氧化锌有序结构在Au(111)和Cu(111)上的生长

利用NO₂或O₂作为氧化剂,研究了氧化锌在Au(111)和Cu(111)上的生长和结构。NO₂表现了更好的氧化性能,有利于有序氧化锌纳米结构或薄膜的生长。在Au(111)和Cu(111)这两个表面上,化学计量比氧化锌都形成非极性的平面化ZnO(0001)的表面结构。在Au(111)上,NO₂气氛下室温沉积锌倾向于形成双层氧化锌纳米结构;而在更高的沉积温度下,在NO₂气氛中沉积锌则可同时观测到单层和双层氧化锌纳米结构。O₂作为氧化剂时可导致形成亚化学计量比的ZnO_x结构。由于铜和锌之间的强相互作用会促进锌的体相扩散,并且铜表面可以被氧化形成表面氧化物,整层氧化锌在Cu(111)上的生长相当困难。我们通过使用NO₂作为氧化剂解决了这个问题,生长出了覆盖Cu(111)表面的满层有序氧化锌薄膜。这些有序氧化锌薄膜表面显示出莫尔条纹,表明存在一个ZnO和Cu(111)之间的莫尔超晶格。实验上观察到的超晶格结构与最近理论计算提出的Cu(111)上的氧化锌薄膜结构相符,具有最小应力。我们的研究表明,氧化锌薄膜的表界面结构可能会随氧化程度或氧化剂的不同而变化,而Cu(111)的表面氧化也可能影响氧化锌的生长。当Cu(111)表面被预氧化成铜表面氧化物时,ZnO_x的生长模式会发生变化,锌原子会受到铜氧化物晶格的限域形成单位点锌。我们的研究表明了氧化锌的生长需要抑制锌向金属基底的扩散,并阻止亚化学计量比ZnO_x的形成。因此,使用原子氧源有利于在Au(111)和Cu(111)表面上生长有序氧化锌薄膜。     

Si掺杂TiO2催化剂的结构与可见光催化活性研究

采用溶胶-凝胶法制备出Si⁴⁺离子掺杂的TiO₂可见光催化剂 (TiO₂-xSi),该催化剂的可见光催化活性高于纯TiO₂和N掺杂的TiO₂(TiO₂-N).利用XRD、XPS、FT-IR和UV-Vis DRS等表征技术,研究了TiO₂-xSi催化剂的晶体结构、能带结构和表面性质.研究发现:掺入Si⁴⁺离子在TiO₂粒子表面主要形成Ti-O-Si结构,并在导带下0.2-0.6 eV区域形成表面态能级,该表面态能级的存在是催化剂产生可见光响应、实现可见光催化的根本原因.另外,讨论了Si⁴⁺离子的掺杂对金红石相和晶粒的生长抑制作用,以及催化剂的比表面积和表面羟基物种增加对可见光催化活性的影响.     

Pr3+掺杂的TiO2纳米粉体的表面特性和光催化活性

利用酸催化的溶胶-凝胶法制备了纯的和不同Pr³⁺掺杂量的TiO₂纳米粉体.以亚甲基蓝(MB)溶液的光催化降解为探针反应,评价了它们的光催化活性.利用XRD和BET技术研究了Pr³⁺掺杂量和焙烧温度对TiO₂纳米粉体的相结构、晶粒尺寸和表面织构特性的影响,并用XPS和SPS技术研究了Pr³⁺掺杂的TiO₂纳米粉体的表面组成和表面光伏特性,探讨了Pr³⁺掺杂提高纳米TiO₂的光催化活性的机制.结果表明:适量Pr³⁺掺杂能显著提高纳米TiO₂的光催化活性.当Pr³⁺掺杂量为1.25%(以Pr³⁺/TiO₂质量比计),焙烧温度为600℃时,制得粉体的光催化活性最佳.Pr³⁺掺杂强烈地抑制TiO₂由锐钛矿相向金红石相的转变,减小晶粒尺寸,增大比表面积,增加表面羟基和吸附氧的含量,提高光生电子和空穴的分离效率,改善粉体表面的光吸收性能,上述因素均有利于光催化活性的提高.     

SnO2掺杂对TiO2/Si纳米复合材料性能的影响

采用溶胶-凝胶法在p-型单晶硅的表面镀上一层TiO2-SnO2纳米复合薄膜,并在一定的温度下煅烧得到TiO2-SnO2/Si复合材料.实验研究发现,在TiO2中掺杂一定量的SnO2会使TiO2/Si复合材料的光电压增强,且SnO2的掺杂会抑制TiO2的晶相转变,使复合材料的高温稳定性增强.另外,SnO2的掺杂量和煅烧温度对复合材料的光电压都有影响.当SnO2掺杂量约为20%,煅烧温度为600℃时复合材料的光电压最强.     

改性SCR催化剂对Hg0催化氧化性能的研究

采用一系列金属氧化物对商用SCR催化剂进行掺杂改性,筛选出最优Ce掺杂SCR催化剂,模拟实际烟气组分,考察了Ce改性催化剂对烟气中Hg⁰氧化的影响。实验结果表明,Ce掺杂比例适当可显著提高其催化活性,Ce最佳负载量为9%时,Hg⁰的催化氧化效率比未掺杂SCR催化剂提高近40%,BET和XRD也显示,CeO₂在催化剂表面分散程度较好,未出现聚集现象。烟气工况对Hg⁰的催化氧化具有重要影响,其中,烟气组分HCl显著促进了Ce改性催化剂对Hg⁰的氧化,在一定温度范围内,Hg⁰的氧化效率随着温度升高而增加,在最佳空速、温度和烟气组分浓度时,Hg⁰的催化氧化效率可达95.11%。此外,掺杂CeO₂之后SCR催化剂的脱硝性能并未受到影响。     

硒化铜/硒化锌复合物的制备及性能表征

<正>硒化物半导体具有可控的形貌和相结构，在热电、激光、光学滤波器、太阳能电池和传感器等领域有着广泛应用。1996年，美国劳伦斯利弗莫尔国家实验室的研究人员首次提出并验证了过渡金属元素表面掺杂Ⅱ-Ⅵ族半导体晶体作为中红外激光增益介质的可能性。经过表面修饰的Ⅱ-Ⅵ族半导体材料具有优异的中红外光学性能，已经投入工业生产^[1]。2000年，铜掺杂硒化锌(Cu:ZnSe)半导体纳米晶体被首次报道(量子产率2%～4%)^[2]。2005年，彭笑刚团队^[3]将掺杂方法分为生长掺杂和成核掺杂两种，并采用生长掺杂法制备了高质量的Cu:ZnSe量子点(量子产率10%～30%)，该量子点会发出明亮的翠绿色光。然而，上述材料的合成路线对环境有害，在生物医药领域并不适用。2006年，中国科学院某实验室采用宽带隙的ZnSe修饰硒化镉(CdSe)纳米粒子，可以有效地去除CdSe表面缺陷^[4]。     

TiO2掺杂用于调变α-Al2O3中空纤维膜烧结性能与表面性质

利用相转化?高温烧结技术制备α?Al₂O₃中空纤维膜,系统研究了TiO₂掺杂调变中空纤维膜的烧结性能与表面性质。结果表明,TiO₂与α?Al₂O₃之间的固相反应能够促进中空纤维的烧结,当TiO₂掺杂量(物质的量分数)为1%~2%时,其烧结温度可以降到1400℃,且机械强度保持不变;TiO₂掺杂增加了中空纤维表面的羟基活性位点浓度,从而有利于CHA分子筛膜的生长;使用物质的量分数1%~3%TiO₂掺杂的α?Al₂O₃中空纤维制备出高质量CHA分子筛膜,其用于乙醇/水(9∶1,w/w)溶液渗透汽化脱水时的分离因子均超过10000。     

Ca掺杂的CeO2模型催化剂的形貌和电子结构及其与CO2分子的相互作用

利用扫描隧道显微镜、X射线光电子能谱和同步辐射光电子能谱研究了CeO₂(111),部分还原的CeO_2-x(111) (0＜x＜0.5)以及Ca掺杂的CeO₂模型催化剂的形貌、电子结构以及它们与CO₂分子间的相互作用。CeO₂(111)和部分还原的CeO_2-x(111)薄膜外延生长于Cu(111)单晶表面。不同Ca掺杂的CeO₂薄膜是通过在CeO₂(111)薄膜表面室温物理沉积金属Ca及随后真空退火到不同温度而得到的。不同的制备过程导致样品具有不同的表面组成,化学态和结构。CO₂吸附到CeO₂和部分还原的CeO_2-x表面后导致表面羧酸盐的形成。此外,相比于CeO₂表面,羧酸盐物种更易在部分还原的CeO_2-x表面生成,而且更加稳定。而在Ca掺杂的氧化铈薄膜表面,Ca²⁺离子的存在有利于CO₂的吸附,且探测到碳酸盐物种的形成。     

钽掺杂六方相氧化钨对Sr2+的吸附:Zeta电位的测量及吸附机理的研究

研究Ta掺杂六方相氧化钨(hex-WO₃)材料在吸附Sr²⁺过程中其表面zeta电位的变化情况,并进一步探讨了吸附过程的热力学及吸附机理。结果表明：(1)在实验pH值范围内,Ta掺杂hex-WO₃悬浮液的zeta电位值随溶液中电解质的价态增大而增大;(2)且zeta电位随体系中离子强度的增加而增大;(3) Ta掺杂hex-WO₃对Sr²⁺的吸附容量随着温度降低而增大,随着离子强度的增加而减少;(4)吸附过程的吸附焓为－47 kJ·mol^-1,且Sr²⁺离子与材料表面之间主要为化学相互作用;(5) Ta掺杂hex-WO₃对Sr²⁺吸附过程主要为材料表面吸附及材料孔道内离子交换共同作用。     

锌掺杂对SrTiO_3光催化性能的影响

制备了锌掺杂的SrTiO3光催化剂,测试了掺杂样品在400 W高压汞灯照射下,分解纯水制氢的活性。考察了锌的掺杂量及样品的焙烧温度对其光催化活性的影响,并对掺锌与未掺杂样品进行了XRD、UV-vis、XPS及SEM表征分析。结果表明,Zn掺入可显著提高SrTiO3的光催化活性,适宜的锌掺杂摩尔分数为1%左右,相应的掺杂量下,适宜的焙烧温度为950℃左右,上述条件制得掺锌SrTiO3的产氢速率较未掺杂样品提高了120%左右。表征结果显示,掺摩尔分数1%的锌未改变SrTiO3的晶体结构及结晶完整性,但样品表面发生了锌的富集,而且在一定的掺杂范围内,锌掺杂使SrTiO3催化剂的粒度有所增大。推测掺入的Zn与存在于SrTiO3表面的富钛相反应生成Zn2TiO4,使SrTiO3表面的缺陷浓度降低,光催化活性提高。     

Preparation of epitaxial La0.6Ca0.4Mn1−xFexO3 (x = 0, 0.2) thin films: Variation of the oxygen content

Perovskite thin films with a nominal composition of La_0.6Ca_0.4Mn_1−xFe_xO₃ (x = 0, 0.2) were deposited by pulsed reactive crossed beam laser ablation. The film properties, such as electrical conductivity and magnetoresistance are studied as a function of the oxygen content and substrate type. The oxygen content of the thin films was determined by Rutherford Backscattering and controlled by varying the background gas pressure, pressure of the gas pulse and by using alternatively O₂ and N₂O as the gas pulse.

LaAlO₃ and SrTiO₃ were used as substrates at deposition temperature of 650 °C. The grown films were analyzed by X-ray diffraction in order to optimize the growth conditions, i.e. to obtain epitaxial thin films. Thin films doped with 20% Fe were grown under the same experimental conditions as the undoped LCMO films and the effect of the doping on the structural and transport properties of the thin films has been investigated.

The temperature of the metal–insulator transition was measured as a function of the oxygen content and substrate type.     

Study of in-situ surface cleaning for Si and SiGe epitaxy on Si with a novel ion beam vapor/assisted deposition technique

Ion beam vapor deposition is a new technique to grow Si and SiGe layers on Si substrates at low temperatures. The in situ surface cleaning prior to the deposition is a crucial step in the epitaxial growth of Si and SiGe films and is achieved by Ar ion bombardment with substrates kept at ambient temperature. A high temperature annealing (800 °C) is needed to repair the damage caused by this bombardment. We studied the effects of ion beam energy and the substrate temperature during the in situ cleaning on the quality of the grown films. An ion beam energy of 150–200eV is found to be sufficient to clean the surface for epitaxial growth. While the films deposited on properly cleaned surfaces are epitaxially grown, the inadequately cleaned surface leads to the formation of polycrystalline layers especially at low substrate temperatures.     

Unintentional doping in GaN

The optimisation of GaN-based electronic and optoelectronic devices requires control over the doping of the material. However, device performance, particular for lateral transport electronic devices, is degraded by the presence of unintentional doping, which for heteroepitaxial GaN layers grown in the polar (0001) orientation is mainly confined to a layer adjacent to the GaN/substrate interface. The use of scanning capacitance microscopy (SCM) has demonstrated that this layer forms due to the high rate of incorporation of gas phase impurities, primarily oxygen, during the early stages of growth, when N-rich semi-polar facets are often present. The presence of such facets leads to additional unintentional doping when defect density reduction strategies involving a three-dimensional growth phase (such as epitaxial lateral overgrowth) are employed. Many semi-polar epitaxial layers, on the other hand, exhibit significant unintentional doping throughout their thickness, except when a three-dimensional growth phase is introduced to aid in defect density reduction resulting in the presence of (0001) and non-polar facets which incorporate less dopant. Non-polar epitaxial samples exhibit behaviour more similar to (0001)-oriented material, but oxygen diffusion from the sapphire substrate along prismatic stacking faults also locally affects the extent of the unintentional doping in this case.     

Temperature dependent in situ doping of ALD ZnO

This study on ALD grown ZnO layers is aimed at the systematic study of the effect of incorporation of different Al contents on the properties of the layers. An alternate precursor pulse method was used for layer deposition. Optimal doping was achieved at 210 °C at 2 at% Al content. A relationship between crystalline morphology versus temperature and aluminium incorporation was established.     

冠醚化合物对乳剂晶体外延生长的调变作用

本工作研究了冠醚化合物在外延乳剂生长过程中的调变作用。结果表明,1,4,7,10,13,16-六氧杂环十八烷对AgBr八面体乳剂无侵蚀作用,对非同晶系晶体之间的外延不起调变作用。1,7,10,16-四氟-4,13-二氮代杂环十八烷均使AgBr八面体乳剂的棱角产生了不同程度的侵蚀,可充当不同晶系晶体外延生长的调变剂,对晶体的溶解侵蚀能力依2S-18-C-6,2N-18-C-6,18-C-6的次序降低。这与它们同Ag⁺络合能力的强弱一致。2S-18-C-6,2N-18-C-6仅对非同晶系晶体之间的外延起调度作用,而对同晶系晶体的外延不起调查作用。冠醚化合物对晶体外延生长的调变作用与冠醚化合物对晶体的络合溶解作用有关。     

基于p-6P异质诱导生长酞菁铜薄膜的NO2传感器

为实现室温下低浓度NO₂气体检测,制作了p-六联苯(p-6P)诱导层的酞菁铜有机薄膜传感器。利用原子力显微镜(AFM)研究了不同沉积速率下p-6P薄膜的生长规律,慢速沉积提供足够的分子扩散时间,利于薄膜横向生长,形成高度低、尺寸大的晶畴。在p-6P薄膜上生长了酞菁铜薄膜,可以清晰看到晶畴上酞菁铜薄膜的有序排列。利用X射线衍射(XRD)仪,阐明了p-6P对酞菁铜薄膜具有很好的诱导效应。通过对比不同沉积速率p-6P薄膜诱导的酞菁铜传感器性能,发现慢速沉积诱导层的酞菁铜器件有高的响应强度和低的回复时间。异质诱导生长的酞菁铜传感器响应强度是直接生长在二氧化硅上的酞菁铜传感器的2倍,回复时间是3.2 min,对浓度为1.0 × 10^-5的NO₂气体灵敏。     

Radiation resistance of GaAs–AlGaAs heterostructures doped with isovalent and rare-earth elements

When GaAs–Si and GaAs–AlGaAs heterostructures are exposed to γ-quanta, radiation stimulated ordering is observed. However, the gettering efficiency in such systems falls for layer widths more than 1 μm. For this reason we seek effective methods of radiation resistance improvement of materials in which one would expect point radiation defects to be gettered not only at defect boundaries, but also in the active layer volume.

S.i.GaAs–s.i.Al_xGa_1−xAs–nGaAs : Te heterostructures are presented with epitaxial layers (doped with Yb or undoped), obtained by means of LPE (liquid-phase epitaxy). The electron concentration in nGaAs was found to be (1–3)×10¹⁸ cm⁻³ for widths 1–3 μm. The samples were exposed to ⁶⁰Co γ-quanta with doses of 10⁵–10⁷ rad.

Investigations of irradiated samples by means of low-temperature (4.2 K) photoluminescence have shown considerable decrease of exciton halfwidth in the boundary spectra of nGaAs : Te : Yb epitaxial layers in comparison with nGaAs : Te layer spectra. This is caused by background impurity gettering which happens on the s.i.Al_xGa_1−xAs–nGaAs heteroboundaries as well as in deformed regions in the epitaxial layer volume. Formation of such regions is caused by the difference between the covalent radii of Yb atoms and GaAs lattice atoms. The maximum effect of radiation stimulated gettering of dopants in nGaAs epitaxial layers is observed for Yb concentrations which are equal to 10⁻⁴–10⁻⁵ atomic fractions in a solution-melt.

It is determined that the deformed regions in epitaxial layer volumes and heteroboundaries could be efficient drains for point radiation defects which form under radiation exposure. The investigations carried out showed that the doping of an epitaxial layers by rare-earth impurities provides considerable improvement in forming radiation resistant III–V materials.     

Platinum additive impacts on vapor-liquid-solid growth chemical interface for high-quality SiC single crystal films

Pt additive to Si-based flux in the vapor-liquid-solid (VLS) process for 4H–SiC epitaxial films has been successful in suppressing the step bunching as well as in promoting the step-flow growth mode at growth temperatures much lower than 2000 °C, as evidenced by in situ laser microscope observation of a model solution growth chemical interface. As a result, the SiC film surface became remarkably flat, exhibiting well-regulated step-and-terrace structures with narrow terrace widths and straight step lines; the polytype of 4H–SiC was much more stabilized in the grown SiC films even at a growth temperature of 1250 °C. Furthermore, there is little concern about incorporation of Pt atoms as an impurity into the grown SiC films so that their Schottky junction properties are almost as excellent as those of 4H–SiC single crystals.     

通过磁控溅射金属钛生长金红石型二氧化钛纳米片阵列应用于钙钛矿太阳能电池

本文首次通过磁控溅射方法,在FTO表面溅射一层Ti金属层,结合水热反应,原位生长TiO₂纳米片阵列（TiO₂ NSAs）. 经过退火处理,Ti金属层转变为致密的TiO₂层,因此基于此方法制得的金红石型TiO₂ NSAs与FTO基底具有很强的结合力. 与通过原子层沉积 (ALD) 以及悬涂 (SC) 法所得的另外两种TiO₂致密层生长的TiO₂ NSAs对比发现,基于本文所述方法制备的TiO₂ NSAs作为支架层的钙钛矿太阳能电池具有最佳性能. 上述结果主要是由于该TiO₂ NSAs无明显缺陷,并且在TiO₂ NSAs/TiO₂致密层/FTO界面接触很好. 值得注意的是,通过优化实验条件,基于此种TiO₂ NSAs的钙钛矿太阳能电池的最高光电转换效率可达11.82%.     

Fabrication and electron transport properties of epitaxial films of electron-doped 12CaO·7Al2O3 and 12SrO·7Al2O3

Epitaxial growth and electron doping of 12CaO·7Al₂O₃ (C12A7) and 12SrO·7Al₂O₃ (S12A7) are reported. The C12A7 films were prepared on Y₃Al₅O₁₂ (YAG) single-crystal substrates by pulsed laser deposition at room temperature and subsequent thermal crystallization. X-ray diffraction patterns revealed the films were grown epitaxially with the orientation relationship of (001)[100] C12A7 || (001)[100] YAG. For S12A7, pseudo-homoepitaxial growth was attained on the C12A7 epitaxial layer. Upon electron doping, metallic conduction was achieved in the C12A7 film and the S12A7/C12A7 double-layered films. Analyses of optical absorption spectra for the S12A7/C12A7 films provided the densities of free electrons in each layer separately. Hall measurements exhibited larger electron mobility in the S12A7/C12A7 film than those in C12A7 and S12A7 films, suggesting free electrons may be accumulated at the S12A7/C12A7 interface due presumably to a discontinuity of the cage conduction bands.