Synthesis of β-Ga2O3 nanowires through microwave plasma chemical vapor deposition

In this study, we demonstrate the large-scale synthesis of beta gallium oxide (β-Ga₂O₃) nanowires through microwave plasma chemical vapor deposition (MPCVD) of a Ga droplet in the H₂O and Ar atmosphere at 600 W. Unlike the commonly used MPCVD method, the H₂O, not mixture of gas, was employed to synthesize the nanowires. The ultra-long β-Ga₂O₃ nanowires with diameters of about 20-30 nm were several tens of micrometers long. The morphology and structure of products were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution transmission electron microscope (HRTEM). The growth of β-Ga₂O₃ nanowires was controlled by vapor-solid (VS) crystal growth mechanism.     

Sonochemical synthesis of supersaturated Ga–Al liquid-alloy fine particles and Al3+-doped γ-Ga2O3 nanoparticles by direct oxidation at near room temperature

In this study, we investigated the fabrication of supersaturated gallium (Ga)–aluminum (Al) liquid alloy and Al³⁺-doped γ-Ga₂O₃ nanoparticles (NPs) at near room temperature (60 °C) using sonochemical and sonophysical effects. Supersaturated Ga–Al liquid alloy microparticles (D_av = 1.72 µm) were formed and stabilized at 60 °C by the thermal nonequilibrium field provided by sonochemical hot spots. Compared with liquid Ga, supersaturated Ga–Al liquid alloy was rapidly oxidized to a uniform oxide without Al₂O₃ or Al deposition. Thus, ultrafine Al³⁺-doped γ-Ga₂O₃ NPs were obtained after only 1 h of ultrasonic irradiation at 60 °C. The oxidation of liquid Ga was remarkably accelerated by alloying with metallic Al and ultrasonic irradiation, and the time was shortened. The average diameter and surface area of the γ-Ga₂O₃-based NPs were 59 nm and 181 m²/g, respectively. Compared with γ-Ga₂O₃, the optical bandgap of the Al³⁺-doped γ-Ga₂O₃ NPs was broadened, and the thermal stability improved, indicating Al³⁺-doping into the γ-Ga₂O₃ lattice. However, the lattice constant of γ-Ga₂O₃ was almost unchanged with or without Al³⁺-doping. Al³⁺ was introduced into the defect sites of Ga³⁺, which were massively induced in the defective spinel structure during ultrasonic processing. Therefore, sonochemical processing, which provides nonequilibrium reaction fields, is suitable for the synthesis of supersaturated and metastable materials in metals and ceramics fields.     

Novel nanostructures of β-Ga2O3 synthesized by thermal evaporation

In this study, we report the novel β-Ga₂O₃ nanostructures synthesized by the thermal evaporation of Ga droplet in the presence of Au catalysts at 900 °C. The morphology and structure of the products were analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). The single-crystalline β-Ga₂O₃ nanosheets have lateral dimensions up to several tens of microns. Large arrays of column-like layered crystal β-Ga₂O₃ structures that consisted of many nanosheets were formed on the Au-coated silicon substrate under the suitable vapor concentration. These novel β-Ga₂O₃ nanostructures are expected to have potential application in functional nanodevices.     

Zn掺杂β-Ga2O3薄膜的制备和特性研究

β-Ga₂O₃是一种宽带隙半导体材料,能带宽度E_g≈5.0eV,在光学和光电子学领域有广泛的应用。用射频磁控溅射方法在Si衬底和远紫外光学石英玻璃衬底制备了本征β-Ga₂O₃薄膜及Zn掺杂β-Ga₂O₃薄膜,用紫外 可见分光光度计、X射线衍射仪、荧光分光光度计对本征β-Ga₂O₃薄膜及Zn掺杂β-Ga₂O₃薄膜的光学透过、光学吸收、结构和光致发光进行了测量,研究了Zn掺杂和热退火对薄膜结构和光学性质的影响。退火后的β-Ga₂O₃薄膜为多晶结构,与本征β-Ga₂O₃薄膜相比,Zn掺杂β-Ga₂O₃薄膜的β-Ga₂O₃(111)衍射峰强度变小,结晶性变差,衍射峰位从35.69°减小至35.66°。退火后的Zn掺杂β-Ga₂O₃薄膜的光学带隙变窄,光学透过降低,光学吸收增强,出现了近边吸收,薄膜的紫外、蓝光及绿光发射增强。表明退火后Zn掺杂β-Ga₂O₃薄膜中的Zn原子被激活充当受主。     

Fabrication and characteristics of N-doped β-Ga2O3 nanowires

Undoped and N-doped  β-Ga₂O₃ nanowires (NWs), using NH₃ as the dopant source, were successfully fabricated by the CVD method on Si substrates. The microstructure, morphology, element composition and carrier concentration of the samples were characterized by XRD, SEM, TEM, and EDX. The results revealed that well-aligned undoped NWs were perpendicular to the substrates. Comparing with undoped β-Ga₂O₃ NWs, the morphology of N-doped β-Ga₂O₃ NWs showed a significant change and they were randomly oriented relative to the substrates. As the NH₃ flow was increased, the microstructure of the sample presented a lot of branched-like and trumpet-shaped structures. Simultaneously, a rougher surface has been attained. PL spectrum measurements showed that N-doped β-Ga₂O₃ NWs had ultraviolet (UV), blue and green emission peaks because of the N-doped process. Furthermore, micro-scale undoped β-Ga₂O₃/N-doped β-Ga₂O₃ homojunction structures were fabricated. The I–V property of the fabricated N-doped β-Ga₂O₃ microwire and β-Ga₂O₃/N-doped β-Ga₂O₃ microwire homojunction were compared. I–V results testified that N-doped β-Ga₂O₃ NWs showed p-type conductivity.     

Synthesis and characterization of β-Ga2O3 nanostructures grown on GaAs substrates

β-Ga₂O₃ nanostructures including nanowires, nanoribbons and nanosheets were synthesized via thermal annealing of gold coated GaAs substrates in N₂ ambient. GaAs substrates with different dopants were taken as the starting material to study the effect of doping on the growth and photoluminescence properties of β-Ga₂O₃ nanostructures. The nanostructures were investigated by Grazing Incident X-ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy, Energy Dispersive X-ray Spectroscopy, room temperature photoluminescence and optical absorbance. The selected area electron diffraction and High resolution-TEM observations suggest that both nanowires and nanobelts are single crystalline. Different growth directions were observed for nanowires and nanoribbons, indicating the different growth patterns of these nanostructures. The PL spectra of β-Ga₂O₃ nanostructures exhibit a strong UV-blue emission band centered at 410 nm, 415 nm and 450 nm for differently doped GaAs substrates respectively. A weak red luminescence peak at 710 nm was also observed in all the samples. The optical absorbance spectrum showed intense absorption features in the UV spectral region. The growth and luminescence mechanism in β-Ga₂O₃ nanostructures are also discussed.     

Combined synthesis and in situ coating of nanoparticles in the gas phase

Ga₂O₃ was-synthesized by doping a premixed H₂/O₂/Ar flat flame with diluted trimethyl gallium Ga(CH₃)₃ in a low-pressure reactor. The mean particle diameter d _p of the resulting metal oxide was characterized in-situ with a particle mass spectrometer (PMS), and was observed to range between 2.5 nm ≤ d _p ≤ 6.5 nm. XRD results show that the as-synthesized Ga₂O₃ nanoparticles are mostly amorphous, although, a few broad reflexes were observed that indicate the presence of some degree of crystallinity. Thermal annealing of the as-synthesized material at 1000 °C for 5 min yielded β-Ga₂O₃ with a monoclinic structure. UV–VIS measurements indicate strong absorption in the UV range (4.8 eV), which corresponds quite well to the direct band gap of bulk Ga₂O₃. Photoluminescence (PL) measurements of the as-synthesized metal oxide show a broad emission ranging from 350 nm to 600 nm with a maximum at 460 nm. Crystalline β-Ga₂O₃ exhibited stronger luminescence than as-synthesized particles.     

Catalytic growth and characterization of Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> nanowires

β-Ga₂O₃ nanowires have been synthesized using Ga metal and H₂O vapor at 800 °C in the presence of Ni catalyst on the substrate. Remarkable reduction of the diameter and increase of the length of the Ga₂O₃ nanowires are achieved by separation of Ga metal and H₂O vapor before they reach the substrate. Transmission electron microscopy analyses indicate that the β-Ga₂O₃ nanowires possess a single-crystalline structure. Photoluminescence measurements show two broad emission bands centered at 290 nm and 390 nm at room temperature. Received: 27 June 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +886-6/234-4496, E-mail: wujj@mail.ncku.edu.tw     

Growth of thin, crystalline oxide, nitride, and oxynitride films on NiAl and CoGa surfaces

At 300 K, an amorphous Al-oxide film is formed on NiAl(001) upon oxygen adsorption. Annealing of the oxygen-saturated NiAl(001) surface to 1200 K leads to the formation of thin well-ordered θ-Al₂O₃ films. At 300 K, and low-exposure oxygen atoms are chemisorbed on CoGa(001) on defects and on step edges of the terraces. For higher exposure up to saturation, the adsorption of oxygen leads to the formation of an amorphous Ga-oxide film. The EEL spectrum of the amorphous film exhibits two losses at ≈400 and 690 cm^-1. After annealing the amorphous Ga-oxide films to 550 K thin, well-ordered β-Ga₂O₃ films are formed on top of the CoGa(001) surface. The EEL spectrum of the β-Ga₂O₃ films show strong Fuchs-Kliewer (FK) modes at 305, 455, 645, and 785 cm^-1. The β-Ga₂O₃ films are well ordered and show (2×1) LEED pattern with two domains, oriented perpendicular to each other. The STM study confirms the two domains structure and allows the determination of the two-dimensional lattice parameters of β-Ga₂O₃. The vibrational properties and the structure of β-Ga₂O₃ on CoGa(001) and θ-Al₂O₃ on NiAl(001) are very similar. Ammonia adsorption at 80 K on NiAl(111) and NiAl(001) and subsequent thermal decomposition at elevated temperatures leads to the formation of AlN. Well-ordered and homogeneous AlN thin films can be prepared by several cycles of ammonia adsorption and annealing to 1250 K. The films render a distinct LEED pattern with hexagonal [AlN/NiAl(111)] or pseudo-twelve-fold [AlN/NiAl(001)] symmetry. The lattice constant of the grown AlN film is determined to be a_AlN= 3.11 Å. EEL spectra of AlN films show a FK phonon at 865 cm^-1. The electronic gap is determined to be E_g= 6.1±0.2 eV. GaN films are prepared by using the same procedure on the (001) and (111) surfaces of CoGa. The films are characterized by a FK phonon at 695 cm^-1 and an electronic band gap E_g= 3.5±0.2 eV. NO adsorption at 75 K on NiAl(001) and subsequent annealing to 1200 K leads to the formation of aluminium oxynitride (AlON). An oxygen to nitrogen atomic ratio of ≈2:1 was estimated from the analysis of AES spectra. The AlON films shows a distinct (2×1) LEED pattern and the EEL spectrum exhibits characteristic Fuchs-Kliewer modes. The energy gap is determined to be E_g= 6.6±0.2 eV. The structure of the AlON film is derived from that of θ-Al₂O₃ formed on NiAl(001). Received: 21 March 1997/Accepted: 12 August 1997     

Synthesis of beta-gallium oxide nanobelts through microwave plasma chemical vapor deposition

Beta-gallium oxide (β-Ga₂O₃) nanobelts were synthesized through microwave plasma chemical vapor deposition (MPCVD) of liquid-phase gallium containing H₂O in Ar atmosphere using silicon as the substrate. Unlike the common microwave plasma method, the H₂O, not mixture of the gas, was employed to synthesize the nanostructures. β-Ga₂O₃ nanobelts prepared by MPCVD have not been reported. The thickness of β-Ga₂O₃ nonobelts was 20–30 nm and length of them was tens to hundreds of microns. The morphology and structure of the products were analyzed by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and X-ray diffraction (XRD). Possible growth mechanisms of the β-Ga₂O₃ nanobelts are briefly discussed.     

Multinuclear MAS NMR Investigation of Sol-Gel and Ball-Milled Nanocrystalline Ga<Subscript>2</Subscript>O<Subscript>3</Subscript>

⁷¹Ga magic-angle spinning (MAS) nuclear magnetic resonance (NMR) has been used to characterize the structural evolution of nanocrystalline Ga₂O₃ samples prepared by sol-gel and ball-milling techniques. ²⁹Si and ²⁷Al MAS NMR have also been used to characterize silica and alumina Zener pinning phases. ⁷¹Ga NMR parameters are reported for the α- and β-Ga₂O₃ phases, and more tentatively for the δ-Ga₂O₃ phase. By simulating the octahedrally coordinated gallium NMR line of β-Ga₂O₃ using Gaussian distributions in χ_Q, the extent of disorder in the Ga₂O₃ crystallites has been quantified. The ball-milled samples contain much more inherent disorder than the sol-gel samples in the nano-phase, which was observed from simulations of the ⁷¹Ga MAS NMR spectra. The silica pinning phase produced highly crystalline and densely aggregated nanocrystalline Ga₂O₃, as well as the smallest nanocrystal sizes. Authors' address: Mark E. Smith, Department of Physics, University of Warwick, Coventry CV4 7AL, UK     

In situ characterization of MBE grown GaAs and Al x Ga1−x As films using RHEED,SIMS, and AES techniques

A combination of the surface diagnostic techniques Auger electron spectroscopy (AES), reflection high energy electron diffraction (RHEED), and secondary ion mass spectroscopy (SIMS) was used in order to get more detailed information on basic processes which lead to the formation of high quality monocrystalline GaAs and Al _x Ga_1−x As films by molecular beam epitaxy (MBE) under ultra-high vacuum conditions. The formation and changes of reconstructed surface structures on (100) GaAs as a function of growth parameters were observedduring growth by RHEED. AES was used to determine the relative ratio of Ga/As on the surface for different reconstructed structures, to investigate the impurity contamination on substrate surfaces and grown films, and to study the surface segregation of Sn in MBE GaAs during doping. Finally, intentional and unintentional impurities incorporated during the growth of GaAs and Al _x Ga_1−x As by MBE were detected by the SIMS technique immediately after growth within the reaction chamber.     

Synthesis of <Emphasis Type="Italic">β</Emphasis>-Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> nanowires as a broadband emitter

High-density monoclinic β-Ga₂O₃ nanowires were synthesized by a vapor transport method with controlled ambient oxygen. The structures and morphology were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HR-TEM). X-ray diffraction and HR-TEM analysis indicate that the as-grown β-Ga₂O₃ nanowires are single crystals with monoclinic structure. Intense four-band emissions covering the range from ultraviolet (UV) to visible were observed in photoluminescence (PL) spectra at room temperature. The main emission bands of deep blue (3.04 eV) to green (2.37 eV) for β-Ga₂O₃ nanowires were adjusted by controlling the partial pressure of oxygen. This work demonstrates a low-cost and facile process for optoelectronics applications.     

XPS analysis of surface chemistry of near surface region of epiready GaAs(1 0 0) surface treated with (NH4)2Sx solution

In this work we analyze the effect of (NH)₂S_x wet treatment on the GaAs(1 0 0) covered with “epiready” oxide layer without any pretreatment in order to check the removal of oxides and carbon-related contamination, and the formation of sulfur species. The sulfidation procedure consisted of epiready sample dipping (at room and 40 °C temperatures) in an ammonium polysulfide solution combined with a UHV flash annealing up to 500 °C.The inspection of the XPS As 2p_3/2 and Ga 2p_3/2 spectra taken at surface sensitive mode revealed: (i) the temperature-dependent reduction of the amount of GaAs oxides and carbon contamination after sulfidation, and almost their complete removal after subsequent annealing, (ii) the creation of sulfur bonds with both Ga and As, with more thermally stable Ga-S bonds, and (iii) the slight reduction in elemental arsenic amount.     

Direct synthesis of beta gallium oxide nanowires, nanobelts, nanosheets and nanograsses by microwave plasma

In this study, beta-gallium oxide (β-Ga₂O₃) nanowires, nanobelts, nanosheets, and nanograsses were synthesized through microwave plasma of liquid phase gallium containing H₂O in Ar atmosphere using silicon as the substrate. The nanowires with diameters of about 20-30 nm were several tens of microns long and the nanobelts with thickness of about 20-30 nm were tens to hundreds of microns long. The morphology and structure of products were analyzed by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and X-ray diffraction (XRD). These results showed that multiple nucleation and growth of β-Ga₂O₃ nanostructures could easily occur directly out of liquid gallium exposed to appropriate H₂O and Ar in the gas phase. The growth process of β-Ga₂O₃ nanostructures may be dominated by VS (vapor-solid) mechanism.     

Growth and characterization of new transparent conductive oxides single crystals β-Ga2O3: Sn

Tin oxide doped β-Ga₂O₃ single crystals are recognized as transparent conductive oxides (TCOs) materials. They have a larger band gap (4.8 eV) than any other TCOs, thus can be transparent in UV region. This property shows that they have the potential to make the optoelectronic device used in even shorter wavelength than usual TCOs. β-Ga₂O₃ single crystals doped with different Sn⁴⁺ concentrations were grown by the floating zone technique. Their optical properties and electrical conductivities were systematically studied. It has been found that their conductivities and optical properties were influenced by the Sn⁴⁺ concentrations and annealing.     

Growth of β-gallium oxide nanostructures by the thermal annealing of compacted gallium nitride powder

Various β-gallium oxide (β-Ga₂O₃) nanostructures such as nanowire, nanobelt, nanosheet, and nanocolumn were synthesized by the thermal annealing of compacted gallium nitride (GaN) powder in flowing nitrogen. We suggest that Ga₂O₃ vapor might be formed by the reaction of oxygen with the gaseous Ga formed by GaN decomposition. The Ga₂O₃ vapor diffuses into voids derived by compacting GaN powder and is supersaturated there, resulting in the growth of Ga₂O₃ nanostructures via the vapor–solid (VS) mechanism. Ga₂O₃ plate-like hillocks and nanostructures were also grown on the surface of a c-plane sapphire placed on the GaN pellet.     

Synthesis and characterization of β-Ga2O3 nanorods

A novel method was applied to prepare β-Ga₂O₃ nanorods. In this method, β-Ga₂O₃ nanorods have been successfully synthesized on Si(1 1 1) substrates through annealing sputtered Ga₂O₃/Mo films under flowing ammonia at 950 °C in a quartz tube. The as-synthesized nanorods are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectroscopy (FTIR). The results show that the nanorod is single-crystalline Ga₂O₃ with monoclinic structure. The β-Ga₂O₃ nanorods are straight and smooth with diameters in the range of 200-300 nm and lengths typically up to several micrometers. The growth process of the β-Ga₂O₃ nanorods is probably dominated by conventional vapor-solid (VS) mechanism.     

Preparation and NO_2-gas sensing property of individual β-Ga_2O_3 nanobelt

Monoclinic gallium oxide (β-Ga_2O_3) nanobelts are synthesized from gallium and oxygen by thermal evaporation in an argon atmosphere and their NO_2 sensing properties are studied at room temperature.Electron microscopy studies show that the nanobelts have breadths ranging from 30 to 50 nm and lengths up to tens of micrometers.Both the x-ray diffraction (XRD) and the selected are electron diffraction (SAED) examinations indicate that β-Ga_2O_3 nanobelts have grown into single crystals.Room temperature NO_2 sensing tests show that the current of individual β-Ga_2O_3 nanobelt decreases quickly,and then gently when the NO_2 concentration increases from low to high.It is caused by the NO_2 molecule chemisorption and desorption processes in the surface of β-Ga_2O_3 nanobelt.     

Methanol decomposition on the β-Ga2O3 (1 0 0) surface: A DFT approach

Density functional theory (DFT) cluster model calculations on methanol reactions on the β-Ga₂O₃ (1 0 0) surface have been realized. β-Ga₂O₃ structure has tetrahedral and octahedral ions and the results of gallia-methanol interaction are different depending on the local surface chemical composition. The surface without oxygen vacancies is very reactive and produces the methanol molecule decomposition. The unsaturated surface oxygen atoms strongly oxidize the methanol molecule. CO₂ and H₂O molecules are produced when methanol reacts with a free oxygen vacancy surface on octahedral gallium sites. On the other hand, H₂CO is found after the reaction of this molecule with a free O vacancy surface on tetrahedral gallium sites. A weak interaction between the remaining CO₂ molecule and the oxide surface was found, being this molecule easy to desorb. Otherwise, H₂CO has a stronger surface bond and it could suffer a later oxidation.