensitivity of this type of measurement. The actual sensitivity limits are mentioned. Received: 7 August 1997 / Revised: 7 November 1997 / Accepted: 17 November 1997     

Optical characterization of thin thermal oxide films on copper by ellipsometry

A complete optical characterization in the visible region of thin copper oxide films has been performed by ellipsometry. Copper oxide films of various thicknesses were grown on thick copper films by low temperature thermal oxidation at 125 °C in air for different time intervals. The thickness and optical constants of the copper oxide films were determined in the visible region by ellipsometric measurements. It was found that a linear time law is valid for the oxide growth in air at 125 °C. The spectral behaviour of the optical constants and the value of the band gap in the oxide films determined by ellipsometry in this study are in agreement with the behaviour of those of Cu₂O, which have been obtained elsewhere through reflectance and transmittance methods. The band gap of copper oxide, determined from the spectral behaviour of the absorption coefficient was about 2 eV, which is the generally accepted value for Cu₂O. It was therefore concluded that the oxide composition of the surface film grown on copper is in the form of Cu₂O (cuprous oxide). It was also shown that the reflectance spectra of the copper oxide–copper structures exhibit behaviour expected from a single layer antireflection coating of Cu₂O on Cu. Received: 19 July 2001 / Accepted: 27 July 2001 / Published online: 17 October 2001     

Effect of substrate temperature on electrical and magnetic properties of epitaxial La1−x Pb x MnO3 films

Epitaxial La_1−x Pb _x MnO₃ (LPMO) thin films, grown on (100) SrTiO₃ substrates by laser ablation technique at different temperatures between 600 and 850°C, have been characterized for electrical and magnetic properties. The temperature dependence of resistivity showed that the metal-insulator transition temperature (T _MI) decreases with increasing substrate temperature, which has been attributed to decrease in Pb content in the filsm. The YBa₂Cu₃O _x /La_1−x MnO₃ heterostructures, exhibiting both superconductivity and ferromagnetism, have been fabricated.     

Ferroelectricity and structure of BaTiO3 grown on YBa 2Cu3O_{7 - \delta } thin films

We have investigated the crystal structure and the ferroelectric properties of BaTiO₃ thin films with YBa₂Cu₃O as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa₂Cu₃O and BaTiO₃ were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by X-ray diffraction. The ferroelectric behaviour of the BaTiO₃ films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of 1.25 μC/cm². At sub-switching fields the capacitance of the films obeys a relation analogous to the Rayleigh law. This behaviour indicates an interaction of domain walls with randomly distributed pinning centres. At a field of 5 MV/m we calculate a 3% contribution of the irreversible domain wall motion to the total dielectric constant. Received 24 June 1999 and Received in final form 27 August 1999     

Structure and magnetic properties of CrN thin films on La0.67Sr0.33MnO3

High crystalline quality CrN thin films have been grown on La_0.67Sr_0.33MnO₃ (LSMO) templates by molecular beam epitaxy. The structure and magnetic properties of CrN/LSMO heterojunctions are investigated combining with the experiments and the first-principles simulation. The Nėel temperature of the CrN/LSMO samples is found to be 281 K and the saturation magnetization of CrN/LSMO increases compared to that of LSMO templates. The magnetic property of CrN/LSMO heterostructures mainly comes from Cr atoms of (001) CrN and Mn atoms of (001) LSMO. The (001) LSMO induces and couples the spin of the CrN sublattice at CrN/LSMO interface.     

Infrared optical properties of PbZr0.4Ti0.6O3/La0.5Sr0.5CoO3 heterostructures on platinized silicon substrate

PbZr_0.4Ti_0.6O₃/La_0.5Sr_0.5CoO₃ heterostructures have been grown on Pt/Ti/SiO₂/Si substrates by chemical solution routes. Optical properties of the PbZr_0.4Ti_0.6O₃/La_0.5Sr_0.5CoO₃ heterostructures were studied by infrared spectroscopic ellipsometry (IRSE) in the spectral range of 2.5–12.5 m. The optical constants of PbZr_0.4Ti_0.6O₃ and La_0.5Sr_0.5CoO₃ thin films were determined by fitting the IRSE data using a classical dielectric model and a Drude dielectric model, respectively. For PbZr_0.4Ti_0.6O₃ thin films, the refractive index decreases and the extinction coefficient increases as the wavelength increases. For La_0.5Sr_0.5CoO₃ thin films, the refractive index and the extinction coefficient increase as the wavelength increases. The absorption coefficient of La_0.5Sr_0.5CoO₃ thin films is greater than 10⁴ cm^-1 for the wavelength range of 2.5–12.5 m. The absorption coefficient of PbZr_0.4Ti_0.6O₃ thin films on a La_0.5Sr_0.5CoO₃/Pt/Ti/SiO₂/Si substrate is smaller than that on a Pt/Ti/SiO₂/Si substrate by a factor of two. PACS 77.84.Dy; 78.20.Ci; 81.20.Fw     

First principles study of the electronic properties and Schottky barrier in Cu2Si/C2N van der Waals heterostructures

Based on the first principles calculations, we have systematically investigated the electronic structures of Cu₂Si/C₂N van der Waals (vdW) heterostructures. We discovered that the electronic structures of Cu₂Si and C₂N monolayers are preserved in Cu₂Si/C₂N vdW heterostructures. There is a transition from the n-type Schottky contact to Ohmic contact when the interfacial distance decreases from 4.4 to 2.7 Å, which indicates that the Schottky barrier can be tuned effectively by the interfacial distance. Meanwhile, we find that the carrier concentration between the Cu₂Si and C₂N interfaces in the vdW heterostructures can be tuned. These findings suggest that the Cu₂Si/C₂N vdW heterostructure is a promising candidate for application in future nanoelectronics and optoelectronics devices.     

Growth of polycrystalline La0.5Sr0.5CoO3 films by femtosecond pulsed laser deposition

In this paper we present the growth of La_0.5Sr_0.5CoO₃ (LSCO) films on MgO, quartz, and silicon substrates by pulsed laser deposition (PLD) using a Ti:sapphire laser (50 fs, 800 nm wavelength). The morphology and the structure of the films were studied by X-ray diffraction, atomic force microscopy, and scanning electron microscopy. The films were polycrystalline and exhibit a good adherence to the Si substrate. Different deposition parameters such as substrate temperature, oxygen pressure, and laser fluence were varied to achieve good surface quality and low resistivity crystalline films. We also defined the optimum conditions in which the deposited film surface is particulate free. The best films (droplets free) were grown at 625 °C, in an ambient oxygen pressure of 6 mbar, with an incident laser fluence of 0.19 J/cm². This is a mandatory step in the complex work of fabricating La_0.5Sr_0.5CoO₃/BaTiO₃/La_0.5Sr_0.5CoO₃ heterostructures for the development of thin film capacitors for non-volatile ferroelectric access memory devices. PACS 81.15 Fg; 42.62-b; 68.65.Ac     

Effect of LaNiO3 buffer layers on the structure and electrical properties of sol–gel-derived Pb(Mg1/3Nb2/3)O3PbTiO3 thin films

Pb(Mg_1/3Nb_2/3)O₃PbTiO₃ (PMNT) thin films on Pt/TiO₂/SiO₂/Si substrates with and without a LaNiO₃ (LNO) buffer layer have been prepared using a sol–gel method. Structures and electrical properties of these two films have been investigated and compared. Highly (111)-oriented PMNT thin films with a certain amount of pyrochlore phase are obtained on bare Pt electrodes. On the contrary, (100)-oriented PMNT thin films with pure perovskite phase are formed on Pt electrodes with a LNO buffer layer. Cracks are found in the former but not in the latter. The dielectric constant of PMNT thin films on LNO-buffer Pt electrodes is larger than that on bare Pt electrodes. A great lowering of the leakage current is observed in the films with a LNO buffer layer. The improvement in the electrical properties is attributed to both the elimination of cracks and the suppression of pyrochlore phase in the films. PACS 77.84.Dy; 77.80.-e; 77.22.Gm     

Effect of La2Zr2O7-buffered YSZ substrate on YBa2Cu3Oy thin films by chemical solution deposition

Epitaxial YBa₂Cu₃O_y (YBCO) thin films have been fabricated by chemical solution deposition (CSD) on La₂Zr₂O₇-buffered YSZ single crystal substrate, where the buffer layer has three kinds of morphology – flat surface, rough surface and pore surface. The effect of LZO buffer layer’s roughness on the YBCO films was evaluated by X-ray diffraction, scanning electron microscopy and temperature-dependent resistivity measurements. The flat surface of LZO layer is beneficial to highly epitaxial YBCO films and high critical current density.     

Electrical transport properties and laser-induced voltage effect in La0.8Ca0.2MnO3 epitaxial thin films

La_0.8Ca_0.2MnO₃ (LCMO) thin films about 200 nm thickness were grown on untilted and tilted (5°, 10° and 15°) LaAlO₃ (100) single crystal substrates by pulsed laser deposition technique. Electrical properties of the epitaxial thin films were studied by conventional four-probe technique and the anisotropic thermoelectric properties of the films grown on the tilted substrates have been investigated by laser-induced voltage (LIV) measurements. X-ray diffraction analysis and atomic force microscopy results show that the prepared LCMO thin films have a single phase and high crystalline quality. The remarkably large temperature coefficient of resistance (TCR) values (above 11 %/K) are observed in the all films. TCR value reaches 18 %/K on the film grown on 10° tilted substrate. The intensity of LIV signals monotonously increases with the tilting angles, and the largest signal is 148 mV with the fast time response 229 ns for the film grown on 15° tilted substrate.     

La0.67Ca0.33MnO3(001)薄膜表面结构的扫描隧道显微术研究

利用Scanning Tunneling Microscope(STM)和Scanning Tunneling Spectroscopy(STS)技术研究了La_0.67Ca_0.33MnO₃(001)表面性质,研究发现表面呈现多相分离现象,在锰氧终端面观察到了绝缘性的( 2 × 2 )R45°重构表面和金属性的(1×1)重构表面,在镧钙氧终端面,观察到了表面呈现条纹状结构.La_0.67Ca_{0.33 关键词： 镧钙锰氧薄膜 终端面 绝缘金属转变}     

Preparation and characterization of patterned copper sulfide thin films on n-type TiO2 film surfaces

Micro-arrayed patterns of p-type copper sulfide (Cu_xS) thin films with positive and negative features were deposited onto the surfaces of n-type TiO₂ semiconductor films via a selective nucleation and growth process from aqueous solution. The surface functional molecules of the UV photo-oxidised patterned SAMs were utilized to direct the nucleation and growth of Cu_xS crystallites. The resultant Cu_xS/TiO₂ composite films with negative and positive Cu_xS patterns on the TiO₂ film surface were investigated using SEM, XRD, XPS and a 3D Surface Profiler. It is demonstrated that regular and compact patterned films of Cu₂S crystallites had been deposited onto the n-type TiO₂ surface, with sharp edges demarcating the boundaries between the patterned Cu₂S region and the TiO₂ film region. The UV-vis spectra for three Cu₂S/TiO₂ films exhibit a wide absorption between 300 nm and 450 nm. The maximum wavelength differences in the spectra of Cu₂S/TiO₂ films and TiO₂ film were attributed to the added absorption of Cu₂S films at 302 nm and the unchanged adsorption of TiO₂ films. The absorption intensities of the Cu₂S/TiO₂ films could be varied in the UV-vis range using the Cu₂S patterned features (positive, negative).     

高活性氧化亚铜薄膜材料的绿色合成研究

本文采用一步脉冲雾化化学气相沉积法在250℃下制备了氧化亚铜薄膜催化剂.实验研究了前驱体中掺杂水对氧化铜薄膜表面形貌、拓扑结构、表面成分和光学特性的影响规律.结果表明所制得的催化剂为纯相的氧化亚铜.前驱体溶液中掺杂水会导致氧化亚铜的晶粒变小,从而使得共光学能隙从2.16 eV降至2.04 eV.原子力显微镜结果表明随着水的加入,氧化亚铜的表面粗糙度降低,表面更加均匀.此外,利用密度泛函理论计算得到了水和乙醇在氧化亚铜薄膜表面的吸附和反应特性,并提出了氧化亚铜的形成机理.本文开发了一种低成本且实际可行的薄膜制造方法,该方法在太阳能电池和半导体等领域具有潜在应用.     

化学溶液法制备的Pb(Mg1/3Nb2/3)O3-PbTiO3薄膜的光学性能

用化学溶液方法在宝石衬底及有LaNiO₃缓冲层的Pt/TiO₂/SiO₂/Si衬底上制备了92%Pb(Mg_1/3Nb_2/3)O₃-8%PbTiO₃(PMNT)薄膜，X射线衍射测试结果表明：在有LaNiO₃缓冲层的Pt/TiO₂/SiO₂/Si衬底上制备的PMNT薄膜几乎是纯钙钛矿相，且薄膜 关键词： PMNT薄膜 光学性能 化学溶液法     

Room-temperature ferromagnetism of the amorphous Cu-doped ZnO thin films

Amorphous copper-doped ZnO thin films (ZnO:Cu) prepared on glass substrates by the radio-frequency magnetron co-sputtering have been investigated. Magnetic measurements indicated that the amorphous ZnO:Cu thin films were ferromagnetic at room temperature and the saturation magnetization was much higher than that of the polycrystalline films. X-ray diffraction results showed there was no Cu₂O phase in amorphous ZnO:Cu films, which might be the reason for the high magnetic moment of the films. On the other hand, the high saturation magnetization of the amorphous ZnO:Cu films could also attribute to that there was no limit of solid solubility of Cu in amorphous ZnO solvent. The X-ray photoelectron spectroscopy study of the amorphous ZnO:Cu thin films reveal that copper was in Cu²⁺ chemical state.     

Multistep deposition of Cu2Si(S,Se)3 and Cu2ZnSiSe4high band gap absorber materials for thin film solar cells

Cu₂ZnSi(S,Se)₄ and Cu₂Si(S,Se)₃ are potential materials to obtain cost effective high band gap absorbers for tandem thin film solar cell devices. A method to synthesize Cu₂SiS₃, Cu₂SiSe₃and Cu₂ZnSiSe₄thin film absorbers is proposed. This method is based on a multistep process, using sequential deposition and annealing processes. X‐ray diffraction analysis performed on the final thin films have confirmed the presence of the Cu₂Si(S,Se)₃ and Cu₂ZnSiSe₄phases. Scanning electron microscopy images revealed the formation of polycrystalline layers with grains size up to 1 µm. The band gap of the ternary Cu₂SiSe₃ and Cu₂SiS₃, and quaternary Cu₂ZnSiSe₄ based thin films as determined from optical and photoluminescence measurements are found to be close to their theoretical values. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)